JP2019528225A5 - - Google Patents

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Publication number
JP2019528225A5
JP2019528225A5 JP2019505361A JP2019505361A JP2019528225A5 JP 2019528225 A5 JP2019528225 A5 JP 2019528225A5 JP 2019505361 A JP2019505361 A JP 2019505361A JP 2019505361 A JP2019505361 A JP 2019505361A JP 2019528225 A5 JP2019528225 A5 JP 2019528225A5
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JP
Japan
Prior art keywords
layer
additional layer
transferring
preparing
substrate
Prior art date
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Pending
Application number
JP2019505361A
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English (en)
Japanese (ja)
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JP2019528225A (ja
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Publication date
Priority claimed from US15/662,201 external-priority patent/US10186630B2/en
Application filed filed Critical
Publication of JP2019528225A publication Critical patent/JP2019528225A/ja
Publication of JP2019528225A5 publication Critical patent/JP2019528225A5/ja
Pending legal-status Critical Current

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JP2019505361A 2016-08-02 2017-07-31 気相または液相エピタキシーを使用したＧａＮ肥厚化用のシードウエハ Pending JP2019528225A (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201662370169P 2016-08-02 2016-08-02
US62/370,169 2016-08-02
US201662378126P 2016-08-22 2016-08-22
US62/378,126 2016-08-22
US15/662,201 2017-07-27
US15/662,201 US10186630B2 (en) 2016-08-02 2017-07-27 Seed wafer for GaN thickening using gas- or liquid-phase epitaxy
PCT/IB2017/054668 WO2018025166A1 (en) 2016-08-02 2017-07-31 Seed wafer for gan thickening using gas- or liquid-phase epitaxy

Publications (2)

Publication Number Publication Date
JP2019528225A JP2019528225A (ja) 2019-10-10
JP2019528225A5 true JP2019528225A5 (enExample) 2020-09-10

Family

ID=61069988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019505361A Pending JP2019528225A (ja) 2016-08-02 2017-07-31 気相または液相エピタキシーを使用したＧａＮ肥厚化用のシードウエハ

Country Status (6)

Country Link
US (2) US10186630B2 (enExample)
EP (1) EP3494248A1 (enExample)
JP (1) JP2019528225A (enExample)
KR (1) KR20190036538A (enExample)
CN (1) CN109790642A (enExample)
WO (1) WO2018025166A1 (enExample)

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FR3063176A1 (fr) * 2017-02-17 2018-08-24 Soitec Masquage d'une zone au bord d'un substrat donneur lors d'une etape d'implantation ionique
US10020212B1 (en) * 2017-10-09 2018-07-10 Oculus Vr, Llc Micro-LED pick and place using metallic gallium
US10510532B1 (en) * 2018-05-29 2019-12-17 Industry-University Cooperation Foundation Hanyang University Method for manufacturing gallium nitride substrate using the multi ion implantation
CN108878266B (zh) * 2018-07-03 2020-09-08 北京大学 一种在多晶或非晶衬底上生长单晶氮化镓薄膜的方法
CN111785609B (zh) * 2019-04-04 2023-06-23 世界先进积体电路股份有限公司 半导体结构及其制造方法
JP7567786B2 (ja) 2019-05-30 2024-10-16 三菱ケミカル株式会社 ＧａＮ基板ウエハおよびその製造方法
EP3754731A1 (en) * 2019-06-21 2020-12-23 Aledia Method for local removal of semiconductor wires
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CN110600435A (zh) * 2019-09-05 2019-12-20 方天琦 多层复合基板结构及其制备方法
JP2023539399A (ja) * 2020-03-20 2023-09-14 ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン 半導体デバイスの製造方法
CN111668353B (zh) * 2020-06-19 2021-12-17 錼创显示科技股份有限公司 发光半导体结构及半导体基板
TWI728846B (zh) 2020-06-19 2021-05-21 錼創顯示科技股份有限公司 發光半導體結構及發光半導體基板
CN116802790A (zh) * 2021-04-23 2023-09-22 华为技术有限公司 一种hemt器件及其制作方法、电子设备
TWI785763B (zh) * 2021-08-27 2022-12-01 合晶科技股份有限公司 複合基板及其製造方法
CN114864380B (zh) * 2022-04-22 2025-02-21 江苏第三代半导体研究院有限公司 降低裂纹的外延方法及其外延片

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