JP6903362B1 - 合成宝石用結晶体の製造方法 - Google Patents
合成宝石用結晶体の製造方法 Download PDFInfo
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- JP6903362B1 JP6903362B1 JP2021017259A JP2021017259A JP6903362B1 JP 6903362 B1 JP6903362 B1 JP 6903362B1 JP 2021017259 A JP2021017259 A JP 2021017259A JP 2021017259 A JP2021017259 A JP 2021017259A JP 6903362 B1 JP6903362 B1 JP 6903362B1
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- single crystal
- sic single
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- electron beam
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- 239000013078 crystal Substances 0.000 title claims abstract description 156
- 239000010437 gem Substances 0.000 title claims abstract description 31
- 229910001751 gemstone Inorganic materials 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title description 11
- 239000012535 impurity Substances 0.000 claims abstract description 68
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 60
- 230000031700 light absorption Effects 0.000 claims abstract description 28
- 239000011148 porous material Substances 0.000 claims abstract description 17
- 238000010894 electron beam technology Methods 0.000 claims description 57
- 230000001678 irradiating effect Effects 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000003786 synthesis reaction Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 abstract description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 122
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 113
- 230000007547 defect Effects 0.000 description 19
- 238000005259 measurement Methods 0.000 description 11
- 238000001773 deep-level transient spectroscopy Methods 0.000 description 8
- 125000004432 carbon atom Chemical group C* 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 238000004435 EPR spectroscopy Methods 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000411 transmission spectrum Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001362 electron spin resonance spectrum Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
10A 欠陥領域
Claims (5)
- n型不純物を含むSiC単結晶体を用意する工程と、
前記SiC単結晶体に電子線照射することにより、前記SiC単結晶体内に、炭素空孔を生成する工程と、
を含み、
前記電子線照射の照射エネルギー及び照射量は、前記炭素空孔の密度が、前記n型不純物の密度よりも多くなるように設定される、合成宝石用結晶体の製造方法。 - 前記炭素空孔が生成された前記SiC単結晶体は、波長460nmの光吸収係数が2cm−1以下である、請求項1に記載の合成宝石用結晶体の製造方法。
- 前記炭素空孔を生成する工程の後、前記SiC単結晶体を500℃〜1400℃の温度で熱処理する工程をさらに含む、請求項1または2に記載の合成宝石用結晶体の製造方法。
- 前記n型不純物の密度は、1×1018cm−3以上である、請求項1〜3の何れかに記載の合成宝石用結晶体の製造方法。
- 前記n型不純物は、前記SiC単結晶体に、1×1017cm−3〜5×1017cm−3の密度で、残留不純物として存在する、請求項1〜3の何れかに記載の合成宝石用結晶体の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2021017259A JP6903362B1 (ja) | 2021-02-05 | 2021-02-05 | 合成宝石用結晶体の製造方法 |
US17/535,787 US11725301B2 (en) | 2021-02-05 | 2021-11-26 | Method for manufacturing crystal for synthetic gem |
CN202111465301.8A CN114164498B (zh) | 2021-02-05 | 2021-12-03 | 合成宝石用结晶体的制造方法 |
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JP2021017259A JP6903362B1 (ja) | 2021-02-05 | 2021-02-05 | 合成宝石用結晶体の製造方法 |
Publications (2)
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JP6903362B1 true JP6903362B1 (ja) | 2021-07-14 |
JP2022120393A JP2022120393A (ja) | 2022-08-18 |
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JP2021017259A Active JP6903362B1 (ja) | 2021-02-05 | 2021-02-05 | 合成宝石用結晶体の製造方法 |
Country Status (3)
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US (1) | US11725301B2 (ja) |
JP (1) | JP6903362B1 (ja) |
CN (1) | CN114164498B (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11507906A (ja) * | 1995-08-31 | 1999-07-13 | シー3,インコーポレイティド | 炭化ケイ素宝石 |
JP2000503968A (ja) * | 1996-02-05 | 2000-04-04 | クリー リサーチ インコーポレイテッド | 無色炭化ケイ素結晶の成長 |
JP2001503726A (ja) * | 1996-11-15 | 2001-03-21 | シー3,インコーポレイティド | ダイアモンドコーティングを備えた炭化ケイ素からなる宝石用原石 |
JP2008053667A (ja) * | 2006-07-28 | 2008-03-06 | Central Res Inst Of Electric Power Ind | SiC結晶の質を向上させる方法およびSiC半導体素子 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7601441B2 (en) * | 2002-06-24 | 2009-10-13 | Cree, Inc. | One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
CN100467679C (zh) * | 2007-04-20 | 2009-03-11 | 山东大学 | 彩色碳硅石单晶及其制备方法与人造宝石的制备 |
-
2021
- 2021-02-05 JP JP2021017259A patent/JP6903362B1/ja active Active
- 2021-11-26 US US17/535,787 patent/US11725301B2/en active Active
- 2021-12-03 CN CN202111465301.8A patent/CN114164498B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11507906A (ja) * | 1995-08-31 | 1999-07-13 | シー3,インコーポレイティド | 炭化ケイ素宝石 |
JP2000503968A (ja) * | 1996-02-05 | 2000-04-04 | クリー リサーチ インコーポレイテッド | 無色炭化ケイ素結晶の成長 |
JP2001503726A (ja) * | 1996-11-15 | 2001-03-21 | シー3,インコーポレイティド | ダイアモンドコーティングを備えた炭化ケイ素からなる宝石用原石 |
JP2008053667A (ja) * | 2006-07-28 | 2008-03-06 | Central Res Inst Of Electric Power Ind | SiC結晶の質を向上させる方法およびSiC半導体素子 |
Also Published As
Publication number | Publication date |
---|---|
JP2022120393A (ja) | 2022-08-18 |
CN114164498B (zh) | 2022-05-27 |
CN114164498A (zh) | 2022-03-11 |
US20220251729A1 (en) | 2022-08-11 |
US11725301B2 (en) | 2023-08-15 |
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