JP2013155108A5 - - Google Patents
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- JP2013155108A5 JP2013155108A5 JP2013085654A JP2013085654A JP2013155108A5 JP 2013155108 A5 JP2013155108 A5 JP 2013155108A5 JP 2013085654 A JP2013085654 A JP 2013085654A JP 2013085654 A JP2013085654 A JP 2013085654A JP 2013155108 A5 JP2013155108 A5 JP 2013155108A5
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- Prior art keywords
- growth
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- gan material
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- gan
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- 239000000463 material Substances 0.000 claims 33
- 238000000034 method Methods 0.000 claims 25
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 11
- 229910021529 ammonia Inorganic materials 0.000 claims 6
- 239000012535 impurity Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 6
- 239000013078 crystal Substances 0.000 claims 5
- 238000001947 vapour-phase growth Methods 0.000 claims 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 4
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims 4
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 238000007740 vapor deposition Methods 0.000 claims 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 230000007547 defect Effects 0.000 claims 2
- 238000000227 grinding Methods 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 claims 1
- 239000010432 diamond Substances 0.000 claims 1
- 229910003460 diamond Inorganic materials 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 230000008030 elimination Effects 0.000 claims 1
- 238000003379 elimination reaction Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000007730 finishing process Methods 0.000 claims 1
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims 1
- 238000011065 in-situ storage Methods 0.000 claims 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 claims 1
- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 claims 1
- 239000000395 magnesium oxide Substances 0.000 claims 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000011029 spinel Substances 0.000 claims 1
- 229910052596 spinel Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/712,351 US7323256B2 (en) | 2003-11-13 | 2003-11-13 | Large area, uniformly low dislocation density GaN substrate and process for making the same |
| US10/712,351 | 2003-11-13 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010118675A Division JP5394322B2 (ja) | 2003-11-13 | 2010-05-24 | 単結晶ｉｉｉ−ｖ族窒化物材料とその製造方法、物品およびウエハ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013155108A JP2013155108A (ja) | 2013-08-15 |
| JP2013155108A5 true JP2013155108A5 (enExample) | 2013-10-31 |
| JP5607781B2 JP5607781B2 (ja) | 2014-10-15 |
Family
ID=34573533
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006540022A Expired - Lifetime JP4741506B2 (ja) | 2003-11-13 | 2004-11-12 | 大面積で均一な低転位密度ＧａＮ基板およびその製造プロセス |
| JP2010118675A Expired - Lifetime JP5394322B2 (ja) | 2003-11-13 | 2010-05-24 | 単結晶ｉｉｉ−ｖ族窒化物材料とその製造方法、物品およびウエハ |
| JP2013085654A Expired - Lifetime JP5607781B2 (ja) | 2003-11-13 | 2013-04-16 | 大面積で均一な低転位密度ＧａＮ基板およびその製造プロセス |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006540022A Expired - Lifetime JP4741506B2 (ja) | 2003-11-13 | 2004-11-12 | 大面積で均一な低転位密度ＧａＮ基板およびその製造プロセス |
| JP2010118675A Expired - Lifetime JP5394322B2 (ja) | 2003-11-13 | 2010-05-24 | 単結晶ｉｉｉ−ｖ族窒化物材料とその製造方法、物品およびウエハ |
Country Status (10)
| Country | Link |
|---|---|
| US (4) | US7323256B2 (enExample) |
| EP (2) | EP1682701B1 (enExample) |
| JP (3) | JP4741506B2 (enExample) |
| KR (1) | KR101119728B1 (enExample) |
| CN (1) | CN100577894C (enExample) |
| AT (1) | ATE483834T1 (enExample) |
| CA (1) | CA2544878A1 (enExample) |
| DE (1) | DE602004029486D1 (enExample) |
| PL (1) | PL1682701T3 (enExample) |
| WO (1) | WO2005050709A2 (enExample) |
Families Citing this family (119)
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2007
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2010
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