JP4414992B2 - 炭化ケイ素構造体 - Google Patents
炭化ケイ素構造体 Download PDFInfo
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- JP4414992B2 JP4414992B2 JP2006272779A JP2006272779A JP4414992B2 JP 4414992 B2 JP4414992 B2 JP 4414992B2 JP 2006272779 A JP2006272779 A JP 2006272779A JP 2006272779 A JP2006272779 A JP 2006272779A JP 4414992 B2 JP4414992 B2 JP 4414992B2
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- silicon carbide
- epitaxial layer
- substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Farming Of Fish And Shellfish (AREA)
- Artificial Fish Reefs (AREA)
- Recrystallisation Techniques (AREA)
- Carbon And Carbon Compounds (AREA)
Description
基板に現れるマイクロパイプ、ピット、混入物、転位、積層欠陥などの欠陥は、通常、その基板上に成長するエピタキシャル構造を伝播して、特定の電力レベルでデバイスの劣化を引き起こす。さらに、理論的な説明が将来なされるであろうが、マイクロパイプの形成のメカニズムはいまだ完全に明らかになったわけではないので、こうしたメカニズムを抑制する方法は現状では満足できるものとは言えない。
V.A.Dmitriev, Silicon carbide and SiC-AlN solid-solution p-n structures grown by liquid-phase epitaxy, Physica B, 1993年, 185, pp. 440-452
本発明の上記および他の目的、利点および特徴ならびに実施方式は、好適な模範的な実施形態を示す添付図面に関連して本発明の以下に示す詳細な記載から一層容易に明らかになるであろう。
6Hと4Hポリタイプのホモエピタキシャル層(homoepitaxial layers)を、対応する炭化ケイ素ウェーハである基板の上に成長させる。これらのウェーハは直径30ミリメートルで、たとえば、前述の、Carterほかの米国特許第4866005号に示された技術である昇華技術により成長させられる。ブールから切り取られた後で、これらのウェーハは、機械的な処理により損傷された表面層を取り除くために磨かれエッチングされる。
Claims (4)
- バルク単結晶炭化ケイ素基板と、
前記炭化ケイ素基板の表面における炭化ケイ素エピタキシャル層と
を備え、特に電子工学的電力デバイスで使用される高品質の炭化ケイ素構造体において、
前記エピタキシャル層がX線ロッキングカーブにおいて25アーク秒以下の半値幅を示すことを特徴とする炭化ケイ素構造体であって、
前記バルク単結晶炭化ケイ素基板が、種晶添加昇華技術を用いて成長させて得られたものであり、
前記エピタキシャル層が、
前記バルク単結晶炭化ケイ素基板の上に炭化ケイ素の第一のエピタキシャル層を液相エピタキシー技術により形成する工程であって、前記基板から前記第一のエピタキシャル層の成長部の中に伝播したマイクロパイプ欠陥をふさいで該マイクロパイプ欠陥の複製を減らす厚みになるまで前記第一のエピタキシャル層を形成する工程と、
前記第一のエピタキシャル層の上に炭化ケイ素の第二のエピタキシャル層を化学蒸着により形成する工程とにより得られたものである炭化ケイ素構造体。 - 前記基板が、X線ロッキングカーブにおいて100アーク秒以下の半値幅を有する請求項1記載の炭化ケイ素構造体。
- 前記基板が6Hまたは4Hポリタイプのものであり、前記エピタキシャル層が前記基板と同じポリタイプを有する請求項1記載の炭化ケイ素構造体。
- 前記第二のエピタキシャル層が、前記第一のエピタキシャル層とは反対の導電性を有しており、前記2つのエピタキシャル層がpn接合を形成する請求項1記載の炭化ケイ素構造体。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/346,618 US5679153A (en) | 1994-11-30 | 1994-11-30 | Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51893396A Division JP4065021B2 (ja) | 1994-11-30 | 1995-11-22 | 炭化ケイ素のエピタキシー成長における、およびその結果形成される炭化ケイ素構造におけるマイクロパイプの形成を減少させる方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007091589A JP2007091589A (ja) | 2007-04-12 |
JP4414992B2 true JP4414992B2 (ja) | 2010-02-17 |
Family
ID=23360251
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51893396A Expired - Lifetime JP4065021B2 (ja) | 1994-11-30 | 1995-11-22 | 炭化ケイ素のエピタキシー成長における、およびその結果形成される炭化ケイ素構造におけるマイクロパイプの形成を減少させる方法 |
JP2006272779A Expired - Lifetime JP4414992B2 (ja) | 1994-11-30 | 2006-10-04 | 炭化ケイ素構造体 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51893396A Expired - Lifetime JP4065021B2 (ja) | 1994-11-30 | 1995-11-22 | 炭化ケイ素のエピタキシー成長における、およびその結果形成される炭化ケイ素構造におけるマイクロパイプの形成を減少させる方法 |
Country Status (11)
Country | Link |
---|---|
US (1) | US5679153A (ja) |
EP (1) | EP0795049B2 (ja) |
JP (2) | JP4065021B2 (ja) |
KR (1) | KR100420182B1 (ja) |
CN (1) | CN1069935C (ja) |
AT (1) | ATE180023T1 (ja) |
AU (1) | AU4369196A (ja) |
CA (1) | CA2205918C (ja) |
DE (1) | DE69509678T3 (ja) |
RU (1) | RU2142027C1 (ja) |
WO (1) | WO1996017112A1 (ja) |
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SU1726571A1 (ru) * | 1990-06-12 | 1992-04-15 | Физико-технический институт им.А.Ф.Иоффе АН СССР | Способ выращивани карбидкремниевых р-п-структур политипа 6Н |
JP2579561B2 (ja) * | 1991-03-22 | 1997-02-05 | 東海カーボン株式会社 | SiCウイスカーの製造装置 |
JP3214868B2 (ja) * | 1991-07-19 | 2001-10-02 | ローム株式会社 | ヘテロ接合バイポーラトランジスタの製造方法 |
DE4135076A1 (de) * | 1991-10-24 | 1993-04-29 | Daimler Benz Ag | Mehrschichtige, monokristallines siliziumkarbid enthaltende zusammensetzung |
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1994
- 1994-11-30 US US08/346,618 patent/US5679153A/en not_active Expired - Lifetime
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- 1995-11-22 CN CN95196526A patent/CN1069935C/zh not_active Expired - Lifetime
- 1995-11-22 AU AU43691/96A patent/AU4369196A/en not_active Abandoned
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Also Published As
Publication number | Publication date |
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JP2007091589A (ja) | 2007-04-12 |
CN1167511A (zh) | 1997-12-10 |
CN1069935C (zh) | 2001-08-22 |
ATE180023T1 (de) | 1999-05-15 |
EP0795049A1 (en) | 1997-09-17 |
WO1996017112A1 (en) | 1996-06-06 |
JPH10509943A (ja) | 1998-09-29 |
EP0795049B1 (en) | 1999-05-12 |
RU2142027C1 (ru) | 1999-11-27 |
DE69509678T3 (de) | 2008-02-28 |
CA2205918A1 (en) | 1996-06-06 |
KR100420182B1 (ko) | 2004-05-27 |
CA2205918C (en) | 2002-01-29 |
JP4065021B2 (ja) | 2008-03-19 |
DE69509678D1 (de) | 1999-06-17 |
AU4369196A (en) | 1996-06-19 |
DE69509678T2 (de) | 1999-12-02 |
EP0795049B2 (en) | 2007-09-12 |
US5679153A (en) | 1997-10-21 |
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