CN102751181A - 用于在晶片基材上沉积来自于工艺气体的材料层的方法和装置 - Google Patents

用于在晶片基材上沉积来自于工艺气体的材料层的方法和装置 Download PDF

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CN102751181A
CN102751181A CN2012101099373A CN201210109937A CN102751181A CN 102751181 A CN102751181 A CN 102751181A CN 2012101099373 A CN2012101099373 A CN 2012101099373A CN 201210109937 A CN201210109937 A CN 201210109937A CN 102751181 A CN102751181 A CN 102751181A
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CN102751181B (zh
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G·布伦宁格
A·艾格纳
C·哈格尔
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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Abstract

用于在晶片基材上沉积来自于工艺气体的材料层的装置，所述装置包含：反应室，其由上圆顶、下圆底和侧壁定界；基座，其在材料层沉积过程中支撑所述晶片基材；环绕基座的预热环；内衬，所述预热环被支撑在其中心位置，并在所述中心位置在预热环和基座之间有一致宽度的间隙；和在内衬和预热环之间的定距物，所述定距物保持预热环在中心位置和在预热环和内衬之间提供间距Δ。

Description

用于在晶片基材上沉积来自于工艺气体的材料层的方法和装置
技术领域
本发明涉及用于在晶片基材(substrate wafer)上沉积来自于工艺气体(process gas)的材料层的装置和使用所述装置的方法。
本发明特别涉及通过化学蒸汽沉积(CVD)来沉积材料层的装置，例如用于在由半导体材料例如硅组成的晶片基材上沉积外延层的装置。
背景技术
在晶片基材上沉积来自于工艺气体的材料层的装置的基本结构是已知和明显的，例如，WO 2007/050309A1所公开的。相应地，这种装置包含由上圆顶、下圆底和侧壁定界的反应室。在反应室之上和之下都配置辐射加热系统，并在材料膜沉积过程中产生足够的热量以使得导向晶片基材上的工艺气体被活化并且使得在晶片基材的表面形成从工艺气体成分产生的材料层。所述晶片基材由被预热环环绕的基座支撑。所述预热环靠在作为反应室侧壁的一部分的内衬上。预热环有帮助加热导向晶片基材的工艺气体的功用。在侧壁上设置进料口和出料口，由此进行工艺气体的进料和由其产生的废气的排出。
JP2006049503A2讨论了用于在由硅组成的半导体晶片上沉积外延膜的装置。所述装置有如上所述的基本构造并在反应室侧壁上还设置有另外的进料口和出料口。所述另外的进料口和出料口用于引入吹扫气体到反应室内基座下面的空间中并从所述空间排出吹扫气体。根据JP2006049503A2的说明书，气态化合物可以通过预热环和基座之间的间隙到达增长中的外延层，并改变在半导体晶片边缘区域的外延层的电阻率。为了防止这种“自掺杂”效应，JP2006049503A2提议封上所述间隙。
发明内容
本发明的发明者发现，当使用大体上如WO 2007/050309A1或JP2006049503A2中所描述的装置那样配备的装置时，需要考虑所存在的一些问题。
这是因为存在这种风险：由硅组成的外延沉积层的电阻率在晶片基材的直径方向上的径向分布变得明显不对称。理想地，所述分布是对称的或至少是几乎对称的。
此外，可预料的是颗粒会污染沉积的材料层到比较高的程度。
所以，本发明的目的是提供避免所述问题的解决方案。
所述目的通过用于在晶片基材上沉积来自于工艺气体的材料层的装置实现，所述装置包含：
反应室，其由上圆顶、下圆底和侧壁定界；
基座，其在材料层沉积过程中支撑所述晶片基材；
环绕基座的预热环；
内衬，所述预热环被支撑在其中心位置，并在所述中心位置预热环和基座之间有一致宽度的间隙；和
在内衬和预热环之间的定距物，所述定距物保持预热环在中心位置和在预热环和内衬之间提供间距Δ。
在晶片基材上沉积材料层的过程中，所述基座和晶片基材绕着它们的中心旋转。与此同时，所述预热环应保持在中心位置不参与该旋转运动。发明者发现上述的问题产生于如下的事实：在沉积过程的开始阶段，所述预热环在所述工艺过程中以非可控的方式离开中心位置，原因是在预热环和内衬之间由于热膨胀产生的径向相对运动，所述相对运动是由于预热环材料和内衬材料的热膨胀性能的不同引起的。
首先，在内衬上预热环的位移有如下效果：预热环和基座之间的间隙宽度不像预热环保持在中心位置的情况下那样保持一致。在沉积过程中间隙宽度沿着基座的外围开始波动。在间隙较宽的地方“自掺杂”效应增强，因为在这些位置更多气体可以通过间隙到增长中的材料层。
其次，在内衬上预热环的位移有如下效果：颗粒因摩擦而产生，并传到沉积的材料层而污染该层。预热环的位移甚至会有使预热环和基座互相接触的效果，这会加剧颗粒的形成。因此要小心地确保预热环和基座之间的间隙有至少2mm的宽度。然而，这样的间隙宽度增进了上述的“自掺杂”效果。
为了避免上述问题，本发明要求保护的装置具有间隔于内衬和预热环之间的定距物，所述定距物使得预热环不受其热膨胀和内衬热膨胀的影响而保持在中心位置，并产生预热环和内衬之间的间隔Δ。这样就完全或几乎完全防止了预热环和内衬的直接接触。由于缺少接触，在材料膜沉积过程中因热膨胀所致的预热环和内衬之间的径向相对运动不再导致颗粒的形成。
所述装置的基座和预热环优选由WO 2007/050309A1中所描述的适合的材料组成，特别优选由碳化硅组成。所述预热环优选地具有WO2007/050309A1中所描述的适合的形状。
所述装置的上圆顶、下圆底和内衬由能传达IR辐射的材料组成，优选的是石英。
根据本发明的一个实施方式，所述定距物通过预热环和内衬的合适构型而形成。这种构型可以例如存在于有楔形凸出物的预热环中，所述凸出物置于所述内衬的槽中，其中凸出物的开度角比所述槽的开度角大。
根据本发明一个优选的实施方式，所述定距物通过滑球形成，所述滑球将预热环保持在内衬上中心位置并与内衬有特定距离。基于这个实施方式的实施例，并参考附图，在下文对本发明作更详细的解释。
附图说明
图1示出具备本发明所述特征的反应室。
图2示出所述基座、预热环和内衬的俯视图。
图3示出本发明特征的详细视图。
图4示出基于实施例和对比例，在硅晶片上外延沉积的硅层的电阻率的径向分布。
图5和图6示出颗粒测量的结果，该测量在有外延沉积的硅层的硅晶片上进行。
具体实施方式
图1示出具有在晶片基材上沉积来自于工艺气体的材料层的装置的典型特征并包含本发明的特征的反应室。所述图示的特征包括上圆顶1，下圆底2和侧壁3。所述晶片基材4由被预热环6环绕的基座5支撑。所述预热环6靠在属于反应室侧壁3的一部分的内衬7上。滑球8分布于预热环6的边缘区域在预热环6和内衬7之间起定距物的作用。滑球优选由碳化硅组成，且滑球数量优选为3到8，特别优选为4。
图2示出基座5、预热环6和内衬7的俯视图，并且示出了4个滑球8在预热环6圆周上的位置。
图3明显看出滑球8部分嵌入预热环6和内衬7中。在各情况中滑球8卧于径向延伸拉长的洞9中，使得预热环6保持在中心位置不受其自身热膨胀和内衬7的热膨胀的影响且不与安置其下的内衬7接触。
在与滑球8邻接的区域内的预热环6和内衬7之间的间距Δ优选不小于0.01mm和不大于2mm。如果间距过小，因摩擦产生颗粒的风险增大。如果间距过大，基座下方空间内的气体引起“自掺杂”和/或沉积在反应器壁上的风险增大。
为了消除“自掺杂”效应，预热环6和基座5之间的间隙D有一致的优选不小于0.1mm和不大于2mm的宽度，特别优选不大于1mm。若间隙D小于0.1mm，预热环6可能因热膨胀与基座5接触。若间隙D大于2mm，会发生显著的“自掺杂”效应。
预热环6的外侧边界和与所述边界相对的内衬7的内侧边界之间的间距d优选地不小于0.1mm和不大于1.9mm。若间隙过小，因热膨胀内衬7和预热环接触的风险增大。
在由硅组成的半导体晶片上提供由硅组成的外延沉积层的情况下，比较各种性质，例如沉积层电阻率的径向分布或在沉积层上所检测到的颗粒数目，本发明的有利效果是明显的。
图4显示了基于实施例和对比例，在硅晶片上外延沉积的硅层电阻率的径向分布。该图显示了在各情况下沿着硅晶片直径的径向的位置P的五个测量点和相应的电阻率R。图中如圆圈状的测量数据点代表对比例的硅晶片，所述硅晶片在没有本发明的定距物的装置中被沉积。该电阻率的径向分布显示了明显的不对称性且在硅晶片的边缘区域与硅晶片中心区域相比电阻率显著下降。相比之下，由偏菱形状的测量数据点显示，根据本发明实施例的半导体晶片的外延沉积层的电阻率的径向分布是几乎对称且几乎一致的。实施例的硅晶片在含有本发明所述的定距物的装置中与对比例的硅晶片在相同的工艺条件下被沉积。
图5和图6显示了颗粒测量的结果，所述颗粒测量在有外延沉积硅层的硅晶片上进行。图中显示了由散射光测量法在对比例和实施例中各25块硅晶片上得到的平面图，也显示了颗粒的位置。实施例的硅晶片(图6所示)含有显著较少量的污染颗粒，而且不像对比例的硅晶片那样在与预热环邻接的边缘区域有颗粒累积。

Claims (7)

1.用于在晶片基材上沉积来自于工艺气体的材料层的装置，所述装置包含：
反应室，其由上圆顶、下圆底和侧壁定界；
基座，其在材料层沉积过程中支撑所述晶片基材；
环绕基座的预热环；
内衬，所述预热环被支撑在其中心位置，并在所述中心位置预热环和基座之间具有一致宽度的间隙；和
在内衬和预热环之间的定距物，所述定距物保持预热环在中心位置和在预热环和内衬之间提供间距Δ。
2.权利要求1所述的装置，其中所述间隙具有一致的不小于0.1mm和不大于2mm的宽度。
3.权利要求1或2所述的装置，其中预热环的外侧边界和与所述边界相对的所述内衬的内侧边界之间的间距优选地不小于0.1mm和不大于1.9mm。
4.权利要求1-3中任一项所述的装置，其中在与所述定距物邻接的区域内的预热环和内衬之间的间距Δ不小于0.01mm和不大于2mm。
5.权利要求1-4中任一项所述的装置，其中用滑球形成所述定距物，其中滑球分布于预热环的边缘区域且部分嵌入于预热环和内衬中。
6.在晶片基材上沉积来自于工艺气体的材料层的方法，所述方法包括：
在权利要求1-5中任一项所述的装置中，将工艺气体从预热环上导向由基座支撑的晶片基材上。
7.权利要求6所述的方法，其中在沉积过程中晶片基材被保持在中心位置，在所述的中心位置在预热环和基座之间有一个间隙，且所述间隙具有一致的不小于0.1mm和不大于2mm的宽度。
CN201210109937.3A 2011-04-18 2012-04-13 用于在晶片基材上沉积来自于工艺气体的材料层的方法和装置 Expired - Fee Related CN102751181B (zh)

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