ATE335872T1 - Vorrichtung und verfahren zur herstellung von einkristallen durch dampfphasenabscheidung - Google Patents

Vorrichtung und verfahren zur herstellung von einkristallen durch dampfphasenabscheidung

Info

Publication number
ATE335872T1
ATE335872T1 AT04008697T AT04008697T ATE335872T1 AT E335872 T1 ATE335872 T1 AT E335872T1 AT 04008697 T AT04008697 T AT 04008697T AT 04008697 T AT04008697 T AT 04008697T AT E335872 T1 ATE335872 T1 AT E335872T1
Authority
AT
Austria
Prior art keywords
vapor phase
single crystals
phase deposition
producing single
crystals
Prior art date
Application number
AT04008697T
Other languages
English (en)
Inventor
Erik Janzen
Peter Raback
Alexandre Ellison
Original Assignee
Norstel Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=32965050&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE335872(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from SE0301225A external-priority patent/SE0301225L/xx
Application filed by Norstel Ab filed Critical Norstel Ab
Application granted granted Critical
Publication of ATE335872T1 publication Critical patent/ATE335872T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
AT04008697T 2003-04-24 2004-04-13 Vorrichtung und verfahren zur herstellung von einkristallen durch dampfphasenabscheidung ATE335872T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE0301225A SE0301225L (sv) 2003-04-24 2003-04-24 Apparat och metod för tillverkning av monokristaller genom gasdeposition
US46580003P 2003-04-28 2003-04-28

Publications (1)

Publication Number Publication Date
ATE335872T1 true ATE335872T1 (de) 2006-09-15

Family

ID=32965050

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04008697T ATE335872T1 (de) 2003-04-24 2004-04-13 Vorrichtung und verfahren zur herstellung von einkristallen durch dampfphasenabscheidung

Country Status (7)

Country Link
US (2) US7361222B2 (de)
EP (1) EP1471168B2 (de)
JP (1) JP5093974B2 (de)
CN (1) CN100414004C (de)
AT (1) ATE335872T1 (de)
DE (1) DE602004001802T3 (de)
IT (1) ITTO20040245A1 (de)

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WO2024056139A1 (de) 2022-09-16 2024-03-21 Pva Tepla Ag Pvt-verfahren und apparatur zum prozesssicheren herstellen von einkristallen
JP2024081427A (ja) * 2022-12-06 2024-06-18 株式会社デンソー 炭化珪素単結晶の製造方法および炭化珪素単結晶
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CN120945471B (zh) * 2025-10-17 2026-01-30 通威微电子有限公司 碳化硅晶体扩径生长装置及方法

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JP3959952B2 (ja) * 2000-11-10 2007-08-15 株式会社デンソー 炭化珪素単結晶の製造方法及び製造装置
JP4742448B2 (ja) † 2001-06-06 2011-08-10 株式会社デンソー 炭化珪素単結晶の製造方法及び製造装置
ITMI20031196A1 (it) † 2003-06-13 2004-12-14 Lpe Spa Sistema per crescere cristalli di carburo di silicio

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JP5093974B2 (ja) 2012-12-12
EP1471168A1 (de) 2004-10-27
JP2004323351A (ja) 2004-11-18
CN1570225A (zh) 2005-01-26
US20080149020A1 (en) 2008-06-26
DE602004001802D1 (de) 2006-09-21
US20050000406A1 (en) 2005-01-06
DE602004001802T2 (de) 2007-10-11
EP1471168B2 (de) 2011-08-10
EP1471168B1 (de) 2006-08-09
ITTO20040245A1 (it) 2004-07-20
US7361222B2 (en) 2008-04-22
DE602004001802T3 (de) 2012-01-26

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