TWI313892B - Low 1c screw dislocation 3 inch silicon carbide wafer - Google Patents

Low 1c screw dislocation 3 inch silicon carbide wafer Download PDF

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Publication number
TWI313892B
TWI313892B TW094134555A TW94134555A TWI313892B TW I313892 B TWI313892 B TW I313892B TW 094134555 A TW094134555 A TW 094134555A TW 94134555 A TW94134555 A TW 94134555A TW I313892 B TWI313892 B TW I313892B
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Taiwan
Prior art keywords
wafer
single crystal
wafers
high quality
corundum
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TW094134555A
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English (en)
Chinese (zh)
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TW200629390A (en
Inventor
Adrian Powell
Mark Brady
Robert T Leonard
Stephan G Mueller
Valeri F Tsvetkov
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Cree Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW094134555A 2004-10-04 2005-10-03 Low 1c screw dislocation 3 inch silicon carbide wafer TWI313892B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/957,806 US7314520B2 (en) 2004-10-04 2004-10-04 Low 1c screw dislocation 3 inch silicon carbide wafer

Publications (2)

Publication Number Publication Date
TW200629390A TW200629390A (en) 2006-08-16
TWI313892B true TWI313892B (en) 2009-08-21

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ID=35925857

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094134555A TWI313892B (en) 2004-10-04 2005-10-03 Low 1c screw dislocation 3 inch silicon carbide wafer

Country Status (7)

Country Link
US (3) US7314520B2 (enExample)
EP (2) EP2584071B1 (enExample)
JP (3) JP2008515748A (enExample)
KR (1) KR20070054719A (enExample)
CN (1) CN101061262B (enExample)
TW (1) TWI313892B (enExample)
WO (1) WO2006041659A2 (enExample)

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US8785946B2 (en) 2014-07-22
US20080169476A1 (en) 2008-07-17
JP5410572B2 (ja) 2014-02-05
EP1797225B1 (en) 2013-03-06
TW200629390A (en) 2006-08-16
JP2008515748A (ja) 2008-05-15
CN101061262B (zh) 2013-06-12
US20130161651A1 (en) 2013-06-27
US7314520B2 (en) 2008-01-01
CN101061262A (zh) 2007-10-24
JP2012214379A (ja) 2012-11-08
EP1797225B2 (en) 2017-10-18
EP1797225A2 (en) 2007-06-20
EP2584071A1 (en) 2013-04-24
WO2006041659A2 (en) 2006-04-20
JP2009035477A (ja) 2009-02-19
US8384090B2 (en) 2013-02-26
KR20070054719A (ko) 2007-05-29
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US20060073707A1 (en) 2006-04-06
EP2584071B1 (en) 2014-10-22

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