JP2019528225A5 - - Google Patents

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Publication number
JP2019528225A5
JP2019528225A5 JP2019505361A JP2019505361A JP2019528225A5 JP 2019528225 A5 JP2019528225 A5 JP 2019528225A5 JP 2019505361 A JP2019505361 A JP 2019505361A JP 2019505361 A JP2019505361 A JP 2019505361A JP 2019528225 A5 JP2019528225 A5 JP 2019528225A5
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JP
Japan
Prior art keywords
layer
additional layer
transferring
preparing
substrate
Prior art date
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Pending
Application number
JP2019505361A
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English (en)
Japanese (ja)
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JP2019528225A (ja
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Publication date
Priority claimed from US15/662,201 external-priority patent/US10186630B2/en
Application filed filed Critical
Publication of JP2019528225A publication Critical patent/JP2019528225A/ja
Publication of JP2019528225A5 publication Critical patent/JP2019528225A5/ja
Pending legal-status Critical Current

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JP2019505361A 2016-08-02 2017-07-31 気相または液相エピタキシーを使用したＧａＮ肥厚化用のシードウエハ Pending JP2019528225A (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201662370169P 2016-08-02 2016-08-02
US62/370,169 2016-08-02
US201662378126P 2016-08-22 2016-08-22
US62/378,126 2016-08-22
US15/662,201 2017-07-27
US15/662,201 US10186630B2 (en) 2016-08-02 2017-07-27 Seed wafer for GaN thickening using gas- or liquid-phase epitaxy
PCT/IB2017/054668 WO2018025166A1 (en) 2016-08-02 2017-07-31 Seed wafer for gan thickening using gas- or liquid-phase epitaxy

Publications (2)

Publication Number Publication Date
JP2019528225A JP2019528225A (ja) 2019-10-10
JP2019528225A5 true JP2019528225A5 (enExample) 2020-09-10

Family

ID=61069988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019505361A Pending JP2019528225A (ja) 2016-08-02 2017-07-31 気相または液相エピタキシーを使用したＧａＮ肥厚化用のシードウエハ

Country Status (6)

Country Link
US (2) US10186630B2 (enExample)
EP (1) EP3494248A1 (enExample)
JP (1) JP2019528225A (enExample)
KR (1) KR20190036538A (enExample)
CN (1) CN109790642A (enExample)
WO (1) WO2018025166A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180019169A1 (en) * 2016-07-12 2018-01-18 QMAT, Inc. Backing substrate stabilizing donor substrate for implant or reclamation
FR3063176A1 (fr) * 2017-02-17 2018-08-24 Soitec Masquage d'une zone au bord d'un substrat donneur lors d'une etape d'implantation ionique
US10020212B1 (en) 2017-10-09 2018-07-10 Oculus Vr, Llc Micro-LED pick and place using metallic gallium
US10510532B1 (en) * 2018-05-29 2019-12-17 Industry-University Cooperation Foundation Hanyang University Method for manufacturing gallium nitride substrate using the multi ion implantation
CN108878266B (zh) * 2018-07-03 2020-09-08 北京大学 一种在多晶或非晶衬底上生长单晶氮化镓薄膜的方法
CN111785609B (zh) * 2019-04-04 2023-06-23 世界先进积体电路股份有限公司 半导体结构及其制造方法
KR20220014873A (ko) 2019-05-30 2022-02-07 미쯔비시 케미컬 주식회사 GaN 기판 웨이퍼 및 그 제조 방법
EP3754731A1 (en) * 2019-06-21 2020-12-23 Aledia Method for local removal of semiconductor wires
US11011391B2 (en) * 2019-07-03 2021-05-18 Vanguard International Semiconductor Corporation Semiconductor structure and method for fabricating the same
CN110600435A (zh) * 2019-09-05 2019-12-20 方天琦 多层复合基板结构及其制备方法
JP2023539399A (ja) * 2020-03-20 2023-09-14 ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン 半導体デバイスの製造方法
TWI728846B (zh) 2020-06-19 2021-05-21 錼創顯示科技股份有限公司 發光半導體結構及發光半導體基板
CN111668353B (zh) * 2020-06-19 2021-12-17 錼创显示科技股份有限公司 发光半导体结构及半导体基板
WO2022222150A1 (zh) * 2021-04-23 2022-10-27 华为技术有限公司 一种hemt器件及其制作方法、电子设备
TWI785763B (zh) * 2021-08-27 2022-12-01 合晶科技股份有限公司 複合基板及其製造方法
CN114864380B (zh) * 2022-04-22 2025-02-21 江苏第三代半导体研究院有限公司 降低裂纹的外延方法及其外延片

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1988608A (en) 1934-04-18 1935-01-22 William A Ogg Zinc smelting
US6159824A (en) 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method
FR2835096B1 (fr) * 2002-01-22 2005-02-18 Procede de fabrication d'un substrat auto-porte en materiau semi-conducteur monocristallin
JP3749498B2 (ja) * 2002-03-26 2006-03-01 スタンレー電気株式会社 結晶成長用基板およびＺｎＯ系化合物半導体デバイス
FR2857983B1 (fr) * 2003-07-24 2005-09-02 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiee
CN100552888C (zh) * 2003-10-27 2009-10-21 住友电气工业株式会社 氮化镓半导体衬底及其制造方法
TW200707799A (en) * 2005-04-21 2007-02-16 Aonex Technologies Inc Bonded intermediate substrate and method of making same
DE102006004870A1 (de) * 2006-02-02 2007-08-16 Siltronic Ag Halbleiterschichtstruktur und Verfahren zur Herstellung einer Halbleiterschichtstruktur
US7863157B2 (en) 2006-03-17 2011-01-04 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
EP2002484A4 (en) 2006-04-05 2016-06-08 Silicon Genesis Corp METHOD AND STRUCTURE FOR MANUFACTURING PHOTOVOLTAIC CELLS USING A LAYER TRANSFER PROCESS
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US8124499B2 (en) 2006-11-06 2012-02-28 Silicon Genesis Corporation Method and structure for thick layer transfer using a linear accelerator
US20080128641A1 (en) 2006-11-08 2008-06-05 Silicon Genesis Corporation Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials
US7910458B2 (en) 2007-01-29 2011-03-22 Silicon Genesis Corporation Method and structure using selected implant angles using a linear accelerator process for manufacture of free standing films of materials
US20090278233A1 (en) * 2007-07-26 2009-11-12 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
US20090206275A1 (en) 2007-10-03 2009-08-20 Silcon Genesis Corporation Accelerator particle beam apparatus and method for low contaminate processing
JP5297219B2 (ja) * 2008-02-29 2013-09-25 信越化学工業株式会社 単結晶薄膜を有する基板の製造方法
JP5040977B2 (ja) * 2009-09-24 2012-10-03 住友電気工業株式会社 窒化物半導体基板、半導体装置およびそれらの製造方法
US9099526B2 (en) * 2010-02-16 2015-08-04 Monolithic 3D Inc. Integrated circuit device and structure
US20110254134A1 (en) * 2010-04-19 2011-10-20 Theeradetch Detchprohm Method of Group III Metal - Nitride Material Growth Using Metal Organic Vapor Phase Epitaxy
FI20115255A0 (fi) 2011-03-14 2011-03-14 Optogan Oy Yhdistelmäpuolijohdesubstraatti, puolijohdelaite, ja valmistusmenetelmä
US9269858B2 (en) 2011-08-31 2016-02-23 Micron Technology, Inc. Engineered substrates for semiconductor devices and associated systems and methods
US9257339B2 (en) * 2012-05-04 2016-02-09 Silicon Genesis Corporation Techniques for forming optoelectronic devices
US9466758B2 (en) * 2012-07-25 2016-10-11 Ananda H. Kumar Composite substrates of silicon and ceramic
US9082692B2 (en) 2013-01-02 2015-07-14 Micron Technology, Inc. Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices
CN103074672A (zh) * 2013-01-06 2013-05-01 向勇 一种单晶硅的气相外延生长方法
CN105051919A (zh) * 2013-01-16 2015-11-11 Qmat股份有限公司 用于形成光电器件的技术
US9574287B2 (en) * 2013-09-26 2017-02-21 Globalfoundries Inc. Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same
US9472518B2 (en) 2014-04-04 2016-10-18 Micron Technology, Inc. Semiconductor structures including carrier wafers and methods of using such semiconductor structures
US9716023B2 (en) 2014-07-15 2017-07-25 Micron Technology, Inc. Methods for temporarily bonding a device wafer to a carrier wafer, and related assemblies
US10262855B2 (en) * 2014-12-22 2019-04-16 Globalwafers Co., Ltd. Manufacture of Group IIIA-nitride layers on semiconductor on insulator structures
JP2018522426A (ja) 2015-06-19 2018-08-09 キューエムエイティ・インコーポレーテッド 接合剥離層転写プロセス

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