CN106757357B - 一种高纯半绝缘碳化硅衬底的制备方法 - Google Patents
一种高纯半绝缘碳化硅衬底的制备方法 Download PDFInfo
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- CN106757357B CN106757357B CN201710019521.5A CN201710019521A CN106757357B CN 106757357 B CN106757357 B CN 106757357B CN 201710019521 A CN201710019521 A CN 201710019521A CN 106757357 B CN106757357 B CN 106757357B
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- silicon carbide
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
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CN106757357B true CN106757357B (zh) | 2019-04-09 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107723798B (zh) * | 2017-10-30 | 2020-06-02 | 中国电子科技集团公司第四十六研究所 | 一种高效率制备高纯半绝缘碳化硅单晶生长装置及方法 |
CN107974712A (zh) * | 2017-11-14 | 2018-05-01 | 山东天岳先进材料科技有限公司 | 一种半绝缘碳化硅单晶的制备方法 |
DE102018203945B4 (de) * | 2018-03-15 | 2023-08-10 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben |
KR102345680B1 (ko) * | 2018-10-16 | 2021-12-29 | 에스아이씨씨 컴퍼니 리미티드 | 고순도 탄화규소 단결정 기판 및 그 제조 방법, 응용 |
CN109234802B (zh) * | 2018-10-16 | 2019-07-23 | 山东天岳先进材料科技有限公司 | 一种制备高质量的半绝缘碳化硅单晶衬底的方法 |
CN109338463B (zh) * | 2018-10-16 | 2020-08-11 | 山东天岳先进材料科技有限公司 | 一种高纯碳化硅单晶衬底 |
CN111197181B (zh) * | 2020-01-08 | 2021-04-30 | 青岛佳恩半导体有限公司 | 一种高纯度超薄碳化硅衬底制备方法 |
CN114395804B (zh) * | 2022-01-14 | 2022-12-02 | 浙江大学杭州国际科创中心 | 一种导电型碳化硅衬底加工方法 |
Citations (2)
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CN102560672A (zh) * | 2010-12-31 | 2012-07-11 | 中国科学院物理研究所 | 半绝缘碳化硅单晶材料 |
CN103114336A (zh) * | 2013-03-12 | 2013-05-22 | 中国科学院上海硅酸盐研究所 | 碳化硅晶片的退火方法 |
Family Cites Families (2)
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US6814801B2 (en) * | 2002-06-24 | 2004-11-09 | Cree, Inc. | Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
US7601441B2 (en) * | 2002-06-24 | 2009-10-13 | Cree, Inc. | One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102560672A (zh) * | 2010-12-31 | 2012-07-11 | 中国科学院物理研究所 | 半绝缘碳化硅单晶材料 |
CN103114336A (zh) * | 2013-03-12 | 2013-05-22 | 中国科学院上海硅酸盐研究所 | 碳化硅晶片的退火方法 |
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Effective date of registration: 20171201 Address after: 250100 Shandong city of Ji'nan province high tech Zone Xinyu Road West Century wealth center block AB room 1106-6-01 Applicant after: Shandong Tianyue Advanced Material Technology Co., Ltd. Address before: 250118 Shandong province Huaiyin District of Ji'nan city in the middle Mile Lake Applicant before: Shandong Tianyue Crystal Material Co., Ltd. |
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Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co., Ltd Address before: Room 1106-6-01, AB Block, Century Fortune Center, West Side of Xinyu Road, Jinan High-tech Zone, Shandong Province Patentee before: Shandong Tianyue Advanced Materials Technology Co.,Ltd. |