ATE180023T1 - Epitaktische züchtung von silizium carbidund so hergestellte silizium carbid-strukturen - Google Patents

Epitaktische züchtung von silizium carbidund so hergestellte silizium carbid-strukturen

Info

Publication number
ATE180023T1
ATE180023T1 AT95942476T AT95942476T ATE180023T1 AT E180023 T1 ATE180023 T1 AT E180023T1 AT 95942476 T AT95942476 T AT 95942476T AT 95942476 T AT95942476 T AT 95942476T AT E180023 T1 ATE180023 T1 AT E180023T1
Authority
AT
Austria
Prior art keywords
epitaxial layer
silicon
silicon carbide
silicon carbid
micropipe defects
Prior art date
Application number
AT95942476T
Other languages
English (en)
Inventor
Vladimir A Dmitriev
Svetlana V Rendakova
Vladimir A Ivantsov
Calvin H Carter Jr
Original Assignee
Cree Research Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23360251&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE180023(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Cree Research Inc filed Critical Cree Research Inc
Application granted granted Critical
Publication of ATE180023T1 publication Critical patent/ATE180023T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Farming Of Fish And Shellfish (AREA)
  • Artificial Fish Reefs (AREA)
  • Recrystallisation Techniques (AREA)
  • Carbon And Carbon Compounds (AREA)
AT95942476T 1994-11-30 1995-11-22 Epitaktische züchtung von silizium carbidund so hergestellte silizium carbid-strukturen ATE180023T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/346,618 US5679153A (en) 1994-11-30 1994-11-30 Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures

Publications (1)

Publication Number Publication Date
ATE180023T1 true ATE180023T1 (de) 1999-05-15

Family

ID=23360251

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95942476T ATE180023T1 (de) 1994-11-30 1995-11-22 Epitaktische züchtung von silizium carbidund so hergestellte silizium carbid-strukturen

Country Status (11)

Country Link
US (1) US5679153A (de)
EP (1) EP0795049B2 (de)
JP (2) JP4065021B2 (de)
KR (1) KR100420182B1 (de)
CN (1) CN1069935C (de)
AT (1) ATE180023T1 (de)
AU (1) AU4369196A (de)
CA (1) CA2205918C (de)
DE (1) DE69509678T3 (de)
RU (1) RU2142027C1 (de)
WO (1) WO1996017112A1 (de)

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US6890809B2 (en) * 1997-11-18 2005-05-10 Technologies And Deviles International, Inc. Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device
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CN105140111A (zh) * 2015-08-11 2015-12-09 中国科学院半导体研究所 消除碳化硅外延面穿通缺陷的方法
CN108138360B (zh) * 2015-10-07 2020-12-08 住友电气工业株式会社 碳化硅外延基板及用于制造碳化硅半导体装置的方法
WO2017188381A1 (ja) 2016-04-28 2017-11-02 学校法人関西学院 気相エピタキシャル成長方法及びエピタキシャル層付き基板の製造方法
CN106012021B (zh) * 2016-06-30 2019-04-12 山东天岳先进材料科技有限公司 一种液相生长碳化硅的籽晶轴及方法
CN106048716A (zh) * 2016-06-30 2016-10-26 山东天岳先进材料科技有限公司 一种碳化硅衬底的优化方法
WO2018043171A1 (ja) * 2016-08-31 2018-03-08 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法、並びに、欠陥識別方法
CN111235633A (zh) * 2020-01-16 2020-06-05 中国科学院半导体研究所 一种在硅熔体表面通过cvd制备自支撑碳化硅晶圆的方法
CN112048769B (zh) * 2020-07-24 2021-08-31 山东天岳先进科技股份有限公司 一种碳化硅晶体微管愈合用装置及应用
CN111962157B (zh) * 2020-07-24 2021-09-28 山东天岳先进科技股份有限公司 一种碳化硅晶体微管的愈合方法及碳化硅产品和应用
CN115910755A (zh) * 2023-01-09 2023-04-04 宁波合盛新材料有限公司 一种碳化硅外延片及其制备方法

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Also Published As

Publication number Publication date
JP2007091589A (ja) 2007-04-12
CN1167511A (zh) 1997-12-10
CN1069935C (zh) 2001-08-22
JP4414992B2 (ja) 2010-02-17
EP0795049A1 (de) 1997-09-17
WO1996017112A1 (en) 1996-06-06
JPH10509943A (ja) 1998-09-29
EP0795049B1 (de) 1999-05-12
RU2142027C1 (ru) 1999-11-27
DE69509678T3 (de) 2008-02-28
CA2205918A1 (en) 1996-06-06
KR100420182B1 (ko) 2004-05-27
CA2205918C (en) 2002-01-29
JP4065021B2 (ja) 2008-03-19
DE69509678D1 (de) 1999-06-17
AU4369196A (en) 1996-06-19
DE69509678T2 (de) 1999-12-02
EP0795049B2 (de) 2007-09-12
US5679153A (en) 1997-10-21

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