TWI648770B - 具有改善的逆向突波能力及減少的漏電流的多晶矽層之齊納二極體 - Google Patents

具有改善的逆向突波能力及減少的漏電流的多晶矽層之齊納二極體 Download PDF

Info

Publication number
TWI648770B
TWI648770B TW103133534A TW103133534A TWI648770B TW I648770 B TWI648770 B TW I648770B TW 103133534 A TW103133534 A TW 103133534A TW 103133534 A TW103133534 A TW 103133534A TW I648770 B TWI648770 B TW I648770B
Authority
TW
Taiwan
Prior art keywords
layer
semiconductor
substrate
junction
disposed
Prior art date
Application number
TW103133534A
Other languages
English (en)
Chinese (zh)
Other versions
TW201528343A (zh
Inventor
陳世冠
江挽瀾
林意茵
蔣銘泰
彭智平
Original Assignee
微協通用半導體有限責任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 微協通用半導體有限責任公司 filed Critical 微協通用半導體有限責任公司
Publication of TW201528343A publication Critical patent/TW201528343A/zh
Application granted granted Critical
Publication of TWI648770B publication Critical patent/TWI648770B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/021—Manufacture or treatment of breakdown diodes
    • H10D8/022—Manufacture or treatment of breakdown diodes of Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/021—Manufacture or treatment of breakdown diodes
    • H10D8/024—Manufacture or treatment of breakdown diodes of Avalanche diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H10P14/40—
    • H10P30/204—
    • H10P30/212—
    • H10P32/1406—
    • H10P32/1414—
    • H10P32/171—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW103133534A 2013-10-01 2014-09-26 具有改善的逆向突波能力及減少的漏電流的多晶矽層之齊納二極體 TWI648770B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/043,431 US9202935B2 (en) 2013-10-01 2013-10-01 Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current
US14/043,431 2013-10-01

Publications (2)

Publication Number Publication Date
TW201528343A TW201528343A (zh) 2015-07-16
TWI648770B true TWI648770B (zh) 2019-01-21

Family

ID=52739291

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103133534A TWI648770B (zh) 2013-10-01 2014-09-26 具有改善的逆向突波能力及減少的漏電流的多晶矽層之齊納二極體

Country Status (7)

Country Link
US (3) US9202935B2 (enExample)
EP (1) EP3053198A4 (enExample)
JP (1) JP6594296B2 (enExample)
KR (1) KR101800331B1 (enExample)
CN (1) CN105556679A (enExample)
TW (1) TWI648770B (enExample)
WO (1) WO2015050776A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9202935B2 (en) * 2013-10-01 2015-12-01 Vishay General Semiconductor Llc Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current
US10355144B1 (en) 2018-07-23 2019-07-16 Amazing Microelectronic Corp. Heat-dissipating Zener diode
US12501632B2 (en) 2022-12-15 2025-12-16 Nxp B.V. Semiconductor device with improved mechanical stress resistance

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5736779A (en) * 1995-07-31 1998-04-07 Nec Corporation Semiconductor device with Zener diode for gate protection, and method for fabricating the same
US20080121988A1 (en) * 2006-11-16 2008-05-29 Alpha & Omega Semiconductor, Ltd Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2317767A2 (fr) * 1975-07-10 1977-02-04 Silec Semi Conducteurs Applications d'un procede de diffusion profonde d'impuretes dans un substrat
JPS5950113B2 (ja) * 1975-11-05 1984-12-06 株式会社東芝 半導体装置
JPS60136270A (ja) * 1983-12-24 1985-07-19 Toshiba Corp 半導体装置の製造方法
JPH0691267B2 (ja) * 1984-06-06 1994-11-14 ローム株式会社 半導体装置の製造方法
US4775643A (en) 1987-06-01 1988-10-04 Motorola Inc. Mesa zener diode and method of manufacture thereof
JPS6481265A (en) * 1987-09-22 1989-03-27 Fujitsu Ltd Schottky barrier diode device
US4945070A (en) * 1989-01-24 1990-07-31 Harris Corporation Method of making cmos with shallow source and drain junctions
JP2527630Y2 (ja) * 1991-03-05 1997-03-05 新電元工業株式会社 半導体装置
JPH05110005A (ja) * 1991-10-16 1993-04-30 N M B Semiconductor:Kk Ｍｏｓ型トランジスタ半導体装置およびその製造方法
JPH0864843A (ja) 1994-08-26 1996-03-08 Rohm Co Ltd ツェナーダイオードの製造方法
JP2666743B2 (ja) 1994-11-22 1997-10-22 日本電気株式会社 定電圧ダイオード
US5710054A (en) * 1996-08-26 1998-01-20 Advanced Micro Devices, Inc. Method of forming a shallow junction by diffusion from a silicon-based spacer
US6791161B2 (en) 2002-04-08 2004-09-14 Fabtech, Inc. Precision Zener diodes
US7012276B2 (en) 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
US7582537B2 (en) 2004-12-15 2009-09-01 Lg Electronics Inc. Zener diode and methods for fabricating and packaging same
JP2006179518A (ja) * 2004-12-20 2006-07-06 Steady Design Ltd ツェナーダイオードの製造方法
US7511357B2 (en) * 2007-04-20 2009-03-31 Force-Mos Technology Corporation Trenched MOSFETs with improved gate-drain (GD) clamp diodes
KR20090015719A (ko) 2007-08-09 2009-02-12 주식회사 하이닉스반도체 상변화 메모리 장치의 ｐｎ 다이오드 및 그 제조방법
JP2010199165A (ja) * 2009-02-24 2010-09-09 Panasonic Corp 半導体装置とその製造方法
US8101993B2 (en) 2009-03-18 2012-01-24 Force Mos Technology Co., Ltd. MSD integrated circuits with shallow trench
US8415765B2 (en) * 2009-03-31 2013-04-09 Panasonic Corporation Semiconductor device including a guard ring or an inverted region
EP2317767A1 (en) 2009-10-27 2011-05-04 Nagravision S.A. Method for accessing services by a user unit
US8198703B2 (en) 2010-01-18 2012-06-12 Freescale Semiconductor, Inc. Zener diode with reduced substrate current
JP2012174894A (ja) 2011-02-22 2012-09-10 Renesas Electronics Corp ツェナーダイオード、半導体装置及びそれらの製造方法
US9202935B2 (en) * 2013-10-01 2015-12-01 Vishay General Semiconductor Llc Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5736779A (en) * 1995-07-31 1998-04-07 Nec Corporation Semiconductor device with Zener diode for gate protection, and method for fabricating the same
US20080121988A1 (en) * 2006-11-16 2008-05-29 Alpha & Omega Semiconductor, Ltd Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter

Also Published As

Publication number Publication date
TW201528343A (zh) 2015-07-16
WO2015050776A1 (en) 2015-04-09
US9202935B2 (en) 2015-12-01
US20150340458A1 (en) 2015-11-26
CN105556679A (zh) 2016-05-04
JP6594296B2 (ja) 2019-10-23
EP3053198A4 (en) 2017-05-03
JP2016536778A (ja) 2016-11-24
KR101800331B1 (ko) 2017-11-22
US9966429B2 (en) 2018-05-08
US20150091136A1 (en) 2015-04-02
KR20160052606A (ko) 2016-05-12
EP3053198A1 (en) 2016-08-10
US9331142B2 (en) 2016-05-03
US20150340431A1 (en) 2015-11-26

Similar Documents

Publication Publication Date Title
US8252656B2 (en) Zener triggered ESD protection
CN102714206B (zh) Esd保护器件及其制造方法
US9837516B2 (en) Bi-directional punch-through semiconductor device and manufacturing method thereof
US10483257B2 (en) Low voltage NPN with low trigger voltage and high snap back voltage for ESD protection
CN101563784B (zh) 低正向电压降的瞬态电压抑制器及其制造方法
US20180190643A1 (en) Transient overvoltage protection device
TWI648770B (zh) 具有改善的逆向突波能力及減少的漏電流的多晶矽層之齊納二極體
Lynch et al. Design considerations for high voltage SiC power devices: An experimental investigation into channel pinching of 10kV SiC junction barrier schottky (JBS) diodes
US9831327B2 (en) Electrostatic discharge protection devices and methods of forming the same
CN105679836B (zh) 一种超低电容tvs二极管结构及其制备方法
KR102670357B1 (ko) SiC 기반 보호 디바이스를 위한 구조 및 방법
KR102910198B1 (ko) SiC 기반 보호 디바이스를 위한 구조 및 방법
US20150097269A1 (en) Transient voltage suppression device and manufacturing method thereof
CN110581178A (zh) 一种二极管突波电压抑制器芯片及其制造方法
TWI557925B (zh) 半導體裝置及其製造方法