JP2018522401A5 - - Google Patents
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- Publication number
- JP2018522401A5 JP2018522401A5 JP2017560537A JP2017560537A JP2018522401A5 JP 2018522401 A5 JP2018522401 A5 JP 2018522401A5 JP 2017560537 A JP2017560537 A JP 2017560537A JP 2017560537 A JP2017560537 A JP 2017560537A JP 2018522401 A5 JP2018522401 A5 JP 2018522401A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer carrier
- wafer
- self
- rotating tube
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005229 chemical vapour deposition Methods 0.000 claims description 91
- 238000000034 method Methods 0.000 claims description 73
- 239000000758 substrate Substances 0.000 claims description 50
- 125000006850 spacer group Chemical group 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 33
- 238000012545 processing Methods 0.000 claims description 28
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 26
- 239000010453 quartz Substances 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 230000003068 static effect Effects 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 20
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 18
- 238000010926 purge Methods 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910002804 graphite Inorganic materials 0.000 claims description 11
- 239000010439 graphite Substances 0.000 claims description 11
- 239000003870 refractory metal Substances 0.000 claims description 9
- 229910052580 B4C Inorganic materials 0.000 claims description 6
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 230000009970 fire resistant effect Effects 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000013459 approach Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000013011 mating Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 19
- 238000013461 design Methods 0.000 description 16
- 238000000151 deposition Methods 0.000 description 15
- 230000008021 deposition Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000000969 carrier Substances 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 239000012780 transparent material Substances 0.000 description 6
- 238000001947 vapour-phase growth Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 150000004678 hydrides Chemical class 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 229910001510 metal chloride Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 241001640117 Callaeum Species 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562183166P | 2015-06-22 | 2015-06-22 | |
| US62/183,166 | 2015-06-22 | ||
| US201562241482P | 2015-10-14 | 2015-10-14 | |
| US62/241,482 | 2015-10-14 | ||
| US201662298540P | 2016-02-23 | 2016-02-23 | |
| US62/298,540 | 2016-02-23 | ||
| PCT/US2016/037022 WO2016209647A1 (en) | 2015-06-22 | 2016-06-10 | Self-centering wafer carrier system for chemical vapor deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2018522401A JP2018522401A (ja) | 2018-08-09 |
| JP2018522401A5 true JP2018522401A5 (enExample) | 2019-06-27 |
Family
ID=57585441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017560537A Pending JP2018522401A (ja) | 2015-06-22 | 2016-06-10 | 化学蒸着のための自己心合ウエハキャリアシステム |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP3311396A4 (enExample) |
| JP (1) | JP2018522401A (enExample) |
| SG (1) | SG11201708235WA (enExample) |
| WO (1) | WO2016209647A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110223950B (zh) * | 2019-07-11 | 2024-05-14 | 通威太阳能（成都）有限公司 | 一种用于化学气相沉积硅基薄膜钝化层的托盘结构及其制作方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2546414B2 (ja) * | 1990-07-06 | 1996-10-23 | 日新電機株式会社 | 気相成長装置 |
| JP3068914B2 (ja) * | 1991-09-30 | 2000-07-24 | 株式会社東芝 | 気相成長装置 |
| KR100660416B1 (ko) * | 1997-11-03 | 2006-12-22 | 에이에스엠 아메리카, 인코포레이티드 | 개량된 저질량 웨이퍼 지지 시스템 |
| JP2007035775A (ja) * | 2005-07-25 | 2007-02-08 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP2007042896A (ja) * | 2005-08-03 | 2007-02-15 | Furukawa Co Ltd | 気相成長装置 |
| JP2007042844A (ja) * | 2005-08-03 | 2007-02-15 | Furukawa Co Ltd | 気相成長装置及びサセプタ |
| US20090025636A1 (en) * | 2007-07-27 | 2009-01-29 | Applied Materials, Inc. | High profile minimum contact process kit for hdp-cvd application |
| US20090165721A1 (en) * | 2007-12-27 | 2009-07-02 | Memc Electronic Materials, Inc. | Susceptor with Support Bosses |
| JP2009277958A (ja) * | 2008-05-16 | 2009-11-26 | Nuflare Technology Inc | 成膜装置及び成膜方法 |
| US8486726B2 (en) | 2009-12-02 | 2013-07-16 | Veeco Instruments Inc. | Method for improving performance of a substrate carrier |
| JP5496721B2 (ja) * | 2010-03-17 | 2014-05-21 | 株式会社ニューフレアテクノロジー | 成膜装置および成膜方法 |
| US8591700B2 (en) * | 2010-08-19 | 2013-11-26 | Stmicroelectronics Pte Ltd. | Susceptor support system |
| TW201218301A (en) * | 2010-10-28 | 2012-05-01 | Applied Materials Inc | Apparatus having improved substrate temperature uniformity using direct heating methods |
| US10167571B2 (en) * | 2013-03-15 | 2019-01-01 | Veeco Instruments Inc. | Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems |
| CN104064490A (zh) * | 2013-03-22 | 2014-09-24 | 株式会社东芝 | 半导体制造装置以及半导体晶片支架 |
| JP6180208B2 (ja) * | 2013-07-08 | 2017-08-16 | 株式会社ニューフレアテクノロジー | 気相成長装置および気相成長方法 |
| JP6226677B2 (ja) * | 2013-10-02 | 2017-11-08 | 株式会社ニューフレアテクノロジー | 半導体製造装置および半導体製造方法 |
-
2016
- 2016-06-10 EP EP16815048.0A patent/EP3311396A4/en not_active Withdrawn
- 2016-06-10 SG SG11201708235WA patent/SG11201708235WA/en unknown
- 2016-06-10 JP JP2017560537A patent/JP2018522401A/ja active Pending
- 2016-06-10 WO PCT/US2016/037022 patent/WO2016209647A1/en not_active Ceased
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