JP2010539732A - 無極性および半極性の窒化物基板の面積を増加させる方法 - Google Patents

無極性および半極性の窒化物基板の面積を増加させる方法 Download PDF

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JP2010539732A
JP2010539732A JP2010526010A JP2010526010A JP2010539732A JP 2010539732 A JP2010539732 A JP 2010539732A JP 2010526010 A JP2010526010 A JP 2010526010A JP 2010526010 A JP2010526010 A JP 2010526010A JP 2010539732 A JP2010539732 A JP 2010539732A
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nitride
semipolar
nonpolar
substrate
gan
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JP2010539732A5 (enExample
Inventor
朝子 平井
ジェイムス エス． スペック，
スティーブン ピー． デンバース，
シュウジ ナカムラ，
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University of California
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University of California
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H10P14/2908—
    • H10P14/2926—
    • H10P14/3416—
    • H10P14/36—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP2010526010A 2007-09-19 2008-09-19 無極性および半極性の窒化物基板の面積を増加させる方法 Pending JP2010539732A (ja)

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Application Number Priority Date Filing Date Title
US97365607P 2007-09-19 2007-09-19
PCT/US2008/077072 WO2009039408A1 (en) 2007-09-19 2008-09-19 Method for increasing the area of non-polar and semi-polar nitride substrates

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JP2010539732A true JP2010539732A (ja) 2010-12-16
JP2010539732A5 JP2010539732A5 (enExample) 2012-11-01

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US (2) US8080469B2 (enExample)
JP (1) JP2010539732A (enExample)
KR (1) KR20100067114A (enExample)
WO (1) WO2009039408A1 (enExample)

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US9130119B2 (en) * 2006-12-11 2015-09-08 The Regents Of The University Of California Non-polar and semi-polar light emitting devices
JP5743127B2 (ja) * 2005-06-01 2015-07-01 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 半極性（Ｇａ，Ａｌ，Ｉｎ，Ｂ）Ｎ薄膜、ヘテロ構造およびデバイスの成長と作製のための方法及び装置
WO2008073385A1 (en) 2006-12-11 2008-06-19 The Regents Of The University Of California Metalorganic chemical vapor deposition (mocvd) growth of high performance non-polar iii-nitride optical devices
KR20100067114A (ko) * 2007-09-19 2010-06-18 더 리전츠 오브 더 유니버시티 오브 캘리포니아 비극성 및 반극성 질화물 기판들의 면적을 증가하기 위한 방법
KR101502195B1 (ko) * 2007-11-21 2015-03-12 미쓰비시 가가꾸 가부시키가이샤 질화물 반도체 및 질화물 반도체의 결정 성장 방법 그리고 질화물 반도체 발광 소자
JP5573225B2 (ja) * 2010-02-26 2014-08-20 三菱化学株式会社 第１３族金属窒化物結晶の製造方法、該製造方法により得られる第１３族金属窒化物結晶および半導体デバイスの製造方法
WO2011109754A1 (en) * 2010-03-04 2011-09-09 The Regents Of The University Of California Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/-15 degrees in the c-direction
JP2012136418A (ja) * 2010-12-01 2012-07-19 Mitsubishi Chemicals Corp Ｉｉｉ族窒化物半導体基板とその製造方法
JP5830973B2 (ja) * 2010-12-01 2015-12-09 三菱化学株式会社 ＧａＮ自立基板および半導体発光デバイスの製造方法

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JP2002029897A (ja) * 2000-07-10 2002-01-29 Sumitomo Electric Ind Ltd 単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
JP2003112999A (ja) * 2001-10-03 2003-04-18 Matsushita Electric Ind Co Ltd 半導体基板、半導体装置及びそれらの製造方法並びに結晶成長方法
JP2005522889A (ja) * 2002-04-15 2005-07-28 ザ リージェント オブ ザ ユニバーシティ オブ カリフォルニア 金属・有機化学気相成長によって成長した非極性ａ平面窒化ガリウム薄膜
JP2005320237A (ja) * 2004-05-07 2005-11-17 Samsung Corning Co Ltd 非極性ａ面窒化物半導体単結晶基板およびその製造方法
WO2006099138A2 (en) * 2005-03-10 2006-09-21 The Regents Of The University Of California Technique for the growth of planar semi-polar gallium nitride
WO2006130696A2 (en) * 2005-06-01 2006-12-07 The Regents Of The University Of California Technique for the growth and fabrication of semipolar (ga,al,in,b)n thin films, heterostructures, and devices
WO2007029655A1 (ja) * 2005-09-05 2007-03-15 Matsushita Electric Industrial Co., Ltd. 六方晶系窒化物単結晶の製造方法、六方晶系窒化物半導体結晶及び六方晶系窒化物単結晶ウエハの製造方法
WO2007084782A2 (en) * 2006-01-20 2007-07-26 The Regents Of The University Of California Method for improved growth of semipolar (al,in,ga,b)n
WO2007095137A2 (en) * 2006-02-10 2007-08-23 The Regents Of The University Of California Method for conductivity control of (al,in,ga,b)n
JP2007524983A (ja) * 2003-04-15 2007-08-30 ザ・レジェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア 非極性（Ａｌ、Ｂ、Ｉｎ、Ｇａ）Ｎ量子井戸

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US20010047751A1 (en) * 1998-11-24 2001-12-06 Andrew Y. Kim Method of producing device quality (a1) ingap alloys on lattice-mismatched substrates
JP3761418B2 (ja) * 2001-05-10 2006-03-29 Ｈｏｙａ株式会社 化合物結晶およびその製造法
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US7105865B2 (en) * 2001-09-19 2006-09-12 Sumitomo Electric Industries, Ltd. AlxInyGa1−x−yN mixture crystal substrate
US7118813B2 (en) * 2003-11-14 2006-10-10 Cree, Inc. Vicinal gallium nitride substrate for high quality homoepitaxy
US7432142B2 (en) * 2004-05-20 2008-10-07 Cree, Inc. Methods of fabricating nitride-based transistors having regrown ohmic contact regions
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WO2009035648A1 (en) * 2007-09-14 2009-03-19 Kyma Technologies, Inc. Non-polar and semi-polar gan substrates, devices, and methods for making them
KR20100067114A (ko) * 2007-09-19 2010-06-18 더 리전츠 오브 더 유니버시티 오브 캘리포니아 비극성 및 반극성 질화물 기판들의 면적을 증가하기 위한 방법

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002029897A (ja) * 2000-07-10 2002-01-29 Sumitomo Electric Ind Ltd 単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
JP2003112999A (ja) * 2001-10-03 2003-04-18 Matsushita Electric Ind Co Ltd 半導体基板、半導体装置及びそれらの製造方法並びに結晶成長方法
JP2005522889A (ja) * 2002-04-15 2005-07-28 ザ リージェント オブ ザ ユニバーシティ オブ カリフォルニア 金属・有機化学気相成長によって成長した非極性ａ平面窒化ガリウム薄膜
JP2007524983A (ja) * 2003-04-15 2007-08-30 ザ・レジェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア 非極性（Ａｌ、Ｂ、Ｉｎ、Ｇａ）Ｎ量子井戸
JP2005320237A (ja) * 2004-05-07 2005-11-17 Samsung Corning Co Ltd 非極性ａ面窒化物半導体単結晶基板およびその製造方法
WO2006099138A2 (en) * 2005-03-10 2006-09-21 The Regents Of The University Of California Technique for the growth of planar semi-polar gallium nitride
WO2006130696A2 (en) * 2005-06-01 2006-12-07 The Regents Of The University Of California Technique for the growth and fabrication of semipolar (ga,al,in,b)n thin films, heterostructures, and devices
JP2008543089A (ja) * 2005-06-01 2008-11-27 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 半極性（Ｇａ，Ａｌ，Ｉｎ，Ｂ）Ｎ薄膜、ヘテロ構造およびデバイスの成長と作製のための方法及び装置
WO2007029655A1 (ja) * 2005-09-05 2007-03-15 Matsushita Electric Industrial Co., Ltd. 六方晶系窒化物単結晶の製造方法、六方晶系窒化物半導体結晶及び六方晶系窒化物単結晶ウエハの製造方法
WO2007084782A2 (en) * 2006-01-20 2007-07-26 The Regents Of The University Of California Method for improved growth of semipolar (al,in,ga,b)n
WO2007095137A2 (en) * 2006-02-10 2007-08-23 The Regents Of The University Of California Method for conductivity control of (al,in,ga,b)n

Also Published As

Publication number Publication date
KR20100067114A (ko) 2010-06-18
US8080469B2 (en) 2011-12-20
US20120086106A1 (en) 2012-04-12
US8729671B2 (en) 2014-05-20
WO2009039408A1 (en) 2009-03-26
US20090072353A1 (en) 2009-03-19

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