KR20070054719A - 낮은 나선 전위 밀도를 가지는 3인치 실리콘 카바이드웨이퍼 - Google Patents

낮은 나선 전위 밀도를 가지는 3인치 실리콘 카바이드웨이퍼 Download PDF

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Publication number
KR20070054719A
KR20070054719A KR1020077007696A KR20077007696A KR20070054719A KR 20070054719 A KR20070054719 A KR 20070054719A KR 1020077007696 A KR1020077007696 A KR 1020077007696A KR 20077007696 A KR20077007696 A KR 20077007696A KR 20070054719 A KR20070054719 A KR 20070054719A
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silicon carbide
wafer
helix
dislocation density
bowl
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Korean (ko)
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아드리안 파월
마크 브래디
슈테판 게오르그 뮐러
발레리 에프. 츠베트코프
로버트 타일러 레오나르드
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크리 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020077007696A 2004-10-04 2005-09-27 낮은 나선 전위 밀도를 가지는 3인치 실리콘 카바이드웨이퍼 Ceased KR20070054719A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/957,806 US7314520B2 (en) 2004-10-04 2004-10-04 Low 1c screw dislocation 3 inch silicon carbide wafer
US10/957,806 2004-10-04

Publications (1)

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KR20070054719A true KR20070054719A (ko) 2007-05-29

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KR1020077007696A Ceased KR20070054719A (ko) 2004-10-04 2005-09-27 낮은 나선 전위 밀도를 가지는 3인치 실리콘 카바이드웨이퍼

Country Status (7)

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US (3) US7314520B2 (enExample)
EP (2) EP2584071B1 (enExample)
JP (3) JP2008515748A (enExample)
KR (1) KR20070054719A (enExample)
CN (1) CN101061262B (enExample)
TW (1) TWI313892B (enExample)
WO (1) WO2006041659A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210050856A (ko) 2019-10-29 2021-05-10 에스케이씨 주식회사 탄화규소 잉곳의 제조방법, 탄화규소 웨이퍼의 제조방법 및 이의 성장 시스템

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KR20210050856A (ko) 2019-10-29 2021-05-10 에스케이씨 주식회사 탄화규소 잉곳의 제조방법, 탄화규소 웨이퍼의 제조방법 및 이의 성장 시스템
US11359306B2 (en) 2019-10-29 2022-06-14 Senic Inc. Method for preparing a SiC ingot and device for preparing a SiC ingot wherein electrical resistance of crucible body is 2.9 ohms or more

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US8785946B2 (en) 2014-07-22
CN101061262A (zh) 2007-10-24
JP2008515748A (ja) 2008-05-15
US20080169476A1 (en) 2008-07-17
JP5410572B2 (ja) 2014-02-05
CN101061262B (zh) 2013-06-12
WO2006041659A3 (en) 2006-06-08
EP1797225B2 (en) 2017-10-18
JP2009035477A (ja) 2009-02-19
TWI313892B (en) 2009-08-21
EP1797225B1 (en) 2013-03-06
WO2006041659A2 (en) 2006-04-20
JP2012214379A (ja) 2012-11-08
EP2584071A1 (en) 2013-04-24
US20060073707A1 (en) 2006-04-06
US7314520B2 (en) 2008-01-01
US8384090B2 (en) 2013-02-26
EP2584071B1 (en) 2014-10-22
TW200629390A (en) 2006-08-16
US20130161651A1 (en) 2013-06-27
EP1797225A2 (en) 2007-06-20

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