JP4741506B2 - 大面積で均一な低転位密度GaN基板およびその製造プロセス - Google Patents
大面積で均一な低転位密度GaN基板およびその製造プロセス Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title abstract description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title description 229
- 230000012010 growth Effects 0.000 claims abstract description 357
- 239000000463 material Substances 0.000 claims abstract description 155
- 238000000034 method Methods 0.000 claims abstract description 133
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 230000008569 process Effects 0.000 claims abstract description 64
- 239000013078 crystal Substances 0.000 claims abstract description 46
- 238000011049 filling Methods 0.000 claims abstract description 42
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 32
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims abstract description 24
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 24
- 230000007547 defect Effects 0.000 claims abstract description 18
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 16
- 238000001947 vapour-phase growth Methods 0.000 claims abstract description 11
- 238000005498 polishing Methods 0.000 claims description 31
- 239000012535 impurity Substances 0.000 claims description 22
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 21
- 239000000126 substance Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 14
- 229910052594 sapphire Inorganic materials 0.000 claims description 13
- 239000010980 sapphire Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000007740 vapor deposition Methods 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 238000011065 in-situ storage Methods 0.000 claims description 4
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 claims description 3
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 3
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 claims description 3
- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims 2
- 230000008033 biological extinction Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 abstract description 37
- 230000005693 optoelectronics Effects 0.000 abstract description 12
- 238000004377 microelectronic Methods 0.000 abstract description 8
- 239000012071 phase Substances 0.000 abstract description 8
- 229910002601 GaN Inorganic materials 0.000 description 179
- 235000012431 wafers Nutrition 0.000 description 64
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 24
- 230000015572 biosynthetic process Effects 0.000 description 20
- 238000009826 distribution Methods 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 11
- 229910052733 gallium Inorganic materials 0.000 description 11
- 238000000879 optical micrograph Methods 0.000 description 9
- 239000012141 concentrate Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 238000000859 sublimation Methods 0.000 description 7
- 230000008022 sublimation Effects 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000000089 atomic force micrograph Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 230000003698 anagen phase Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 239000000370 acceptor Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000001739 density measurement Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000013400 design of experiment Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 238000009828 non-uniform distribution Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 1
- 235000015220 hamburgers Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- -1 lapping Chemical compound 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
- 229940095676 wafer product Drugs 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Description
本発明は、発光ダイオード、レーザダイオード、光電子センサ、光電子スイッチ、高電子移動度トランジスタなどのマイクロエレクトロニクスおよび光電子デバイスの製造に有用であるような、大面積で均一に低い転位密度の窒化ガリウム材料と、同様に、このような窒化ガリウム材料を製造する方法とに関する。
窒化ガリウム(GaN)および関連するIII−V族窒化物合金は、発光ダイオード(LED)およびレーザダイオード(LD)ならびにエレクトロニクスデバイスに用途がある。GaNベースのデバイスの性能は、デバイス層の結晶欠陥、特に貫通転位密度に強く依存する。青色およびUVレーザダイオードに関しては、3×106cm−2未満の転位密度が、より長い寿命のためには好ましい。さらに、ネイティブ窒化ガリウム基板上で成長されたGaNデバイスは、デバイス性能の改善ならびに設計および製作の単純化ために好ましい。
本発明は、大面積で均一な低転位密度窒化ガリウムおよびその製造プロセスに関する。
本発明は、均一な低転位密度で大面積の窒化ガリウム基板およびその製造方法に関する。
単一ウエハプロセス
本実施例において、サファイア基板上の2ステップGaN HVPE成長を実行した。成長の第1ステージでは、成長温度は1010℃、NH3/HCl比率は17、成長速度は約160μm/時、成長したフィルムの厚さは約320μmだった。
GaNインゴットプロセス
本実施例では、2ステップHVPE GaN成長プロセスを実行して、比較的長いGaNインゴットを成長させた。
Claims (45)
- 自身のフェースに2cm2を超える大面積を有し、前記フェースの成長表面積のcm2当たり3×106転位を超えず、5.5×10 5 転位以上であり、かつ、DDSDRが50%未満である均一な低転位密度を有し、
表面に沿って、より高い不純物濃度を有する複数の区別できる領域を含み、より高い不純物濃度を有する各々の区別できる領域は25μmを超える少なくとも1つの横寸法を有する、
単結晶GaN材料。 - 15cm2を超える大面積を有する、請求項1記載の材料。
- 表面は本質的にピットがない、請求項1又は2に記載の材料。
- より高い不純物濃度を有する各々の区別できる領域は50μmを超える少なくとも1つの横寸法を有する、請求項1〜3のいずれか一項に記載の材料。
- より高い不純物濃度を有する複数の区別できる領域は、成長表面積の少なくとも100領域/cm2を含む、請求項1〜4のいずれか一項に記載の材料。
- ドーパント種でドープされた、請求項1〜5のいずれか一項に記載の材料。
- 少なくとも0.1mmの厚さを有する、請求項1〜6のいずれか一項に記載の材料。
- 1×106cm-2を超えないADDを有する、請求項1〜7のいずれか一項に記載の材料。
- 25%未満のDDSDRを有する、請求項1〜8のいずれか一項に記載の材料。
- 2cmを超える直径と、少なくとも0.1mmの厚さと、1×106cm-2を超えず、5.5×10 5 cm -2 以上であるADDと、25%未満のDDSDRと、を有する大面積で均一な低転位密度単結晶GaN材料であって、
前記GaN材料は、表面に沿って、より高い不純物濃度を有する複数の区別できる領域を含み、より高い不純物濃度を有する各々の区別できる領域は25μmを超える少なくとも1つの横寸法を有する、GaN材料。 - 請求項1〜10のいずれか一項に記載の材料を含む物品。
- 前記材料がヘテロエピタキシャル基板上にある、請求項11記載の物品。
- 前記ヘテロエピタキシャル基板が、サファイア、炭化ケイ素、ガリウム砒素、シリコン、没食子酸リチウム、アルミン酸リチウム、没食子酸リチウムアルミニウム、酸化亜鉛、ダイヤモンド、スピネルおよび酸化マグネシウムからなる群から選択される材料を含む、請求項12に記載の物品。
- 少なくとも50μmの厚さを有する結晶形状である、請求項11〜13のいずれか一項に記載の物品。
- 前記表面の直径が少なくとも2インチである、請求項11〜14のいずれか一項に記載の物品。
- 2〜8インチの直径を有する、請求項1〜10のいずれか一項に記載の材料を含むウエハ。
- 長方形または正方形形状のフェースを有する請求項1〜10のいずれか一項に記載の材料を含むウエハであって、前記フェースの各側部のサイズが少なくとも15mmであるウエハ。
- 前記単結晶GaN材料における結晶面のc面と平行なフェースを有する、請求項16または17に記載のウエハ。
- 前記ウエハが、GaN材料の前記c面に対して角度をなして配置された表面を有し、前記角度が、0.1〜10度の範囲にある、請求項16又は17に記載のウエハ。
- 自身の少なくとも1つのフェースが鏡面仕上げに研磨された、請求項16〜19のいずれか一項に記載のウエハ。
- ラッピング、研磨および化学機械研磨の少なくとも1つを含むプロセスによって仕上げられた、請求項16〜20のいずれか一項に記載のウエハ。
- 少なくとも1つのエピタキシャル層を自身の上に有する、請求項16〜21のいずれか一項に記載のウエハ。
- 前記ウエハが、前記単結晶GaN材料のc面から11−20または10−10方向に0.2〜8度の範囲の角度でオフカットされた表面を含む、請求項16〜22のいずれか一項に記載の材料を含むウエハ。
- 請求項16〜23のいずれか一項に記載のウエハと、前記ウエハ上に製作されたエレクトロニクスデバイス構造と、を含むエレクトロニクスデバイス物品。
- 前記エレクトロニクスデバイス構造がレーザーダイオードを含む、請求項24に記載のエレクトロニクスデバイス物品。
- 前記エレクトロニクスデバイス構造が発光ダイオードを含む、請求項24に記載のエレクトロニクスデバイス物品。
- 2cm2を超え、成長表面積のcm2当たり3×106転位を超えず、5.5×10 5 転位以上であり、かつ、DDSDRが50%未満である大面積で均一な低転位密度単結晶GaN材料を基板上に形成するための気相成長法であって、(i)ピット化成長条件下で気相成長技術によって、前記GaN材料を前記基板に成長させて、各々が25μmを超える少なくとも1つの横寸法を有する複数のピットを形成する1つまたは複数のステップを含む第1段階と、(ii)前記GaN材料の成長表面においてピットのクロージャおよび欠陥の消滅を達成するピット充填条件下で、前記気相成長技術によって前記GaN材料を成長させる1つまたは複数のステップを含む第2段階と、を含む方法。
- 前記第1段階の成長が、前記GaN材料の前記成長表面の少なくとも50%にわたってピットを形成する、請求項27に記載の方法。
- 前記成長表面の前記ピット密度が、前記第1段階の成長の終わりに、前記成長表面において少なくとも100ピット/cm2である、請求項27または28に記載の方法。
- 前記第2段階の成長が、前記成長表面が本質的にピットのない表面になるまで継続される、請求項27〜29のいずれか一項に記載の方法。
- 気相成長技術がHVPE法を含む、請求項27〜30のいずれか一項に記載の方法。
- 前記第1段階の成長が、前記GaN材料の前記成長表面の少なくとも90%にわたりピットを形成する、請求項27〜31のいずれか一項に記載の方法。
- 前記第1段階の成長において前記成長表面に形成されたピットが、前記第1段階の成長の終わりに50μmを超える平均サイズを有する、請求項27〜32のいずれか一項に記載の方法。
- 前記第2段階の成長が、前記第1段階の成長条件で生成された前記ピットの充填をもたらす第1ステージの成長条件と、続いて、前記GaN材料のc面上に優先的な成長をもたらす第2ステージの成長条件とを含む、請求項27〜33のいずれか一項に記載の方法。
- 成長条件セット間の段階的な遷移を含む、請求項34に記載の方法。
- 前記第1段階の成長および前記第2段階の成長のいずれかがアンモニアフローを含み、前記第2段階の成長が、前記第1段階の成長よりも高い成長温度および/または低いアンモニア流量を含む、請求項27〜35のいずれか一項に記載の方法。
- 前記第1段階の成長および前記第2段階の成長のいずれもがアンモニアおよび塩化水素のいずれものフローを含み、前記第2段階の成長が、前記第1段階の成長よりも、塩化水素とアンモニアの比率が低い、請求項27〜35のいずれか一項に記載の方法。
- ドーパント種で前記GaN材料をドープすることをさらに含む、請求項27〜37のいずれか一項に記載の方法。
- 前記GaN材料が、15cm2を超える大面積を有する、請求項27〜38のいずれか一項に記載の方法。
- 前記第2段階の成長の終わりにおける前記GaN材料が、1×106cm-2を超えない転位密度を有する、請求項27〜39のいずれか一項に記載の方法。
- 前記GaN材料がヘテロエピタキシャル基板上で成長され、前記ヘテロエピタキシャル基板が、サファイア、炭化ケイ素、ガリウム砒素、シリコン、没食子酸リチウム、アルミン酸リチウム、没食子酸リチウムアルミニウム、酸化亜鉛、ダイヤモンド、スピネルおよび酸化マグネシウムからなる群から選択される材料を含む、請求項27〜40のいずれか一項に記載の方法。
- 前記GaN材料から前記ヘテロエピタキシャル基板を除去することをさらに含む、請求項41に記載の方法。
- 前記ヘテロエピタキシャル基板が、前記成長ステップの終わりにおける、成長温度である100℃内の温度での基板のインサイチュエッチングと、前記基板の機械研削と、前記基板の化学研削と、からなる群から選択される除去技術によって前記GaN材料から除去される、請求項42に記載の方法。
- 2cm 2 を超え、成長表面積のcm 2 当たり3×10 6 転位を超えず、5.5×10 5 転位以上であり、かつ、DDSDRが50%未満である大面積で均一な低転位密度単結晶GaN材料を基板上に形成するための気相成長法であって、(i)前記GaN材料の前記成長表面の少なくとも50%にわたってピットを形成するピット化成長条件下で、気相成長技術によって、前記GaN材料を前記基板に成長させる第1段階であって、前記成長表面上のピット密度が、前記第1段階の終わりに、前記成長表面において少なくとも100/cm2であり、各々のピットは25μmを超える少なくとも1つの横寸法を有する段階と、(ii)ピットを充填するピット充填条件下で前記GaN材料を成長させて、本質的にピットのない表面を生成する第2段階と、を含む方法。
- 請求項27〜44のいずれか一項に記載の方法に従って製作されるウエハであって、 表面に沿って、より高い不純物濃度を有する複数の区別できる領域を含み、より高い不純物濃度を有する各々の区別できる領域は25μmを超える少なくとも1つの横寸法を有するGaN材料を有するウエハ。
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Also Published As
Publication number | Publication date |
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EP2267190B1 (en) | 2015-08-12 |
JP2010215506A (ja) | 2010-09-30 |
US20080003786A1 (en) | 2008-01-03 |
US7879147B2 (en) | 2011-02-01 |
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ATE483834T1 (de) | 2010-10-15 |
US7323256B2 (en) | 2008-01-29 |
WO2005050709A2 (en) | 2005-06-02 |
US8728236B2 (en) | 2014-05-20 |
KR101119728B1 (ko) | 2012-03-23 |
CN100577894C (zh) | 2010-01-06 |
EP2267190A1 (en) | 2010-12-29 |
EP1682701B1 (en) | 2010-10-06 |
KR20070009976A (ko) | 2007-01-19 |
EP1682701A2 (en) | 2006-07-26 |
JP5607781B2 (ja) | 2014-10-15 |
US20050103257A1 (en) | 2005-05-19 |
US20110140122A1 (en) | 2011-06-16 |
CA2544878A1 (en) | 2005-06-02 |
WO2005050709A3 (en) | 2005-12-29 |
PL1682701T3 (pl) | 2011-05-31 |
CN1894446A (zh) | 2007-01-10 |
JP5394322B2 (ja) | 2014-01-22 |
US20080124510A1 (en) | 2008-05-29 |
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