WO2011111944A3 - 나노 와이어 제조 방법 및 나노 와이어를 갖는 전자 소자 - Google Patents

나노 와이어 제조 방법 및 나노 와이어를 갖는 전자 소자 Download PDF

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Publication number
WO2011111944A3
WO2011111944A3 PCT/KR2011/001423 KR2011001423W WO2011111944A3 WO 2011111944 A3 WO2011111944 A3 WO 2011111944A3 KR 2011001423 W KR2011001423 W KR 2011001423W WO 2011111944 A3 WO2011111944 A3 WO 2011111944A3
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WO
WIPO (PCT)
Prior art keywords
nanowire
electronic device
manufacturing
catalyst pattern
same
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Application number
PCT/KR2011/001423
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English (en)
French (fr)
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WO2011111944A2 (ko
Inventor
주상현
서미숙
Original Assignee
경기대학교 산학협력단
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Application filed by 경기대학교 산학협력단 filed Critical 경기대학교 산학협력단
Publication of WO2011111944A2 publication Critical patent/WO2011111944A2/ko
Publication of WO2011111944A3 publication Critical patent/WO2011111944A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Luminescent Compositions (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 제조 공정을 단순화시킬 수 있으며, 나노 와이어가 불필요한 위치에 형성되어 전기적인 단락을 발생시키는 문제를 방지할 수 있는 나노 와이어 제조 방법 및 나노 와이어를 갖는 전자 소자에 관한 것이다. 일례로, 기판 상에 촉매 패턴을 형성하는 촉매 패턴 형성 단계; 및 나노 물질을 상기 촉매 패턴에 증착시켜 상기 촉매 패턴으로부터 수평 방향 또는 수직 방향으로 성장시키는 나노 물질 성장 단계를 포함하는 나노 와이어 제조 방법이 개시된다.
PCT/KR2011/001423 2010-03-08 2011-03-02 나노 와이어 제조 방법 및 나노 와이어를 갖는 전자 소자 WO2011111944A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20100020203A KR101200150B1 (ko) 2010-03-08 2010-03-08 나노 와이어 제조 방법 및 나노 와이어를 갖는 전자 소자
KR10-2010-0020203 2010-03-08

Publications (2)

Publication Number Publication Date
WO2011111944A2 WO2011111944A2 (ko) 2011-09-15
WO2011111944A3 true WO2011111944A3 (ko) 2012-02-23

Family

ID=44563962

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/001423 WO2011111944A2 (ko) 2010-03-08 2011-03-02 나노 와이어 제조 방법 및 나노 와이어를 갖는 전자 소자

Country Status (2)

Country Link
KR (1) KR101200150B1 (ko)
WO (1) WO2011111944A2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101327262B1 (ko) * 2012-07-10 2013-11-08 한국에너지기술연구원 세라믹 지지체 표면에 산화금속 나노와이어를 합성하는 방법 및 이로부터 합성한 산화금속 나노와이어
US9112432B2 (en) 2012-12-14 2015-08-18 Samsung Electronics Co., Ltd. Piezoelectric generator and method of manufacturing the same
CN104701284B (zh) * 2013-12-05 2017-12-29 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法
KR102209689B1 (ko) 2015-09-10 2021-01-28 삼성전자주식회사 음향 모델 생성 장치 및 방법, 음성 인식 장치 및 방법
KR102395778B1 (ko) 2015-09-10 2022-05-09 삼성전자주식회사 나노구조체 형성방법과 이를 적용한 반도체소자의 제조방법 및 나노구조체를 포함하는 반도체소자
KR101760604B1 (ko) 2016-02-16 2017-07-31 조선대학교산학협력단 수평 배열 ito 나노와이어의 제조방법
KR102147276B1 (ko) * 2019-01-17 2020-08-24 연세대학교 산학협력단 Mems 플랫폼과 전기방사법을 이용한 현수형 나노와이어의 제조방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050176228A1 (en) * 2003-12-11 2005-08-11 Fonash Stephen J. Controlled nanowire growth in permanent, integrated nano-templates and methods of fabricating sensor and transducer structures
US20100029063A1 (en) * 2007-01-16 2010-02-04 Northrop Grumman Space & Mission Systems Corporation Carbon nanotube fabrication from crystallography oriented catalyst

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6515339B2 (en) 2000-07-18 2003-02-04 Lg Electronics Inc. Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
KR100699948B1 (ko) 2005-03-26 2007-03-26 재단법인서울대학교산학협력재단 나노 와이어 또는 나노 튜브의 선택적 성장을 위한 촉매물질 양자점 배열방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050176228A1 (en) * 2003-12-11 2005-08-11 Fonash Stephen J. Controlled nanowire growth in permanent, integrated nano-templates and methods of fabricating sensor and transducer structures
US20100029063A1 (en) * 2007-01-16 2010-02-04 Northrop Grumman Space & Mission Systems Corporation Carbon nanotube fabrication from crystallography oriented catalyst

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KHAKANI, MY ALI EL ET AL.: "Localized growth of suspended SWCNTs by means of an ''All-Laser'' process and their direct integration into nanoelectronic devices.", IEEE TRANSACTIONS ON NANOTECHNOLOGY., vol. 5, no. 3, May 2006 (2006-05-01), pages 237 - 242 *
SHAN, YINGHUI ET AL.: "Self-assembling silicon nanowires for device applications using the nanochannel-guided ''Grow-in-place'' approach.", ACS NANO., vol. 2, no. 3, 2008, pages 429 - 434 *

Also Published As

Publication number Publication date
KR101200150B1 (ko) 2012-11-12
WO2011111944A2 (ko) 2011-09-15
KR20110101287A (ko) 2011-09-16

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