JP2010245444A5 - - Google Patents

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Publication number
JP2010245444A5
JP2010245444A5 JP2009095113A JP2009095113A JP2010245444A5 JP 2010245444 A5 JP2010245444 A5 JP 2010245444A5 JP 2009095113 A JP2009095113 A JP 2009095113A JP 2009095113 A JP2009095113 A JP 2009095113A JP 2010245444 A5 JP2010245444 A5 JP 2010245444A5
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Japan
Prior art keywords
nitride semiconductor
light emitting
layer
manufacturing
substrate
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JP2009095113A
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English (en)
Japanese (ja)
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JP2010245444A (ja
JP5143076B2 (ja
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Publication of JP2010245444A5 publication Critical patent/JP2010245444A5/ja
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Publication of JP5143076B2 publication Critical patent/JP5143076B2/ja
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JP2009095113A 2009-04-09 2009-04-09 窒化物半導体発光素子の製造方法 Expired - Fee Related JP5143076B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009095113A JP5143076B2 (ja) 2009-04-09 2009-04-09 窒化物半導体発光素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009095113A JP5143076B2 (ja) 2009-04-09 2009-04-09 窒化物半導体発光素子の製造方法

Publications (3)

Publication Number Publication Date
JP2010245444A JP2010245444A (ja) 2010-10-28
JP2010245444A5 true JP2010245444A5 (enExample) 2011-12-01
JP5143076B2 JP5143076B2 (ja) 2013-02-13

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JP2009095113A Expired - Fee Related JP5143076B2 (ja) 2009-04-09 2009-04-09 窒化物半導体発光素子の製造方法

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JP (1) JP5143076B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013098232A (ja) * 2011-10-28 2013-05-20 Sharp Corp 窒化物半導体レーザ素子
JP2013128103A (ja) * 2011-11-17 2013-06-27 Sanken Electric Co Ltd 窒化物半導体装置及び窒化物半導体装置の製造方法
CN103460411A (zh) * 2012-03-05 2013-12-18 松下电器产业株式会社 氮化物半导体发光元件、光源及其制造方法
CN104641476B (zh) 2012-06-25 2017-09-05 首尔伟傲世有限公司 制备m面氮化物基发光二极管的方法
JP2014143255A (ja) * 2013-01-23 2014-08-07 Mitsubishi Chemicals Corp 窒化物系発光ダイオードの製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3864735B2 (ja) * 2000-12-28 2007-01-10 ソニー株式会社 半導体発光素子およびその製造方法
JP4388720B2 (ja) * 2001-10-12 2009-12-24 住友電気工業株式会社 半導体発光素子の製造方法
WO2003063215A1 (en) * 2002-01-21 2003-07-31 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor device manufacturing method
JP3951973B2 (ja) * 2003-06-27 2007-08-01 日亜化学工業株式会社 窒化物半導体素子
JP2007227652A (ja) * 2006-02-23 2007-09-06 Rohm Co Ltd ２波長半導体発光装置及びその製造方法
JP2008034659A (ja) * 2006-07-28 2008-02-14 Rohm Co Ltd 窒化物半導体
JP5366518B2 (ja) * 2007-12-28 2013-12-11 ローム株式会社 半導体発光素子およびその製造方法
WO2010051537A1 (en) * 2008-10-31 2010-05-06 The Regents Of The University Of California Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys

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