JP6594296B2 - 改善された逆サージ能力及び削減されたリーク電流のポリシリコン層を有するツェナーダイオード - Google Patents

改善された逆サージ能力及び削減されたリーク電流のポリシリコン層を有するツェナーダイオード Download PDF

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JP6594296B2
JP6594296B2 JP2016516551A JP2016516551A JP6594296B2 JP 6594296 B2 JP6594296 B2 JP 6594296B2 JP 2016516551 A JP2016516551 A JP 2016516551A JP 2016516551 A JP2016516551 A JP 2016516551A JP 6594296 B2 JP6594296 B2 JP 6594296B2
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layer
zener diode
semiconductor substrate
polysilicon layer
leakage current
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JP2016536778A5 (enExample
JP2016536778A (ja
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シー−クアン・チェン
ワン−ラン・チアン
イー−イン・リン
ミン−タイ・チアン
チー−ピン・ペン
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Vishay General Semiconductor LLC
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Vishay General Semiconductor LLC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/021—Manufacture or treatment of breakdown diodes
    • H10D8/022—Manufacture or treatment of breakdown diodes of Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/021—Manufacture or treatment of breakdown diodes
    • H10D8/024—Manufacture or treatment of breakdown diodes of Avalanche diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2016516551A 2013-10-01 2014-09-26 改善された逆サージ能力及び削減されたリーク電流のポリシリコン層を有するツェナーダイオード Active JP6594296B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/043,431 2013-10-01
US14/043,431 US9202935B2 (en) 2013-10-01 2013-10-01 Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current
PCT/US2014/057577 WO2015050776A1 (en) 2013-10-01 2014-09-26 Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage current

Publications (3)

Publication Number Publication Date
JP2016536778A JP2016536778A (ja) 2016-11-24
JP2016536778A5 JP2016536778A5 (enExample) 2017-11-02
JP6594296B2 true JP6594296B2 (ja) 2019-10-23

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JP2016516551A Active JP6594296B2 (ja) 2013-10-01 2014-09-26 改善された逆サージ能力及び削減されたリーク電流のポリシリコン層を有するツェナーダイオード

Country Status (7)

Country Link
US (3) US9202935B2 (enExample)
EP (1) EP3053198A4 (enExample)
JP (1) JP6594296B2 (enExample)
KR (1) KR101800331B1 (enExample)
CN (1) CN105556679A (enExample)
TW (1) TWI648770B (enExample)
WO (1) WO2015050776A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9202935B2 (en) * 2013-10-01 2015-12-01 Vishay General Semiconductor Llc Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current
US10355144B1 (en) 2018-07-23 2019-07-16 Amazing Microelectronic Corp. Heat-dissipating Zener diode
US12501632B2 (en) 2022-12-15 2025-12-16 Nxp B.V. Semiconductor device with improved mechanical stress resistance

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JPH0691267B2 (ja) * 1984-06-06 1994-11-14 ローム株式会社 半導体装置の製造方法
US4775643A (en) 1987-06-01 1988-10-04 Motorola Inc. Mesa zener diode and method of manufacture thereof
JPS6481265A (en) * 1987-09-22 1989-03-27 Fujitsu Ltd Schottky barrier diode device
US4945070A (en) * 1989-01-24 1990-07-31 Harris Corporation Method of making cmos with shallow source and drain junctions
JP2527630Y2 (ja) * 1991-03-05 1997-03-05 新電元工業株式会社 半導体装置
JPH05110005A (ja) * 1991-10-16 1993-04-30 N M B Semiconductor:Kk Ｍｏｓ型トランジスタ半導体装置およびその製造方法
JPH0864843A (ja) 1994-08-26 1996-03-08 Rohm Co Ltd ツェナーダイオードの製造方法
JP2666743B2 (ja) 1994-11-22 1997-10-22 日本電気株式会社 定電圧ダイオード
JPH0945912A (ja) * 1995-07-31 1997-02-14 Nec Corp 半導体装置およびその製造方法
US5710054A (en) * 1996-08-26 1998-01-20 Advanced Micro Devices, Inc. Method of forming a shallow junction by diffusion from a silicon-based spacer
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EP1672701B1 (en) 2004-12-15 2012-02-15 LG Electronics, Inc. Method for fabricating and packaging Zener diodes
JP2006179518A (ja) * 2004-12-20 2006-07-06 Steady Design Ltd ツェナーダイオードの製造方法
US7781826B2 (en) * 2006-11-16 2010-08-24 Alpha & Omega Semiconductor, Ltd. Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter
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KR20090015719A (ko) 2007-08-09 2009-02-12 주식회사 하이닉스반도체 상변화 메모리 장치의 ｐｎ 다이오드 및 그 제조방법
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US9202935B2 (en) * 2013-10-01 2015-12-01 Vishay General Semiconductor Llc Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current

Also Published As

Publication number Publication date
TWI648770B (zh) 2019-01-21
US9966429B2 (en) 2018-05-08
CN105556679A (zh) 2016-05-04
US20150340458A1 (en) 2015-11-26
US9202935B2 (en) 2015-12-01
EP3053198A4 (en) 2017-05-03
KR101800331B1 (ko) 2017-11-22
KR20160052606A (ko) 2016-05-12
TW201528343A (zh) 2015-07-16
US9331142B2 (en) 2016-05-03
US20150091136A1 (en) 2015-04-02
EP3053198A1 (en) 2016-08-10
WO2015050776A1 (en) 2015-04-09
JP2016536778A (ja) 2016-11-24
US20150340431A1 (en) 2015-11-26

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