JP5709122B2 - アモノサーマル法および窒化物結晶 - Google Patents

アモノサーマル法および窒化物結晶 Download PDF

Info

Publication number
JP5709122B2
JP5709122B2 JP2010033955A JP2010033955A JP5709122B2 JP 5709122 B2 JP5709122 B2 JP 5709122B2 JP 2010033955 A JP2010033955 A JP 2010033955A JP 2010033955 A JP2010033955 A JP 2010033955A JP 5709122 B2 JP5709122 B2 JP 5709122B2
Authority
JP
Japan
Prior art keywords
crystal
temperature
nitride
ammonothermal method
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010033955A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011032154A5 (enExample
JP2011032154A (ja
Inventor
豊 三川
豊 三川
真紀子 清見
真紀子 清見
徹 石黒
徹 石黒
勇二 鏡谷
勇二 鏡谷
千昭 横山
千昭 横山
大輔 冨田
大輔 冨田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
Mitsubishi Chemical Corp
Original Assignee
Tohoku University NUC
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku University NUC, Mitsubishi Chemical Corp filed Critical Tohoku University NUC
Priority to JP2010033955A priority Critical patent/JP5709122B2/ja
Publication of JP2011032154A publication Critical patent/JP2011032154A/ja
Publication of JP2011032154A5 publication Critical patent/JP2011032154A5/ja
Application granted granted Critical
Publication of JP5709122B2 publication Critical patent/JP5709122B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP2010033955A 2009-02-20 2010-02-18 アモノサーマル法および窒化物結晶 Active JP5709122B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010033955A JP5709122B2 (ja) 2009-02-20 2010-02-18 アモノサーマル法および窒化物結晶

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009037352 2009-02-20
JP2009037352 2009-02-20
JP2010033955A JP5709122B2 (ja) 2009-02-20 2010-02-18 アモノサーマル法および窒化物結晶

Publications (3)

Publication Number Publication Date
JP2011032154A JP2011032154A (ja) 2011-02-17
JP2011032154A5 JP2011032154A5 (enExample) 2013-04-04
JP5709122B2 true JP5709122B2 (ja) 2015-04-30

Family

ID=43761600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010033955A Active JP5709122B2 (ja) 2009-02-20 2010-02-18 アモノサーマル法および窒化物結晶

Country Status (1)

Country Link
JP (1) JP5709122B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6020440B2 (ja) * 2011-03-22 2016-11-02 三菱化学株式会社 窒化物結晶の製造方法
JP5953943B2 (ja) * 2011-05-31 2016-07-20 三菱化学株式会社 窒化物半導体結晶の製造方法、反応容器および部材
JP6074959B2 (ja) * 2011-09-08 2017-02-08 三菱化学株式会社 Ｉｉｉ族窒化物結晶及びその製造方法
WO2013062042A1 (ja) 2011-10-28 2013-05-02 三菱化学株式会社 窒化物結晶の製造方法および窒化物結晶
JP2014062023A (ja) * 2011-10-28 2014-04-10 Mitsubishi Chemicals Corp 窒化物結晶の製造方法
US9976229B2 (en) 2012-03-29 2018-05-22 Mitsubishi Chemical Corporation Method for producing nitride single crystal
JP6192956B2 (ja) * 2012-03-29 2017-09-06 国立大学法人東北大学 窒化物単結晶の製造方法
JP6024335B2 (ja) * 2012-09-21 2016-11-16 三菱化学株式会社 周期表第１３属金属窒化物半導体基板の製造方法
JP5929807B2 (ja) * 2013-03-26 2016-06-08 三菱化学株式会社 ＧａＮ多結晶およびそれを用いたＧａＮ単結晶の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4229624B2 (ja) * 2002-03-19 2009-02-25 三菱化学株式会社 窒化物単結晶の製造方法
US7063741B2 (en) * 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
WO2005121415A1 (en) * 2004-06-11 2005-12-22 Ammono Sp. Z O.O. Bulk mono-crystalline gallium-containing nitride and its application
JP2007169075A (ja) * 2005-12-19 2007-07-05 Nippon Kasei Chem Co Ltd 窒化物含有成型体及び単結晶窒化物の製造方法
JP5066639B2 (ja) * 2006-10-16 2012-11-07 三菱化学株式会社 窒化物半導体の製造方法、窒化物単結晶、ウエハ及びデバイス
EP2092093A4 (en) * 2006-10-25 2017-06-14 The Regents of The University of California Method for growing group iii-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group iii-nitride crystals grown thereby

Also Published As

Publication number Publication date
JP2011032154A (ja) 2011-02-17

Similar Documents

Publication Publication Date Title
JP5709122B2 (ja) アモノサーマル法および窒化物結晶
US8236267B2 (en) High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal
CN101522962A (zh) 氮化物半导体的制造方法、结晶生长速度增加剂、氮化物单晶、晶片及器件
JP6020440B2 (ja) 窒化物結晶の製造方法
JP5356933B2 (ja) 窒化物結晶の製造装置
WO2013062042A1 (ja) 窒化物結晶の製造方法および窒化物結晶
JP5888242B2 (ja) 半導体結晶の製造方法、結晶製造装置および第１３族窒化物半導体結晶
JP5454829B2 (ja) 超臨界溶媒を用いた結晶製造方法および結晶製造装置
WO2012176318A1 (ja) 窒化物単結晶の製造方法及びそれに用いるオートクレーブ
JP6493588B2 (ja) 窒化物結晶の製造方法
JP2007290921A (ja) 窒化物単結晶の製造方法、窒化物単結晶、およびデバイス
JP5454828B2 (ja) 超臨界溶媒を用いた結晶製造方法および結晶製造装置
JP2011153055A (ja) 窒化物単結晶の製造方法
JP2012171863A (ja) 窒化物結晶の製造方法および結晶製造装置
JP5929807B2 (ja) ＧａＮ多結晶およびそれを用いたＧａＮ単結晶の製造方法
JP5300062B2 (ja) 窒化物結晶の製造方法、窒化物結晶成長用原料の溶解輸送促進剤および窒化物結晶成長促進剤
JP2013075819A (ja) 窒化物結晶の製造方法
JP5747810B2 (ja) 窒化物結晶の製造方法および結晶製造装置
JP5454830B2 (ja) 超臨界溶媒を用いた結晶製造方法および結晶製造装置
JP6051768B2 (ja) 窒化物単結晶の製造方法
JP2013203652A (ja) 窒化物単結晶の製造方法
JP5751182B2 (ja) 窒化物結晶の製造方法、反応容器および結晶製造装置
JP2014144890A (ja) 窒化物単結晶の製造方法
JP2013203651A (ja) 窒化ガリウムの製造方法および多結晶窒化ガリウム
JPWO2012176318A1 (ja) 窒化物単結晶の製造方法及びそれに用いるオートクレーブ

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101210

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130215

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130215

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130312

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131016

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131022

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131224

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140415

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20141028

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141210

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150217

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150224

R150 Certificate of patent or registration of utility model

Ref document number: 5709122

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313115

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250