DE69509678D1 - Epitaktische züchtung von silizium carbidund so hergestellte silizium carbid-strukturen - Google Patents

Epitaktische züchtung von silizium carbidund so hergestellte silizium carbid-strukturen

Info

Publication number
DE69509678D1
DE69509678D1 DE69509678T DE69509678T DE69509678D1 DE 69509678 D1 DE69509678 D1 DE 69509678D1 DE 69509678 T DE69509678 T DE 69509678T DE 69509678 T DE69509678 T DE 69509678T DE 69509678 D1 DE69509678 D1 DE 69509678D1
Authority
DE
Germany
Prior art keywords
silicon carbide
epitaxial layer
micropipe defects
melt
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69509678T
Other languages
English (en)
Other versions
DE69509678T3 (de
DE69509678T2 (de
Inventor
Vladimir Dmitriev
Svetlana V Rendakova
Vladimir A Ivantsov
Calvin Carter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Research Inc
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23360251&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69509678(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Cree Research Inc, Cree Inc filed Critical Cree Research Inc
Publication of DE69509678D1 publication Critical patent/DE69509678D1/de
Application granted granted Critical
Publication of DE69509678T2 publication Critical patent/DE69509678T2/de
Publication of DE69509678T3 publication Critical patent/DE69509678T3/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Farming Of Fish And Shellfish (AREA)
  • Artificial Fish Reefs (AREA)
  • Recrystallisation Techniques (AREA)
  • Carbon And Carbon Compounds (AREA)
DE69509678T 1994-11-30 1995-11-22 Epitaktische züchtung von siliciumcarbid und so hergestellte siliciumcarbidstrukturen Expired - Lifetime DE69509678T3 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US346618 1994-11-30
US08/346,618 US5679153A (en) 1994-11-30 1994-11-30 Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures
PCT/US1995/015276 WO1996017112A1 (en) 1994-11-30 1995-11-22 Epitaxial growth of silicon carbide and resulting silicon carbide structures

Publications (3)

Publication Number Publication Date
DE69509678D1 true DE69509678D1 (de) 1999-06-17
DE69509678T2 DE69509678T2 (de) 1999-12-02
DE69509678T3 DE69509678T3 (de) 2008-02-28

Family

ID=23360251

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69509678T Expired - Lifetime DE69509678T3 (de) 1994-11-30 1995-11-22 Epitaktische züchtung von siliciumcarbid und so hergestellte siliciumcarbidstrukturen

Country Status (11)

Country Link
US (1) US5679153A (de)
EP (1) EP0795049B2 (de)
JP (2) JP4065021B2 (de)
KR (1) KR100420182B1 (de)
CN (1) CN1069935C (de)
AT (1) ATE180023T1 (de)
AU (1) AU4369196A (de)
CA (1) CA2205918C (de)
DE (1) DE69509678T3 (de)
RU (1) RU2142027C1 (de)
WO (1) WO1996017112A1 (de)

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US6472300B2 (en) 1997-11-18 2002-10-29 Technologies And Devices International, Inc. Method for growing p-n homojunction-based structures utilizing HVPE techniques
US6559467B2 (en) 1997-11-18 2003-05-06 Technologies And Devices International, Inc. P-n heterojunction-based structures utilizing HVPE grown III-V compound layers
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US6599133B2 (en) 1997-11-18 2003-07-29 Technologies And Devices International, Inc. Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques
US6476420B2 (en) 1997-11-18 2002-11-05 Technologies And Devices International, Inc. P-N homojunction-based structures utilizing HVPE growth III-V compound layers
US6890809B2 (en) * 1997-11-18 2005-05-10 Technologies And Deviles International, Inc. Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device
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US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation
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JP5415853B2 (ja) * 2009-07-10 2014-02-12 東京エレクトロン株式会社 表面処理方法
US9464366B2 (en) * 2009-08-20 2016-10-11 The United States Of America, As Represented By The Secretary Of The Navy Reduction of basal plane dislocations in epitaxial SiC
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CN105140111A (zh) * 2015-08-11 2015-12-09 中国科学院半导体研究所 消除碳化硅外延面穿通缺陷的方法
CN108138360B (zh) * 2015-10-07 2020-12-08 住友电气工业株式会社 碳化硅外延基板及用于制造碳化硅半导体装置的方法
WO2017188381A1 (ja) 2016-04-28 2017-11-02 学校法人関西学院 気相エピタキシャル成長方法及びエピタキシャル層付き基板の製造方法
CN106012021B (zh) * 2016-06-30 2019-04-12 山东天岳先进材料科技有限公司 一种液相生长碳化硅的籽晶轴及方法
CN106048716A (zh) * 2016-06-30 2016-10-26 山东天岳先进材料科技有限公司 一种碳化硅衬底的优化方法
WO2018043171A1 (ja) * 2016-08-31 2018-03-08 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法、並びに、欠陥識別方法
CN111235633A (zh) * 2020-01-16 2020-06-05 中国科学院半导体研究所 一种在硅熔体表面通过cvd制备自支撑碳化硅晶圆的方法
CN112048769B (zh) * 2020-07-24 2021-08-31 山东天岳先进科技股份有限公司 一种碳化硅晶体微管愈合用装置及应用
CN111962157B (zh) * 2020-07-24 2021-09-28 山东天岳先进科技股份有限公司 一种碳化硅晶体微管的愈合方法及碳化硅产品和应用
CN115910755A (zh) * 2023-01-09 2023-04-04 宁波合盛新材料有限公司 一种碳化硅外延片及其制备方法

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Also Published As

Publication number Publication date
JP2007091589A (ja) 2007-04-12
CN1167511A (zh) 1997-12-10
CN1069935C (zh) 2001-08-22
ATE180023T1 (de) 1999-05-15
JP4414992B2 (ja) 2010-02-17
EP0795049A1 (de) 1997-09-17
WO1996017112A1 (en) 1996-06-06
JPH10509943A (ja) 1998-09-29
EP0795049B1 (de) 1999-05-12
RU2142027C1 (ru) 1999-11-27
DE69509678T3 (de) 2008-02-28
CA2205918A1 (en) 1996-06-06
KR100420182B1 (ko) 2004-05-27
CA2205918C (en) 2002-01-29
JP4065021B2 (ja) 2008-03-19
AU4369196A (en) 1996-06-19
DE69509678T2 (de) 1999-12-02
EP0795049B2 (de) 2007-09-12
US5679153A (en) 1997-10-21

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Owner name: CREE, INC., DURHAM, N.C., US