TWI696721B - 磊晶矽晶圓的製造方法 - Google Patents

磊晶矽晶圓的製造方法 Download PDF

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TWI696721B
TWI696721B TW108121621A TW108121621A TWI696721B TW I696721 B TWI696721 B TW I696721B TW 108121621 A TW108121621 A TW 108121621A TW 108121621 A TW108121621 A TW 108121621A TW I696721 B TWI696721 B TW I696721B
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silicon wafer
flow rate
lower space
purge gas
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山本純
松田信也
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日商環球晶圓日本股份有限公司
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Abstract

本發明提供一種可降低磊晶膜中之碳濃度之磊晶矽晶圓的製造方法。本發明之磊晶矽晶圓的製造方法係於以載置有矽晶圓之晶座為邊界而劃分為上部空間與下部空間且前述上部空間與前述下部空間經由預定間隙而連通的反應爐內，在前述矽晶圓之表面形成磊晶膜；一邊於前述反應爐內之上部空間形成沿矽晶圓之上表面橫向地流動之製程氣體之氣流，一邊於前述下部空間形成從前述晶座之下方朝向該晶座而向上方流動之主吹掃氣體之氣流；於將前述上部空間內流動之製程氣體之流量設為100時，將流經前述下部空間之主吹掃氣體流量比設為1.0至1.5；至少將前述上部空間之氣壓控制於大氣壓±0.2kPa內。

Description

磊晶矽晶圓的製造方法
本發明係關於一種磊晶矽晶圓的製造方法，尤其係關於一種可降低所形成之磊晶膜中之碳濃度(強度)之磊晶矽晶圓的製造方法。
例如，對於利用電子與電洞之載子作為裝置之驅動原理的IGBT(Insulated Gate Bipolar Transistor；絕緣閘雙極性電晶體)系的裝置而言，對於磊晶膜中之低碳濃度的要求非常高。亦即，於製造磊晶矽晶圓時，抑制碳成分向磊晶膜中的取入是重要的要求事項。
作為磊晶膜中之碳濃度增高之原因，認為是在磊晶膜之形成中途之中，製程氣體因與腔室內之構件相接而包含碳成分，該碳成分被取入至磊晶膜中。
進而認為，流經支持晶圓之晶座之下方之吹掃氣體因與爐內構件接觸而包含碳成分，藉由該碳成分被捲起至晶座上方而碳被吸入至晶圓之成膜成分。
亦即，可以說爐內之氣流之控制較大地影響了磊晶膜中之碳濃度。
當形成磊晶膜時，作為控制腔室內之氣流之嘗試，例如有日本專利特開2007-326761號公報中揭示之氣相成長方法。日本專利特開2007-326761號公報中揭示之氣相成長方法中，如圖5所示，當於形成有製程氣體之氣體導入口201及氣體排出口202之反應爐200內之中，在載置於晶座205之矽晶圓W上形成磊晶膜時，一邊沿著晶座205表面側導入製程氣體，一邊向晶座205之背面側以沿著支持晶座205之旋轉軸206的方式導入吹掃氣體。
然後，晶座表面側之製程氣體從晶座表面側氣體排出口202排出，晶座背面側之吹掃氣體從設置於晶座背面側之吹掃氣體排出口207排出。藉此，成為晶座表面側與背面側無壓力差之狀態。
雖然於晶座205之周緣部形成有連通以晶座205為邊界之上下空間的間隙208，但基於壓力差之氣流受到限制且幾乎不會產生。因此，吹掃氣體流出至上部空間，可消除吹掃氣體引起之磊晶形成膜之污染。
若如此設為腔室內之空間被晶座205分割為上下的構成，則容易進行腔室內之氣流之控制，且容易控制形成於矽晶圓W上之磊晶膜中所含的碳濃度。
然而，在日本專利特開2007-326761號公報中所揭示之氣相成長方法中，沒有考慮流經晶座上方之製程氣體與流經晶座下方之吹掃氣體之氣流的氣體平衡。
因此，當吹掃氣體之相對於製程氣體之流量的流量比大於預定值時，從前述間隙208流入上部空間之吹掃氣體增加，從而有產生含碳成分之環境氣體之捲起的疑慮。其結果，存在形成於矽晶圓W之磊晶膜中之碳濃度增加之課題。
本發明基於前述情況完成，目的在於提供一種在矽單晶基板上形成磊晶膜之磊晶矽晶圓的製造方法中，可降低前述磊晶膜中之碳濃度的磊晶矽晶圓的製造方法。
為了解決前述課題，本發明之磊晶矽晶圓的製造方法，係於以載置有矽晶圓之晶座為邊界而劃分為上部空間與下部空間且前述上部空間與前述下部空間經由預定間隙而連通的反應爐內，在前述矽晶圓之表面形成磊晶膜；一邊於前述反應爐內之上部空間形成沿矽晶圓之上表面橫向地流動之製程氣體之氣流，一邊於前述下部空間形成從前述晶座之下方朝向該晶座而向上方流動之主吹掃氣體之氣流；於將前述上部空間內流動之製程氣體之流量設為100時，將流經前述下部空間之主吹掃氣體流量比設為1.0至1.5；至少將前述上部空間之氣壓控制於大氣壓±0.2kPa內。
再者，期望是於沿著前述晶座之外周配置之環狀之預熱環之內周緣部與前述晶座之外周緣部之間形成有前述間隙；將前述晶座之高度設定於前述預熱環之高度之+0mm至-3mm以內。
而且，期望是形成從前述反應爐中之成為矽晶圓之搬入搬出閘極之狹縫向前述下部空間流動之狹縫吹掃氣體之氣流；於將在前述上部空間流動之製程氣體之流量設為100時，流經前述下部空間之前述主吹掃氣體及前述狹縫吹掃氣體之流量比設為20.5以下。
根據這種構成，控制流經反應爐之上部空間之製程氣體之流量與流經下部空間之吹掃氣體之流量之比率，藉此可抑制碳環境氣體之捲起，且可降低磊晶膜中之碳濃度。
以下，對本發明之磊晶矽晶圓的製造方法進行說明。圖1係能夠應用於本發明之磊晶矽晶圓的製造方法之CVD(化學氣相成長)裝置之俯視圖。而且，圖2係圖1之一製程室之B-B箭頭剖面圖，圖3係A-A箭頭剖面圖。
如圖1所示，CVD裝置100具備暫時保持複數個晶圓之緩衝室101以及沿著緩衝室101之外周配置之複數個製程室102A至102C。
進而，CVD裝置100具備配置於緩衝室101之外周側之兩個鎖定室(load lock chamber)103A、103B以及一個冷卻室104。
緩衝室101之中具有搬運機器人(robot)101a。前述搬運機器人101a於鎖定室103A、103B與製程室102A至102C之間搬送矽晶圓W。
前述鎖定室103A或103B是為了將無塵室環境氣體與該鎖定室103A、103B中之先前的裝置內環境氣體分開而設置。
亦即，當矽晶圓W從無塵室內之未圖示之晶圓搬送容器搬入至鎖定室103A或103B時，腔室內暫時減壓，藉由N2 氣體進行吹掃。然後，當腔室內成為常壓後，藉由搬運機器人101a搬入至製程室102A至102C中之任一者。
再者，前述冷卻室104係用於在搬送矽晶圓W期間將矽晶圓W冷卻。
如圖2、圖3所示，各製程室102A至102C係於其內部具有磊晶膜形成室2(以下，亦簡稱為膜形成室2)。前述膜形成室2係圓板狀的頂部3與研缽狀的底部4藉由保持框架5支持圓板狀頂部3與研缽狀底部4之周緣部而形成的空間。前述頂部3以及前述底部4例如係由石英而形成，且藉由配置於腔室上方及下方之鹵素燈(未圖示)來加熱載置於膜形成室2內部之矽晶圓W。
於前述膜形成室2內配置有供矽晶圓W載置之晶座6。為了隨所載置之矽晶圓W一起旋轉，前述晶座6係藉由旋轉軸7而從下方被支持。膜形成室2之空間以晶座6為邊界上下大致分為一半，且形成有上部空間2a與下部空間2b。
如前述般在晶座6上載置矽晶圓W，前述矽晶圓W之上表面成為作為主表面之磊晶膜之形成面。
如圖2所示，於保持框架5形成有用於向晶座6之上方，亦即向上部空間2a導入製程氣體之氣體導入口5a、以及形成於與前述氣體導入口5a對向之相反側的氣體排出口5b。
從前述氣體導入口5a將製程氣體以沿著矽晶圓W之表面橫向地流動的方式供給，前述製程氣體係於膜形成室2內用氫氣(載氣)稀釋SiH2 Cl2 或SiHCl3 等Si源氣體(原料氣體)並向其中微量調配摻雜劑而成。前述供給的製程氣體通過矽晶圓W之表面，並在形成磊晶膜之後，從氣體排出口5b向裝置外排出。
而且，於保持框架5之內周側安裝有圓環狀之預熱環11，從預熱環11的內周緣部隔開預定間隙10配置有前述晶座6。亦即，藉由預熱環11而包圍晶座6的周圍。更詳細而言，以晶座6之周緣部位於從預熱環11之內周緣部算起0mm至-3mm之高度的方式配置，藉此決定間隙10之尺寸。而且，藉由如此對預熱環11與晶座6設置高低差，從而獲得抑制製程氣體之氣流擾動的效果。而且，晶座6藉由前述間隙10而旋轉自如，前述間隙10成為連通晶座6之上部空間2a與下部空間2b的連通路徑。
而且，在下部空間2b中，作為吹掃氣體之氫氣(H2 )從旋轉軸7之下方導入，朝向晶座6而向上方流動，沿著底部4之研缽般之擴展而展開，且藉由旋轉軸7或晶座6之旋轉而一部分以漩渦的方式流動。前述吹掃氣體通過前述間隙10而流向上部空間2a，並從氣體排出口5b排出。
而且，如圖3所示，於與緩衝室101之連結部閘極形成有狹縫12，吹掃氣體從前述狹縫12朝向下部空間2b流動。這是為了防止製程氣體進入狹縫12而對狹縫12造成損傷。
繼而，按照一連串流程對藉由如此構成之CVD裝置100在矽晶圓W形成磊晶膜的方法進行說明。
首先，當矽晶圓W從未圖示之晶圓搬送容器例如向鎖定室103A搬入時，腔室內暫時減壓且藉由N2 氣體而被吹掃。
接下來，當鎖定室103A內成為常壓時，緩衝室101之搬運機器人101a從鎖定室103A接收矽晶圓W，並將前述矽晶圓W例如載置於製程室102B之晶座6上。
製程室102B中形成有已減壓之膜形成室2。此處，上部空間2a之氣壓被控制在大氣壓±0.2kPa之範圍內。這是為了抑制成為碳環境氣體之捲起因素的腔室內之製程氣體之流動擾動。
然後，從氣體導入口5a以預定流量(30slm至60slm)導入製程氣體，前述製程氣體與矽晶圓W上表面平行地流動，並能從氣體排出口5b被排出。
另一方面，下部空間2b中，吹掃氣體從旋轉軸7之下方之導入口(未圖示)導入。被導入之吹掃氣體(稱作主吹掃氣體)朝向晶座6流動，並沿著底部4之研缽狀之擴展而展開。然後，通過預熱環11與晶座6之間的間隙10而流向上部空間2a，並能從氣體排出口5b被排出。
此處，當將流經上部空間2a之製程氣體之流量設為100時，流經下部空間2b之吹掃氣體流量比被控制為1.0至1.5。其原因在於，當吹掃氣體流量比小於1.0時，有腔室內受到金屬污染之虞，當超過1.5時，碳環境氣體有捲起之虞。
而且，預定流量之吹掃氣體(稱作狹縫吹掃氣體)從形成於保持框架5與緩衝室101之連結部閘極之狹縫12，朝向下部空間2b流動。
此處，當將流經上部空間2a之製程氣體之流量設為100時，由狹縫吹掃氣體與主吹掃氣體所引起之下部空間2b內的流量為20.5以下。藉此，晶座表背界面區域處之壓力平衡可設為上部空間2a之氣壓＞下部空間2b之氣壓，藉此可抑制碳環境氣體向上部空間2a之捲起。
藉由如此進行氣體之流量控制，於矽晶圓W之表面形成碳濃度控制得低之磊晶膜。
根據上述之本發明之實施形態，在藉由載置矽晶圓W之晶座而腔室內被大致分割為上部空間2a與下部空間2b的CVD裝置中，藉由控制流經上部空間2a之製程氣體之流量與流經下部空間2b之吹掃氣體之流量的比率，可抑制碳環境氣體之捲起並降低磊晶膜中之碳濃度。
基於實施例進一步說明本發明之磊晶矽晶圓的製造方法。本實施例中，基於前述實施形態進行以下之實驗。
(實驗1) 實驗1中，使用圖1至圖3所示之CVD裝置作為裝置構成，為了規定：(1)將腔室內上部空間中之製程氣體的流量設為100時之下部空間中之主吹掃氣體流量之比率，(2)腔室內氣壓(爐內壓)，(3)相對於預熱環高度之晶座高度，(4)將腔室內上部空間中之製程氣體流量設為100時之下部空間中的主吹掃氣體及狹縫吹掃氣體之流量之比率，之各自較佳之範圍，利用實驗進行評價。作為具體之評估項目有：爐內金屬污染、碳環境氣體之捲起以及製程氣體流動之擾動這三點。
表1中係表示實施例1至13以及比較例1至14之條件與結果。表1中，關於爐內金屬污染係測量製程處理後的晶圓之壽命值，將穩定地滿足基準值的情況設為○，基準值相等且偶然出現不合格值的情況設為△，基準值不合格的情況設為×。而且，關於碳環境氣體捲起係測量製程處理後的晶圓之碳強度，將穩定地滿足基準值的情況設為○，基準值相等且偶然出現不合格值的情況設為△，基準值不合格的情況設為×。而且，關於製程氣體流之擾動係測量製程處理後的晶圓之膜厚分佈，將穩定地滿足基準值的情況設為○，基準值相等且偶然出現不合格值的情況設為△，基準值不合格的情況設為×。
[表1]
Figure 108121621-A0304-0001
如表1所示，已確認到：(1)腔室內上部空間中之製程氣體流量設為100時之下部空間的主吹掃氣體流量比率較佳為1.0至1.5之範圍，(2)腔室內氣壓(爐內壓)較佳為大氣壓±0.2kPa之範圍，(3)相對於預熱環高度之晶座高度較佳為0mm至-3mm之範圍，(4)腔室內上部空間中之製程氣體流量設為100時之下部空間的主吹掃氣體及狹縫吹掃氣體之流量比率較佳為1.0至20.5之範圍。
(實驗2) 實驗2中，在藉由實驗1之結果規定之較佳條件下，進行了磊晶膜中之PL碳濃度相對於腔室內下部空間之吹掃流量的評價。
實施例14中，將腔室內上部空間中之製程氣體流量為100時的下部空間中的主吹掃氣體流量比率設為1.25(流量為0.5slm)。而且，腔室內氣壓(爐內壓)設為大氣壓±0.2kPa之範圍，相對於預熱環高度之晶座高度設為0mm至-3mm之範圍內。在該等條件下，於晶圓上形成磊晶膜，且藉由PL(Photoluminescence；光致發光)測量法測量碳強度。
另一方面，在比較例15中，將腔室內上部空間中之製程氣體流量為100時的下部空間之主吹掃氣體流量比率設為2.5(流量為1slm)。其他條件與實施例14設為相同，同樣地藉由PL法測量碳強度。
將實施例14以及比較例15之結果表示於圖4之圖表中。圖4之圖表中，橫軸表示主吹掃氣體流量(slm)，縱軸表示碳強度。如圖4所示，實施例14中之磊晶膜中之碳強度為4.38，比較例15中為8.29。亦即，根據實施例14，可使碳強度較比較例15減少一半。
經由以上之實施例之結果確認，根據本發明，在形成於晶圓上之磊晶膜中，可使碳濃度比習知降低更多。
2:磊晶膜形成室 2a:上部空間 2b:下部空間 3:頂部 4:底部 5:保持框架 5a、201:氣體導入口 5b、202:氣體排出口 6、205:晶座 7、206:旋轉軸 10、208:間隙 11:預熱環 12:狹縫 100:CVD裝置 101:緩衝室 101a:搬運機器人 102A至102C:製程室(反應爐) 103A、103B:鎖定室 104:冷卻室 200:反應爐 207:吹掃氣體排出口 W:矽晶圓
圖1係能夠應用於本發明之磊晶矽晶圓的製造方法之CVD(化學氣相成長)裝置的俯視圖。
圖2係圖1之一製程室之B-B箭頭剖面圖。
圖3係圖1之一製程室之A-A箭頭剖面圖。
圖4係表示本發明之其他實施例及比較例之結果之圖表。
圖5係實施習知之化學氣相成長方法的製程室之剖面圖。
3:頂部
5:保持框架
12:狹縫
101:緩衝室
101a:搬運機器人
102A至102C:製程室(反應爐)
103A、103B:鎖定室
104:冷卻室

Claims (4)

  1. 一種磊晶矽晶圓的製造方法，係於以載置有矽晶圓之晶座為邊界而劃分為上部空間與下部空間且前述上部空間與前述下部空間經由預定間隙而連通的反應爐內，在前述矽晶圓之表面形成磊晶膜； 一邊於前述反應爐內之上部空間形成沿矽晶圓之上表面橫向地流動之製程氣體之氣流，一邊於前述下部空間形成從前述晶座之下方朝向該晶座而向上方流動之主吹掃氣體之氣流； 於將前述上部空間內流動之製程氣體之流量設為100時，將流經前述下部空間之主吹掃氣體流量比設為1.0至1.5； 至少將前述上部空間之氣壓控制於大氣壓±0.2kPa內。
  2. 如請求項1所記載之磊晶矽晶圓的製造方法，其中於沿著前述晶座之外周配置之環狀之預熱環之內周緣部與前述晶座之外周緣部之間形成有前述間隙； 將前述晶座之高度設定為前述預熱環之高度之+0mm至-3mm以內。
  3. 如請求項1所記載之磊晶矽晶圓的製造方法，其中形成從前述反應爐中之成為矽晶圓之搬入搬出閘極之狹縫向前述下部空間流動之狹縫吹掃氣體之氣流； 於將在前述上部空間流動之製程氣體之流量設為100時，流經前述下部空間之前述主吹掃氣體及前述狹縫吹掃氣體之流量比設為20.5以下。
  4. 如請求項2所記載之磊晶矽晶圓的製造方法，其中形成從前述反應爐中之成為矽晶圓之搬入搬出閘極之狹縫向前述下部空間流動之狹縫吹掃氣體之氣流； 於將在前述上部空間流動之製程氣體之流量設為100時，流經前述下部空間之前述主吹掃氣體及前述狹縫吹掃氣體之流量比設為20.5以下。
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