JP6998839B2 - エピタキシャルシリコンウェーハの製造方法 - Google Patents
エピタキシャルシリコンウェーハの製造方法 Download PDFInfo
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Description
更には、ウェーハを支持するサセプタの下方を流れるパージガスが炉内部材に触れることによりカーボン成分を含み、それがサセプタ上方まで巻き上がることによってウェーハの成膜成分にカーボンが取り入れられるものと考えられている。
即ち、炉内のガス流の制御が、エピタキシャル膜中のカーボン濃度に大きく影響するといえる。
サセプタ205の周縁部には、サセプタ205を境とする上下空間を連通する隙間208が形成されているが、圧力差に基づくガス流が制限され、殆ど生じないものとなる。したがって、パージガスが上部空間に流出し、パージガスによるエピタキシャル形成膜の汚染を無くすことができる。
そのため、プロセスガスの流量に対するパージガスの流量比が所定値より大きい場合には、前記隙間208より上部空間へのパージガスの流れ込みが多くなり、カーボン成分を含む雰囲気の巻き上げが生じる虞があった。その結果、ウェーハWに形成するエピタキシャル膜中のカーボン濃度が高くなるという課題があった
尚、前記サセプタの外周に沿って配置された環状のプリヒートリングの内周縁部と、前記サセプタの外周縁部との間に前記隙間が形成され、前記サセプタの高さを前記プリヒートリングの高さの+0mm~-3mm以内に設定することが望ましい。
また、前記反応炉におけるシリコンウェーハの搬入出ゲートとなるスリットから、前記下部空間に流れるスリットパージガスの気流を形成し、前記上部空間に流れるプロセスガスの流量を100とした場合、前記下部空間を流れる前記メインパージガス及び前記スリットパージガスの流量の比を20.5以下とすることが望ましい。
更に、CVD装置100は、バッファチャンバ101の外周側に配置された2基のロードロックチャンバ103A、103Bと、1基の冷却チャンバ104とを備える。
即ち、クリーンルーム内の図示しないウェーハ搬送コンテナからウェーハWがロードロックチャンバ103A、又は103Bに搬入されると、チャンバ内は一旦減圧され、N2ガスによりパージされる。そして、チャンバ内が常圧になった後、搬送ロボット101aによりプロセスチャンバ102A~102Cのいずれかに搬入されるようになっている。
尚、前記冷却チャンバ104は、ウェーハWを搬送する間にこれを冷却するために使用される。
このサセプタ6は、載置されたシリコンウェーハ基板Wとともに回転すべく、回転軸7により下方から支持されている。膜形成室2の空間は、サセプタ6を境として上下に略二分され、上部空間2aと下部空間2bとが形成されている。
前記のようにサセプタ6上にシリコンウェーハ基板Wが載置され、このシリコンウェーハ基板Wの上面が主表面としてのエピタキシャル膜の形成面となる。
前記ガス導入口5aからは、膜形成室2内にSiH2Cl2やSiHCl3などのSiソースガス(原料ガス)を水素ガス(キャリアガス)で希釈し、それにドーパントを微量に配合したプロセスガスが、シリコンウェーハ基板Wの表面に沿って横方向に流れるよう供給される。この供給されたプロセスガスは、シリコンウェーハ基板Wの表面を通過して、エピタキシャル膜の形成後、ガス排出口5bより装置外に排出される。
まず、図示しないウェーハ搬送コンテナから例えばロードロックチャンバ103Aにシリコンウェーハ基板Wが搬入されると、チャンバ内は一旦減圧され、N2ガスによりパージされる。
プロセスチャンバ102Bでは減圧された膜形成室2が形成される。ここで、上部空間2aの気圧は、大気圧±0.2kPaの範囲に制御される。これは、カーボン雰囲気の巻き上げの要因となるチャンバ内のプロセスガスの流れの乱れを抑制するためである。
そして、ガス導入口5aからは、所定の流量(30slm~60slm)でプロセスガスが導入され、これがウェーハW上面に平行に流れてガス排出口5bから排出される。
ここで、上部空間2aを流れるプロセスガスの流量を100とした場合、スリットパージガスとメインパージガスとによる下部空間2bにおける流量は20.5以下となされる。それにより、サセプタ表裏界面領域における圧力バランスを、上部空間2aの気圧>下部空間2bの気圧とすることができ、それにより上部空間2aへのカーボン雰囲気の巻き上げを抑制することができる。
実験1では、装置構成として図1乃至図3に示したCVD装置を用い、
(1)チャンバ内上部空間におけるプロセスガスの流量を100とした場合の下部空間におけるメインパージガス流量の比率、
(2)チャンバ内気圧(炉内圧)、
(3)プリヒートリング高さに対するサセプタ高さ、
(4)チャンバ内上部空間におけるプロセスガスの流量を100とした場合の下部空間におけるメインパージガス及びスリットパージガスの流量の比率、
のそれぞれの好ましい範囲を規定するために、実験で評価を行った。具体的な評価項目としては、炉内金属汚染、カーボン雰囲気の巻き上げ、プロセスガス流の乱れ、の3点である。
実験2では、実験1の結果により規定される好ましい条件の下、チャンバ内下部空間のパージ流量に対するエピタキシャル膜中のPLカーボン濃度について評価を行った。
実施例14では、チャンバ内上部空間におけるプロセスガスの流量を100とした場合の下部空間におけるメインパージガス流量の比率を1.25(流量は0.5slm)とした。また、チャンバ内気圧(炉内圧)は、大気圧±0.2kPaの範とし、プリヒートリング高さに対するサセプタ高さは、0~-3mmの範囲内とした。これらの条件下で、ウェーハ上にエピタキシャル膜を形成し、PL(フォトルミネッセンス)測定法によりカーボン強度を測定した。
2a 上部空間
2b 下部空間
3 天井部
4 底部
5 保持フレーム
5a ガス導入室
5b ガス排気口
6 サセプタ
7 回転軸
10 隙間
11 プリヒートリング
12 スリット
102A~102C プロセスチャンバ(反応炉)
W シリコンウェーハ基板
Claims (3)
- シリコンウェーハが載置されるサセプタを境に上部空間と下部空間とに区画され、前記上部空間と下部空間とが所定の隙間を介して連通される反応炉内において、前記シリコンウェーハの表面に、エピタキシャル膜を形成するエピタキシャルシリコンウェーハの製造方法であって、
前記反応炉内の上部空間には、シリコンウェーハの上面に沿って横方向に流れるプロセスガスの気流を形成しつつ、前記下部空間には、前記サセプタの下方から該サセプタに向かって上方へ流れるメインパージガスの気流を形成し、
前記上部空間に流れるプロセスガスの流量を100とした場合、前記下部空間を流れるメインパージガス流量の比を1.0~1.5とし、
少なくとも前記上部空間の気圧を大気圧±0.2kPa内に制御することを特徴とするエピタキシャルシリコンウェーハの製造方法。 - 前記サセプタの外周に沿って配置された環状のプリヒートリングの内周縁部と、前記サセプタの外周縁部との間に前記隙間が形成され、
前記サセプタの高さを前記プリヒートリングの高さの+0mm~-3mm以内に設定することを特徴とする請求項1に記載されたエピタキシャルシリコンウェーハの製造方法。 - 前記反応炉におけるシリコンウェーハの搬入出ゲートとなるスリットから、前記下部空間に流れるスリットパージガスの気流を形成し、
前記上部空間に流れるプロセスガスの流量を100とした場合、前記下部空間を流れる前記メインパージガス及び前記スリットパージガスの流量の比を20.5以下とすることを特徴とする請求項1または請求項2に記載されたエピタキシャルシリコンウェーハの製造方法。
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