|
US6814801B2
(en)
*
|
2002-06-24 |
2004-11-09 |
Cree, Inc. |
Method for producing semi-insulating resistivity in high purity silicon carbide crystals
|
|
US7601441B2
(en)
*
|
2002-06-24 |
2009-10-13 |
Cree, Inc. |
One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
|
|
US7314520B2
(en)
|
2004-10-04 |
2008-01-01 |
Cree, Inc. |
Low 1c screw dislocation 3 inch silicon carbide wafer
|
|
US7314521B2
(en)
*
|
2004-10-04 |
2008-01-01 |
Cree, Inc. |
Low micropipe 100 mm silicon carbide wafer
|
|
US7563321B2
(en)
*
|
2004-12-08 |
2009-07-21 |
Cree, Inc. |
Process for producing high quality large size silicon carbide crystals
|
|
US7794842B2
(en)
|
2004-12-27 |
2010-09-14 |
Nippon Steel Corporation |
Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of same
|
|
US7919815B1
(en)
*
|
2005-02-24 |
2011-04-05 |
Saint-Gobain Ceramics & Plastics, Inc. |
Spinel wafers and methods of preparation
|
|
US8764903B2
(en)
|
2009-05-05 |
2014-07-01 |
Sixpoint Materials, Inc. |
Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
|
|
US8361227B2
(en)
|
2006-09-26 |
2013-01-29 |
Ii-Vi Incorporated |
Silicon carbide single crystals with low boron content
|
|
US8858709B1
(en)
|
2006-04-11 |
2014-10-14 |
Ii-Vi Incorporated |
Silicon carbide with low nitrogen content and method for preparation
|
|
US7767022B1
(en)
|
2006-04-19 |
2010-08-03 |
Ii-Vi Incorporated |
Method of annealing a sublimation grown crystal
|
|
JP4954596B2
(ja)
*
|
2006-04-21 |
2012-06-20 |
新日本製鐵株式会社 |
炭化珪素単結晶インゴットの製造方法
|
|
US8980445B2
(en)
*
|
2006-07-06 |
2015-03-17 |
Cree, Inc. |
One hundred millimeter SiC crystal grown on off-axis seed
|
|
JP5562641B2
(ja)
*
|
2006-09-14 |
2014-07-30 |
クリー インコーポレイテッド |
マイクロパイプ・フリーの炭化ケイ素およびその製造方法
|
|
JP5081423B2
(ja)
*
|
2006-10-03 |
2012-11-28 |
株式会社ブリヂストン |
種結晶固定装置
|
|
US8218211B2
(en)
|
2007-05-16 |
2012-07-10 |
Seereal Technologies S.A. |
Holographic display with a variable beam deflection
|
|
CN101802273B
(zh)
|
2007-09-12 |
2013-04-17 |
昭和电工株式会社 |
外延SiC单晶衬底及外延SiC单晶衬底的制造方法
|
|
JP2009137777A
(ja)
*
|
2007-12-04 |
2009-06-25 |
Sumitomo Electric Ind Ltd |
ＡｌＮ結晶およびその成長方法
|
|
CN101896646A
(zh)
*
|
2007-12-12 |
2010-11-24 |
陶氏康宁公司 |
通过升华/凝结方法生产大的均匀碳化硅晶锭的方法
|
|
EP2245218B1
(en)
*
|
2008-02-25 |
2019-06-19 |
SixPoint Materials, Inc. |
Method for producing group iii nitride wafers and group iii nitride wafers
|
|
JP5461859B2
(ja)
*
|
2008-03-28 |
2014-04-02 |
Ｊｆｅミネラル株式会社 |
ＡｌＮバルク単結晶及び半導体デバイス並びにＡｌＮ単結晶バルクの製造方法
|
|
EP2291551B1
(en)
|
2008-06-04 |
2018-04-25 |
SixPoint Materials, Inc. |
High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystal
|
|
EP2281076A1
(en)
|
2008-06-04 |
2011-02-09 |
Sixpoint Materials, Inc. |
Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth
|
|
JP5377521B2
(ja)
|
2008-06-12 |
2013-12-25 |
シックスポイント マテリアルズ， インコーポレイテッド |
Ｉｉｉ族窒化物ウェハーを試験する方法および試験データを伴うｉｉｉ族窒化物ウェハー
|
|
JP2010095397A
(ja)
*
|
2008-10-15 |
2010-04-30 |
Nippon Steel Corp |
炭化珪素単結晶及び炭化珪素単結晶ウェハ
|
|
WO2010045567A1
(en)
*
|
2008-10-16 |
2010-04-22 |
Sixpoint Materials, Inc. |
Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals
|
|
US8852341B2
(en)
*
|
2008-11-24 |
2014-10-07 |
Sixpoint Materials, Inc. |
Methods for producing GaN nutrient for ammonothermal growth
|
|
DE112009003667B4
(de)
*
|
2008-12-08 |
2024-04-25 |
Ii-Vi Inc. |
Verbessertes axial-gradient-transport- (agt-) züchtungsverfahren und -apparat unter anwendung von resistivem erhitzen
|
|
DE102009016137B4
(de)
*
|
2009-04-03 |
2012-12-20 |
Sicrystal Ag |
Herstellungsverfahren für einen versetzungsarmen AlN-Volumeneinkristall und versetzungsarmes einkristallines AlN-Substrat
|
|
US8574528B2
(en)
|
2009-09-04 |
2013-11-05 |
University Of South Carolina |
Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
|
|
JP5346788B2
(ja)
*
|
2009-11-30 |
2013-11-20 |
昭和電工株式会社 |
炭化珪素単結晶の製造方法
|
|
JP5346821B2
(ja)
*
|
2010-01-15 |
2013-11-20 |
株式会社ブリヂストン |
炭化ケイ素単結晶の製造装置
|
|
JP2011184208A
(ja)
*
|
2010-03-04 |
2011-09-22 |
Bridgestone Corp |
炭化ケイ素単結晶の製造装置及び炭化ケイ素単結晶の製造方法
|
|
JP2011195360A
(ja)
*
|
2010-03-18 |
2011-10-06 |
Sumitomo Electric Ind Ltd |
坩堝、結晶製造装置、および支持台
|
|
PL234396B1
(pl)
*
|
2010-04-01 |
2020-02-28 |
Instytut Tech Materialow Elektronicznych |
Sposób wytwarzania kryształów, zwłaszcza węglika krzemu, z fazy gazowej
|
|
US8377806B2
(en)
*
|
2010-04-28 |
2013-02-19 |
Cree, Inc. |
Method for controlled growth of silicon carbide and structures produced by same
|
|
JP5384437B2
(ja)
*
|
2010-06-18 |
2014-01-08 |
東京エレクトロン株式会社 |
塗布方法
|
|
JP2012066959A
(ja)
*
|
2010-09-22 |
2012-04-05 |
Bridgestone Corp |
単結晶製造装置
|
|
RU2433213C1
(ru)
*
|
2010-10-12 |
2011-11-10 |
Общество С Ограниченной Ответственностью "Гранник" |
СПОСОБ ПОЛУЧЕНИЯ МОНОКРИСТАЛЛИЧЕСКОГО SiC
|
|
JP6025306B2
(ja)
*
|
2011-05-16 |
2016-11-16 |
株式会社豊田中央研究所 |
ＳｉＣ単結晶、ＳｉＣウェハ及び半導体デバイス
|
|
JP5716998B2
(ja)
*
|
2011-06-01 |
2015-05-13 |
住友電気工業株式会社 |
炭化珪素結晶インゴットおよび炭化珪素結晶ウエハ
|
|
KR20120135735A
(ko)
*
|
2011-06-07 |
2012-12-17 |
엘지이노텍 주식회사 |
잉곳 제조 장치
|
|
KR20120136219A
(ko)
*
|
2011-06-08 |
2012-12-18 |
엘지이노텍 주식회사 |
잉곳 제조 장치
|
|
KR20120138112A
(ko)
*
|
2011-06-14 |
2012-12-24 |
엘지이노텍 주식회사 |
잉곳 제조 장치
|
|
KR20120138445A
(ko)
*
|
2011-06-15 |
2012-12-26 |
엘지이노텍 주식회사 |
잉곳 제조 장치
|
|
JP5817236B2
(ja)
*
|
2011-06-17 |
2015-11-18 |
株式会社Sumco |
半導体試料中の金属汚染評価方法および半導体基板の製造方法
|
|
KR20120140151A
(ko)
*
|
2011-06-20 |
2012-12-28 |
엘지이노텍 주식회사 |
잉곳 제조 장치
|
|
KR101854727B1
(ko)
|
2011-06-24 |
2018-05-04 |
엘지이노텍 주식회사 |
잉곳 제조 장치
|
|
CN103608498B
(zh)
|
2011-07-20 |
2018-04-10 |
住友电气工业株式会社 |
碳化硅衬底、半导体装置及它们的制造方法
|
|
KR20130014272A
(ko)
*
|
2011-07-29 |
2013-02-07 |
엘지이노텍 주식회사 |
잉곳 제조 장치
|
|
JP2013060328A
(ja)
*
|
2011-09-14 |
2013-04-04 |
Sumitomo Electric Ind Ltd |
炭化珪素結晶の製造方法
|
|
US9644288B2
(en)
|
2011-11-23 |
2017-05-09 |
University Of South Carolina |
Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
|
|
US8900979B2
(en)
|
2011-11-23 |
2014-12-02 |
University Of South Carolina |
Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
|
|
US8758510B2
(en)
|
2011-12-28 |
2014-06-24 |
Sicrystal Aktiengesellschaft |
Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course
|
|
JP5803786B2
(ja)
*
|
2012-04-02 |
2015-11-04 |
住友電気工業株式会社 |
炭化珪素基板、半導体装置およびこれらの製造方法
|
|
US9136341B2
(en)
|
2012-04-18 |
2015-09-15 |
Rf Micro Devices, Inc. |
High voltage field effect transistor finger terminations
|
|
US9124221B2
(en)
|
2012-07-16 |
2015-09-01 |
Rf Micro Devices, Inc. |
Wide bandwidth radio frequency amplier having dual gate transistors
|
|
US9917080B2
(en)
|
2012-08-24 |
2018-03-13 |
Qorvo US. Inc. |
Semiconductor device with electrical overstress (EOS) protection
|
|
US8988097B2
(en)
|
2012-08-24 |
2015-03-24 |
Rf Micro Devices, Inc. |
Method for on-wafer high voltage testing of semiconductor devices
|
|
US9202874B2
(en)
|
2012-08-24 |
2015-12-01 |
Rf Micro Devices, Inc. |
Gallium nitride (GaN) device with leakage current-based over-voltage protection
|
|
US9147632B2
(en)
*
|
2012-08-24 |
2015-09-29 |
Rf Micro Devices, Inc. |
Semiconductor device having improved heat dissipation
|
|
US9142620B2
(en)
|
2012-08-24 |
2015-09-22 |
Rf Micro Devices, Inc. |
Power device packaging having backmetals couple the plurality of bond pads to the die backside
|
|
WO2014035794A1
(en)
|
2012-08-27 |
2014-03-06 |
Rf Micro Devices, Inc |
Lateral semiconductor device with vertical breakdown region
|
|
US9070761B2
(en)
|
2012-08-27 |
2015-06-30 |
Rf Micro Devices, Inc. |
Field effect transistor (FET) having fingers with rippled edges
|
|
US8860040B2
(en)
|
2012-09-11 |
2014-10-14 |
Dow Corning Corporation |
High voltage power semiconductor devices on SiC
|
|
US9018639B2
(en)
|
2012-10-26 |
2015-04-28 |
Dow Corning Corporation |
Flat SiC semiconductor substrate
|
|
US9325281B2
(en)
|
2012-10-30 |
2016-04-26 |
Rf Micro Devices, Inc. |
Power amplifier controller
|
|
JP6116866B2
(ja)
|
2012-11-19 |
2017-04-19 |
株式会社豊田中央研究所 |
ＳｉＣ単結晶成長用種結晶、及びＳｉＣ単結晶の製造方法
|
|
JP2014130951A
(ja)
*
|
2012-12-28 |
2014-07-10 |
Sumitomo Electric Ind Ltd |
半導体装置
|
|
US9017804B2
(en)
|
2013-02-05 |
2015-04-28 |
Dow Corning Corporation |
Method to reduce dislocations in SiC crystal growth
|
|
US9797064B2
(en)
|
2013-02-05 |
2017-10-24 |
Dow Corning Corporation |
Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
|
|
US9738991B2
(en)
|
2013-02-05 |
2017-08-22 |
Dow Corning Corporation |
Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
|
|
US8940614B2
(en)
|
2013-03-15 |
2015-01-27 |
Dow Corning Corporation |
SiC substrate with SiC epitaxial film
|
|
JP2014201498A
(ja)
*
|
2013-04-08 |
2014-10-27 |
住友電気工業株式会社 |
炭化珪素単結晶の製造方法
|
|
US9919972B2
(en)
|
2013-05-02 |
2018-03-20 |
Melior Innovations, Inc. |
Pressed and self sintered polymer derived SiC materials, applications and devices
|
|
US10322936B2
(en)
|
2013-05-02 |
2019-06-18 |
Pallidus, Inc. |
High purity polysilocarb materials, applications and processes
|
|
US11091370B2
(en)
|
2013-05-02 |
2021-08-17 |
Pallidus, Inc. |
Polysilocarb based silicon carbide materials, applications and devices
|
|
US9657409B2
(en)
|
2013-05-02 |
2017-05-23 |
Melior Innovations, Inc. |
High purity SiOC and SiC, methods compositions and applications
|
|
US20140332048A1
(en)
*
|
2013-05-08 |
2014-11-13 |
Vern Green Power Solutions, Llc |
Thermoelectric device
|
|
CN103320851A
(zh)
*
|
2013-06-05 |
2013-09-25 |
中国科学院上海硅酸盐研究所 |
大尺寸15r 碳化硅晶体的制备方法
|
|
JP2016532629A
(ja)
*
|
2013-09-06 |
2016-10-20 |
ジーティーエイティー コーポレーションＧｔａｔ Ｃｏｒｐｏｒａｔｉｏｎ |
炭化ケイ素前駆体からのバルクの炭化ケイ素の製造方法及び装置
|
|
JP6241254B2
(ja)
*
|
2013-12-17 |
2017-12-06 |
住友電気工業株式会社 |
単結晶の製造方法
|
|
JP6241264B2
(ja)
*
|
2013-12-24 |
2017-12-06 |
住友電気工業株式会社 |
炭化珪素単結晶の製造方法
|
|
US9455327B2
(en)
|
2014-06-06 |
2016-09-27 |
Qorvo Us, Inc. |
Schottky gated transistor with interfacial layer
|
|
US9279192B2
(en)
|
2014-07-29 |
2016-03-08 |
Dow Corning Corporation |
Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
|
|
US9536803B2
(en)
|
2014-09-05 |
2017-01-03 |
Qorvo Us, Inc. |
Integrated power module with improved isolation and thermal conductivity
|
|
US10062684B2
(en)
|
2015-02-04 |
2018-08-28 |
Qorvo Us, Inc. |
Transition frequency multiplier semiconductor device
|
|
US10615158B2
(en)
|
2015-02-04 |
2020-04-07 |
Qorvo Us, Inc. |
Transition frequency multiplier semiconductor device
|
|
DE102015111213B4
(de)
|
2015-07-10 |
2023-05-04 |
Infineon Technologies Ag |
Verfahren zum Verringern einer bipolaren Degradation bei einem SiC-Halbleiterbauelement und Halbleiterbauelement
|
|
JP6578994B2
(ja)
|
2016-03-04 |
2019-09-25 |
株式会社デンソー |
炭化珪素にて構成される半導体基板およびその製造方法
|
|
TW201807272A
(zh)
|
2016-08-26 |
2018-03-01 |
國家中山科學研究院 |
一種用於成長單晶晶體之裝置
|
|
CN106637416B
(zh)
*
|
2016-12-28 |
2018-11-20 |
厦门大学 |
矢量强磁场下分子束外延及其原位表征装置
|
|
US10577720B2
(en)
|
2017-01-04 |
2020-03-03 |
Cree, Inc. |
Stabilized, high-doped silicon carbide
|
|
CN106757357B
(zh)
*
|
2017-01-10 |
2019-04-09 |
山东天岳先进材料科技有限公司 |
一种高纯半绝缘碳化硅衬底的制备方法
|
|
WO2018160785A1
(en)
*
|
2017-03-02 |
2018-09-07 |
University Of South Carolina |
PINNING THE CONVERSION POINT BELOW THE EPILAYER INTERFACE FOR SiC POWER DEVICE
|
|
WO2018183585A1
(en)
|
2017-03-29 |
2018-10-04 |
Pallidus, Inc. |
Sic volumetric shapes and methods of forming boules
|
|
US10793972B1
(en)
|
2017-07-11 |
2020-10-06 |
Ii-Vi Delaware, Inc. |
High quality silicon carbide crystals and method of making the same
|
|
KR102381395B1
(ko)
*
|
2017-09-18 |
2022-04-01 |
한국전기연구원 |
절연 또는 반절연 ６Ｈ-ＳｉＣ 기판에 구현된 ＳｉＣ 반도체 소자 및 그 제조 방법
|
|
JP7009147B2
(ja)
*
|
2017-09-29 |
2022-01-25 |
富士電機株式会社 |
炭化珪素半導体基板、炭化珪素半導体基板の製造方法および炭化珪素半導体装置
|
|
TWI648525B
(zh)
|
2017-12-18 |
2019-01-21 |
國家中山科學研究院 |
一種用於量測坩堝內部熱場分布之裝置
|
|
JP7030506B2
(ja)
*
|
2017-12-22 |
2022-03-07 |
昭和電工株式会社 |
炭化珪素単結晶インゴットの製造方法
|
|
JP6915526B2
(ja)
|
2017-12-27 |
2021-08-04 |
信越半導体株式会社 |
炭化珪素単結晶の製造方法
|
|
CN108381326B
(zh)
*
|
2018-02-06 |
2019-10-11 |
西京学院 |
一种碳化硅超细粉制备设备
|
|
JP6879236B2
(ja)
|
2018-03-13 |
2021-06-02 |
信越半導体株式会社 |
炭化珪素単結晶の製造方法
|
|
CN109280966B
(zh)
*
|
2018-10-16 |
2019-07-05 |
山东天岳先进材料科技有限公司 |
掺杂少量钒的高质量半绝缘碳化硅单晶及衬底的制备方法
|
|
EP3666936A4
(en)
*
|
2018-10-16 |
2020-10-28 |
SICC Co., Ltd |
SEMI-INSULATING SILICON CARBIDE MONOCRISTAL DOPED WITH A SMALL QUANTITY OF VANADIUM, SUBSTRATE PREPARED THEREOF, AND ITS PREPARATION PROCESS
|
|
CN109338463B
(zh)
*
|
2018-10-16 |
2020-08-11 |
山东天岳先进材料科技有限公司 |
一种高纯碳化硅单晶衬底
|
|
CN109554759A
(zh)
*
|
2018-12-27 |
2019-04-02 |
芜湖启迪半导体有限公司 |
一种碳化硅籽晶的粘接方法以及碳化硅单晶晶锭的制备方法
|
|
US10562130B1
(en)
|
2018-12-29 |
2020-02-18 |
Cree, Inc. |
Laser-assisted method for parting crystalline material
|
|
US11024501B2
(en)
|
2018-12-29 |
2021-06-01 |
Cree, Inc. |
Carrier-assisted method for parting crystalline material along laser damage region
|
|
US10576585B1
(en)
|
2018-12-29 |
2020-03-03 |
Cree, Inc. |
Laser-assisted method for parting crystalline material
|
|
US10611052B1
(en)
|
2019-05-17 |
2020-04-07 |
Cree, Inc. |
Silicon carbide wafers with relaxed positive bow and related methods
|
|
TWI723415B
(zh)
*
|
2019-06-05 |
2021-04-01 |
環球晶圓股份有限公司 |
碳化矽晶體及碳化矽晶種片
|
|
WO2020255343A1
(ja)
*
|
2019-06-20 |
2020-12-24 |
三菱電機株式会社 |
炭化ケイ素単結晶、半導体素子
|
|
JP7393900B2
(ja)
*
|
2019-09-24 |
2023-12-07 |
一般財団法人電力中央研究所 |
炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
|
|
KR102340110B1
(ko)
|
2019-10-29 |
2021-12-17 |
주식회사 쎄닉 |
탄화규소 잉곳, 웨이퍼 및 이의 제조방법
|
|
EP4081674A1
(en)
|
2019-12-27 |
2022-11-02 |
Wolfspeed, Inc. |
Large diameter silicon carbide wafers
|
|
US12006591B2
(en)
|
2020-03-02 |
2024-06-11 |
Ii-Vi Advanced Materials, Llc |
Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material
|
|
TWI865578B
(zh)
*
|
2020-06-18 |
2024-12-11 |
盛新材料科技股份有限公司 |
半絕緣單晶碳化矽塊材以及粉末
|
|
US12297561B2
(en)
|
2020-06-18 |
2025-05-13 |
Taisic Materials Corp. |
Semi-insulating single-crystal silicon carbide bulk material and powder
|
|
CN113818081A
(zh)
*
|
2020-06-18 |
2021-12-21 |
盛新材料科技股份有限公司 |
半绝缘单晶碳化硅块材以及粉末
|
|
JP2021195301A
(ja)
*
|
2020-06-18 |
2021-12-27 |
盛新材料科技股▲ふん▼有限公司Taisic Materials Corp. |
半絶縁性単結晶炭化ケイ素粉末の製造方法
|
|
TWI766775B
(zh)
*
|
2020-07-27 |
2022-06-01 |
環球晶圓股份有限公司 |
碳化矽晶圓的製造方法以及半導體結構
|
|
TWI830039B
(zh)
|
2020-07-27 |
2024-01-21 |
環球晶圓股份有限公司 |
碳化矽晶碇的製造方法
|
|
TWI794908B
(zh)
|
2020-07-27 |
2023-03-01 |
環球晶圓股份有限公司 |
碳化矽晶圓及其製備方法
|
|
US12125701B2
(en)
|
2020-12-15 |
2024-10-22 |
Wolfspeed, Inc. |
Large dimension silicon carbide single crystalline materials with reduced crystallographic stress
|
|
US11827999B2
(en)
|
2021-01-12 |
2023-11-28 |
Applied Materials, Inc. |
Methods of forming silicon carbide coated base substrates at multiple temperatures
|
|
JP6903362B1
(ja)
*
|
2021-02-05 |
2021-07-14 |
株式会社Brillar |
合成宝石用結晶体の製造方法
|
|
CN113026105B
(zh)
*
|
2021-02-26 |
2022-07-05 |
哈尔滨科友半导体产业装备与技术研究院有限公司 |
一种使用预处理粉料制备碳化硅晶体的生长方法
|
|
WO2022192473A2
(en)
*
|
2021-03-09 |
2022-09-15 |
Central Coast Agriculture, Inc. |
Systems and methods for isolating materials
|
|
US12024794B2
(en)
|
2021-06-17 |
2024-07-02 |
Wolfspeed, Inc. |
Reduced optical absorption for silicon carbide crystalline materials
|
|
CN113540313B
(zh)
*
|
2021-06-18 |
2023-05-19 |
泉州三安半导体科技有限公司 |
一种led芯片及其制造方法、半导体发光器件及显示装置
|
|
CN113264774A
(zh)
*
|
2021-06-24 |
2021-08-17 |
郑州航空工业管理学院 |
一种晶种诱导微波合成的SiC晶体及其制备方法
|
|
CN114134573B
(zh)
*
|
2021-11-30 |
2024-04-19 |
武汉大学 |
用于降低氮化铝晶体生长应力的装置
|
|
CN114093765B
(zh)
*
|
2022-01-18 |
2023-02-28 |
浙江大学杭州国际科创中心 |
一种提高碳化硅薄膜少子寿命的方法
|
|
JP7710614B2
(ja)
*
|
2022-06-30 |
2025-07-18 |
日本碍子株式会社 |
複合基板および１３族元素窒化物エピタキシャル成長用基板
|