JP2016536778A5 - - Google Patents

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Publication number
JP2016536778A5
JP2016536778A5 JP2016516551A JP2016516551A JP2016536778A5 JP 2016536778 A5 JP2016536778 A5 JP 2016536778A5 JP 2016516551 A JP2016516551 A JP 2016516551A JP 2016516551 A JP2016516551 A JP 2016516551A JP 2016536778 A5 JP2016536778 A5 JP 2016536778A5
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JP
Japan
Prior art keywords
semiconductor material
semiconductor
semiconductor device
layer disposed
oxide layer
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Application number
JP2016516551A
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English (en)
Japanese (ja)
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JP2016536778A (ja
JP6594296B2 (ja
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Priority claimed from US14/043,431 external-priority patent/US9202935B2/en
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Publication of JP2016536778A publication Critical patent/JP2016536778A/ja
Publication of JP2016536778A5 publication Critical patent/JP2016536778A5/ja
Application granted granted Critical
Publication of JP6594296B2 publication Critical patent/JP6594296B2/ja
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JP2016516551A 2013-10-01 2014-09-26 改善された逆サージ能力及び削減されたリーク電流のポリシリコン層を有するツェナーダイオード Active JP6594296B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/043,431 US9202935B2 (en) 2013-10-01 2013-10-01 Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current
US14/043,431 2013-10-01
PCT/US2014/057577 WO2015050776A1 (en) 2013-10-01 2014-09-26 Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage current

Publications (3)

Publication Number Publication Date
JP2016536778A JP2016536778A (ja) 2016-11-24
JP2016536778A5 true JP2016536778A5 (enExample) 2017-11-02
JP6594296B2 JP6594296B2 (ja) 2019-10-23

Family

ID=52739291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016516551A Active JP6594296B2 (ja) 2013-10-01 2014-09-26 改善された逆サージ能力及び削減されたリーク電流のポリシリコン層を有するツェナーダイオード

Country Status (7)

Country Link
US (3) US9202935B2 (enExample)
EP (1) EP3053198A4 (enExample)
JP (1) JP6594296B2 (enExample)
KR (1) KR101800331B1 (enExample)
CN (1) CN105556679A (enExample)
TW (1) TWI648770B (enExample)
WO (1) WO2015050776A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9202935B2 (en) * 2013-10-01 2015-12-01 Vishay General Semiconductor Llc Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current
US10355144B1 (en) 2018-07-23 2019-07-16 Amazing Microelectronic Corp. Heat-dissipating Zener diode
US12501632B2 (en) 2022-12-15 2025-12-16 Nxp B.V. Semiconductor device with improved mechanical stress resistance

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2317767A2 (fr) * 1975-07-10 1977-02-04 Silec Semi Conducteurs Applications d'un procede de diffusion profonde d'impuretes dans un substrat
JPS5950113B2 (ja) * 1975-11-05 1984-12-06 株式会社東芝 半導体装置
JPS60136270A (ja) * 1983-12-24 1985-07-19 Toshiba Corp 半導体装置の製造方法
JPH0691267B2 (ja) * 1984-06-06 1994-11-14 ローム株式会社 半導体装置の製造方法
US4775643A (en) 1987-06-01 1988-10-04 Motorola Inc. Mesa zener diode and method of manufacture thereof
JPS6481265A (en) * 1987-09-22 1989-03-27 Fujitsu Ltd Schottky barrier diode device
US4945070A (en) * 1989-01-24 1990-07-31 Harris Corporation Method of making cmos with shallow source and drain junctions
JP2527630Y2 (ja) * 1991-03-05 1997-03-05 新電元工業株式会社 半導体装置
JPH05110005A (ja) * 1991-10-16 1993-04-30 N M B Semiconductor:Kk Ｍｏｓ型トランジスタ半導体装置およびその製造方法
JPH0864843A (ja) 1994-08-26 1996-03-08 Rohm Co Ltd ツェナーダイオードの製造方法
JP2666743B2 (ja) 1994-11-22 1997-10-22 日本電気株式会社 定電圧ダイオード
JPH0945912A (ja) * 1995-07-31 1997-02-14 Nec Corp 半導体装置およびその製造方法
US5710054A (en) * 1996-08-26 1998-01-20 Advanced Micro Devices, Inc. Method of forming a shallow junction by diffusion from a silicon-based spacer
US6791161B2 (en) 2002-04-08 2004-09-14 Fabtech, Inc. Precision Zener diodes
US7012276B2 (en) 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
US7582537B2 (en) 2004-12-15 2009-09-01 Lg Electronics Inc. Zener diode and methods for fabricating and packaging same
JP2006179518A (ja) * 2004-12-20 2006-07-06 Steady Design Ltd ツェナーダイオードの製造方法
US7781826B2 (en) * 2006-11-16 2010-08-24 Alpha & Omega Semiconductor, Ltd. Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter
US7511357B2 (en) * 2007-04-20 2009-03-31 Force-Mos Technology Corporation Trenched MOSFETs with improved gate-drain (GD) clamp diodes
KR20090015719A (ko) 2007-08-09 2009-02-12 주식회사 하이닉스반도체 상변화 메모리 장치의 ｐｎ 다이오드 및 그 제조방법
JP2010199165A (ja) * 2009-02-24 2010-09-09 Panasonic Corp 半導体装置とその製造方法
US8101993B2 (en) 2009-03-18 2012-01-24 Force Mos Technology Co., Ltd. MSD integrated circuits with shallow trench
US8415765B2 (en) * 2009-03-31 2013-04-09 Panasonic Corporation Semiconductor device including a guard ring or an inverted region
EP2317767A1 (en) 2009-10-27 2011-05-04 Nagravision S.A. Method for accessing services by a user unit
US8198703B2 (en) 2010-01-18 2012-06-12 Freescale Semiconductor, Inc. Zener diode with reduced substrate current
JP2012174894A (ja) 2011-02-22 2012-09-10 Renesas Electronics Corp ツェナーダイオード、半導体装置及びそれらの製造方法
US9202935B2 (en) * 2013-10-01 2015-12-01 Vishay General Semiconductor Llc Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current

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