JP2012231103A5 - - Google Patents

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Publication number
JP2012231103A5
JP2012231103A5 JP2011151709A JP2011151709A JP2012231103A5 JP 2012231103 A5 JP2012231103 A5 JP 2012231103A5 JP 2011151709 A JP2011151709 A JP 2011151709A JP 2011151709 A JP2011151709 A JP 2011151709A JP 2012231103 A5 JP2012231103 A5 JP 2012231103A5
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JP
Japan
Prior art keywords
gallium nitride
nitride crystal
ave
dislocation
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2011151709A
Other languages
English (en)
Japanese (ja)
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JP2012231103A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2011151709A priority Critical patent/JP2012231103A/ja
Priority claimed from JP2011151709A external-priority patent/JP2012231103A/ja
Priority to KR1020137026845A priority patent/KR101882541B1/ko
Priority to EP12771993.8A priority patent/EP2698456B1/en
Priority to PCT/JP2012/060187 priority patent/WO2012141317A1/ja
Priority to CN201280018140.0A priority patent/CN103502514A/zh
Publication of JP2012231103A publication Critical patent/JP2012231103A/ja
Priority to US14/054,036 priority patent/US9502241B2/en
Publication of JP2012231103A5 publication Critical patent/JP2012231103A5/ja
Withdrawn legal-status Critical Current

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JP2011151709A 2011-04-15 2011-07-08 Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶 Withdrawn JP2012231103A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2011151709A JP2012231103A (ja) 2011-04-15 2011-07-08 Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶
KR1020137026845A KR101882541B1 (ko) 2011-04-15 2012-04-13 Iii 족 질화물 결정의 제조 방법 및 iii 족 질화물 결정
EP12771993.8A EP2698456B1 (en) 2011-04-15 2012-04-13 Gallium nitride crystal
PCT/JP2012/060187 WO2012141317A1 (ja) 2011-04-15 2012-04-13 Iii族窒化物結晶の製造方法およびiii族窒化物結晶
CN201280018140.0A CN103502514A (zh) 2011-04-15 2012-04-13 Iii族氮化物结晶的制造方法和iii族氮化物结晶
US14/054,036 US9502241B2 (en) 2011-04-15 2013-10-15 Group III nitride crystal production method and group III nitride crystal

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011091586 2011-04-15
JP2011091586 2011-04-15
JP2011151709A JP2012231103A (ja) 2011-04-15 2011-07-08 Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016021509A Division JP6103089B2 (ja) 2011-04-15 2016-02-08 Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶

Publications (2)

Publication Number Publication Date
JP2012231103A JP2012231103A (ja) 2012-11-22
JP2012231103A5 true JP2012231103A5 (enExample) 2014-07-24

Family

ID=47009475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011151709A Withdrawn JP2012231103A (ja) 2011-04-15 2011-07-08 Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶

Country Status (6)

Country Link
US (1) US9502241B2 (enExample)
EP (1) EP2698456B1 (enExample)
JP (1) JP2012231103A (enExample)
KR (1) KR101882541B1 (enExample)
CN (1) CN103502514A (enExample)
WO (1) WO2012141317A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5748033B1 (ja) 2013-08-08 2015-07-15 三菱化学株式会社 自立ＧａＮ基板、ＧａＮ結晶、ＧａＮ単結晶の製造方法および半導体デバイスの製造方法
JP6477501B2 (ja) 2014-01-17 2019-03-06 三菱ケミカル株式会社 ＧａＮ基板、ＧａＮ基板の製造方法、ＧａＮ結晶の製造方法および半導体デバイスの製造方法
WO2015118920A1 (ja) * 2014-02-07 2015-08-13 日本碍子株式会社 複合基板、発光素子及びそれらの製造方法
CN107574479A (zh) * 2017-08-14 2018-01-12 南京大学 一种多功能氢化物气相外延生长系统及应用
JP6839694B2 (ja) * 2018-12-17 2021-03-10 株式会社デンソー 酸化ガリウム膜の成膜方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6180270B1 (en) * 1998-04-24 2001-01-30 The United States Of America As Represented By The Secretary Of The Army Low defect density gallium nitride epilayer and method of preparing the same
JP4618836B2 (ja) * 2000-01-04 2011-01-26 シャープ株式会社 窒化物系化合物半導体基板およびその製造方法
JP4932121B2 (ja) 2002-03-26 2012-05-16 日本電気株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板の製造方法
JP2003327497A (ja) 2002-05-13 2003-11-19 Sumitomo Electric Ind Ltd ＧａＮ単結晶基板、窒化物系半導体エピタキシャル基板、窒化物系半導体素子及びその製造方法
JP4943132B2 (ja) * 2005-12-28 2012-05-30 日本碍子株式会社 ＡｌＮ系ＩＩＩ族窒化物エピタキシャル膜の転位低減方法
JP4816277B2 (ja) * 2006-06-14 2011-11-16 日立電線株式会社 窒化物半導体自立基板及び窒化物半導体発光素子
JP4810517B2 (ja) * 2007-09-10 2011-11-09 日本電気株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板
WO2009047894A1 (ja) * 2007-10-09 2009-04-16 Panasonic Corporation Iii族窒化物結晶基板の製造方法、iii族窒化物結晶基板、iii族窒化物結晶基板を用いた半導体装置
JP5108641B2 (ja) * 2008-06-12 2012-12-26 住友電気工業株式会社 ＧａＮ単結晶基板、窒化物系半導体エピタキシャル基板、及び、窒化物系半導体素子
JP2011006304A (ja) * 2009-06-29 2011-01-13 Hitachi Cable Ltd 窒化物半導体基板およびその製造方法

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