JP2012231103A - Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶 - Google Patents

Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶 Download PDF

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Publication number
JP2012231103A
JP2012231103A JP2011151709A JP2011151709A JP2012231103A JP 2012231103 A JP2012231103 A JP 2012231103A JP 2011151709 A JP2011151709 A JP 2011151709A JP 2011151709 A JP2011151709 A JP 2011151709A JP 2012231103 A JP2012231103 A JP 2012231103A
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Prior art keywords
group iii
iii nitride
crystal
nitride crystal
plane
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JP2011151709A
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English (en)
Japanese (ja)
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JP2012231103A5 (enExample
Inventor
So Matsumoto
創 松本
Kunitada Suzaki
訓任 洲崎
Takeshi Fujito
健史 藤戸
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Mitsubishi Chemical Corp
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Mitsubishi Chemical Corp
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Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Priority to JP2011151709A priority Critical patent/JP2012231103A/ja
Priority to CN201280018140.0A priority patent/CN103502514A/zh
Priority to EP12771993.8A priority patent/EP2698456B1/en
Priority to PCT/JP2012/060187 priority patent/WO2012141317A1/ja
Priority to KR1020137026845A priority patent/KR101882541B1/ko
Publication of JP2012231103A publication Critical patent/JP2012231103A/ja
Priority to US14/054,036 priority patent/US9502241B2/en
Publication of JP2012231103A5 publication Critical patent/JP2012231103A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP2011151709A 2011-04-15 2011-07-08 Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶 Withdrawn JP2012231103A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2011151709A JP2012231103A (ja) 2011-04-15 2011-07-08 Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶
CN201280018140.0A CN103502514A (zh) 2011-04-15 2012-04-13 Iii族氮化物结晶的制造方法和iii族氮化物结晶
EP12771993.8A EP2698456B1 (en) 2011-04-15 2012-04-13 Gallium nitride crystal
PCT/JP2012/060187 WO2012141317A1 (ja) 2011-04-15 2012-04-13 Iii族窒化物結晶の製造方法およびiii族窒化物結晶
KR1020137026845A KR101882541B1 (ko) 2011-04-15 2012-04-13 Iii 족 질화물 결정의 제조 방법 및 iii 족 질화물 결정
US14/054,036 US9502241B2 (en) 2011-04-15 2013-10-15 Group III nitride crystal production method and group III nitride crystal

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011091586 2011-04-15
JP2011091586 2011-04-15
JP2011151709A JP2012231103A (ja) 2011-04-15 2011-07-08 Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶

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JP2016021509A Division JP6103089B2 (ja) 2011-04-15 2016-02-08 Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶

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JP2012231103A true JP2012231103A (ja) 2012-11-22
JP2012231103A5 JP2012231103A5 (enExample) 2014-07-24

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US (1) US9502241B2 (enExample)
EP (1) EP2698456B1 (enExample)
JP (1) JP2012231103A (enExample)
KR (1) KR101882541B1 (enExample)
CN (1) CN103502514A (enExample)
WO (1) WO2012141317A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
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WO2015020161A1 (ja) 2013-08-08 2015-02-12 三菱化学株式会社 自立ＧａＮ基板、ＧａＮ結晶、ＧａＮ単結晶の製造方法および半導体デバイスの製造方法
US10066319B2 (en) 2014-01-17 2018-09-04 Mitsubishi Chemical Corporation GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device
JP2020098818A (ja) * 2018-12-17 2020-06-25 トヨタ自動車株式会社 酸化ガリウム膜の成膜方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015118920A1 (ja) * 2014-02-07 2015-08-13 日本碍子株式会社 複合基板、発光素子及びそれらの製造方法
CN107574479A (zh) * 2017-08-14 2018-01-12 南京大学 一种多功能氢化物气相外延生长系统及应用

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JP2001192300A (ja) * 2000-01-04 2001-07-17 Sharp Corp 窒化物系化合物半導体基板およびその製造方法
JP2003277195A (ja) * 2002-03-26 2003-10-02 Nec Corp Ｉｉｉ−ｖ族窒化物系半導体基板およびその製造方法
JP2007331973A (ja) * 2006-06-14 2007-12-27 Hitachi Cable Ltd 窒化物半導体自立基板及び窒化物半導体発光素子
JP2008044842A (ja) * 2007-09-10 2008-02-28 Nec Corp Ｉｉｉ−ｖ族窒化物系半導体基板
JP2008060519A (ja) * 2005-12-28 2008-03-13 Ngk Insulators Ltd ＡｌＮ系ＩＩＩ族窒化物エピタキシャル膜の転位低減方法
JP2008303138A (ja) * 2008-06-12 2008-12-18 Sumitomo Electric Ind Ltd ＧａＮ単結晶基板、窒化物系半導体エピタキシャル基板、及び、窒化物系半導体素子
WO2009047894A1 (ja) * 2007-10-09 2009-04-16 Panasonic Corporation Iii族窒化物結晶基板の製造方法、iii族窒化物結晶基板、iii族窒化物結晶基板を用いた半導体装置
JP2011006304A (ja) * 2009-06-29 2011-01-13 Hitachi Cable Ltd 窒化物半導体基板およびその製造方法

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US6180270B1 (en) * 1998-04-24 2001-01-30 The United States Of America As Represented By The Secretary Of The Army Low defect density gallium nitride epilayer and method of preparing the same
JP2003327497A (ja) 2002-05-13 2003-11-19 Sumitomo Electric Ind Ltd ＧａＮ単結晶基板、窒化物系半導体エピタキシャル基板、窒化物系半導体素子及びその製造方法

Patent Citations (8)

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JP2001192300A (ja) * 2000-01-04 2001-07-17 Sharp Corp 窒化物系化合物半導体基板およびその製造方法
JP2003277195A (ja) * 2002-03-26 2003-10-02 Nec Corp Ｉｉｉ−ｖ族窒化物系半導体基板およびその製造方法
JP2008060519A (ja) * 2005-12-28 2008-03-13 Ngk Insulators Ltd ＡｌＮ系ＩＩＩ族窒化物エピタキシャル膜の転位低減方法
JP2007331973A (ja) * 2006-06-14 2007-12-27 Hitachi Cable Ltd 窒化物半導体自立基板及び窒化物半導体発光素子
JP2008044842A (ja) * 2007-09-10 2008-02-28 Nec Corp Ｉｉｉ−ｖ族窒化物系半導体基板
WO2009047894A1 (ja) * 2007-10-09 2009-04-16 Panasonic Corporation Iii族窒化物結晶基板の製造方法、iii族窒化物結晶基板、iii族窒化物結晶基板を用いた半導体装置
JP2008303138A (ja) * 2008-06-12 2008-12-18 Sumitomo Electric Ind Ltd ＧａＮ単結晶基板、窒化物系半導体エピタキシャル基板、及び、窒化物系半導体素子
JP2011006304A (ja) * 2009-06-29 2011-01-13 Hitachi Cable Ltd 窒化物半導体基板およびその製造方法

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Cited By (16)

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Publication number Priority date Publication date Assignee Title
TWI679320B (zh) * 2013-08-08 2019-12-11 日商三菱化學股份有限公司 自立ＧａＮ基板、ＧａＮ結晶、ＧａＮ單結晶之製造方法及半導體裝置之製造方法
KR102320083B1 (ko) 2013-08-08 2021-11-02 미쯔비시 케미컬 주식회사 자립 ＧａＮ 기판, ＧａＮ 결정, ＧａＮ 단결정의 제조 방법 및 반도체 디바이스의 제조 방법
KR20160040566A (ko) 2013-08-08 2016-04-14 미쓰비시 가가꾸 가부시키가이샤 자립 ＧａＮ 기판, ＧａＮ 결정, ＧａＮ 단결정의 제조 방법 및 반도체 디바이스의 제조 방법
EP3031958A4 (en) * 2013-08-08 2016-07-13 Mitsubishi Chem Corp GaN AUTOPORING SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN MONOCRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
EP3315639A1 (en) 2013-08-08 2018-05-02 Mitsubishi Chemical Corporation Self-standing gan substrate, gan crystal, method for producing gan single crystal, and method for producing semiconductor device
US12107129B2 (en) 2013-08-08 2024-10-01 Mitsubishi Chemical Corporation Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
JP2016013959A (ja) * 2013-08-08 2016-01-28 三菱化学株式会社 自立ＧａＮ基板、ＧａＮ結晶、ＧａＮ単結晶の製造方法および半導体デバイスの製造方法
TWI638071B (zh) * 2013-08-08 2018-10-11 三菱化學股份有限公司 自立ＧａＮ基板、ＧａＮ結晶、ＧａＮ單結晶之製造方法及半導體裝置之製造方法
WO2015020161A1 (ja) 2013-08-08 2015-02-12 三菱化学株式会社 自立ＧａＮ基板、ＧａＮ結晶、ＧａＮ単結晶の製造方法および半導体デバイスの製造方法
US10475887B2 (en) 2013-08-08 2019-11-12 Mitsubishi Chemical Corporation Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
US11664428B2 (en) 2013-08-08 2023-05-30 Mitsubishi Chemical Corporation Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
US11031475B2 (en) 2013-08-08 2021-06-08 Mitsubishi Chemical Corporation Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
US11038024B2 (en) 2013-08-08 2021-06-15 Mitsubishi Chemical Corporation Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
US10655244B2 (en) 2014-01-17 2020-05-19 Mitsubishi Chemical Corporation GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device
US10066319B2 (en) 2014-01-17 2018-09-04 Mitsubishi Chemical Corporation GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device
JP2020098818A (ja) * 2018-12-17 2020-06-25 トヨタ自動車株式会社 酸化ガリウム膜の成膜方法

Also Published As

Publication number Publication date
US20140035103A1 (en) 2014-02-06
EP2698456A1 (en) 2014-02-19
KR20140017598A (ko) 2014-02-11
KR101882541B1 (ko) 2018-07-26
EP2698456A4 (en) 2014-11-05
US9502241B2 (en) 2016-11-22
CN103502514A (zh) 2014-01-08
WO2012141317A1 (ja) 2012-10-18
EP2698456B1 (en) 2018-07-25

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