JP2021005680A - エピタキシャル成長装置およびエピタキシャルウェーハの製造方法 - Google Patents
エピタキシャル成長装置およびエピタキシャルウェーハの製造方法 Download PDFInfo
- Publication number
- JP2021005680A JP2021005680A JP2019120088A JP2019120088A JP2021005680A JP 2021005680 A JP2021005680 A JP 2021005680A JP 2019120088 A JP2019120088 A JP 2019120088A JP 2019120088 A JP2019120088 A JP 2019120088A JP 2021005680 A JP2021005680 A JP 2021005680A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- epitaxial growth
- wafer
- support portion
- growth apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 67
- 238000000034 method Methods 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000012495 reaction gas Substances 0.000 claims description 7
- 239000000428 dust Substances 0.000 abstract description 15
- 235000012431 wafers Nutrition 0.000 description 84
- 238000010586 diagram Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02634—Homoepitaxy
-
- H01L21/205—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
[1]半導体ウェーハの表面上にエピタキシャル層を気相成長させるエピタキシャル成長装置であって、
チャンバと、
前記チャンバの内壁に配置された環状の上部ライナおよび下部ライナと、
前記チャンバの内部に設けられた、前記半導体ウェーハを載置するサセプタと、
前記下部ライナの開口部に突出した支持部上に載置されるとともに、前記サセプタの外周に配置されたプリヒートリングと、
を備え、前記半導体ウェーハは、前記サセプタが降下された状態で、前記チャンバに設けられたウェーハ搬入口から前記チャンバの内部に搬入され、前記下部ライナの支持部および前記プリヒートリングの下方を経由して前記サセプタ上に載置されるエピタキシャル成長装置において、
前記プリヒートリングは、前記半導体ウェーハが前記チャンバの内部に搬入されて前記サセプタ上に載置されるまでの搬送経路において前記半導体ウェーハが通過する領域の直上の少なくとも一部の領域において、前記支持部に支持されないように構成されていることを特徴とするエピタキシャル成長装置。
以下、図面を参照して、本発明によるエピタキシャル成長装置について説明する。本発明によるエピタキシャル成長装置は、半導体ウェーハの表面上にエピタキシャル層を気相成長させるエピタキシャル成長装置であって、チャンバと、該チャンバの内壁に配置された環状の上部ライナおよび下部ライナと、チャンバの内部に設けられた、半導体ウェーハを載置するサセプタと、下部ライナの開口部に突出した支持部上に載置されるとともに、サセプタの外周に配置されたプリヒートリングとを備える。そして、半導体ウェーハは、サセプタが降下された状態で、チャンバに設けられたウェーハ搬入口からチャンバの内部に搬入され、下部ライナの支持部およびプリヒートリングの下方を経由してサセプタ上に載置されるように構成されている。ここで、プリヒートリングは、半導体ウェーハがチャンバの内部に搬入されてサセプタ上に載置されるまでの搬送経路において半導体ウェーハWが通過する領域の直上の少なくとも一部の領域において、支持部に支持されないように構成されていることを特徴とする。
本発明によるエピタキシャルウェーハの製造方法は、上述した本発明によるエピタキシャル成長装置に反応ガスを供給して、半導体ウェーハ上にエピタキシャル層を成長させてエピタキシャルウェーハを得ることを特徴とする。
5 リフトピン
6 昇降シャフト
7 支持シャフト
7a 主柱
7b 支持アーム
10 プロセスチャンバ
11 上部ドーム
12 下部ドーム
13 ドーム取付体
14 クランプ
15 上部ライナ
16,26,36,46,56,66,76 下部ライナ
16a,26a,36a,46a,56a,66a,76a 支持部
17 ガス供給口
18 ガス排出口
20 搬送チャンバ
21 スリット材
22 連通路
23 スリットバルブ
24 ウェーハ搬入口
56b、66b、76b 凹部
60 プリヒートリング
100 エピタキシャル成長装置
B 搬送ブレード
W 半導体ウェーハ
Claims (7)
- 半導体ウェーハの表面上にエピタキシャル層を気相成長させるエピタキシャル成長装置であって、
チャンバと、
前記チャンバの内壁に配置された環状の上部ライナおよび下部ライナと、
前記チャンバの内部に設けられた、前記半導体ウェーハを載置するサセプタと、
前記下部ライナの開口部に突出した支持部上に載置されるとともに、前記サセプタの外周に配置されたプリヒートリングと、
を備え、前記半導体ウェーハは、前記サセプタが降下された状態で、前記チャンバに設けられたウェーハ搬入口から前記チャンバの内部に搬入され、前記下部ライナの支持部および前記プリヒートリングの下方を経由して前記サセプタ上に載置されるエピタキシャル成長装置において、
前記プリヒートリングは、前記半導体ウェーハが前記チャンバの内部に搬入されて前記サセプタ上に載置されるまでの搬送経路において前記半導体ウェーハが通過する領域の直上の少なくとも一部の領域において、前記支持部に支持されないように構成されていることを特徴とするエピタキシャル成長装置。 - 前記少なくとも一部の領域において、前記支持部が設けられていない、請求項1に記載のエピタキシャル成長装置。
- 前記少なくとも一部の領域において、前記プリヒートリングと前記支持部との間に空隙が設けられている、請求項1に記載のエピタキシャル成長装置。
- 前記少なくとも一部の領域は、前記エピタキシャル成長装置を上面視した際に、前記支持部の全周のうち、前記半導体ウェーハの搬送方向に対する中心角が±10°〜90°の領域である、請求項1〜3のいずれか一項に記載のエピタキシャル成長装置。
- 前記少なくとも一部の領域は全ての領域である、請求項1〜4のいずれか一項に記載のエピタキシャル成長装置。
- 請求項1〜5のいずれか一項に記載のエピタキシャル成長装置に反応ガスを供給して、半導体ウェーハ上にエピタキシャル層を成長させてエピタキシャルウェーハを得ることを特徴とするエピタキシャルウェーハの製造方法。
- 前記半導体ウェーハはシリコンウェーハである、請求項6に記載のエピタキシャルウェーハの製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019120088A JP7159986B2 (ja) | 2019-06-27 | 2019-06-27 | エピタキシャル成長装置およびエピタキシャルウェーハの製造方法 |
US17/622,458 US20220251726A1 (en) | 2019-06-27 | 2020-05-13 | Epitaxial growth apparatus and method of producing epitaxial wafer |
CN202080046677.2A CN114026273B (zh) | 2019-06-27 | 2020-05-13 | 外延生长装置及外延晶片的制造方法 |
PCT/JP2020/019162 WO2020261789A1 (ja) | 2019-06-27 | 2020-05-13 | エピタキシャル成長装置およびエピタキシャルウェーハの製造方法 |
DE112020003093.8T DE112020003093T5 (de) | 2019-06-27 | 2020-05-13 | Epitaxiewachstumseinrichtung und verfahren zur herstellung eines epitaxiewafers |
KR1020217042205A KR102644060B1 (ko) | 2019-06-27 | 2020-05-13 | 에피택셜 성장 장치 및 에피택셜 웨이퍼의 제조 방법 |
TW109119457A TWI792001B (zh) | 2019-06-27 | 2020-06-10 | 磊晶成長裝置及磊晶晶圓的製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019120088A JP7159986B2 (ja) | 2019-06-27 | 2019-06-27 | エピタキシャル成長装置およびエピタキシャルウェーハの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021005680A true JP2021005680A (ja) | 2021-01-14 |
JP7159986B2 JP7159986B2 (ja) | 2022-10-25 |
Family
ID=74061377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019120088A Active JP7159986B2 (ja) | 2019-06-27 | 2019-06-27 | エピタキシャル成長装置およびエピタキシャルウェーハの製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20220251726A1 (ja) |
JP (1) | JP7159986B2 (ja) |
KR (1) | KR102644060B1 (ja) |
CN (1) | CN114026273B (ja) |
DE (1) | DE112020003093T5 (ja) |
TW (1) | TWI792001B (ja) |
WO (1) | WO2020261789A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022216458A1 (en) * | 2021-04-07 | 2022-10-13 | Applied Materials, Inc. | Overlap susceptor and preheat ring |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006066432A (ja) * | 2004-08-24 | 2006-03-09 | Shin Etsu Handotai Co Ltd | 石英治具及び半導体製造装置 |
US20120103263A1 (en) * | 2010-10-29 | 2012-05-03 | Applied Materials, Inc. | Pre-heat ring designs to increase deposition uniformity and substrate throughput |
JP2012227527A (ja) * | 2011-04-18 | 2012-11-15 | Siltronic Ag | 材料層を堆積するための装置および方法 |
JP2014086688A (ja) * | 2012-10-26 | 2014-05-12 | Epicrew Inc | エピタキシャル成長装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101539298B1 (ko) * | 2013-11-25 | 2015-07-29 | 주식회사 엘지실트론 | 에피택셜 웨이퍼 성장 장치 |
JP6330941B1 (ja) * | 2017-03-07 | 2018-05-30 | 株式会社Sumco | エピタキシャル成長装置およびプリヒートリングならびにそれらを用いたエピタキシャルウェーハの製造方法 |
KR102408720B1 (ko) * | 2017-06-07 | 2022-06-14 | 삼성전자주식회사 | 상부 돔을 포함하는 반도체 공정 챔버 |
-
2019
- 2019-06-27 JP JP2019120088A patent/JP7159986B2/ja active Active
-
2020
- 2020-05-13 WO PCT/JP2020/019162 patent/WO2020261789A1/ja active Application Filing
- 2020-05-13 CN CN202080046677.2A patent/CN114026273B/zh active Active
- 2020-05-13 DE DE112020003093.8T patent/DE112020003093T5/de active Pending
- 2020-05-13 US US17/622,458 patent/US20220251726A1/en active Pending
- 2020-05-13 KR KR1020217042205A patent/KR102644060B1/ko active IP Right Grant
- 2020-06-10 TW TW109119457A patent/TWI792001B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006066432A (ja) * | 2004-08-24 | 2006-03-09 | Shin Etsu Handotai Co Ltd | 石英治具及び半導体製造装置 |
US20120103263A1 (en) * | 2010-10-29 | 2012-05-03 | Applied Materials, Inc. | Pre-heat ring designs to increase deposition uniformity and substrate throughput |
JP2012227527A (ja) * | 2011-04-18 | 2012-11-15 | Siltronic Ag | 材料層を堆積するための装置および方法 |
JP2014086688A (ja) * | 2012-10-26 | 2014-05-12 | Epicrew Inc | エピタキシャル成長装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022216458A1 (en) * | 2021-04-07 | 2022-10-13 | Applied Materials, Inc. | Overlap susceptor and preheat ring |
US11781212B2 (en) | 2021-04-07 | 2023-10-10 | Applied Material, Inc. | Overlap susceptor and preheat ring |
Also Published As
Publication number | Publication date |
---|---|
WO2020261789A1 (ja) | 2020-12-30 |
CN114026273A (zh) | 2022-02-08 |
US20220251726A1 (en) | 2022-08-11 |
KR102644060B1 (ko) | 2024-03-05 |
KR20220011718A (ko) | 2022-01-28 |
TWI792001B (zh) | 2023-02-11 |
DE112020003093T5 (de) | 2022-03-10 |
CN114026273B (zh) | 2024-01-09 |
JP7159986B2 (ja) | 2022-10-25 |
TW202105474A (zh) | 2021-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5992334B2 (ja) | ウエハのエッジおよび斜面の堆積を修正するためのシャドウリング | |
TWI664310B (zh) | 磊晶成長裝置、預熱環以及使用其之磊晶晶圓的製造方法 | |
JP4669606B2 (ja) | 基板処理装置及び基板支持方法 | |
US11104991B2 (en) | Processing apparatus and cover member | |
US7060944B2 (en) | Heat treatment device and heat treatment method | |
KR100975717B1 (ko) | 기상성장장치와 기상성장방법 | |
CN112992769A (zh) | 基板处理装置和载置台 | |
KR20180048547A (ko) | 열 특성이 개선된 웨이퍼 서셉터 | |
CN112185882A (zh) | 基板处理装置和基板的交接方法 | |
WO2020261789A1 (ja) | エピタキシャル成長装置およびエピタキシャルウェーハの製造方法 | |
JP2004119859A (ja) | サセプタ、半導体ウェーハの製造装置及び製造方法 | |
JP2021068871A (ja) | エピタキシャル成長装置およびエピタキシャルウェーハの製造方法 | |
KR101584116B1 (ko) | Mocvd 장치 | |
KR101436059B1 (ko) | 반도체 제조 장치 및 방법 | |
CN111834281A (zh) | 基板处理装置 | |
WO2020137021A1 (ja) | 気相成長装置およびエピタキシャルシリコンウェーハの製造方法 | |
JP6878212B2 (ja) | サセプタ、cvd装置及びエピタキシャルウェハの製造方法 | |
JP5358201B2 (ja) | 成膜方法 | |
JP2022083011A (ja) | サセプタ、cvd装置 | |
JP7387129B2 (ja) | 成膜用冶具及び常圧気相成長装置 | |
EP3726563A1 (en) | Film formation device | |
JP2021039994A (ja) | 気相成長装置の基板搬送機構及び基板搬送方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210628 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220329 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220523 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220712 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220901 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220913 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220926 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7159986 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |