TW202029399A - 晶座 - Google Patents

晶座 Download PDF

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TW202029399A
TW202029399A TW108135778A TW108135778A TW202029399A TW 202029399 A TW202029399 A TW 202029399A TW 108135778 A TW108135778 A TW 108135778A TW 108135778 A TW108135778 A TW 108135778A TW 202029399 A TW202029399 A TW 202029399A
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wafer
contact
groove
crystal seat
crystal
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池尻貴宏
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日商東洋炭素股份有限公司
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    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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Abstract

本發明提供一種可提高由晶圓製作的半導體晶片的良率且不易產生碎屑（缺損）而壽命長的晶座。晶座包括載置晶圓10的凹槽2，且凹槽2中的至少一個包括支持晶圓10的多個支持部3、和晶圓10的側面10a接觸的多個接觸部4、及不和晶圓10的側面10a接觸的多個非接觸部5。接觸部4及非接觸部5交替地形成於凹槽2的內周壁，支持部3中的至少兩個形成於自上方觀看晶座時將凹槽2的中心O與非接觸部5連結的線上。

Description

晶座
本發明是有關於一種用於製造半導體的晶座（susceptor）。
例如，為了製造良好的發光二極體（Light Emitting Diode，LED），重要的是均勻地進行積層於成為半導體晶片的晶圓的表面的、薄膜結晶層的磊晶成長。因此，對於用於製造半導體的晶座而言，為了進行磊晶成長而製造均勻膜厚的薄膜結晶層，需要對晶圓施加傳導熱及輻射熱而均勻地加熱。然而，對於載置於晶座的凹槽（pocket）的晶圓，自與凹槽接觸的部分施加傳導熱，因此於和凹槽接觸的外周部分與不接觸的中央部分之間，晶圓的溫度容易變得不均勻。具體而言，自晶圓的外周向內側3 mm左右的區域容易產生溫度差，故而半導體晶片的良率差。
因此，已進行了專利文獻1所記載的晶圓載具（晶座）等與凹槽的形狀有關的各種提案。 [先前技術文獻] [專利文獻]
專利文獻1：日本公開專利公報「日本專利特開2013-138224號公報」
[發明所欲解決之課題] 然而，本發明者等人進行研究的結果得知：專利文獻1所記載的晶圓載具中，支持載置於凹槽的晶圓的支持部分、與和晶圓的側面接觸的接觸部分鄰接而形成，因而容易對晶圓局部地施加傳導熱。因此，得知存在下述課題，即：於和凹槽接觸的外周部分與不接觸的中央部分之間，晶圓產生溫度差，半導體晶片的良率變差等。
另外，於製造半導體時晶座旋轉。因此，若過於減小晶座與晶圓的接觸部分，則於各種處理時使晶座旋轉時，由離心力所致的應力集中於和載置於凹槽的晶圓的接觸部分（碰撞部分）。因此，得知專利文獻1所記載的晶圓載具（晶座）亦存在下述課題，即：有在該接觸部分而晶座或晶圓產生碎屑（缺損）之虞等。
本發明的一態樣的目的在於提供一種可提高由晶圓製作的半導體晶片的良率的晶座。另外，本發明的一態樣的目的在於提供一種不易產生碎屑（缺損）而壽命長的晶座。 [解決課題之手段]
為了解決所述課題，本發明包含下述＜1＞～＜3＞所示的發明。 ＜1＞一種晶座，包括載置晶圓的凹槽，且所述凹槽中的至少一個包括支持晶圓的多個支持部、和晶圓的側面接觸的多個接觸部、及不和晶圓的側面接觸的多個非接觸部，所述接觸部及非接觸部交替地形成於凹槽的內周壁，所述支持部中的至少兩個形成於自上方觀看晶座時將凹槽的中心與非接觸部連結的線上。 ＜2＞如＜1＞所記載的晶座，其中一個接觸部的周向長度為2 mm以上。 ＜3＞如＜1＞或＜2＞所記載的晶座，其中凹槽的圓周的、所述多個接觸部的周向長度的合計比率為1.5%～50%。 [發明的效果]
根據本發明的一態樣，於晶座在凹槽的內周壁交替地形成有接觸部及非接觸部，且於自上方觀看晶座時將凹槽的中心與非接觸部連結的線上，形成有支持部中的至少兩個。因此，晶圓於和凹槽接觸的外周部分與不接觸的中央部分之間不易產生溫度差，故而品質提昇。因此，發揮下述效果，即：可提供一種可提高由晶圓製作的半導體晶片的良率的晶座等。另外，多個接觸部及多個非接觸部交替地形成於凹槽的內周壁，故而向與載置於凹槽的晶圓的接觸部分（碰撞部分）的、由離心力所致的應力集中減小。因此，發揮下述效果，即：可提供一種晶座或晶圓不易產生碎屑（缺損）而壽命長的晶座等。
以下對本發明的一實施形態進行說明，但本發明不限定於此。本發明不限定於以下說明的各實施形態或各構成，可於申請專利範圍所示的範圍內進行各種變更，將不同實施形態或實施例中分別揭示的技術手段適當組合所得的實施形態或實施例亦包含於本發明的技術範圍。另外，本說明書中記載的學術文獻及專利文獻於本說明書中全部作為參考文獻而援用。另外，只要本說明書中無特別記載，則表示數值範圍的「A～B」意指「A以上、B以下」。
〔實施形態1〕 以下，對本發明的一實施形態進行說明。
本發明一實施形態的晶座具備載置晶圓的凹槽，且所述凹槽中的至少一個具備支持晶圓的多個支持部、和晶圓的側面接觸的多個接觸部、及不和晶圓的側面接觸的多個非接觸部，所述接觸部及非接觸部交替地形成於凹槽的內周壁，所述支持部中的至少兩個形成於自上方觀看晶座時將凹槽的中心與非接觸部連結的線上。
如圖1（a）及圖1（b）所示，圓盤狀的晶座（亦稱為「台座」、「基板支持體」、「晶圓載具」等）1為安裝於用於製造半導體的例如有機金屬化學氣相沈積（Metal Organic Chemical Vapor Deposition，MOCVD）裝置等製造裝置的構件，由高純度的等向性石墨或碳化矽燒結體等碳系材料所形成。具體而言，例如於高純度的等向性石墨的表面塗佈有SiC的晶座合適。晶座1的直徑是根據半導體的製造裝置而適當設定，故而並無特別限定。 晶座1用於在半導體製造步驟中載置藍寶石晶圓、氮化鎵晶圓、矽晶圓等半導體晶圓（以下僅記載為晶圓），進行加熱並且於水平方向旋轉，使薄膜結晶層於該晶圓的表面磊晶成長而積層。另外，晶座1亦於進行在晶圓的表面形成氧化物層或氮化物層的表面改質、將附著於晶圓表面的污染物去除的表面清潔、或退火（annealing）時使用。
於晶座1的上表面形成有至少一個、或多個凹槽（亦稱為「凹部」、「鑽錐坑」等）2，於該凹槽2載置晶圓而進行各種處理。於晶座1的下方設置有將該晶座1加熱的加熱器或高頻感應線圈等加熱裝置（未圖示）。晶座1以可對載置的所有晶圓均等地進行加熱的方式，設計凹槽2的個數及配置、以及加熱裝置的配置。另外，凹槽2的個數及配置只要以根據晶座1及晶圓的大小而形成最多的凹槽2的方式決定即可，並無特別限定。因此，形成於圖1（a）及圖1（b）所示的晶座1的凹槽2的個數、配置及大小（尺寸）僅為一例。
凹槽2的直徑（Φ）是指形成有接觸部4的部分的內周壁的直徑（並非形成有非接觸部5的部分的內周壁的直徑）。另外，於將凹槽2的直徑設為100時，載置於該凹槽2的最小的晶圓10的直徑通常為98以上、小於100。若晶圓10的直徑小於98，則有時於晶座1的旋轉開始時或旋轉結束時等，晶座1或晶圓10容易產生由碰撞所致的碎屑（缺損）。另外，於本說明書中僅記載為「內周壁」的情形時，是指形成有接觸部4的部分的內周壁。
多個凹槽2於自上方觀看晶座1時為大致圓形狀，可如圖1（a）所示般相互獨立地形成，亦可如圖1（b）所示般以相互連通的方式形成。凹槽2是藉由考慮載置有晶圓的狀態下的氣體流動或溫度分佈，對每個凹槽2加深其深度或使其深度變淺而形成。
列舉凹槽2相互獨立地形成的情形為例進一步進行說明。作為實施例1，如圖2的（a）及（b）所示，凹槽2中的至少一個具備支持晶圓10的多個支持部3、和晶圓10的側面10a接觸的多個接觸部4、及不和晶圓10的側面10a接觸的多個非接觸部5。所述接觸部4及非接觸部5交替地形成於凹槽2的內周壁，所述支持部3中的至少兩個形成於從上方觀看晶座1時將凹槽2的中心O與非接觸部5連結的線上。另外，支持部3、接觸部4及非接觸部5的個數及配置只要根據晶座1的凹槽2的形成位置、加熱裝置的位置等而適當決定即可，並無特別限定。因此，圖2的（a）及（b）所示的將支持部3、接觸部4及非接觸部5等間隔地配置有各6個的凹槽2（實施例1）僅為一例。
支持部（亦稱為「凸舌（tab）」）3於一個晶座1形成有多個，與晶圓10的下表面接觸而支持載置於凹槽2的該晶圓10。支持部3的個數只要以可穩定地支持所載置的晶圓10的方式而存在至少三個即可，並無特別限定。關於距凹槽2的底面2a的、支持部3的高度，考慮晶圓10的翹曲，只要為將來自底面2a的輻射熱適度地施加於晶圓10的程度的高度即可，例如只要設為0.02 mm～1.5 mm的範圍內、較佳為0.02 mm～0.5 mm的範圍內即可。其中，距凹槽2的底面2a的、支持部3的高度只要為晶圓10與底部2a不接觸的高度即可，並無特別限定。關於支持部3的與晶圓10的接觸面積，由於晶圓10經支持部3穩定地支持，並且自支持部3亦有傳導熱，故而只要為來自該支持部3的傳導熱儘可能減少的面積即可，並無特別限定。
支持部3的形狀（自上方觀看凹槽2時的形狀）如圖3（a）～圖3（c）所示，有山型等各種形狀，但並無特別限定。另外，圖3（a）～圖3（c）中，支持部3自底面2a突出，與非接觸部5接觸而形成，但亦可不與非接觸部5接觸，而形成於凹槽2的與非接觸部5的形成位置鄰接的位置。即，只要支持部3中的至少兩個、尤佳為多個支持部3全部形成於自上方觀看晶座1時將凹槽2的中心O與非接觸部5連結的線上即可，無需與非接觸部5接觸。另外，支持部3亦可於自上方觀看晶座1時，不位於非接觸部5的中心部分。
接觸部4構成凹槽2的內周壁，至少於晶座1的旋轉時和晶圓10的側面10a接觸，較佳為和晶圓10的側面10a進行面接觸。即，凹槽2中，使接觸部4與載置於凹槽2的晶圓10的側面10a接觸，較佳為進行面接觸。此處，所謂「進行面接觸」，包含實質上進行面接觸的狀態。具體而言是指下述狀態，即：以凹槽2的直徑（形成有接觸部4的部分的內周壁的直徑）為基準，和晶圓10接觸的接觸部4上的任意的點與載置於凹槽2的晶圓10的側面10a的最短距離接近於0（接觸部4與晶圓10的側面10a物理接觸的狀態）至所述直徑的2%以下的距離、較佳為1%以下的距離。因此，無需遍及整個接觸部4而使該接觸部4與晶圓10的側面10a物理接觸。
關於一個接觸部4的周向長度（自上方觀看凹槽2時的周向長度），為了減小向晶圓10的接觸部分的、由離心力所致的應力集中，較佳為2 mm以上。接觸部4的個數及各個接觸部4的周向長度只要以可使晶圓10的溫度均勻的方式設定即可，並無特別限定。另外，凹槽2的圓周（形成有接觸部4的部位的圓的圓周）的、所述多個接觸部4的周向長度的合計比率較佳為1.5%～50%。
凹槽2的形成有接觸部4的部分的內周壁的剖面形狀可如圖3（d）所示般自底面2a向上垂直，亦可如圖3（e）所示般設有自底面2a向上擴寬般的傾斜，亦可如圖3（f）所示般設有自底面2a向上縮窄般的傾斜。另外，關於所述傾斜的角度，將自底面2a向上垂直地形成有內周壁的情形設為0°，合適的是-10°～10°左右。
非接觸部5形成於凹槽2的內周壁的、與支持部3的形成位置鄰接的位置。因此，在形成有支持部3之處未形成接觸部4。因此，於凹槽2中，支持部3與接觸部4並未鄰接地形成，因而不會對晶圓10局部地施加傳導熱。
非接觸部5以並無自該非接觸部5對晶圓10的傳導熱的影響的方式而遠離晶圓10。即，非接觸部5只要形成於較接觸部4而距凹槽2的中心O更遠的位置即可。
非接觸部5為了進行接觸部4的分割等，視需要亦可形成於不與支持部3的形成位置鄰接的位置（未形成有支持部3之處）。另外，如圖1（b）所示，於多個凹槽2相互連通的情形時，連通部分a亦相當於非接觸部，於該連通部分a亦可不形成支持部3。
另外，於凹槽2，只要存在多個以本實施形態的配置而形成有支持部3、接觸部4及非接觸部5的部位即可。即，於本實施形態的凹槽2，亦可存在以現有的配置而形成有支持部、接觸部及非接觸部的部位。進而，於在晶座1設有多個凹槽2的情形時，只要於該晶座1形成有至少一個本實施形態的凹槽2即可。即，亦可於形成有至少一個本實施形態的凹槽2的晶座1，進一步形成有以現有的個數及配置而形成有支持部、接觸部及非接觸部的凹槽。因此，具備多個載置晶圓10的凹槽2，且該些凹槽2中的至少一個具備上文所述的構成的支持部3、接觸部4及非接觸部5的晶座亦包含於本發明的實施形態。
本發明的一實施形態的晶座用於製造半導體。半導體的製造裝置至少具備具有排氣口的腔室（chamber）、收容於腔室內的晶座、對腔室內供給原料氣體的原料氣體供給裝置、對腔室內供給載氣的載氣供給裝置、使晶座旋轉的旋轉裝置、及將腔室內加熱的腔室加熱裝置。半導體的製造裝置一面使晶座旋轉，一面於載置於該晶座的晶圓的表面製造薄膜結晶層而積層，從而製造半導體。即，半導體是藉由使晶座旋轉，將載置於該晶座的晶圓加熱，並於表面製造薄膜結晶層而積層的方法進行製造。
由所述製造裝置實施了各種處理的晶圓經晶片化、封裝（模組）化而製成半導體器件，例如製成LED等各種製品。
〔實施形態2〕 以下對本發明的另一實施形態進行說明。另外，為了便於說明，對具有與實施形態1中說明的構件相同的功能的構件附註相同符號，省略其說明。
實施形態1中說明的支持部3、接觸部4及非接觸部5無需於凹槽2內等間隔地（例如以自上方觀看凹槽2時成為線對稱或點對稱的方式）形成，根據晶座1的該凹槽2的形成位置、加熱裝置的位置等，以可對晶圓10均勻地施加傳導熱的方式適當設定其個數、配置及大小（長度）。因此，於在晶座1設有多個凹槽2的情形時，各個凹槽2的支持部3、接觸部4及非接觸部5的個數、配置及大小（長度）亦可互不相同。
具體而言，用於進行實施形態1的說明的將支持部3、接觸部4及非接觸部5等間隔地配置有各6個（偶數）的凹槽2（圖2的（a）及（b）的實施例1）僅為一例。關於作為本發明的另一實施形態的所述凹槽2的變形例（圖案），如圖4的（a）及（b）所示，例如可列舉：將支持部3、接觸部4及非接觸部5配置有各5個（奇數）的凹槽2（變形例1）；將支持部3、接觸部4及非接觸部5以並非等間隔的間隔配置有各6個的凹槽2（變形例2）等各種例。
[實施例] 繼而，關於本發明的晶座，列舉實施例及比較例進行更詳細說明，但本發明並非僅限制於該實施例。
〔實施例1〕 於晶座製作凹槽2，該凹槽2為獨立地形成的凹槽，且作為實施例1而示於圖2的（a）及（b）。即，製作下述晶座，該晶座是於高純度的等向性石墨的表面塗佈有SiC而成，並且凹槽2的直徑（Φ）為50 mm，於凹槽2具備6個支持部3，於與該支持部3的形成位置鄰接的凹槽2的內周壁形成有6個非接觸部5，於該非接觸部5間形成有6個一個長度（自上方觀看凹槽時的周向長度）為13 mm的接觸部4，圓周的接觸部4的周向長度的合計比率為約50%。而且，如圖2的（b）所示，使用於凹槽2載置有晶圓10的所述晶座而製造半導體。
〔實施例2〕 作為實施例2，如圖4的（a）、（b）所示，將凹槽2的直徑（Φ）設為200 mm，將各接觸部4的長度設為2 mm，除此以外，與實施例1同樣地製作圓周的接觸部4的周向長度的合計比率為約1.9%的晶座，製造半導體。
〔比較例1〕 於晶座製作凹槽2'，該凹槽2'為獨立地形成的凹槽，且作為比較例1而示於圖2的（a）。即，製作下述晶座，該晶座是於高純度的等向性石墨的表面塗佈有SiC而成，且於凹槽2'具備6個支持部3'，於與該支持部3'的形成位置鄰接的凹槽2'的內周壁，形成有6個一個長度（自上方觀看凹槽時的周向長度）為1 mm的接觸部4'，於該接觸部4'間形成有6個非接觸部5'。而且，如圖2的（b）所示，使用於凹槽2'載置有晶圓10的所述晶座製造半導體。
〔比較例2〕 於晶座製作凹槽2''，該凹槽2''為獨立地形成的凹槽，且作為比較例2而示於圖2的（a）。即，製作下述晶座，該晶座是於高純度的等向性石墨的表面塗佈有SiC而成，且於凹槽2''具備6個支持部3''，遍及凹槽2''的內周壁全周而形成有接觸部4''。而且，如圖2的（b）所示，使用於凹槽2''載置有晶圓10的所述晶座製造半導體。
（結果） 與比較例1的晶座比較，實施例1的晶座的壽命成為兩倍。另外，由晶圓製作的半導體晶片的良率提高10%。
與比較例2的晶座比較，實施例1的晶座的壽命為相同程度，但由晶圓製作的半導體晶片的良率提高20%。
與比較例1的晶座比較，實施例2的晶座的壽命成為兩倍。另外，由晶圓製作的半導體晶片的良率提高15%。
與比較例2的晶座比較，實施例2的晶座的壽命為相同程度，但由晶圓製作的半導體晶片的良率提高25%。
比較例1的晶座中，一個接觸部4'的長度短至1 mm，另外，在形成有支持部3'之處亦形成有接觸部4'，故而容易對晶圓10局部地施加傳導熱。因此，於和凹槽2'接觸的外周部分與不接觸的中央部分之間晶圓10產生溫度差，半導體晶片的良率變差。另外，一個接觸部4'的長度短至1 mm，故而於各種處理時使晶座旋轉時由離心力所致的應力集中於該接觸部4'，晶座或晶圓10容易產生碎屑。
比較例2的晶座遍及凹槽2''的內周壁全周而形成有接觸部4''，故而不僅遍及晶圓10的全周而大量施加傳導熱，而且於支持部3''的附近亦施加來自該支持部3''的傳導熱，於和凹槽2''接觸的外周部分與不接觸的中央部分之間晶圓10產生大的溫度差，半導體晶片的良率變差。 [產業上的可利用性]
本發明的晶座可廣泛地用於製造半導體。
1:晶座 2、2'、2'':凹槽 2a:底面 3、3'、3'':支持部 4、4'、4'':接觸部 5、5':非接觸部 10:晶圓 10a:側面 a:連通部分 O:中心 A-A:線
圖1（a）及圖1（b）表示本發明一實施形態的晶座的一例，圖1（a）、圖1（b）均為概略平面圖。 圖2的（a）及（b）為表示形成於所述晶座的凹槽中的一個（實施例1、比較例1、比較例2）的圖，圖2的（a）為所述凹槽的概略平面圖，圖2的（b）為圖2的（a）的A-A線箭視剖面圖。 圖3（a）～圖3（f）為表示所述凹槽（實施例1）的主要部分的圖，圖3（a）～圖3（c）為支持部的概略平面圖，圖3（d）～圖3（f）為接觸部的概略剖面圖。 圖4的（a）及（b）為本發明的另一實施形態，且為表示所述凹槽的變形例及實施例2的圖，圖4的（a）為所述凹槽的概略平面圖，圖4的（b）為圖4的（a）的A-A線箭視剖面圖。
2、2'、2":凹槽
2a:底面
3、3'、3":支持部
4、4'、4":接觸部
5、5':非接觸部
10:晶圓
10a:側面
O:中心
A-A:線

Claims (3)

  1. 一種晶座，包括載置晶圓的凹槽，且 所述凹槽中的至少一個包括支持晶圓的多個支持部、和晶圓的側面接觸的多個接觸部、及不和晶圓的側面接觸的多個非接觸部， 所述接觸部及非接觸部交替地形成於凹槽的內周壁， 所述支持部中的至少兩個形成於自上方觀看晶座時將凹槽的中心與非接觸部連結的線上。
  2. 如申請專利範圍第1項所述的晶座，其中一個接觸部的周向長度為2 mm以上。
  3. 如申請專利範圍第1項或第2項所述的晶座，其中凹槽的圓周中的、所述多個接觸部的周向長度的合計比率為1.5%～50%。
TW108135778A 2018-10-04 2019-10-03 晶座 TW202029399A (zh)

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