JP2018531323A5 - - Google Patents

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Publication number
JP2018531323A5
JP2018531323A5 JP2018516838A JP2018516838A JP2018531323A5 JP 2018531323 A5 JP2018531323 A5 JP 2018531323A5 JP 2018516838 A JP2018516838 A JP 2018516838A JP 2018516838 A JP2018516838 A JP 2018516838A JP 2018531323 A5 JP2018531323 A5 JP 2018531323A5
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JP
Japan
Prior art keywords
susceptor
thickness
edge
configuration
reducing
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JP2018516838A
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English (en)
Japanese (ja)
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JP2018531323A6 (ja
JP2018531323A (ja
JP6875386B2 (ja
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Priority claimed from PCT/US2016/054507 external-priority patent/WO2017059114A1/en
Publication of JP2018531323A publication Critical patent/JP2018531323A/ja
Publication of JP2018531323A6 publication Critical patent/JP2018531323A6/ja
Publication of JP2018531323A5 publication Critical patent/JP2018531323A5/ja
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Publication of JP6875386B2 publication Critical patent/JP6875386B2/ja
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JP2018516838A 2015-10-01 2016-09-29 Ｃｖｄ装置 Active JP6875386B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562235826P 2015-10-01 2015-10-01
US62/235,826 2015-10-01
PCT/US2016/054507 WO2017059114A1 (en) 2015-10-01 2016-09-29 Cvd apparatus

Publications (4)

Publication Number Publication Date
JP2018531323A JP2018531323A (ja) 2018-10-25
JP2018531323A6 JP2018531323A6 (ja) 2018-12-13
JP2018531323A5 true JP2018531323A5 (enExample) 2019-11-07
JP6875386B2 JP6875386B2 (ja) 2021-05-26

Family

ID=57178489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018516838A Active JP6875386B2 (ja) 2015-10-01 2016-09-29 Ｃｖｄ装置

Country Status (6)

Country Link
US (1) US11598021B2 (enExample)
EP (1) EP3356573B1 (enExample)
JP (1) JP6875386B2 (enExample)
CN (1) CN108603290B (enExample)
TW (1) TWI694169B (enExample)
WO (1) WO2017059114A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12252806B2 (en) * 2020-12-31 2025-03-18 Globalwafers Co., Ltd Systems and methods for a preheat ring in a semiconductor wafer reactor
US11515196B1 (en) 2021-05-13 2022-11-29 Globalwafers Co., Ltd. Methods for etching a semiconductor structure and for conditioning a processing reactor
WO2022240726A1 (en) 2021-05-13 2022-11-17 Globalwafers Co., Ltd. Methods for etching a semiconductor structure and for conditioning a processing reactor
US11495487B1 (en) 2021-05-13 2022-11-08 Globalwafers Co., Ltd. Methods for conditioning a processing reactor
CN113981531B (zh) * 2021-10-26 2022-10-04 江苏天芯微半导体设备有限公司 一种预热环及衬底处理设备
US20250259864A1 (en) * 2024-02-12 2025-08-14 Agnitron Technology, Inc. Rapid thermal cycling annealing apparatus

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06132231A (ja) * 1992-10-20 1994-05-13 Hitachi Ltd Ｃｖｄ装置
EP0606751B1 (en) * 1993-01-13 2002-03-06 Applied Materials, Inc. Method for depositing polysilicon films having improved uniformity and apparatus therefor
JPH1060624A (ja) * 1996-08-20 1998-03-03 Matsushita Electric Ind Co Ltd スパッタリング装置
US6364957B1 (en) * 1997-10-09 2002-04-02 Applied Materials, Inc. Support assembly with thermal expansion compensation
US6170433B1 (en) * 1998-07-23 2001-01-09 Applied Materials, Inc. Method and apparatus for processing a wafer
US6896738B2 (en) * 2001-10-30 2005-05-24 Cree, Inc. Induction heating devices and methods for controllably heating an article
JP2003142408A (ja) * 2001-10-31 2003-05-16 Shin Etsu Handotai Co Ltd 枚葉式熱処理装置および熱処理方法
JP3758579B2 (ja) 2002-01-23 2006-03-22 信越半導体株式会社 熱処理装置および熱処理方法
JP2004134625A (ja) 2002-10-11 2004-04-30 Toshiba Corp 半導体装置の製造方法と製造装置
FR2846786B1 (fr) * 2002-11-05 2005-06-17 Procede de recuit thermique rapide de tranches a couronne
US7311784B2 (en) * 2002-11-26 2007-12-25 Tokyo Electron Limited Plasma processing device
US9890455B2 (en) * 2010-10-29 2018-02-13 Applied Materials, Inc. Pre-heat ring designs to increase deposition uniformity and substrate throughput
DE102011007632B3 (de) * 2011-04-18 2012-02-16 Siltronic Ag Verfahren und Vorrichtung zum Abscheiden einer von Prozessgas stammenden Materialschicht auf einer Substratscheibe
US9117670B2 (en) * 2013-03-14 2015-08-25 Sunedison Semiconductor Limited (Uen201334164H) Inject insert liner assemblies for chemical vapor deposition systems and methods of using same
US10047457B2 (en) 2013-09-16 2018-08-14 Applied Materials, Inc. EPI pre-heat ring
US20150083046A1 (en) * 2013-09-26 2015-03-26 Applied Materials, Inc. Carbon fiber ring susceptor
KR101539298B1 (ko) * 2013-11-25 2015-07-29 주식회사 엘지실트론 에피택셜 웨이퍼 성장 장치
WO2015084487A1 (en) * 2013-12-06 2015-06-11 Applied Materials, Inc. Apparatus for self centering preheat member

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