JP5572295B2 - 低1cらせん転位の3インチ炭化珪素ウェハ - Google Patents
低1cらせん転位の3インチ炭化珪素ウェハ Download PDFInfo
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- JP5572295B2 JP5572295B2 JP2008202193A JP2008202193A JP5572295B2 JP 5572295 B2 JP5572295 B2 JP 5572295B2 JP 2008202193 A JP2008202193 A JP 2008202193A JP 2008202193 A JP2008202193 A JP 2008202193A JP 5572295 B2 JP5572295 B2 JP 5572295B2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 75
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 67
- 239000013078 crystal Substances 0.000 claims description 119
- 230000007547 defect Effects 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 16
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 12
- 239000002019 doping agent Substances 0.000 claims description 11
- 239000002243 precursor Substances 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 125000004429 atom Chemical group 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- 125000005842 heteroatom Chemical group 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 40
- 238000000859 sublimation Methods 0.000 description 24
- 230000008022 sublimation Effects 0.000 description 24
- 238000000034 method Methods 0.000 description 14
- 239000000843 powder Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000005092 sublimation method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000005130 seeded sublimation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Description
Claims (15)
- 結晶の1cらせん転位欠陥レベルが低いSiCの高品質単結晶ウェハにおいて、
少なくとも76.2mm(約3インチ)の直径を有し、約500〜2500cm−2の表面1cらせん転位密度を有し、前記結晶が、4Hポリタイプを有し、
前記表面1cらせん転位密度は、その表面の測定可能なエリア上の1cらせん転位の数を表す高品質単結晶ウェハ。 - 約2000cm−2未満の1cらせん転位密度を有する、請求項1に記載のウェハ。
- 前記表面1cらせん転位密度が、1cらせん転位欠陥を優先的に強調するエッチングの後の前記表面上の1cらせん転位の総数を表す請求項1に記載のウェハ。
- 前記表面1cらせん転位密度が、溶融水酸化カリウムにおける表面のエッチングの後の前記表面の全1cらせん転位の総数を表す請求項3に記載のウェハ。
- 前記1cらせん転位密度が、約1500cm−2未満である請求項1に記載のウェハ。
- 前記1cらせん転位密度が、約1200cm−2未満である請求項1に記載のウェハ。
- 結晶の1cらせん転位欠陥レベルが低い高品質半導体前駆体ウェハにおいて、
少なくとも76.2mm(約3インチ)の直径を有する炭化珪素ウェハを備え、
前記ウェハが、4Hポリタイプを有し、
前記ウェハが、24,740〜123,700個の表面1cらせん転位を有し、前記表面1cらせん転位は、その表面の測定可能なエリア上の1cらせん転位の数を表す、高品質半導体前駆体ウェハ。 - 前記炭化珪素ウェハの前記表面上のIII族窒化物層を有する請求項1に記載のウェハ。
- 前記III族窒化物層が、GaN、AlGaN、AlN、AlInGaN、InN、AlInN、およびこれらの混合物からなる群から選択される請求項8に記載のウェハ。
- 複数の半導体デバイス前駆体を規定する前記ウェハのいくつかの部分上に複数のそれぞれのIII族窒化物エピタキシャル層を有する請求項1に記載のウェハ。
- 互いに対向する第1および第2のそれぞれの表面を有するバルク単結晶と、
前記炭化珪素基板上の複数のデバイスとを備え、前記デバイスの各々が、
前記基板上に位置し、前記エピタキシャル層を第1の導電型にするための適切なドーパント原子の濃度と、それぞれのソース、チャネル、およびドレイン部分とを有する、エピタキシャル層と、
前記チャネル部分上の金属酸化物層と、
前記金属酸化物層上の金属ゲートコンタクトであって、バイアスがかけられるときにアクティブチャネルを形成するための金属ゲートコンタクトとを備える請求項1に記載のウェハ。 - 互いに対向する第1および第2のそれぞれの表面を有するバルク単結晶と、
前記炭化珪素基板上の複数のデバイスとを備え、前記デバイスの各々が、
前記基板上の導電チャネルと、
前記導電チャネル上のソースおよびドレインと、
前記導電チャネル上のソースとドレインとの間にある金属ゲートコンタクトであって、バイアスがかけられるときにアクティブチャネルを形成するための金属ゲートコンタクトとを備える請求項1に記載のウェハ。 - 互いに対向する第1および第2のそれぞれの表面を有するバルク単結晶と、
前記単結晶炭化珪素基板上に位置付けられた複数の接合電界効果トランジスタとを備える請求項1に記載のウェハ。 - 互いに対向する第1および第2のそれぞれの表面を有するバルク単結晶と、
前記単結晶炭化珪素基板上に位置付けられた複数のヘテロ電界効果トランジスタとを備える請求項1に記載のウェハ。 - 互いに対向する第1および第2のそれぞれの表面を有するバルク単結晶と、
前記単結晶炭化珪素基板上に位置付けられた複数のダイオードとを備える請求項1に記載のウェハ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US10/957,806 | 2004-10-04 | ||
US10/957,806 US7314520B2 (en) | 2004-10-04 | 2004-10-04 | Low 1c screw dislocation 3 inch silicon carbide wafer |
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JP5572295B2 true JP5572295B2 (ja) | 2014-08-13 |
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JP2008202193A Active JP5572295B2 (ja) | 2004-10-04 | 2008-08-05 | 低1cらせん転位の3インチ炭化珪素ウェハ |
JP2012137108A Active JP5410572B2 (ja) | 2004-10-04 | 2012-06-18 | 低1cらせん転位の3インチ炭化珪素ウェハ |
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Country Status (7)
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US (3) | US7314520B2 (ja) |
EP (2) | EP1797225B2 (ja) |
JP (3) | JP2008515748A (ja) |
KR (1) | KR20070054719A (ja) |
CN (1) | CN101061262B (ja) |
TW (1) | TWI313892B (ja) |
WO (1) | WO2006041659A2 (ja) |
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EP1797225A2 (en) | 2007-06-20 |
EP1797225B2 (en) | 2017-10-18 |
JP5410572B2 (ja) | 2014-02-05 |
EP2584071B1 (en) | 2014-10-22 |
US20080169476A1 (en) | 2008-07-17 |
US8785946B2 (en) | 2014-07-22 |
CN101061262B (zh) | 2013-06-12 |
TW200629390A (en) | 2006-08-16 |
WO2006041659A3 (en) | 2006-06-08 |
KR20070054719A (ko) | 2007-05-29 |
JP2012214379A (ja) | 2012-11-08 |
CN101061262A (zh) | 2007-10-24 |
WO2006041659A2 (en) | 2006-04-20 |
US7314520B2 (en) | 2008-01-01 |
EP1797225B1 (en) | 2013-03-06 |
US8384090B2 (en) | 2013-02-26 |
US20130161651A1 (en) | 2013-06-27 |
EP2584071A1 (en) | 2013-04-24 |
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