JP2012227527A - 材料層を堆積するための装置および方法 - Google Patents
材料層を堆積するための装置および方法 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000000151 deposition Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 125000006850 spacer group Chemical group 0.000 claims abstract description 15
- 230000008021 deposition Effects 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- 239000002245 particle Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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Abstract
【解決手段】プロセスガスから発生する材料層を基板ウェハ上に堆積するための装置は、上方ドームと下方ドームと側壁とによって画定されるリアクタチャンバと、材料層の堆積の際に基板ウェハを保持するためのサセプタと、サセプタを取囲む予熱リングと、ライナーとを備え、その上に、予熱リングが、均一幅の隙間が予熱リングとサセプタとの間に存在するように中央位置に支持され、さらにライナーと予熱リングとの間に作用するスペーサを備え、当該スペーサは、予熱リングを中央位置に保ち、かつ予熱リングとライナーとの間に距離Δを発生する。
【選択図】図1
Description
発明は、プロセスガスから発生する材料層を基板ウェハ上に堆積するための装置と、当該装置を用いる方法とに関する。
上方ドームと下方ドームと側壁によって画定されるリアクタチャンバと、
材料層の堆積の際に基板ウェハを保持するためのサセプタと、
サセプタを取囲む予熱リングと、
ライナーとを備え、その上に、予熱リングが、均一幅の隙間が予熱リングとサセプタとの間に存在するように中央位置で支持され、さらに
ライナーと予熱リングとの間に作用するスペーサを備え、当該スペーサは、予熱リングを中央位置に保ち、かつ予熱リングとライナーとの間に距離Δを発生する、装置によって達成される。
発明の有利な効果は、堆積された層の抵抗率の径方向プロファイルまたは堆積された層上に検出される粒子の数などの性質を、ケイ素から構成されるエピタキシャルに堆積された層を設けた、ケイ素から構成される半導体ウェハの場合において比較すれば明らかである。
Claims (7)
- プロセスガスから発生する材料層を基板ウェハ上に堆積するための装置であって、
上方ドームと下方ドームと側壁とによって画定されるリアクタチャンバと、
材料層の堆積の際に基板ウェハを保持するためのサセプタと、
サセプタを取囲む予熱リングと、
ライナーとを備え、その上に、予熱リングが、均一幅の隙間が予熱リングとサセプタとの間に存在するように中央位置に支持され、さらに
ライナーと予熱リングとの間に作用するスペーサを備え、前記スペーサは、予熱リングを中央位置に保ち、かつ予熱リングとライナーとの間に距離Δを発生する、装置。 - 隙間は0.1mm以上2mm以下の均一な幅を有する、請求項1に記載の装置。
- 予熱リングの外側横方向境界と、−前記境界とは反対にある−ライナーの内側横方向境界との間の距離は0.1mm以上1.9mm以下である、請求項1または2に記載の装置。
- スペーサに隣接する領域における予熱リングとライナーとの間の距離Δは0.01mm以上2mm以下である、請求項1から3のいずれかに記載の装置。
- 摺動ボールはスペーサを形成し、摺動ボールは予熱リングの端縁領域にわたって分散し、予熱リングおよびライナー中に部分的に埋込まれる、請求項1から4のいずれかに記載の装置。
- プロセスガスから発生する材料層を基板ウェハ上に堆積するための方法であって、
請求項1から5のいずれかに記載の装置においてサセプタによって保持される基板ウェハに、予熱リング上にわたってプロセスガスを向けるステップを備える、方法。 - 基板ウェハは、堆積の間、予熱リングとサセプタとの間に隙間が存在する中央位置に保持され、前記隙間は0.1mm以上2mm以下の均一な幅を有する、請求項6に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102011007632.8 | 2011-04-18 | ||
DE102011007632A DE102011007632B3 (de) | 2011-04-18 | 2011-04-18 | Verfahren und Vorrichtung zum Abscheiden einer von Prozessgas stammenden Materialschicht auf einer Substratscheibe |
Publications (2)
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JP2012227527A true JP2012227527A (ja) | 2012-11-15 |
JP5748699B2 JP5748699B2 (ja) | 2015-07-15 |
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JP2012089225A Expired - Fee Related JP5748699B2 (ja) | 2011-04-18 | 2012-04-10 | 材料層を堆積するための装置および方法 |
Country Status (7)
Country | Link |
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US (1) | US10240235B2 (ja) |
JP (1) | JP5748699B2 (ja) |
KR (1) | KR101461272B1 (ja) |
CN (1) | CN102751181B (ja) |
DE (1) | DE102011007632B3 (ja) |
SG (2) | SG185214A1 (ja) |
TW (1) | TWI467048B (ja) |
Cited By (4)
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KR20160095120A (ko) * | 2013-12-06 | 2016-08-10 | 어플라이드 머티어리얼스, 인코포레이티드 | 예비가열 부재를 셀프 센터링하기 위한 장치 |
JP2016541127A (ja) * | 2013-11-25 | 2016-12-28 | エルジー シルトロン インコーポレイテッド | エピタキシャルウェハ成長装置 |
JP2020191346A (ja) * | 2019-05-21 | 2020-11-26 | クアーズテック株式会社 | サセプタおよびエピタキシャル成長装置 |
WO2020261789A1 (ja) * | 2019-06-27 | 2020-12-30 | 株式会社Sumco | エピタキシャル成長装置およびエピタキシャルウェーハの製造方法 |
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US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
JP6998839B2 (ja) * | 2018-06-25 | 2022-01-18 | グローバルウェーハズ・ジャパン株式会社 | エピタキシャルシリコンウェーハの製造方法 |
KR20210027265A (ko) | 2018-06-27 | 2021-03-10 | 에이에스엠 아이피 홀딩 비.브이. | 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 막 및 구조체 |
WO2020002995A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP2020096183A (ja) | 2018-12-14 | 2020-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
TW202405220A (zh) | 2019-01-17 | 2024-02-01 | 荷蘭商Asm Ip 私人控股有限公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
JP2020136677A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
KR102638425B1 (ko) | 2019-02-20 | 2024-02-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 내에 형성된 오목부를 충진하기 위한 방법 및 장치 |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP2021012952A (ja) * | 2019-07-05 | 2021-02-04 | 東京エレクトロン株式会社 | 載置台、基板処理装置及び載置台の組立方法 |
JP2021015791A (ja) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TW202113936A (zh) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
TW202129060A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 基板處理裝置、及基板處理方法 |
TW202115273A (zh) | 2019-10-10 | 2021-04-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成光阻底層之方法及包括光阻底層之結構 |
KR20210045930A (ko) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 산화물의 토폴로지-선택적 막의 형성 방법 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
TW202125596A (zh) | 2019-12-17 | 2021-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成氮化釩層之方法以及包括該氮化釩層之結構 |
KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
TW202140135A (zh) | 2020-01-06 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣體供應總成以及閥板總成 |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
KR20210095050A (ko) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
TW202146715A (zh) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於生長磷摻雜矽層之方法及其系統 |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
KR20210116249A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
KR20210117157A (ko) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
CN113555279A (zh) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | 形成含氮化钒的层的方法及包含其的结构 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
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EP3978647A1 (de) * | 2020-09-30 | 2022-04-06 | Siltronic AG | Verfahren und vorrichtung zum abscheiden einer epitaktischen schicht auf einer substratscheibe aus halbleitermaterial |
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US11781212B2 (en) | 2021-04-07 | 2023-10-10 | Applied Material, Inc. | Overlap susceptor and preheat ring |
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US20220364229A1 (en) * | 2021-05-11 | 2022-11-17 | Applied Materials, Inc. | Multi-port exhaust system for epitaxial deposition chamber |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
CN113981531B (zh) * | 2021-10-26 | 2022-10-04 | 江苏天芯微半导体设备有限公司 | 一种预热环及衬底处理设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002141294A (ja) * | 2000-07-24 | 2002-05-17 | Asm America Inc | ゾーン加熱用改良加熱ランプ |
JP2003218039A (ja) * | 2002-01-23 | 2003-07-31 | Shin Etsu Handotai Co Ltd | 熱処理装置および熱処理方法 |
JP2006066432A (ja) * | 2004-08-24 | 2006-03-09 | Shin Etsu Handotai Co Ltd | 石英治具及び半導体製造装置 |
JP2008235830A (ja) * | 2007-03-23 | 2008-10-02 | Sumco Techxiv株式会社 | 気相成長装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5304248A (en) * | 1990-12-05 | 1994-04-19 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
US6153260A (en) | 1997-04-11 | 2000-11-28 | Applied Materials, Inc. | Method for heating exhaust gas in a substrate reactor |
US6344631B1 (en) | 2001-05-11 | 2002-02-05 | Applied Materials, Inc. | Substrate support assembly and processing apparatus |
JP2003142411A (ja) | 2001-10-31 | 2003-05-16 | Applied Materials Inc | 半導体製造装置 |
JP4378699B2 (ja) * | 2004-08-03 | 2009-12-09 | 株式会社Sumco | エピタキシャル成長装置 |
KR101119780B1 (ko) * | 2005-06-30 | 2012-03-23 | 엘지디스플레이 주식회사 | 플라즈마 화학증착장치 |
US20070089836A1 (en) * | 2005-10-24 | 2007-04-26 | Applied Materials, Inc. | Semiconductor process chamber |
US7942969B2 (en) * | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US8398777B2 (en) * | 2008-05-02 | 2013-03-19 | Applied Materials, Inc. | System and method for pedestal adjustment |
US8251009B2 (en) * | 2008-05-14 | 2012-08-28 | Applied Materials, Inc. | Shadow frame having alignment inserts |
US20100122655A1 (en) * | 2008-11-14 | 2010-05-20 | Tiner Robin L | Ball supported shadow frame |
JP5549441B2 (ja) * | 2010-01-14 | 2014-07-16 | 東京エレクトロン株式会社 | 保持体機構、ロードロック装置、処理装置及び搬送機構 |
-
2011
- 2011-04-18 DE DE102011007632A patent/DE102011007632B3/de not_active Expired - Fee Related
-
2012
- 2012-02-29 US US13/407,832 patent/US10240235B2/en active Active
- 2012-04-03 TW TW101111830A patent/TWI467048B/zh not_active IP Right Cessation
- 2012-04-10 JP JP2012089225A patent/JP5748699B2/ja not_active Expired - Fee Related
- 2012-04-12 SG SG2012026605A patent/SG185214A1/en unknown
- 2012-04-12 KR KR1020120038146A patent/KR101461272B1/ko active IP Right Grant
- 2012-04-12 SG SG10201406621WA patent/SG10201406621WA/en unknown
- 2012-04-13 CN CN201210109937.3A patent/CN102751181B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002141294A (ja) * | 2000-07-24 | 2002-05-17 | Asm America Inc | ゾーン加熱用改良加熱ランプ |
JP2003218039A (ja) * | 2002-01-23 | 2003-07-31 | Shin Etsu Handotai Co Ltd | 熱処理装置および熱処理方法 |
JP2006066432A (ja) * | 2004-08-24 | 2006-03-09 | Shin Etsu Handotai Co Ltd | 石英治具及び半導体製造装置 |
JP2008235830A (ja) * | 2007-03-23 | 2008-10-02 | Sumco Techxiv株式会社 | 気相成長装置 |
Cited By (14)
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---|---|---|---|---|
JP2016541127A (ja) * | 2013-11-25 | 2016-12-28 | エルジー シルトロン インコーポレイテッド | エピタキシャルウェハ成長装置 |
KR102277859B1 (ko) * | 2013-12-06 | 2021-07-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 예비가열 부재를 셀프 센터링하기 위한 장치 |
JP2017501570A (ja) * | 2013-12-06 | 2017-01-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 予熱部材をセルフセンタリングするための装置 |
CN110797291A (zh) * | 2013-12-06 | 2020-02-14 | 应用材料公司 | 用于使预热构件自定中心的装置 |
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JP2020191346A (ja) * | 2019-05-21 | 2020-11-26 | クアーズテック株式会社 | サセプタおよびエピタキシャル成長装置 |
JP2021005680A (ja) * | 2019-06-27 | 2021-01-14 | 株式会社Sumco | エピタキシャル成長装置およびエピタキシャルウェーハの製造方法 |
WO2020261789A1 (ja) * | 2019-06-27 | 2020-12-30 | 株式会社Sumco | エピタキシャル成長装置およびエピタキシャルウェーハの製造方法 |
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CN114026273B (zh) * | 2019-06-27 | 2024-01-09 | 胜高股份有限公司 | 外延生长装置及外延晶片的制造方法 |
KR102644060B1 (ko) | 2019-06-27 | 2024-03-05 | 가부시키가이샤 사무코 | 에피택셜 성장 장치 및 에피택셜 웨이퍼의 제조 방법 |
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CN102751181A (zh) | 2012-10-24 |
US20120263875A1 (en) | 2012-10-18 |
TWI467048B (zh) | 2015-01-01 |
CN102751181B (zh) | 2015-06-17 |
DE102011007632B3 (de) | 2012-02-16 |
SG185214A1 (en) | 2012-11-29 |
SG10201406621WA (en) | 2014-11-27 |
TW201243100A (en) | 2012-11-01 |
KR20120118416A (ko) | 2012-10-26 |
KR101461272B1 (ko) | 2014-11-12 |
JP5748699B2 (ja) | 2015-07-15 |
US10240235B2 (en) | 2019-03-26 |
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