CN105556679A - 具有更高反向浪涌能力和更小漏电流的含多晶硅层齐纳二极管 - Google Patents

具有更高反向浪涌能力和更小漏电流的含多晶硅层齐纳二极管 Download PDF

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Publication number
CN105556679A
CN105556679A CN201480051532.6A CN201480051532A CN105556679A CN 105556679 A CN105556679 A CN 105556679A CN 201480051532 A CN201480051532 A CN 201480051532A CN 105556679 A CN105556679 A CN 105556679A
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CN
China
Prior art keywords
layer
semiconductor
substrate
polysilicon
zener diode
Prior art date
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Pending
Application number
CN201480051532.6A
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English (en)
Chinese (zh)
Inventor
陈世冠
江挽澜
林意茵
蒋铭泰
彭智平
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Vishay General Semiconductor LLC
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Vishay General Semiconductor LLC
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Publication of CN105556679A publication Critical patent/CN105556679A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/021—Manufacture or treatment of breakdown diodes
    • H10D8/022—Manufacture or treatment of breakdown diodes of Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/021—Manufacture or treatment of breakdown diodes
    • H10D8/024—Manufacture or treatment of breakdown diodes of Avalanche diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
    • H10P32/1406—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase by ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

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  • Semiconductor Integrated Circuits (AREA)
CN201480051532.6A 2013-10-01 2014-09-26 具有更高反向浪涌能力和更小漏电流的含多晶硅层齐纳二极管 Pending CN105556679A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/043,431 US9202935B2 (en) 2013-10-01 2013-10-01 Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current
US14/043,431 2013-10-01
PCT/US2014/057577 WO2015050776A1 (en) 2013-10-01 2014-09-26 Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage current

Publications (1)

Publication Number Publication Date
CN105556679A true CN105556679A (zh) 2016-05-04

Family

ID=52739291

Family Applications (1)

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CN201480051532.6A Pending CN105556679A (zh) 2013-10-01 2014-09-26 具有更高反向浪涌能力和更小漏电流的含多晶硅层齐纳二极管

Country Status (7)

Country Link
US (3) US9202935B2 (enExample)
EP (1) EP3053198A4 (enExample)
JP (1) JP6594296B2 (enExample)
KR (1) KR101800331B1 (enExample)
CN (1) CN105556679A (enExample)
TW (1) TWI648770B (enExample)
WO (1) WO2015050776A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9202935B2 (en) * 2013-10-01 2015-12-01 Vishay General Semiconductor Llc Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current
US10355144B1 (en) 2018-07-23 2019-07-16 Amazing Microelectronic Corp. Heat-dissipating Zener diode
US12501632B2 (en) 2022-12-15 2025-12-16 Nxp B.V. Semiconductor device with improved mechanical stress resistance

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60260162A (ja) * 1984-06-06 1985-12-23 Rohm Co Ltd 半導体装置の製造方法
JPS6481265A (en) * 1987-09-22 1989-03-27 Fujitsu Ltd Schottky barrier diode device
JPH04137042U (ja) * 1991-03-05 1992-12-21 新電元工業株式会社 半導体装置
JPH0864843A (ja) * 1994-08-26 1996-03-08 Rohm Co Ltd ツェナーダイオードの製造方法
CN101536189A (zh) * 2006-11-16 2009-09-16 万国半导体股份有限公司 具有电磁干扰滤波器的垂直瞬态电压抑制器（tvs）的电路结构及制造方法
JP2010199165A (ja) * 2009-02-24 2010-09-09 Panasonic Corp 半導体装置とその製造方法
US20100244194A1 (en) * 2009-03-31 2010-09-30 Masada Atsuya Semiconductor device and manufacturing method thereof

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JPS5950113B2 (ja) * 1975-11-05 1984-12-06 株式会社東芝 半導体装置
JPS60136270A (ja) * 1983-12-24 1985-07-19 Toshiba Corp 半導体装置の製造方法
US4775643A (en) 1987-06-01 1988-10-04 Motorola Inc. Mesa zener diode and method of manufacture thereof
US4945070A (en) * 1989-01-24 1990-07-31 Harris Corporation Method of making cmos with shallow source and drain junctions
JPH05110005A (ja) * 1991-10-16 1993-04-30 N M B Semiconductor:Kk Ｍｏｓ型トランジスタ半導体装置およびその製造方法
JP2666743B2 (ja) 1994-11-22 1997-10-22 日本電気株式会社 定電圧ダイオード
JPH0945912A (ja) * 1995-07-31 1997-02-14 Nec Corp 半導体装置およびその製造方法
US5710054A (en) * 1996-08-26 1998-01-20 Advanced Micro Devices, Inc. Method of forming a shallow junction by diffusion from a silicon-based spacer
US6791161B2 (en) 2002-04-08 2004-09-14 Fabtech, Inc. Precision Zener diodes
US7012276B2 (en) 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
EP1672701B1 (en) 2004-12-15 2012-02-15 LG Electronics, Inc. Method for fabricating and packaging Zener diodes
JP2006179518A (ja) * 2004-12-20 2006-07-06 Steady Design Ltd ツェナーダイオードの製造方法
US7511357B2 (en) * 2007-04-20 2009-03-31 Force-Mos Technology Corporation Trenched MOSFETs with improved gate-drain (GD) clamp diodes
KR20090015719A (ko) 2007-08-09 2009-02-12 주식회사 하이닉스반도체 상변화 메모리 장치의 ｐｎ 다이오드 및 그 제조방법
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US8198703B2 (en) 2010-01-18 2012-06-12 Freescale Semiconductor, Inc. Zener diode with reduced substrate current
JP2012174894A (ja) 2011-02-22 2012-09-10 Renesas Electronics Corp ツェナーダイオード、半導体装置及びそれらの製造方法
US9202935B2 (en) * 2013-10-01 2015-12-01 Vishay General Semiconductor Llc Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60260162A (ja) * 1984-06-06 1985-12-23 Rohm Co Ltd 半導体装置の製造方法
JPS6481265A (en) * 1987-09-22 1989-03-27 Fujitsu Ltd Schottky barrier diode device
JPH04137042U (ja) * 1991-03-05 1992-12-21 新電元工業株式会社 半導体装置
JPH0864843A (ja) * 1994-08-26 1996-03-08 Rohm Co Ltd ツェナーダイオードの製造方法
CN101536189A (zh) * 2006-11-16 2009-09-16 万国半导体股份有限公司 具有电磁干扰滤波器的垂直瞬态电压抑制器（tvs）的电路结构及制造方法
JP2010199165A (ja) * 2009-02-24 2010-09-09 Panasonic Corp 半導体装置とその製造方法
US20100244194A1 (en) * 2009-03-31 2010-09-30 Masada Atsuya Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
KR20160052606A (ko) 2016-05-12
EP3053198A4 (en) 2017-05-03
US9331142B2 (en) 2016-05-03
TWI648770B (zh) 2019-01-21
WO2015050776A1 (en) 2015-04-09
EP3053198A1 (en) 2016-08-10
JP6594296B2 (ja) 2019-10-23
US20150340431A1 (en) 2015-11-26
US9202935B2 (en) 2015-12-01
TW201528343A (zh) 2015-07-16
US20150091136A1 (en) 2015-04-02
US9966429B2 (en) 2018-05-08
KR101800331B1 (ko) 2017-11-22
JP2016536778A (ja) 2016-11-24
US20150340458A1 (en) 2015-11-26

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