KR101882541B1 - Iii 족 질화물 결정의 제조 방법 및 iii 족 질화물 결정 - Google Patents

Iii 족 질화물 결정의 제조 방법 및 iii 족 질화물 결정 Download PDF

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KR101882541B1
KR101882541B1 KR1020137026845A KR20137026845A KR101882541B1 KR 101882541 B1 KR101882541 B1 KR 101882541B1 KR 1020137026845 A KR1020137026845 A KR 1020137026845A KR 20137026845 A KR20137026845 A KR 20137026845A KR 101882541 B1 KR101882541 B1 KR 101882541B1
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crystal
iii nitride
group iii
plane
ave
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KR20140017598A (ko
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하지메 마츠모토
구니타다 스자키
겐지 후지토
사토루 나가오
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미쯔비시 케미컬 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
KR1020137026845A 2011-04-15 2012-04-13 Iii 족 질화물 결정의 제조 방법 및 iii 족 질화물 결정 Active KR101882541B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011091586 2011-04-15
JPJP-P-2011-091586 2011-04-15
JP2011151709A JP2012231103A (ja) 2011-04-15 2011-07-08 Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶
JPJP-P-2011-151709 2011-07-08
PCT/JP2012/060187 WO2012141317A1 (ja) 2011-04-15 2012-04-13 Iii族窒化物結晶の製造方法およびiii族窒化物結晶

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KR20140017598A KR20140017598A (ko) 2014-02-11
KR101882541B1 true KR101882541B1 (ko) 2018-07-26

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US (1) US9502241B2 (enExample)
EP (1) EP2698456B1 (enExample)
JP (1) JP2012231103A (enExample)
KR (1) KR101882541B1 (enExample)
CN (1) CN103502514A (enExample)
WO (1) WO2012141317A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102320083B1 (ko) 2013-08-08 2021-11-02 미쯔비시 케미컬 주식회사 자립 ＧａＮ 기판, ＧａＮ 결정, ＧａＮ 단결정의 제조 방법 및 반도체 디바이스의 제조 방법
CN105917035B (zh) 2014-01-17 2019-06-18 三菱化学株式会社 GaN基板、GaN基板的制造方法、GaN结晶的制造方法和半导体器件的制造方法
WO2015118920A1 (ja) * 2014-02-07 2015-08-13 日本碍子株式会社 複合基板、発光素子及びそれらの製造方法
CN107574479A (zh) * 2017-08-14 2018-01-12 南京大学 一种多功能氢化物气相外延生长系统及应用
JP6839694B2 (ja) * 2018-12-17 2021-03-10 株式会社デンソー 酸化ガリウム膜の成膜方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008060519A (ja) * 2005-12-28 2008-03-13 Ngk Insulators Ltd ＡｌＮ系ＩＩＩ族窒化物エピタキシャル膜の転位低減方法
WO2009047894A1 (ja) 2007-10-09 2009-04-16 Panasonic Corporation Iii族窒化物結晶基板の製造方法、iii族窒化物結晶基板、iii族窒化物結晶基板を用いた半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6180270B1 (en) * 1998-04-24 2001-01-30 The United States Of America As Represented By The Secretary Of The Army Low defect density gallium nitride epilayer and method of preparing the same
JP4618836B2 (ja) * 2000-01-04 2011-01-26 シャープ株式会社 窒化物系化合物半導体基板およびその製造方法
JP4932121B2 (ja) * 2002-03-26 2012-05-16 日本電気株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板の製造方法
JP2003327497A (ja) 2002-05-13 2003-11-19 Sumitomo Electric Ind Ltd ＧａＮ単結晶基板、窒化物系半導体エピタキシャル基板、窒化物系半導体素子及びその製造方法
JP4816277B2 (ja) * 2006-06-14 2011-11-16 日立電線株式会社 窒化物半導体自立基板及び窒化物半導体発光素子
JP4810517B2 (ja) * 2007-09-10 2011-11-09 日本電気株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板
JP5108641B2 (ja) * 2008-06-12 2012-12-26 住友電気工業株式会社 ＧａＮ単結晶基板、窒化物系半導体エピタキシャル基板、及び、窒化物系半導体素子
JP2011006304A (ja) * 2009-06-29 2011-01-13 Hitachi Cable Ltd 窒化物半導体基板およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008060519A (ja) * 2005-12-28 2008-03-13 Ngk Insulators Ltd ＡｌＮ系ＩＩＩ族窒化物エピタキシャル膜の転位低減方法
WO2009047894A1 (ja) 2007-10-09 2009-04-16 Panasonic Corporation Iii族窒化物結晶基板の製造方法、iii族窒化物結晶基板、iii族窒化物結晶基板を用いた半導体装置

Also Published As

Publication number Publication date
US20140035103A1 (en) 2014-02-06
EP2698456A1 (en) 2014-02-19
KR20140017598A (ko) 2014-02-11
EP2698456A4 (en) 2014-11-05
US9502241B2 (en) 2016-11-22
CN103502514A (zh) 2014-01-08
WO2012141317A1 (ja) 2012-10-18
EP2698456B1 (en) 2018-07-25
JP2012231103A (ja) 2012-11-22

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