CN108603290B - Cvd设备 - Google Patents

Cvd设备 Download PDF

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Publication number
CN108603290B
CN108603290B CN201680065679.XA CN201680065679A CN108603290B CN 108603290 B CN108603290 B CN 108603290B CN 201680065679 A CN201680065679 A CN 201680065679A CN 108603290 B CN108603290 B CN 108603290B
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CN
China
Prior art keywords
preheat ring
ring
vapor deposition
chemical vapor
deposition system
Prior art date
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Active
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CN201680065679.XA
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English (en)
Chinese (zh)
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CN108603290A (zh
Inventor
王刚
S·G·托马斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalWafers Co Ltd
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GlobalWafers Co Ltd
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Publication date
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Publication of CN108603290A publication Critical patent/CN108603290A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
CN201680065679.XA 2015-10-01 2016-09-29 Cvd设备 Active CN108603290B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562235826P 2015-10-01 2015-10-01
US62/235,826 2015-10-01
PCT/US2016/054507 WO2017059114A1 (en) 2015-10-01 2016-09-29 Cvd apparatus

Publications (2)

Publication Number Publication Date
CN108603290A CN108603290A (zh) 2018-09-28
CN108603290B true CN108603290B (zh) 2021-09-10

Family

ID=57178489

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680065679.XA Active CN108603290B (zh) 2015-10-01 2016-09-29 Cvd设备

Country Status (6)

Country Link
US (1) US11598021B2 (enExample)
EP (1) EP3356573B1 (enExample)
JP (1) JP6875386B2 (enExample)
CN (1) CN108603290B (enExample)
TW (1) TWI694169B (enExample)
WO (1) WO2017059114A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12252806B2 (en) * 2020-12-31 2025-03-18 Globalwafers Co., Ltd Systems and methods for a preheat ring in a semiconductor wafer reactor
US11515196B1 (en) 2021-05-13 2022-11-29 Globalwafers Co., Ltd. Methods for etching a semiconductor structure and for conditioning a processing reactor
WO2022240726A1 (en) 2021-05-13 2022-11-17 Globalwafers Co., Ltd. Methods for etching a semiconductor structure and for conditioning a processing reactor
US11495487B1 (en) 2021-05-13 2022-11-08 Globalwafers Co., Ltd. Methods for conditioning a processing reactor
CN113981531B (zh) * 2021-10-26 2022-10-04 江苏天芯微半导体设备有限公司 一种预热环及衬底处理设备
US20250259864A1 (en) * 2024-02-12 2025-08-14 Agnitron Technology, Inc. Rapid thermal cycling annealing apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102751181A (zh) * 2011-04-18 2012-10-24 硅电子股份公司 用于在晶片基材上沉积来自于工艺气体的材料层的方法和装置

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JPH06132231A (ja) * 1992-10-20 1994-05-13 Hitachi Ltd Ｃｖｄ装置
EP0606751B1 (en) * 1993-01-13 2002-03-06 Applied Materials, Inc. Method for depositing polysilicon films having improved uniformity and apparatus therefor
JPH1060624A (ja) * 1996-08-20 1998-03-03 Matsushita Electric Ind Co Ltd スパッタリング装置
US6364957B1 (en) * 1997-10-09 2002-04-02 Applied Materials, Inc. Support assembly with thermal expansion compensation
US6170433B1 (en) * 1998-07-23 2001-01-09 Applied Materials, Inc. Method and apparatus for processing a wafer
US6896738B2 (en) * 2001-10-30 2005-05-24 Cree, Inc. Induction heating devices and methods for controllably heating an article
JP2003142408A (ja) * 2001-10-31 2003-05-16 Shin Etsu Handotai Co Ltd 枚葉式熱処理装置および熱処理方法
JP3758579B2 (ja) 2002-01-23 2006-03-22 信越半導体株式会社 熱処理装置および熱処理方法
JP2004134625A (ja) 2002-10-11 2004-04-30 Toshiba Corp 半導体装置の製造方法と製造装置
FR2846786B1 (fr) * 2002-11-05 2005-06-17 Procede de recuit thermique rapide de tranches a couronne
US7311784B2 (en) * 2002-11-26 2007-12-25 Tokyo Electron Limited Plasma processing device
US9890455B2 (en) * 2010-10-29 2018-02-13 Applied Materials, Inc. Pre-heat ring designs to increase deposition uniformity and substrate throughput
US9117670B2 (en) * 2013-03-14 2015-08-25 Sunedison Semiconductor Limited (Uen201334164H) Inject insert liner assemblies for chemical vapor deposition systems and methods of using same
US10047457B2 (en) 2013-09-16 2018-08-14 Applied Materials, Inc. EPI pre-heat ring
US20150083046A1 (en) * 2013-09-26 2015-03-26 Applied Materials, Inc. Carbon fiber ring susceptor
KR101539298B1 (ko) * 2013-11-25 2015-07-29 주식회사 엘지실트론 에피택셜 웨이퍼 성장 장치
WO2015084487A1 (en) * 2013-12-06 2015-06-11 Applied Materials, Inc. Apparatus for self centering preheat member

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102751181A (zh) * 2011-04-18 2012-10-24 硅电子股份公司 用于在晶片基材上沉积来自于工艺气体的材料层的方法和装置

Also Published As

Publication number Publication date
US20180282865A1 (en) 2018-10-04
US11598021B2 (en) 2023-03-07
EP3356573A1 (en) 2018-08-08
TWI694169B (zh) 2020-05-21
JP2018531323A (ja) 2018-10-25
JP6875386B2 (ja) 2021-05-26
CN108603290A (zh) 2018-09-28
EP3356573B1 (en) 2021-03-17
TW201720954A (zh) 2017-06-16
WO2017059114A1 (en) 2017-04-06

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Effective date of registration: 20190813

Address after: No. 8 Industrial East Second Road, Xinzhu Science Industrial Park, Taiwan, China

Applicant after: GLOBAL WAFERS CO., LTD.

Address before: Singapore Singapore

Applicant before: SUNEDISON INC

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