EP3311396A4 - Self-centering wafer carrier system for chemical vapor deposition - Google Patents

Self-centering wafer carrier system for chemical vapor deposition Download PDF

Info

Publication number
EP3311396A4
EP3311396A4 EP16815048.0A EP16815048A EP3311396A4 EP 3311396 A4 EP3311396 A4 EP 3311396A4 EP 16815048 A EP16815048 A EP 16815048A EP 3311396 A4 EP3311396 A4 EP 3311396A4
Authority
EP
European Patent Office
Prior art keywords
self
vapor deposition
chemical vapor
carrier system
wafer carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP16815048.0A
Other languages
German (de)
French (fr)
Other versions
EP3311396A1 (en
Inventor
Sandeep Krishnan
Alexander Gurary
Chenghung Paul Chang
Earl MARCELO
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Veeco Instruments Inc
Original Assignee
Veeco Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Veeco Instruments Inc filed Critical Veeco Instruments Inc
Publication of EP3311396A1 publication Critical patent/EP3311396A1/en
Publication of EP3311396A4 publication Critical patent/EP3311396A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
EP16815048.0A 2015-06-22 2016-06-10 Self-centering wafer carrier system for chemical vapor deposition Withdrawn EP3311396A4 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562183166P 2015-06-22 2015-06-22
US201562241482P 2015-10-14 2015-10-14
US201662298540P 2016-02-23 2016-02-23
PCT/US2016/037022 WO2016209647A1 (en) 2015-06-22 2016-06-10 Self-centering wafer carrier system for chemical vapor deposition

Publications (2)

Publication Number Publication Date
EP3311396A1 EP3311396A1 (en) 2018-04-25
EP3311396A4 true EP3311396A4 (en) 2019-02-20

Family

ID=57585441

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16815048.0A Withdrawn EP3311396A4 (en) 2015-06-22 2016-06-10 Self-centering wafer carrier system for chemical vapor deposition

Country Status (4)

Country Link
EP (1) EP3311396A4 (en)
JP (1) JP2018522401A (en)
SG (1) SG11201708235WA (en)
WO (1) WO2016209647A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110223950A (en) * 2019-07-11 2019-09-10 中威新能源(成都)有限公司 A kind of support holder structure and preparation method thereof for chemical vapor deposited silicon base film passivation layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6893507B2 (en) * 1997-11-03 2005-05-17 Asm America, Inc. Self-centering wafer support system
JP2007042844A (en) * 2005-08-03 2007-02-15 Furukawa Co Ltd Vapor phase epitaxy apparatus and susceptor
US20140283748A1 (en) * 2013-03-22 2014-09-25 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor wafer holder

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2546414B2 (en) * 1990-07-06 1996-10-23 日新電機株式会社 Vapor phase growth equipment
JP3068914B2 (en) * 1991-09-30 2000-07-24 株式会社東芝 Vapor phase growth equipment
JP2007035775A (en) * 2005-07-25 2007-02-08 Hitachi Kokusai Electric Inc Substrate processing apparatus
JP2007042896A (en) * 2005-08-03 2007-02-15 Furukawa Co Ltd Vapor phase epitaxy device
US20090025636A1 (en) * 2007-07-27 2009-01-29 Applied Materials, Inc. High profile minimum contact process kit for hdp-cvd application
US20090165721A1 (en) * 2007-12-27 2009-07-02 Memc Electronic Materials, Inc. Susceptor with Support Bosses
JP2009277958A (en) * 2008-05-16 2009-11-26 Nuflare Technology Inc Film deposition apparatus, and film deposition method
US8486726B2 (en) 2009-12-02 2013-07-16 Veeco Instruments Inc. Method for improving performance of a substrate carrier
JP5496721B2 (en) * 2010-03-17 2014-05-21 株式会社ニューフレアテクノロジー Film forming apparatus and film forming method
US8591700B2 (en) * 2010-08-19 2013-11-26 Stmicroelectronics Pte Ltd. Susceptor support system
TW201218301A (en) * 2010-10-28 2012-05-01 Applied Materials Inc Apparatus having improved substrate temperature uniformity using direct heating methods
US10167571B2 (en) * 2013-03-15 2019-01-01 Veeco Instruments Inc. Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
JP6180208B2 (en) * 2013-07-08 2017-08-16 株式会社ニューフレアテクノロジー Vapor growth apparatus and vapor growth method
JP6226677B2 (en) * 2013-10-02 2017-11-08 株式会社ニューフレアテクノロジー Semiconductor manufacturing apparatus and semiconductor manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6893507B2 (en) * 1997-11-03 2005-05-17 Asm America, Inc. Self-centering wafer support system
JP2007042844A (en) * 2005-08-03 2007-02-15 Furukawa Co Ltd Vapor phase epitaxy apparatus and susceptor
US20140283748A1 (en) * 2013-03-22 2014-09-25 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor wafer holder

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2016209647A1 *

Also Published As

Publication number Publication date
JP2018522401A (en) 2018-08-09
SG11201708235WA (en) 2017-11-29
EP3311396A1 (en) 2018-04-25
WO2016209647A1 (en) 2016-12-29

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