JP2007035775A - Substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of making uniform gas distribution and temperature distribution even for a large sized wafer, and forming a highly uniform thin film. <P>SOLUTION: A longitudinal substrate processing apparatus is configured in such a way that a boat 2 for holding a substrate in a reaction tube performs a central axis rotational motion where it rotates around a central axis, and an eccentric axis rotational motion where it rotates around a position shifted from the central axis simultaneously. As shown in FIG. (a), the boat 2 performs the eccentric axis rotational motion as an arrow A2 while performing the central axis rotational motion as an arrow A1 in the reaction tube 1. Consequently, a locus of a point q on the wafer 3 draws a hypocycloid curve as shown in FIG. (b) without drawing a locus of a concentric circle. It is therefore possible to make uniform the temperature distribution over the entire surface of the wafer 3 even if the wafer 3 is rotated. In the same manner, it is also possible to make uniform the gas distribution over the entire surface of the wafer 3. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus that performs a predetermined process on a substrate while heating, and more particularly to a vertical substrate processing apparatus that performs a process on a substrate with a rotating shaft and rotating in a furnace.

  In recent years, in order to reduce the cost of semiconductor products, the diameter of a substrate (hereinafter referred to as a wafer) of a semiconductor device has been increasing. Currently, a wafer having a wafer diameter of 300 mm is mainly used. In addition, miniaturization has progressed in order to improve the performance of semiconductor devices, and there is a need to further improve the uniformity of the thin film constituting the wafer. In order to form a thin film uniformly on a large-diameter wafer, in a vertical substrate processing apparatus (hereinafter referred to as a vertical substrate processing apparatus), by rotating a boat (quartz jig) holding the wafer, It is possible to make the gas necessary for forming the thin film uniform and to reduce the temperature unevenness of the heater (heating mechanism) necessary for heating the wafer.

  FIG. 6 is a schematic longitudinal sectional view of a general vertical substrate processing apparatus. In the vertical substrate processing apparatus 10, a boat 2 that can be freely rotated by a central axis (not shown) is arranged inside a reaction tube 1, and a wafer 3 is placed on each shelf of the boat 2. A reaction gas 4 is supplied into the reaction tube 1. Further, a heater 5 as a heating means is disposed around the reaction tube 1 to heat the inside of the reaction tube 1. With such a configuration, a desired process can be performed on the wafer 3.

  FIG. 7 is a cross-sectional view of the vertical substrate processing apparatus shown in FIG. 6 and is a conceptual diagram showing a state where the boat is rotated. As shown in FIG. 7 (a), a center shaft 6 is provided at the center of the boat 2 housed in the reaction tube 1, and when the boat 2 rotates in the direction of the arrow with the center shaft 6 as an axis, The wafer 3 placed on the boat 2 also rotates in the same direction. Therefore, as shown in FIG. 7B, the rotation trajectory of the wafer 3 when the boat 2 rotates (the trajectory of the circle P point) is also concentric with the central axis 6. Thus, during operation of the vertical substrate processing apparatus 10, it is necessary to form a thin film on the wafer 3 by rotating the boat 2 around the central axis 6 (hereinafter referred to as central axis rotation). The uniformity of the gas 4 and the temperature unevenness of the heater 5 that heats the wafer 3 are reduced.

In addition, the technique of the substrate processing apparatus which provided the rotating shaft in the center part of the reaction tube is disclosed by the following patent document 1, etc., for example. According to this technique, a gas for purging the rotating shaft is supplied to the rotating shaft so as not to make the gas on the substrate surface non-uniform so as to make the film thickness formed on the substrate uniform. As a result, the product yield of the substrate can be improved.
Japanese Patent Laid-Open No. 10-335317

  However, in the case of processing a large-diameter wafer only by the rotation by the central axis of the reaction tube (center axis rotation) as in the conventional vertical substrate processing apparatus, the gas and temperature distribution in the vicinity of the wafer is made uniform. I can't. Therefore, it may be impossible to form a uniform thin film corresponding to miniaturization on the wafer. That is, in order to improve the performance of a semiconductor device, it is necessary to form a more uniform thin film, but it is not possible to form a highly accurate thin film only by rotating the central axis of the reaction tube.

  FIG. 8 is a conceptual diagram showing the temperature distribution of the wafer when the reaction tube is rotated about the central axis in the vertical substrate processing apparatus shown in FIG. In general, by rotating the wafer 3 through the center axis of the boat 2 as described above (that is, by rotating the center axis), the supply of the source gas becomes uniform and the radiation from the heater 5 occurs. Since uniform heating can be obtained with respect to heat, the uniformity of the thin film on the wafer surface can be improved.

  However, if only the center axis of the boat 2 is rotated, the locus of the point P shown in FIG. 7B draws a concentric circle on the surface of the wafer 3, so that the concentric heater 5 shown in FIG. When the heating energy (arrow in FIG. 8A) is uniform, the temperature distribution of the wafer 3 is not uniform. That is, as shown in FIG. 8B, the temperature of the peripheral portion of the wafer 3 near the heater 5 is increased, and the temperature of the central portion of the wafer 3 is decreased. In other words, as shown in FIG. 8C, if the temperature distribution of the wafer 3 is concentrically the same, the temperature distribution of the wafer 3 is high in the periphery and low in the center even if the wafer 3 is rotated about the central axis. Therefore, the temperature uniformity of the wafer 3 is not improved.

  The present invention has been made in view of the above problems, and can achieve uniform gas distribution and temperature distribution even with a large-diameter wafer, and form a highly uniform thin film. It is an object of the present invention to provide a substrate processing apparatus capable of performing the above.

  In order to solve the above problems, a substrate processing apparatus according to the present invention includes a processing chamber that performs a desired process on a substrate while the substrate is held by the substrate holding unit, and a heating unit that heats the inside of the processing chamber. A first rotating mechanism for rotating the substrate holding means about the central axis of the substrate holding means, and a first rotating mechanism together with the substrate holding means about a position eccentric from the central axis of the substrate holding means And a second rotation mechanism that rotates the motor.

  That is, the substrate processing apparatus of the present invention is, for example, a vertical substrate processing apparatus, and a substrate holding means (boat) that holds a substrate in a reaction tube serving as a processing chamber rotates the boat about the central axis. The central axis rotational motion and the eccentric shaft rotational motion for rotating the boat with the position eccentric to the central axis as the axis are configured to be performed simultaneously.

  According to the substrate processing apparatus of the present invention, it is possible to generate a high-quality film on the substrate by causing the boat to perform the central axis rotational motion and the eccentric shaft rotational motion. Thereby, the performance of the semiconductor element can be further improved, and the productivity of the wafer can be increased. In addition, since the uniformity of the temperature distribution on the surface of the wafer is further improved, high-quality film formation with high uniformity can be performed on the wafer. Further, in CVD, even when the shape of the reaction tube does not become the design value due to a processing defect of the reaction tube or a change with time, it is possible to form a high-quality film with high uniformity on the wafer.

<Outline of the invention>
The vertical substrate processing apparatus according to the present invention is configured such that a boat of a quartz jig that holds a substrate in a reaction tube performs a central axis rotation motion and an eccentric shaft rotation motion simultaneously. The center axis rotation movement is a rotation state in which the boat is rotated about the center axis of the boat. The eccentric axis rotation movement is a position where the boat is eccentric with respect to the center axis of the boat. It is the rotation state to rotate. In this way, the temperature distribution and gas distribution of the wafers placed on the boat can be made uniform by causing the boat to perform a combined rotational motion including a central shaft rotational motion and an eccentric shaft rotational motion. As a result, a uniform thin film can be formed on the wafer.

<First Embodiment>
Hereinafter, embodiments of a substrate processing apparatus according to the present invention will be described with reference to the drawings, taking a vertical substrate processing apparatus as an example. The basic structure of the substrate processing apparatus according to the present invention is the same as that of the vertical substrate processing apparatus of FIG. That is, in the vertical substrate processing apparatus 10, a rotatable boat 2 is disposed inside the reaction tube 1, and a wafer 3 is placed on each shelf of the boat 2. A reaction gas 4 is supplied into the reaction tube 1. Further, a heater 5 as a heating means is disposed around the reaction tube 1 to heat the inside of the reaction tube 1.

  FIG. 1 is a conceptual diagram showing the movement of a boat of a vertical substrate processing apparatus according to an embodiment of the present invention. FIG. 1A is a conceptual diagram showing a state where an eccentric shaft is rotated while a boat is rotated about a central axis. (B) is a hypocycloid curve showing the locus of the q point in (a).

  FIG. 1A shows a state in which the boat 2 is performing an eccentric shaft rotational movement as indicated by an arrow A2 while rotating along a central axis as indicated by an arrow A1 within the reaction tube 1. Therefore, this figure shows the locus of the eccentric shaft rotational movement of the boat 2, and there are not three boats 2. The eccentric shaft for causing the boat 2 to perform the eccentric shaft rotation motion is not shown in the figure.

  When the boat 2 performs a combined rotational motion in which a central axis rotational motion and an eccentric shaft rotational motion are added as shown in FIG. 1A, the locus of the point q on the wafer 3 is as shown in FIG. Draw a hypocycloid curve, and do not draw a concentric circle. Therefore, by performing such a combined rotational motion, the wafer 3 does not have the same temperature distribution concentrically, and even if the wafer 3 is rotated, the temperature distribution can be made uniform over the entire surface of the wafer 3. . Similarly, the gas distribution can be made uniform over the entire surface of the wafer 3.

  FIG. 2 is a conceptual diagram showing the temperature distribution of the wafer when the boat is rotated about the central axis and when the boat is combined and rotated in the vertical substrate processing apparatus. As shown in FIG. 2A, when the wafer 3 is not rotated, the temperature of the peripheral portion of the wafer 3 near the heater 5 is high, and the temperature of the central portion of the wafer 3 is low. Thus, if the wafer 3 is concentrically the same temperature distribution, even if the wafer 3 is rotated about the central axis, as shown in FIG. Concentric circles with the same temperature are distributed in the same temperature distribution, and the temperature uniformity of the wafer 3 is not improved.

  However, if a combined rotational motion is added to the wafer 3 as shown in FIG. 1A, the central axis rotational motion and the eccentric shaft rotational motion are added, the locus of the point q on the wafer 3 is as shown in FIG. As a result, as shown in FIG. 2C, the wafer 3 has a substantially uniform temperature distribution from the peripheral portion to the central portion. Thereby, a thin film having a uniform film thickness can be formed on the wafer 3.

<Second Embodiment>
Further, in the CVD (Chemical Vapor Deposition) process, in order to make the film thickness distribution uniform, it is desirable to suppress the gas phase reaction and form the film under conditions close to the surface reaction rate control (dominance of the chemical reaction on the particle surface). However, the gas phase reaction may not be suppressed depending on the gas used. For example, when a silicon oxide film is generated on a wafer using SiH ₄ gas and N ₂ O gas, the gas phase reaction cannot be suppressed. Unlike the surface reaction, such a gas phase reaction does not react on the surface of the wafer, but reacts in a reaction chamber space away from the wafer. Therefore, the positional relationship between the wafer and the reaction tube (that is, the clearance between the wafer and the reaction tube) and the shape of the reaction tube greatly affect the gas phase reaction.

  FIG. 3 is a conceptual diagram showing a state in which the clearance between the wafer and the reaction tube is different by rotating the boat around the central axis in the vertical substrate processing apparatus, and (a) is a state where the rotation angle of the boat is 0 degrees. b) shows a state in which the rotation angle of the boat is 180 degrees. 4A and 4B are cross-sectional views of FIG. 3, in which FIG. 4A shows a state where the boat rotation angle is 0 degrees, and FIG. 4B shows a state where the boat rotation angle is 180 degrees.

  When the boat is rotated about the central axis, as shown in FIGS. 4A and 4B, the narrow clearance between the wafer 3 and the reaction tube 1 is narrow even when the boat 2 is rotated. That is, when the boat 2 is rotated about the central axis, there is no change where the clearance is narrow.

  As shown in FIGS. 3 and 4, when the clearance (gap, distance) between the wafer 3 and the reaction tube 1 varies depending on the rotation angle of the boat, the reaction speed changes due to the difference in space, and the film thickness of the wafer 3 changes. Distribution gets worse. That is, if the space between the wafer 3 and the reaction tube 1 is narrow, the reaction space is narrowed, so the deposition rate is slow. If the space between the wafer 3 and the reaction tube 1 is wide, the reaction space is widened, so the deposition rate is fast. Become. Accordingly, since the film forming speed varies due to the clearance between the wafer 3 and the reaction tube 1 changing while the boat 2 is rotating, the film thickness distribution of the wafer 3 becomes non-uniform.

  As described above, the reason why the clearance varies depending on the rotation angle of the boat is that the reaction tube 1 is deformed due to processing defects or changes over time, and the dimensions of each part of the reaction tube 1 are as designed. It is because it does not become. Therefore, it is possible to secure a margin for absorbing a certain amount of clearance, reduce the number of wafers 3 processed, ensure uniformity of the film thickness distribution of the wafer 3, and suppress troubles during operation of the substrate processing apparatus. I am trying.

  However, when using a gas phase reaction in wafer 3 processing, reducing the number of processed wafers 3 will lead to a decrease in productivity and cost, and a large clearance absorption margin will reduce product yield. Occurs. Therefore, in the substrate processing apparatus of the present invention, even when a gas phase reaction is used in wafer processing, as described above, by performing a combined rotational motion in which a central axis rotational motion and an eccentric shaft rotational motion are added, The clearance between the wafer 3 and the reaction tube 1 is equalized so that the shape of the reaction tube 1 does not affect the gas phase reaction.

  FIG. 5 is a conceptual diagram showing a state in which, in a vertical substrate processing apparatus, a combined rotational motion is performed by adding a central shaft rotational motion and an eccentric shaft rotational motion when the wafer and the reaction tube have different clearances. Is a conceptual diagram showing the rotation state of the wafer, and (b) is a hypocycloid curve showing the locus of point q in (a).

  The locus indicated by the point q of the wafer 3 in FIG. 5 (a) is as shown in FIG. 5 (b) by causing the boat to perform a combined rotational motion including the central axis rotational motion and the eccentric shaft rotational motion. Since the locus of the hypocycloid curve is drawn, even if the clearance between the wafer 3 and the reaction tube 1 changes due to the inclination of the boat, the apparent clearance on the surface of the wafer 3 is constant regardless of the rotation. That is, the state that the portion of the wafer 3 having a narrow clearance generated during the rotation of the central axis as shown in FIG.

  As described above, even when a gas phase reaction is used in wafer processing, the clearance between the reaction tube 1 and the boat 2 can be changed by performing a combination of the central axis rotation and the eccentric axis rotation with respect to the boat. Regardless, the clearance of the wafer 3 can be made uniform, and as a result, the film formation process can be performed on the wafer 3 with a uniform film thickness distribution.

  That is, as shown in FIG. 5A, even when the clearance between the reaction tube 1 and the board 2 is shifted by rotating the central axis and the eccentric axis of the wafer 3, the wafer 3 has a hypocycloid curve. Since the movement is present, the narrow position of the wafer 3 is not the same position. Therefore, the film forming process can be performed on the wafer 3 with a uniform film thickness. If the dimensions of the reaction tube 1 are increased to avoid contact with the boat 2, particles can be suppressed.

<Third Embodiment>
An example model of a vertical reduced pressure CVD processing furnace applied to the present invention will be described. FIG. 9 is a configuration diagram of a vertical reduced pressure CVD processing furnace applied to the present invention. Hereinafter, the low-pressure CVD processing furnace shown in FIG. 9 will be described.

The outer tube (hereinafter referred to as the outer tube 205) is made of a heat-resistant material such as quartz (SiO ₂ ), and has a cylindrical shape with the upper end closed and the lower end opened. The inner tube (hereinafter, inner tube 204) has a cylindrical shape with openings at both ends of the upper end and the lower end, and is disposed concentrically within the outer tube 205. A space between the outer tube 205 and the inner tube 204 forms a cylindrical space 250. The gas rising from the upper opening of the inner tube 204 passes through the cylindrical space 250 and is exhausted from the exhaust pipe 231.

  A manifold 209 made of, for example, stainless steel is engaged with lower ends of the outer tube 205 and the inner tube 204, and the outer tube 205 and the inner tube 204 are held by the manifold 209. The manifold 209 is fixed to holding means (hereinafter referred to as a heater base 251). An annular flange is provided at each of the lower end portion of the outer tube 205 and the upper opening end portion of the manifold 209, and an airtight member (hereinafter referred to as an O-ring 220) is disposed between these flanges. Has been.

  A disc-shaped lid (hereinafter referred to as a seal cap 219) made of, for example, stainless steel is detachably attached to the lower end opening of the manifold 209 so as to be hermetically sealed through an O-ring 220. The seal cap 219 is provided with a gas supply pipe 232 extending therethrough. A processing gas is supplied into the outer tube 205 through these gas supply pipes 232. These gas supply pipes 232 are connected to a gas flow rate control means (hereinafter referred to as a mass flow controller (MFC) 241). The MFC 241 is connected to a gas flow rate control unit, and the flow rate of the supplied gas is set to a predetermined amount. Can be controlled.

  An upper portion of the manifold 209 includes a pressure regulator (for example, an APC, N2 ballast controller, hereinafter referred to as APC 242) and a gas exhaust pipe 231 connected to an exhaust device (hereinafter referred to as a vacuum pump 246). Are connected, and the gas flowing through the cylindrical space 250 between the outer tube 205 and the inner tube 204 is discharged, and the pressure inside the outer tube 205 is controlled by the APC 242 to create a reduced pressure atmosphere of a predetermined pressure. As described above, the pressure is detected by the pressure detecting means (hereinafter referred to as the pressure sensor 245) and controlled by the pressure control unit.

  The seal cap 219 is connected to a rotation mechanism (hereinafter referred to as rotation shafts 254a, b), and a substrate holding means (hereinafter referred to as boat 217) and a substrate (which is held on the boat 217) by the rotation shafts 254a, b. Thereafter, the wafer 200) is rotated. That is, the wafer 200 held on the boat 217 and the boat 217 by the rotation shaft 254a that rotates about the center axis of the boat 217 and the rotation shaft 254b that is not centered on the center axis of the boat 217. Rotate. The seal cap 219 is connected to an elevating means (hereinafter referred to as a boat elevator 115), and elevates the boat 217. The drive control unit controls the rotating shafts 254a and 254b and the boat elevator 115 to have a predetermined speed.

  On the outer periphery of the outer tube 205, heating means (hereinafter referred to as a heater 207) is concentrically arranged. The heater 207 detects the temperature by temperature detection means (hereinafter, thermocouple 263) so that the temperature in the outer tube 205 becomes a predetermined processing temperature, and is controlled by the temperature control unit.

  An example of the low pressure CVD processing method using the processing furnace shown in FIG. 9 will be described. First, the boat 217 is lowered by the boat elevator 115. Then, a plurality of wafers 200 are held on the boat 217. Next, the temperature in the outer tube 205 is set to a predetermined processing temperature while being heated by the heater 207. Further, the MFC 241 connected to the gas supply pipe 232 is filled with the inert gas in the outer tube 205 in advance, and the boat 217 is lifted by the boat elevator 115 and transferred into the outer tube 205. The internal temperature is maintained at a predetermined processing temperature.

  After the outer tube 205 is evacuated to a predetermined vacuum state, the boat 217 and the wafer 200 held on the boat 217 are rotated by the rotation shafts 254a and 254b. That is, the wafer 200 held on the boat 217 and the boat 217 by the rotation shaft 254a that rotates about the center axis of the boat 217 and the rotation shaft 254b that is eccentric without using the center axis of the boat 217. Rotate. At the same time, a processing gas is supplied from a gas supply pipe 232. The supplied gas rises in the outer tube 205 and is evenly supplied to the wafer 200.

  The inside of the outer tube 205 during the low pressure CVD process is exhausted through the exhaust pipe 231 and the pressure is controlled by the APC 242 so that a predetermined vacuum is obtained, and the low pressure CVD process is performed for a predetermined time.

  When the reduced-pressure CVD process is completed in this manner, the process proceeds to the reduced-pressure CVD process for the next wafer 200, so that the gas in the outer tube 205 is replaced with an inert gas and the pressure is set to normal pressure. Thereafter, the boat 217 is lowered by the boat elevator 115, and the boat 217 and the processed wafer 200 are taken out from the outer tube 205. The processed wafer 200 on the boat 217 taken out from the outer tube 205 is replaced with an unprocessed wafer 200, and is again raised into the outer tube 205 in the same manner as described above to perform a low pressure CVD process.

As an example, the processing conditions to be processed in the CVD processing furnace of the present embodiment are as follows: in the formation of a silicon nitride film, the processing chamber temperature is 300 to 900 ° C., and the gas species supply amount is SiCl ₂ H ₂ (dichlorosilane). , NH ₃ (ammonia), and the processing pressure is 5 to 260 Pa. The processing pressure is maintained for a predetermined time under conditions selected from the processing chamber temperature and the processing pressure. For example, the processing is performed at a processing chamber temperature of 300 ° C. and a processing pressure of 5 Pa for a predetermined time. In addition, as a gas species, in the formation of a silicon nitride film, as a silicon source, SiH ₄ , SiCl ₂ H ₂ , Si ₂ H ₆ , SiCl ₃ H, SiCl ₄ , BTBAS, HCD (Si ₂ H ₆ ), HSi Either (OC ₂ H ₅ ) ₃ or TEOS is selected from NH ₃ , N, N ₂ O, NO, NO ₂ , or H ₂ NNH ₂ as the nitrogen source. In the formation of silicon oxide film, the gas species are SiH ₄ , SiCl ₂ H ₂ , Si ₂ H ₆ , SiCl ₃ H, SiCl ₄ , BTBAS, HCD (Si ₂ H ₆ ), HSi (OC ₂ H ₅ ) ₃ , TEOS, and the nitrogen source is selected from O ₃ , NO, NO ₂ , and N ₂ O. In the formation of the Poly film, the gas species are SiH ₄ , SiCl ₂ H ₂ , Si ₂ H ₆ , SiCl ₃ H, SiCl ₄ , BTBAS, HCD (Si ₂ H ₆ ), HSi (OC ₂ ) as a silicon source. One of H ₅ ) ₃ and TEOS is selected from PH ₃ , B ₂ H ₆ , BCl ₃ , and AsH ₃ as a doping source. In addition, the present invention can also be applied to Ta ₂ O ₅ , TiN, Al ₂ O ₃ , HfO _{2 and the} like. If the rotation shaft 254 b is provided so as to rotate about the central axis of the outer tube 205, the inner tube 204, or the heater 207, the temperature distribution can be made more uniform over the entire surface of the wafer 200. Similarly, the gas distribution can be made more uniform over the entire surface of the wafer 200.

BRIEF DESCRIPTION OF THE DRAWINGS It is a conceptual diagram which shows the motion of the boat of the vertical type substrate processing apparatus by embodiment of this invention, (a) is a conceptual diagram which shows the state made to rotate the eccentric shaft, rotating the boat center axis, (b). Is a hypocycloid curve showing the locus of point q in (a). In the vertical substrate processing apparatus, it is a conceptual diagram showing the state of the temperature distribution of the wafer when the boat is rotated about the central axis and combined with the rotation. In a vertical substrate processing apparatus, it is a conceptual diagram which shows the state from which the clearance of a wafer and a reaction tube differs by rotating a boat by a central axis, (a) is a state with a 0 degree rotation angle of a boat, (b) is a boat The rotation angle of 180 degrees is shown. FIG. 4 is a transverse cross-sectional view of FIG. 3, where (a) shows a state where the rotation angle of the boat is 0 degrees, and (b) shows a state where the rotation angle of the boat is 180 degrees. In the vertical substrate processing apparatus, when the clearance between the wafer and the reaction tube is different, it is a conceptual diagram showing a state of performing a combined rotational motion in which a central axis rotational motion and an eccentric shaft rotational motion are added. The conceptual diagram which shows a state, (b) is a hypocycloid curve which shows the locus | trajectory of q point of (a). It is a schematic longitudinal cross-sectional block diagram of a general vertical substrate processing apparatus. FIG. 7 is a cross-sectional view of the vertical substrate processing apparatus shown in FIG. 6 and is a conceptual diagram showing a state where a boat is rotated. FIG. 7 is a conceptual diagram showing a temperature distribution of a wafer when a reaction tube is rotated about a central axis in the vertical substrate processing apparatus shown in FIG. 6. It is a block diagram of the vertical reduced pressure CVD processing furnace applied to this invention.

Explanation of symbols

1 reaction tube 2 boat 3 wafer 4 gas 5 heater 6 central axis 10 vertical substrate processing apparatus

Claims (1)

A processing chamber for performing desired processing on the substrate while holding the substrate by the substrate holding means;
Heating means for heating the inside of the processing chamber;
A first rotation mechanism for rotating the substrate holding means about the central axis of the substrate holding means;
A second rotation mechanism that rotates the first rotation mechanism together with the substrate holding means with a position eccentric from the center axis of the substrate holding means;
A substrate processing apparatus specially equipped with:

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