CN110629199B - 外延硅晶圆的制造方法 - Google Patents

外延硅晶圆的制造方法 Download PDF

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CN110629199B
CN110629199B CN201910554161.8A CN201910554161A CN110629199B CN 110629199 B CN110629199 B CN 110629199B CN 201910554161 A CN201910554161 A CN 201910554161A CN 110629199 B CN110629199 B CN 110629199B
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silicon wafer
susceptor
purge gas
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山本纯
松田信也
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GlobalWafers Japan Co Ltd
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Abstract

提供能够减少外延膜中的碳浓度的外延硅晶圆的制造方法。在以载置硅晶圆的基座为界划分上部空间和下部空间而前述上部空间和下部空间经由既定的间隙连通的反应炉内、在前述硅晶圆的表面形成外延膜的外延硅晶圆的制造方法中，在前述反应炉内的上部空间形成沿硅晶圆的上表面沿横向流动的工艺气体的气流，并且在前述下部空间形成从前述基座的下方向该基座流向上方的主吹扫气体的气流，将在前述上部空间流动的工艺气体的流量设为100的情况下，使在前述下部空间流动的主吹扫气体流量为1.0~1.5，至少将前述上部空间的气压控制成大气压±0.2kPa内。

Description

外延硅晶圆的制造方法
技术领域
本发明涉及外延硅晶圆的制造方法，特别涉及能够将形成的外延膜中的碳浓度(强度)减少的外延硅晶圆的制造方法。
背景技术
例如，将电子和空穴的运载作为器件的驱动原理利用的IGBT(绝缘栅门极晶体管)系的器件对外延膜中的低碳浓度化的要求较高。即，制造外延硅晶圆时，抑制碳成分向外延膜中进入成为重要的要求事项。
作为外延膜中的碳浓度变高的原因，考虑在外延膜的形成途中，工艺气体与腔内的部件接触从而含有碳成分，其进入外延膜中。
进而，考虑到，由于在支承晶圆的基座的下方流动的吹扫气体接触炉内部件而含有碳成分，其卷起至基座上方，由此晶圆的成膜成分中引入碳。
即，可以说，炉内的气流的控制较大地影响外延膜中的碳浓度。
形成外延膜时，作为控制腔内的气流的尝试，例如有日本特开2007-326761号公报所公开的气相成长方法。日本特开2007-326761号公报所公开的气相成长方法中，如图6所示，在形成有工艺气体的气体导入口201及气体排出口202的反应炉200内，在载置于基座205的晶圆W上形成外延膜时，沿基座205正面侧导入工艺气体，且向基座205的背面侧以沿着支承基座205的旋转轴206的方式导入吹扫气体。
并且，基座正面侧的工艺气体从基座正面侧气体排出口202排出，基座背面侧的吹扫气体从基座背面侧所具备的吹扫气体排出口207排出。由此，呈不存在基座正面侧和背面侧处的压力差的状态。
在基座205的周缘部，形成有将以基座205为界的上下空间连通的间隙208，但基于压力差的气流被限制，几乎不会产生。因此，能够消除吹扫气体向上部空间流出而由吹扫气体产生的外延形成膜的污染。
若这样地设置成借助基座205将腔内的空间上下分割的结构，则腔内的气流的控制变得容易，容易控制在晶圆W上形成的外延膜中所含的碳浓度。
但是，在日本特开2007-326761号公报所公开的气相成长方法中，关于在基座上方流动的工艺气体和在基座下方流动的吹扫气体的气流的气体平衡未作考虑。
因此，在相对于工艺气体的流量的吹扫气体的流量比大于既定值的情况下，从前述间隙208向上部空间流入的吹扫气体变多，有产生含有碳成分的气氛的卷起的可能。结果，有形成于晶圆W的外延膜中的碳浓度变高的问题。
发明内容
本发明是基于如前所述的情况而作出的，其目的在于，在将外延膜形成于硅单晶体基板上的外延硅晶圆的制造方法中，提供一种能够减少前述外延膜中的碳浓度的外延硅晶圆的制造方法。
为了解决前述问题的本发明的外延硅晶圆的制造方法为，在以载置硅晶圆的基座为界划分上部空间和下部空间而前述上部空间和下部空间经由既定的间隙连通的反应炉内，在前述硅晶圆的表面形成外延膜，其特征在于，在前述反应炉内的上部空间，形成沿硅晶圆的上表面沿横向流动的工艺气体的气流，并且，在前述下部空间，形成从前述基座的下方向该基座流向上方的主吹扫气体的气流，将流向前述上部空间的工艺气体的流量设为100的情况下，使在前述下部空间流动的主吹扫气体流量为1.0~1.5，至少将前述上部空间的气压控制为大气压±0.2kPa内。
另外，优选的是，在沿前述基座的外周配置的环状的预加热环的内周缘部和前述基座的外周缘部之间形成前述间隙，将前述基座的高度设定为前述预加热环的高度的＋0mm~-3mm以内。
此外，优选的是，形成从前述反应炉的作为硅晶圆的搬入搬出口（ゲート）的狭缝流向前述下部空间的狭缝吹扫气体的气流，在将流向前述上部空间的工艺气体的流量设为100的情况下，使在前述下部空间流动的前述主吹扫气体及前述狭缝吹扫气体的流量为20.5以下。
若根据这样的结构，通过控制在反应炉的上部空间流动的工艺气体的流量和在下部空间流动的吹扫气体的流量的比例，抑制碳气氛的卷起，能够减少外延膜中的碳浓度。
附图说明
图1是能够应用本发明的外延硅晶圆的制造方法的CVD(化学气相成长)装置的俯视图。
图2是图1的一工艺腔的B-B向视截面图。
图3是图1的一工艺腔的A-A向视截面图。
图4是表示本发明的实施例及比较例的结果的表。
图5是表示本发明的其他实施例及比较例的结果的图表。
图6是实施以往的化学气相成长方法的工艺腔的剖视图。
具体实施方式
以下，对本发明的外延硅晶圆的制造方法进行说明。图1是能够应用本发明的外延硅晶圆的制造方法的CVD(化学气相成长)装置的俯视图。此外，图2是图1的一工艺腔的B-B向视截面图，图3是A-A向视截面图。
如图1所示，CVD装置100具备将多个晶圆暂时保持的缓冲腔101、沿缓冲腔101的外周配置的多个工艺腔102A~102C。
进而，CVD装置100具备配置于缓冲腔101的外周侧的两个加载锁定腔103A、103B和一个冷却腔104。
缓冲腔101在其中具有搬运机器人101a。该搬运机器人101a在加载锁定腔103A、103B和工艺腔102A~102C之间搬运晶圆W。
前述加载锁定腔103A或103B是为了将洁净室气氛和该加载锁定腔103A、103B之前的装置内气氛分开而设置的。
即，若晶圆W被从洁净室内的未图示的晶圆搬运容器向加载锁定腔103A或103B搬入，则腔内被暂时减压，被N2气体吹扫。并且，腔内变为常压后，被搬运机器人101a向工艺腔102A~102C的某一个搬入。
另外，前述冷却腔104在搬运晶圆W的期间为了将其冷却而被使用。
如图2、图3所示，各工艺腔102A~102C在其内部具有外延膜形成室2(以下也仅称作膜形成室2)。该膜形成室2为，圆板状的顶棚部3和蒜臼状的底部4将它们的周缘部借助保持框5支承而形成的空间。前述顶棚部3及底部4例如由石英形成，借助配置于腔上方及下方的卤素灯(未图示)，载置于膜形成室2内部的硅晶圆基板W被加热。
载置硅晶圆基板W的基座6被配置在前述膜形成室2内。该基座6为了与被载置的硅晶圆基板W一同旋转而被旋转轴7从下方支承。膜形成室2的空间以基座6为界被上下地大致二分，形成有上部空间2a和下部空间2b。
如前所述，硅晶圆基板W被载置于基座6上，该硅晶圆基板W的上表面为作为主表面的外延膜的形成面。
如图2所示，在保持框5形成有用于将工艺气体向基座6的上方、即上部空间2a导入的气体导入口5a、在与其相向的相反侧形成的气体排气口5b。
将SiH2Cl2、SiHCl3等的Si源气体(原料气体)用氢气(运载气体)稀释而在其中微量地调配掺杂剂的工艺气体被从前述气体导入口5a向膜形成室2内以沿着硅晶圆基板W的表面向横向流动的方式被供给。该被供给的工艺气体通过硅晶圆基板W的表面，在形成外延膜后被从气体排出口5b向装置外排出。
此外，在保持框5的内周侧安装有圆环状的预加热环11，从其内周缘部隔开既定的间隙10地配置有前述基座6。即，基座6借助预加热环11将周围包围。更详细地说，基座6的周缘部以位于距预加热环11的内周缘部0mm~-3mm的高度的方式配置，由此确定间隙10的尺寸。此外，这样地在预加热环11和基座6处设置高低差，由此得到抑制工艺气体的气流的乱流的效果。此外，基座6由于前述间隙10旋转自如，前述间隙10为将基座6的上部空间2a和下部空间2b连通的连通路。
此外，在下部空间2b，作为吹扫气体的氢(H2)被从旋转轴7的下方导入而朝向基座6流向上方，沿底部4的蒜臼那样的扩展而扩大，通过旋转轴7、基座6的旋转，一部分以卷起漩涡的方式流动。该吹扫气体穿过前述间隙10流向上部空间2a，被从气体排出口5b排出。
此外，如图3所示，在与缓冲腔101的连结部口（連結部ゲート）形成狭缝12，吹扫气体从该狭缝12流向下部空间2b。这是为了防止工艺气体进入狭缝12而对狭缝12造成损伤。
接着，借助这样地构成的CVD装置100，关于相对于硅晶圆基板W形成外延膜的方法，按照一连串的流程进行说明。
首先，若从未图示的晶圆搬运容器例如向加载锁定腔103A搬入硅晶圆基板W，则腔内被暂时减压，被N2气体吹扫。
接着，若加载锁定腔103A内变为常压，则缓冲腔101的搬运机器人101a从加载锁定腔103A接收晶圆W，例如将其载置于工艺腔102B的基座6上。
工艺腔102B中形成被减压的膜形成室2。这里，上部空间2a的气压被控制在大气压±0.2kPa的范围。这是为了抑制作为碳气氛（カーボン雰囲気）的卷起的要因的腔内的工艺气体的流动的乱流。
并且，工艺气体被以既定的流量(30slm~60slm)从气体导入口5a导入，其与晶圆W上表面平行地流动而被从气体排出口5b排出。
另一方面，在下部空间2b，吹扫气体被从旋转轴7的下方的导入口(未图示)导入。被导入的吹扫气体(称作主吹扫气体)流向基座6，沿底部4的蒜臼状的扩展而扩大。并且，穿过预加热环11和基座6之间的间隙10流向上部空间2a，被从气体排出口5b排出。
这里，将在上部空间2a流动的工艺气体的流量设为100的情况下，在下部空间2b流动的吹扫气体流量被控制成1.0~1.5。这是因为，吹扫气体流量的比不足1.0/100的情况下，有腔内被金属污染的可能，在超过1.5/100的情况下，有产生碳气氛的卷起的可能。
此外，既定流量的吹扫气体(也称作狭缝吹扫气体)被从形成于保持框5和缓冲腔101的连结部口的狭缝12流向下部空间2b。
这里，将在上部空间2a流动的工艺气体的流量设为100的情况下，由狭缝吹扫气体和主吹扫气体产生的下部空间2b的流量为20.5以下。由此，能够使基座正反界面区域的压力平衡为上部空间2a的气压＞下部空间2b的气压，由此能够抑制碳气氛向上部空间2a卷起。
通过这样地控制气体的流量，在晶圆W的表面形成碳浓度被控制为较低的外延膜。
如以上所述，根据本发明的实施方式，在借助载置硅晶圆基板W的基座来将腔内大致分割为上部空间2a和下部空间2b的CVD装置中，通过控制在上部空间2a流动的工艺气体的流量和在下部空间2b流动的吹扫气体的流量的比例，抑制碳气氛的卷起，能够减少外延膜中的碳浓度。
关于本发明的外延硅晶圆的制造方法，基于实施例进一步说明。在本实施例中，基于前述实施方式进行以下的实验。
(实验1)
在实验1中，作为装置结构，使用图1至图3所示的CVD装置，为了规定
(1)将腔内上部空间的工艺气体的流量设为100的情况的下部空间的主吹扫气体流量、
(2)腔内气压(炉内压)、
(3)相对于预加热环高度的基座高度、
(4)将腔内上部空间的工艺气体的流量设为100的情况的下部空间的主吹扫气体及狭缝吹扫气体的流量、
的各自的优选的范围，通过实验进行评价。作为具体的评价项目有炉内金属污染、碳气氛的卷起、工艺气流的乱流这三点。
图4的表中表示实施例1~13、及比较例1~14的条件和结果。在图4的表中，炉内金属污染为，测定工艺处理后晶圆的寿命值，将基准值稳定地合格设为○，将与基准值相同而偶尔出现不合格值的情况设为△，将基准值不合格设为×。此外，碳气氛卷起为，测定工艺处理后晶圆的碳强度，将基准值稳定地合格设为○，将基准值相同而偶尔出现不合格值的情况设为△，将基准值不合格设为×。此外，工艺气流的乱流为，测定工艺处理后晶圆的膜厚分布，将基准值稳定地合格设为○，将与基准值相同而偶尔出现不合格值的情况设为△，将基准值不合格设为×。
如图4的表所示，已确认，(1)将腔内上部空间的工艺气体的流量设为100的情况的下部空间的主吹扫气体流量优选为1.0~1.5的范围，(2)腔内气压(炉内压)优选为大气压±0.2kPa的范围，(3)相对于预加热环高度的基座高度优选为0~-3mm的范围，(4)将腔内上部空间的工艺气体的流量设为100的情况的下部空间的主吹扫气体及狭缝吹扫气体的流量优选为1.0~20.5的范围。
(实验2)
在实验2中，在由实验1的结果规定的优选的条件的下，关于相对于腔内下部空间的吹扫流量的外延膜中的PL碳浓度进行评价。
在实施例14中，将腔内上部空间的工艺气体的流量设为100的情况下的下部空间的主吹扫气体流量设为1.25(流量为0.5slm)。此外，腔内气压(炉内压)设为大气压±0.2kPa的范围，相对于预加热环高度的基座高度设为0~-3mm的范围内。在这些条件下，在晶圆上形成外延膜，根据PL(光激发光)测定法测定碳强度。
另一方面，在比较例15中，将腔内上部空间的工艺气体的流量设为100的情况下的下部空间的主吹扫气体流量的比例设为2.5(流量为1slm)。其他条件与实施例14相同，同样根据PL法测定碳强度。
图5的图表表示实施例14及比较例15的结果。在图5的图表中，横轴表示主吹扫气体流量(slm)，纵轴表示碳强度。如图5的图表所示，实施例14的外延膜中的碳强度为4.38，在比较例15中为8.29。即，若根据实施例14，与比较例15相比能够将碳强度减半。
根据以上的实施例的结果，已确认，根据本发明，在形成于晶圆上的外延膜处，与以往相比能够将碳浓度减少。
附图标记说明
2 外延膜形成室
2a 上部空间
2b 下部空间
3 顶棚部
4 底部
5 保持框
5a 气体导入室
5b 气体排气口
6 基座
7 旋转轴
10 间隙
11 预加热环
12 狭缝
102A~102C 工艺腔(反应炉)
W 硅晶圆基板。

Claims (2)

1.一种外延硅晶圆的制造方法，前述外延硅晶圆的制造方法为，在以载置硅晶圆的基座为界划分上部空间和下部空间而前述上部空间和下部空间经由既定的间隙连通的反应炉内，在前述硅晶圆的表面形成外延膜，其特征在于，
在前述反应炉内的上部空间，形成沿硅晶圆的上表面沿横向流动的工艺气体的气流，并且，在前述下部空间，形成从前述基座的下方向该基座流向上方的主吹扫气体的气流，
形成从前述反应炉的作为硅晶圆的搬入搬出口的狭缝流向前述下部空间的狭缝吹扫气体的气流，
将在前述上部空间流动的工艺气体的流量设为100的情况下，使在前述下部空间流动的主吹扫气体流量为1.0~1.5，使在前述下部空间流动的前述主吹扫气体及前述狭缝吹扫气体的流量为20.5以下，
将前述上部空间的气压控制为大气压±0.2kPa内。
2.如权利要求1所述的外延硅晶圆的制造方法，其特征在于，
在沿前述基座的外周配置的环状的预加热环的内周缘部和前述基座的外周缘部之间形成前述间隙，
将前述基座的高度设定为前述预加热环的高度的＋0mm~-3mm以内。
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