CN106012021A - 一种液相生长碳化硅的籽晶轴及方法 - Google Patents
一种液相生长碳化硅的籽晶轴及方法 Download PDFInfo
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- CN106012021A CN106012021A CN201610505971.0A CN201610505971A CN106012021A CN 106012021 A CN106012021 A CN 106012021A CN 201610505971 A CN201610505971 A CN 201610505971A CN 106012021 A CN106012021 A CN 106012021A
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- Prior art keywords
- shaft
- graphite
- growth
- silicon carbide
- carborundum
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/32—Seed holders, e.g. chucks
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN201610505971.0A CN106012021B (zh) | 2016-06-30 | 2016-06-30 | 一种液相生长碳化硅的籽晶轴及方法 |
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CN201610505971.0A CN106012021B (zh) | 2016-06-30 | 2016-06-30 | 一种液相生长碳化硅的籽晶轴及方法 |
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CN106012021A true CN106012021A (zh) | 2016-10-12 |
CN106012021B CN106012021B (zh) | 2019-04-12 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107059130A (zh) * | 2017-04-20 | 2017-08-18 | 山东大学 | 一种减少碳化硅单晶中包裹体的新型坩埚及利用坩埚生长单晶的方法 |
CN113584577A (zh) * | 2021-08-04 | 2021-11-02 | 中电化合物半导体有限公司 | 一种碳化硅的结晶界面控制结构、生长设备和制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1167511A (zh) * | 1994-11-30 | 1997-12-10 | 克里研究公司 | 减少碳化硅外延生长中微管缺陷形成的方法和所得到的碳化硅结构 |
CN101796227A (zh) * | 2007-11-27 | 2010-08-04 | 丰田自动车株式会社 | 碳化硅单晶的生长方法 |
WO2011024931A1 (ja) * | 2009-08-27 | 2011-03-03 | 住友金属工業株式会社 | SiC単結晶ウエハーとその製造方法 |
CN104471118A (zh) * | 2012-07-19 | 2015-03-25 | 丰田自动车株式会社 | SiC单晶锭及其制造方法 |
CN206052208U (zh) * | 2016-06-30 | 2017-03-29 | 山东天岳晶体材料有限公司 | 一种可调节碳化硅生长温度梯度的籽晶轴 |
-
2016
- 2016-06-30 CN CN201610505971.0A patent/CN106012021B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1167511A (zh) * | 1994-11-30 | 1997-12-10 | 克里研究公司 | 减少碳化硅外延生长中微管缺陷形成的方法和所得到的碳化硅结构 |
CN101796227A (zh) * | 2007-11-27 | 2010-08-04 | 丰田自动车株式会社 | 碳化硅单晶的生长方法 |
WO2011024931A1 (ja) * | 2009-08-27 | 2011-03-03 | 住友金属工業株式会社 | SiC単結晶ウエハーとその製造方法 |
CN104471118A (zh) * | 2012-07-19 | 2015-03-25 | 丰田自动车株式会社 | SiC单晶锭及其制造方法 |
CN206052208U (zh) * | 2016-06-30 | 2017-03-29 | 山东天岳晶体材料有限公司 | 一种可调节碳化硅生长温度梯度的籽晶轴 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107059130A (zh) * | 2017-04-20 | 2017-08-18 | 山东大学 | 一种减少碳化硅单晶中包裹体的新型坩埚及利用坩埚生长单晶的方法 |
CN107059130B (zh) * | 2017-04-20 | 2019-06-18 | 山东大学 | 一种减少碳化硅单晶中包裹体的坩埚及利用坩埚生长单晶的方法 |
CN113584577A (zh) * | 2021-08-04 | 2021-11-02 | 中电化合物半导体有限公司 | 一种碳化硅的结晶界面控制结构、生长设备和制备方法 |
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