CN106601826B - 一种快恢复二极管及其制作方法 - Google Patents
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Abstract
本发明提供一种快恢复二极管及其制作方法，所述二极管包括含有有源区(5)和具有间隔的终端保护环(7)的衬底N‑层(2)，所述衬底N‑层(2)的正面和背面分别有氧化层(3)和缓冲层(4)，再于所述氧化层(3)敷设有BPSG层(8)，所述有源区(5)设有金属电极(9)，所述有源区(5)周边设有电阻区(6)；所述制作方法包括：1)初始氧化；2)形成背面缓冲层；3)形成离子注入窗口；4)PN结形成；5)BPSG淀积；6)引线孔形成；7)金属电极淀积；8)形成表面钝化层；本发明方法制备的快恢复二极管，改善了反向恢复过程中电流的不均匀性，避免电流集边现象，缓解局部动态雪崩增强，提高了其抗动态雪崩能力。
Description
技术领域
本发明涉及一种电力电子器件，具体涉及一种快恢复二极管及其制作方法。
背景技术
快恢复二极管(FRD)具有开关特性好，反向恢复时间短、正向电流大、体积小、安装简便等优点。主要应用于开关电源、PWM脉宽调制器、变频器和逆变器等电力电子电路中，作为高频整流二极管、续流二极管或阻尼二极管使用。其内部结构与普通PN结二极管不同，它属于PIN结型二极管，即在P型硅材料与N型硅材料中间增加了基区I，构成PIN硅片。
快恢复二极管应用于逆变器时，反向恢复过程中发生的动态雪崩击穿常常引起其损坏，甚至于在反向电压低于静态击穿电压的情况下。随着逆变器频率的增大，快恢复二极管承受的di/dt也越来越高，反向恢复过程中的动态雪崩击穿更易于发生。
普通平面型的快恢复二极管在反向恢复过程中存在电流集边现象，即正向导通时注入到终端下面的等离子体，在反向恢复过程中大多数是从有源区的侧面(结弯曲处)抽出，使局部动态雪崩增强，进而导致快恢复二极管在有源区的四个边角处易于发生动态雪崩击穿。
发明内容
本发明的目的是提供一种快恢复二极管及其制作方法，克服现有技术的不足，改善反向恢复过程中电流的不均匀性，避免电流集边现象，缓解局部动态雪崩增强，提高快恢复二极管的抗动态雪崩能力。
为解决上述技术问题，本发明采用以下技术方案：
一种快恢复二极管，所述二极管包括含有有源区(5)和具有间隔的终端保护环(7)的衬底N-层(2)，所述衬底N-层(2)的正面和背面分别有氧化层(3)和缓冲层(4)，再于所述氧化层(3)敷设有BPSG层(8)，所述有源区(5)设有金属电极(9)，所述有源区(5)周边设有电阻区(6)。
所述的快恢复二极管的第一优选方案，所述氧化层(3)的厚度为 所述背面缓冲层(4)的厚度为1-120μm。
所述的快恢复二极管的第二优选方案，所述BPSG层(8)的厚度为
所述的快恢复二极管的第三优选方案，所述有源区(5)和终端保护环(7)的离子掺杂浓度为1e15-1e18，所述电阻区(6)的离子掺杂浓度为1e14-1e17。
所述的快恢复二极管的第四优选方案，所述电阻区(6)的离子掺杂浓度低于有源区(5)。
一种所述的快恢复二极管的制作方法，所述方法包括：
1)初始氧化：高温氧化N型硅片在正面和背面生长氧化层；
2)背面缓冲层：去除背面氧化层，形成背面缓冲层；
3)离子注入窗口：通过涂胶、曝光、显影、刻蚀和去胶形成有源区、电阻区和终端耐压环的离子注入窗口；
4)PN结形成：经硼离子注入及退火，形成掺杂的有源区、电阻区和终端保护环；
5)BPSG淀积：用CVD方法形成氧化层，并于900-1100℃下回流，得BPSG淀积；
6)引线孔：通过光刻、刻蚀和去胶形成引线孔；
7)金属电极：蒸发或溅射Al，经光刻、刻蚀、去胶和合金工艺形成表面金属淀积；
8)表面钝化：形成表面钝化层。
所述的快恢复二极管的制作方法的第一优选技术方案，步骤2)所述背面缓冲层采用P离子注入及退火或POCl3扩散的方法形成。
所述的快恢复二极管的制作方法的第二优选技术方案，步骤3)中所述电阻区离子注入窗口暴露部分的电阻区，且以有源区离子注入窗口为中心呈对称分布。
所述的快恢复二极管的制作方法的第三优选技术方案，所述电阻区离子注入窗口的形状为同心矩形环、同心圆环、方孔、圆孔或菱形孔。
所述的快恢复二极管的制作方法的第四优选技术方案，步骤4)中所述硼离子的注入剂量为1e13-1e15，所述退火在氮气气氛中于1050-1250℃下进行。
快恢复二极管的有源区和终端离子注入窗口形成时，通过控制离子注入掩膜图形，以部分氧化层作为掩蔽，实现有源区四周离子注入透明度的降低，形成低掺杂的电阻区，即形成注入窗口时，有源区四周表面的氧化层不像有源区那样完全去除，而是以有源区为中心呈对称分布的去除，电阻区的注入窗口图形为同心矩形环、同心圆环、方孔、圆孔或菱形孔等，或去除的氧化层图形为方孔、圆孔或菱形孔等。本发明的设计，利于在正向导通时降低注入到终端下面的等离子体数量，从而减少在反向恢复时从终端下面抽出的等离子体数量；同时，低掺杂的电阻区具有增大电阻区电阻的作用，有效地减少空穴从有源区的侧面抽出的数量，增大空穴从有源区下面(平行平面结处)抽出的数量；从而改善反向恢复过程中电流的不均匀性，避免电流集边现象，缓解局部动态雪崩增强，提高快恢复二极管的抗动态雪崩能力。
本发明二极管为低压、中高压、高压等级快恢复二极管，本发明方法适用于600V～6500V电压等级的快恢复二极管。
与最接近的现有技术比，本发明具有如下有益效果：
1)低掺杂的电阻区与有源区及终端的离子注入一次形成，不增加工艺步骤和成本；
2)电阻区的掺杂浓度可以通过调节离子注入掩膜版图实现有源区四周的离子注入透明度，工艺易控；
3)减弱电流集边现象，缓解局部动态雪崩增强，提高快恢复二极管的抗动态雪崩能力。
附图说明
图1：离子注入掩膜版图示意图，其中：a电阻区掩膜为同心矩形环，b电阻区掩膜为圆孔；
图2：衬底生长氧化层；
图3：背面形成缓冲层；
图4：形成离子注入窗口；
图5：经过离子注入及推结后的结构；
图6：引线孔形成后的结构；
图7：金属阳极形成后的结构；
其中：1氧化层；2衬底N-层；3氧化层；4缓冲层；5有源区；6电阻区；7终端保护环；8BPSG层；9金属电极。
具体实施方式
为更好地说明本发明，便于理解本发明的技术方案，本发明的典型但非限制性的实施例如下：
实施例1
制作1700V电压等级快恢复二极管：
1)初始氧化：使用高温氧化的方法，在N型硅片表面和背面生长氧化层，厚度见图2；
2)背面缓冲层：去除背面氧化层1，采用P离子注入加退火或POCl3扩散的方法形成背面缓冲层4，见图3；
3)离子注入窗口：通过涂胶，曝光，显影，刻蚀，去胶工艺形成有源区、低掺杂的电阻区和终端耐压环的离子注入窗口，见图4，离子注入掩膜版图如图1中a所示；
4)PN结形成：进行一次硼离子注入，剂量为1e13-1e15，之后在1050-1250℃高温及氮气气氛下退火，形成有源区掺杂5、电阻区掺杂6、终端保护环掺杂7，见图5；
5)BPSG淀积：通过CVD工艺形成氧化层，并在900-1100℃高温下回流；
6)引线孔：通过光刻，刻蚀，去胶工艺形成引线孔，见图6；
7)金属电极：蒸发或者溅射Al，通过光刻，刻蚀，去胶，合金工艺形成表面金属淀积，见图7；
8)表面钝化：形成表面钝化层。
以上实施例仅用以说明本发明的技术方案而非对其限制，所属领域的普通技术人员应当理解，参照上述实施例可以对本发明的具体实施方式进行修改或者等同替换，这些未脱离本发明精神和范围的任何修改或者等同替换均在申请待批的权利要求保护范围之内。
Claims (3)
1.一种快恢复二极管，所述二极管包括含有有源区（5）和具有间隔的终端保护环（7）的衬底N-层（2），所述衬底N-层（2）的正面和背面分别有氧化层（3）和缓冲层（4），其特征在于，再于所述氧化层（3）的表面敷设有BPSG层（8），所述有源区（5）设有金属电极（9），所述有源区（5）周边设有电阻区（6）；所述电阻区离子注入窗口暴露部分的电阻区，且以有源区离子注入窗口为中心呈对称分布；所述电阻区离子注入窗口的形状为同心矩形环、同心圆环、方孔、圆孔或菱形孔；所述电阻区（6）离子注入窗口中的BPSG形成多道环形结构围绕所述金属电极（9）；
所述氧化层（3）的厚度为8000-20000 Å，所述背面缓冲层（4）的厚度为1-120μm；
所述BPSG层（8）的厚度为10000-30000 Å；
所述有源区（5）和终端保护环（7）的离子掺杂浓度为1e15-1e18，所述电阻区（6）的离子掺杂浓度为1e14-1e17。
2.根据权利要求1所述的快恢复二极管，其特征在于，所述电阻区（6）的离子掺杂浓度低于有源区（5）。
3.一种权利要求1所述的快恢复二极管的制作方法，所述方法包括：
1）初始氧化：高温氧化N型硅片在正面和背面生长氧化层；
2）背面缓冲层：去除背面氧化层，形成背面缓冲层；
3）离子注入窗口：通过涂胶、曝光、显影、刻蚀和去胶形成有源区、电阻区和终端耐压环的离子注入窗口；
4）PN结形成：经硼离子注入及退火，形成掺杂的有源区、电阻区和终端保护环；
5）BPSG淀积：用CVD方法形成氧化层，并于900-1100℃下回流，得BPSG淀积；
6）引线孔：通过光刻、刻蚀和去胶形成引线孔；
7）金属电极：蒸发或溅射Al，经光刻、刻蚀、去胶和合金工艺形成表面金属淀积；
8）表面钝化：形成表面钝化层；
步骤2）所述背面缓冲层采用P离子注入及退火或POCl3扩散的方法形成；
步骤3）中所述电阻区离子注入窗口暴露部分的电阻区，且以有源区离子注入窗口为中心呈对称分布；所述电阻区离子注入窗口的形状为同心矩形环、同心圆环、方孔、圆孔或菱形孔；
步骤4）中所述硼离子的注入剂量为1e13-1e15，所述退火在氮气气氛中于1050-1250℃下进行，所述电阻区离子注入窗口中的BPSG形成多道环形结构围绕所述金属电极（9）。
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