DE602004001802D1 - Vorrichtung und Verfahren zur Herstellung von Einkristallen durch Dampfphasenabscheidung - Google Patents

Vorrichtung und Verfahren zur Herstellung von Einkristallen durch Dampfphasenabscheidung

Info

Publication number
DE602004001802D1
DE602004001802D1 DE602004001802T DE602004001802T DE602004001802D1 DE 602004001802 D1 DE602004001802 D1 DE 602004001802D1 DE 602004001802 T DE602004001802 T DE 602004001802T DE 602004001802 T DE602004001802 T DE 602004001802T DE 602004001802 D1 DE602004001802 D1 DE 602004001802D1
Authority
DE
Germany
Prior art keywords
vapor deposition
crystals
single crystals
producing single
preparing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004001802T
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English (en)
Other versions
DE602004001802T3 (de
DE602004001802T2 (de
Inventor
Erik Janzen
Peter Raback
Alexandre Ellison
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Silicon Carbide AB
Original Assignee
Norstel AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority claimed from SE0301225A external-priority patent/SE524279C2/sv
Application filed by Norstel AB filed Critical Norstel AB
Publication of DE602004001802D1 publication Critical patent/DE602004001802D1/de
Application granted granted Critical
Publication of DE602004001802T2 publication Critical patent/DE602004001802T2/de
Publication of DE602004001802T3 publication Critical patent/DE602004001802T3/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
DE602004001802T 2003-04-24 2004-04-13 Vorrichtung und Verfahren zur Herstellung von Einkristallen durch Dampfphasenabscheidung Expired - Lifetime DE602004001802T3 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
SE0301225A SE524279C2 (sv) 2003-04-24 2003-04-24 Apparat och metod för tillverkning av monokristaller genom gasdeposition
SE0301225 2003-04-24
US46580003P 2003-04-28 2003-04-28
US465800P 2003-04-28
EP04008697A EP1471168B2 (de) 2003-04-24 2004-04-13 Vorrichtung und Verfahren zur Herstellung von Einkristallen durch Dampfphasenabscheidung

Publications (3)

Publication Number Publication Date
DE602004001802D1 true DE602004001802D1 (de) 2006-09-21
DE602004001802T2 DE602004001802T2 (de) 2007-10-11
DE602004001802T3 DE602004001802T3 (de) 2012-01-26

Family

ID=32965050

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004001802T Expired - Lifetime DE602004001802T3 (de) 2003-04-24 2004-04-13 Vorrichtung und Verfahren zur Herstellung von Einkristallen durch Dampfphasenabscheidung

Country Status (7)

Country Link
US (2) US7361222B2 (de)
EP (1) EP1471168B2 (de)
JP (1) JP5093974B2 (de)
CN (1) CN100414004C (de)
AT (1) ATE335872T1 (de)
DE (1) DE602004001802T3 (de)
IT (1) ITTO20040245A1 (de)

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CN111334860B (zh) * 2020-03-12 2022-05-27 江苏超芯星半导体有限公司 一种高质量碳化硅晶体的制备方法
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CN112144110B (zh) * 2020-09-23 2021-07-23 中电化合物半导体有限公司 Pvt法生长碳化硅晶体的生长方法
CN112160028B (zh) * 2020-09-28 2021-08-13 中电化合物半导体有限公司 一种可调节碳化硅单晶生长体系气氛的生长坩埚和方法
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CN114182341B (zh) * 2021-12-22 2022-10-18 季华实验室 一种高纯度晶体生长系统及方法
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CN116403882B (zh) * 2023-06-09 2023-08-08 雅安宇焜芯材材料科技有限公司 一种半导体制造系统及其提高半导体制造质量的方法
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JP3864696B2 (ja) 2000-11-10 2007-01-10 株式会社デンソー 炭化珪素単結晶の製造方法及び製造装置
JP3959952B2 (ja) * 2000-11-10 2007-08-15 株式会社デンソー 炭化珪素単結晶の製造方法及び製造装置
JP4742448B2 (ja) † 2001-06-06 2011-08-10 株式会社デンソー 炭化珪素単結晶の製造方法及び製造装置
ITMI20031196A1 (it) † 2003-06-13 2004-12-14 Lpe Spa Sistema per crescere cristalli di carburo di silicio

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ATE335872T1 (de) 2006-09-15
US20080149020A1 (en) 2008-06-26
DE602004001802T3 (de) 2012-01-26
EP1471168B1 (de) 2006-08-09
CN100414004C (zh) 2008-08-27
CN1570225A (zh) 2005-01-26
EP1471168B2 (de) 2011-08-10
EP1471168A1 (de) 2004-10-27
US7361222B2 (en) 2008-04-22
JP5093974B2 (ja) 2012-12-12
US20050000406A1 (en) 2005-01-06
DE602004001802T2 (de) 2007-10-11
ITTO20040245A1 (it) 2004-07-20

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