CN106012021B - 一种液相生长碳化硅的籽晶轴及方法 - Google Patents
一种液相生长碳化硅的籽晶轴及方法 Download PDFInfo
- Publication number
- CN106012021B CN106012021B CN201610505971.0A CN201610505971A CN106012021B CN 106012021 B CN106012021 B CN 106012021B CN 201610505971 A CN201610505971 A CN 201610505971A CN 106012021 B CN106012021 B CN 106012021B
- Authority
- CN
- China
- Prior art keywords
- graphite
- growth
- silicon carbide
- shaft
- axle cap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/32—Seed holders, e.g. chucks
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610505971.0A CN106012021B (zh) | 2016-06-30 | 2016-06-30 | 一种液相生长碳化硅的籽晶轴及方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610505971.0A CN106012021B (zh) | 2016-06-30 | 2016-06-30 | 一种液相生长碳化硅的籽晶轴及方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106012021A CN106012021A (zh) | 2016-10-12 |
CN106012021B true CN106012021B (zh) | 2019-04-12 |
Family
ID=57104725
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610505971.0A Active CN106012021B (zh) | 2016-06-30 | 2016-06-30 | 一种液相生长碳化硅的籽晶轴及方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106012021B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107059130B (zh) * | 2017-04-20 | 2019-06-18 | 山东大学 | 一种减少碳化硅单晶中包裹体的坩埚及利用坩埚生长单晶的方法 |
CN113584577A (zh) * | 2021-08-04 | 2021-11-02 | 中电化合物半导体有限公司 | 一种碳化硅的结晶界面控制结构、生长设备和制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN206052208U (zh) * | 2016-06-30 | 2017-03-29 | 山东天岳晶体材料有限公司 | 一种可调节碳化硅生长温度梯度的籽晶轴 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5679153A (en) * | 1994-11-30 | 1997-10-21 | Cree Research, Inc. | Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures |
JP4277926B1 (ja) * | 2007-11-27 | 2009-06-10 | トヨタ自動車株式会社 | 炭化珪素単結晶の成長法 |
EP2471981A4 (en) * | 2009-08-27 | 2013-04-17 | Nippon Steel & Sumitomo Metal Corp | SIC MONOCRYSTAL WAFER AND METHOD FOR MANUFACTURING THE SAME |
JP6046405B2 (ja) * | 2012-07-19 | 2016-12-14 | トヨタ自動車株式会社 | SiC単結晶のインゴット、その製造装置及びその製造方法 |
-
2016
- 2016-06-30 CN CN201610505971.0A patent/CN106012021B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN206052208U (zh) * | 2016-06-30 | 2017-03-29 | 山东天岳晶体材料有限公司 | 一种可调节碳化硅生长温度梯度的籽晶轴 |
Also Published As
Publication number | Publication date |
---|---|
CN106012021A (zh) | 2016-10-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6606638B2 (ja) | Fe−Ga基合金単結晶の育成方法及び育成装置 | |
JP2007197231A (ja) | SiC単結晶の製造方法 | |
KR100966182B1 (ko) | 반도체결정들을 강성 지지물로 탄소도핑과 저항률제어 및 열경사도제어에 의해 성장시키기 위한 방법 및 장치 | |
CN109234804A (zh) | 一种碳化硅单晶生长方法 | |
CN109234797B (zh) | 一种碳化硅单晶生长装置 | |
CN112481699A (zh) | 一种高质量碳化硅单晶的制备方法及碳化硅单晶 | |
CN106894091A (zh) | 用于物理气相传输法生长碳化硅晶体的坩埚 | |
CN110016718A (zh) | 一种用于生长高质量碳化硅晶体原料提纯的处理方法 | |
CN113249791A (zh) | 可调节生长气氛中碳硅比例的碳化硅单晶生长石墨坩埚 | |
CN106012021B (zh) | 一种液相生长碳化硅的籽晶轴及方法 | |
JPH07172998A (ja) | 炭化ケイ素単結晶の製造方法 | |
KR20090021144A (ko) | 단결정 SiC 및 그 제조 방법과 단결정 SiC의 제조 장치 | |
CN209144310U (zh) | 一种用于碳化硅单晶生长的装置 | |
CN204325549U (zh) | 一种碳化硅晶体生长装置 | |
CN206052208U (zh) | 一种可调节碳化硅生长温度梯度的籽晶轴 | |
CN116163007A (zh) | 一种碳化硅晶体生长装置 | |
JP6829767B2 (ja) | SiC結晶成長用SiC原料の製造方法及び製造装置 | |
CN116121870A (zh) | 溶液法生长SiC单晶的方法 | |
CN109234805A (zh) | 一种高纯碳化硅单晶的生长方法 | |
PL238539B1 (pl) | Sposób wytwarzania kryształów węglika krzemu | |
CN209082038U (zh) | 一种PVT法SiC单晶生长坩埚 | |
JP4053125B2 (ja) | SiC単結晶の合成方法 | |
WO2014103539A1 (ja) | SiC単結晶の製造方法 | |
CN105970286B (zh) | 一种多坩埚液相外延SiC晶体的方法 | |
CN110158151A (zh) | 用于碳化硅单晶生长的坩埚盖、坩埚及单晶生长的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20190322 Address after: 250100 AB Block 1106-6-01, Century Fortune Center, West Side of Xinyu Road, Jinan High-tech Zone, Shandong Province Applicant after: Shandong Tianyue Advanced Material Technology Co., Ltd. Address before: 250000 Meilihu Meili Road, Huaiyin District, Jinan City, Shandong Province Applicant before: Shandong Tianyue Crystal Material Co., Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co., Ltd Address before: 250100 AB Block 1106-6-01, Century Fortune Center, West Side of Xinyu Road, Jinan High-tech Zone, Shandong Province Patentee before: Shandong Tianyue Advanced Materials Technology Co.,Ltd. |