JP6839694B2 - 酸化ガリウム膜の成膜方法 - Google Patents
酸化ガリウム膜の成膜方法 Download PDFInfo
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- JP6839694B2 JP6839694B2 JP2018235359A JP2018235359A JP6839694B2 JP 6839694 B2 JP6839694 B2 JP 6839694B2 JP 2018235359 A JP2018235359 A JP 2018235359A JP 2018235359 A JP2018235359 A JP 2018235359A JP 6839694 B2 JP6839694 B2 JP 6839694B2
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- raw material
- material solution
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- gallium oxide
- gallium
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims description 43
- 229910001195 gallium oxide Inorganic materials 0.000 title claims description 43
- 238000000034 method Methods 0.000 title claims description 34
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000002994 raw material Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 46
- 239000003595 mist Substances 0.000 claims description 36
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 20
- 239000000460 chlorine Substances 0.000 claims description 19
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 18
- 229910052733 gallium Inorganic materials 0.000 claims description 17
- 229910052801 chlorine Inorganic materials 0.000 claims description 11
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 5
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 4
- 239000000243 solution Substances 0.000 description 51
- 239000007789 gas Substances 0.000 description 26
- 238000010790 dilution Methods 0.000 description 10
- 239000012895 dilution Substances 0.000 description 10
- 230000003746 surface roughness Effects 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- -1 gallium halide Chemical class 0.000 description 2
- DNUARHPNFXVKEI-UHFFFAOYSA-K gallium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[Ga+3] DNUARHPNFXVKEI-UHFFFAOYSA-K 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910021513 gallium hydroxide Inorganic materials 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/024—Group 12/16 materials
- H01L21/02403—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Description
12 :炉
13 :基板ステージ
14 :ヒータ
20 :ミスト供給装置
22 :容器
24 :超音波振動子
26 :ミスト供給路
28 :搬送ガス導入路
30 :希釈ガス導入路
60 :溶液
62 :ミスト
70 :基板
80 :排出管
Claims (3)
- 酸化ガリウム膜の成膜方法であって、
オキシ水酸化ガリウムを塩酸に溶かしてガリウム原子と塩素原子を含む原料溶液を生成する工程と、
前記原料溶液のミストを基体を加熱しながら前記基体の表面に供給することによって、前記基体の前記表面に前記酸化ガリウム膜を形成する工程を有し、
前記原料溶液中における塩素のモル濃度が前記原料溶液中におけるガリウムのモル濃度の3.0倍以上、かつ、4.5倍以下である、成膜方法。 - 前記原料溶液中における塩素のモル濃度が前記原料溶液中におけるガリウムのモル濃度の3.5倍以下である、請求項1の成膜方法。
- 前記基体が、β型酸化ガリウムにより構成されている、請求項1または2の成膜方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018235359A JP6839694B2 (ja) | 2018-12-17 | 2018-12-17 | 酸化ガリウム膜の成膜方法 |
DE102019130909.3A DE102019130909A1 (de) | 2018-12-17 | 2019-11-15 | Verfahren zur bildung einer galliumoxidschicht |
US16/697,273 US11515146B2 (en) | 2018-12-17 | 2019-11-27 | Method of forming gallium oxide film |
CN201911250102.8A CN111326417B (zh) | 2018-12-17 | 2019-12-09 | 氧化镓膜的成膜方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018235359A JP6839694B2 (ja) | 2018-12-17 | 2018-12-17 | 酸化ガリウム膜の成膜方法 |
Publications (2)
Publication Number | Publication Date |
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JP2020098818A JP2020098818A (ja) | 2020-06-25 |
JP6839694B2 true JP6839694B2 (ja) | 2021-03-10 |
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JP2018235359A Active JP6839694B2 (ja) | 2018-12-17 | 2018-12-17 | 酸化ガリウム膜の成膜方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11515146B2 (ja) |
JP (1) | JP6839694B2 (ja) |
CN (1) | CN111326417B (ja) |
DE (1) | DE102019130909A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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EP4174210A1 (en) * | 2020-06-29 | 2023-05-03 | Shin-Etsu Chemical Co., Ltd. | Production method for doping material solution for film formation, production method for layered product, doping material solution for film formation, and semiconductor film |
JP7011207B2 (ja) * | 2020-06-29 | 2022-01-26 | 信越化学工業株式会社 | 成膜用ドーピング原料溶液の製造方法、積層体の製造方法、成膜用ドーピング原料溶液及び半導体膜 |
JP2022093208A (ja) * | 2020-12-12 | 2022-06-23 | 高知県公立大学法人 | Ga2O3薄膜の製造方法 |
JP7200205B2 (ja) | 2020-12-15 | 2023-01-06 | 信越化学工業株式会社 | 成膜方法 |
JP7313530B2 (ja) | 2020-12-15 | 2023-07-24 | 信越化学工業株式会社 | 成膜方法 |
WO2023182311A1 (ja) * | 2022-03-25 | 2023-09-28 | 国立大学法人東海国立大学機構 | 酸化ガリウム膜とその製造装置および製造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2616157A1 (fr) * | 1987-06-02 | 1988-12-09 | Pechiney Aluminium | Procede d'extraction et de purification du gallium des liqueurs bayer |
JPH11157836A (ja) * | 1997-12-03 | 1999-06-15 | Central Glass Co Ltd | 高純度ガリウム化合物の製造方法 |
JP4505951B2 (ja) * | 2000-06-07 | 2010-07-21 | 東亞合成株式会社 | 高純度塩化第二鉄水溶液の製造方法 |
JP4938314B2 (ja) * | 2006-01-16 | 2012-05-23 | シャープ株式会社 | 光電変換装置および半導体接合素子の製造方法 |
JP5822198B2 (ja) * | 2009-06-05 | 2015-11-24 | Jx日鉱日石金属株式会社 | 酸化物焼結体、その製造方法及び酸化物焼結体製造用原料粉末 |
JP2011144080A (ja) * | 2010-01-15 | 2011-07-28 | Sumitomo Chemical Co Ltd | 酸化ガリウムの製造方法 |
JP2012231103A (ja) * | 2011-04-15 | 2012-11-22 | Mitsubishi Chemicals Corp | Iii族窒化物結晶の製造方法およびiii族窒化物結晶 |
JP5397794B1 (ja) * | 2013-06-04 | 2014-01-22 | Roca株式会社 | 酸化物結晶薄膜の製造方法 |
TWI534089B (zh) * | 2013-12-31 | 2016-05-21 | 財團法人工業技術研究院 | p型金屬氧化物半導體材料及其製造方法 |
CN108899359A (zh) * | 2014-07-22 | 2018-11-27 | Flosfia 株式会社 | 结晶性半导体膜和板状体以及半导体装置 |
JP6916426B2 (ja) | 2014-09-02 | 2021-08-11 | 株式会社Flosfia | 積層構造体およびその製造方法、半導体装置ならびに結晶膜 |
JP2016079485A (ja) * | 2014-10-20 | 2016-05-16 | 株式会社Flosfia | 成膜方法ならびに膜形成用ミストおよびその前駆体溶液 |
JP2015044740A (ja) * | 2014-11-07 | 2015-03-12 | Jx日鉱日石金属株式会社 | 酸化ガリウム粉末及びその製造方法並びに酸化物焼結体スパッタリングターゲット及びその製造方法 |
JP6586768B2 (ja) * | 2015-04-27 | 2019-10-09 | 株式会社Flosfia | 成膜方法 |
WO2018052097A1 (ja) * | 2016-09-15 | 2018-03-22 | 株式会社Flosfia | 半導体膜の製造方法及び半導体膜並びにドーピング用錯化合物及びドーピング方法 |
JP6793942B2 (ja) * | 2016-11-01 | 2020-12-02 | 国立大学法人 和歌山大学 | 酸化ガリウムの製造方法及び結晶成長装置 |
-
2018
- 2018-12-17 JP JP2018235359A patent/JP6839694B2/ja active Active
-
2019
- 2019-11-15 DE DE102019130909.3A patent/DE102019130909A1/de active Pending
- 2019-11-27 US US16/697,273 patent/US11515146B2/en active Active
- 2019-12-09 CN CN201911250102.8A patent/CN111326417B/zh active Active
Also Published As
Publication number | Publication date |
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US20200194256A1 (en) | 2020-06-18 |
CN111326417B (zh) | 2023-06-23 |
US11515146B2 (en) | 2022-11-29 |
CN111326417A (zh) | 2020-06-23 |
DE102019130909A1 (de) | 2020-06-18 |
JP2020098818A (ja) | 2020-06-25 |
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