JP2014086688A - エピタキシャル成長装置 - Google Patents
エピタキシャル成長装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 89
- 239000012495 reaction gas Substances 0.000 claims abstract description 70
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 238000000926 separation method Methods 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 70
- 238000010926 purge Methods 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000004891 communication Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
【解決手段】 エピタキシャル成長装置は、基板を載置する基板載置部、光透過性を有する天井板、及び側壁部から画成される反応室と、反応室外部に設置され、反応室内に載置された基板を前記天井板を介して加熱する加熱手段と、反応室内に基板の水平方向に対して平行に反応ガスを導入する反応ガス導入手段と、を備え、天井板の中心と前記基板載置部との距離が、10mm未満である。
【選択図】図8
Description
本発明の実施形態1に係るエピタキシャル成長装置について図1、2を用いて説明する。
本発明の別の実施形態について図7を用いて説明する。
以下、実施例により発明の詳細について説明する。
第1原料ガス(トリクロロシラン)流量 8.5SLM
第2原料ガス(水素)流量 80.0SLM
パージガス(水素)流量 15.0SLM
成長時間 600.0秒
成長温度 1100.0℃
回転速度 20.0RPM
従来のエピタキシャル成長装置(基板表面と天井板21との距離Hは20mm、溝部75はなく、サセプタリングは1部材からなる)により、第2原料ガスの流量を34.0SLM、回転速度を35.0RPMとした点以外は、実施例1と同一の成長条件に基づいてエピタキシャル成長を行った。
従来のエピタキシャル成長装置(基板表面と天井板21との距離Hは20mm、溝部75はなく、サセプタリングは1部材からなる)により、第2原料ガスの流量を34.0SLM、回転速度を35.0RPMとした点以外は、実施例2と同一の成長条件に基づいてエピタキシャル成長を行った。
従来のエピタキシャル成長装置(基板表面と天井板21との距離Hは20mm、溝部75はなく、サセプタリングは1部材からなる)により、第2原料ガスの流量を34.0SLM、回転速度を35.0RPMとした点以外は、実施例3と同一の成長条件に基づいてエピタキシャル成長を行った。
2 反応室
3 サセプタ
4 側壁部
5 天井部
6 サセプタ支持部
7 サセプタリング
11 第1リング
12 第2リング
13 フランジ部
21 天井板
22 支持部
23 加熱手段
24 貫通穴
25 突出部
30 基板搬出口
31 上部側壁部
32 下部側壁部
33 載置面
34 第1凹部
35 間隙
36 第1凸部
37 第2凹部
38 間隙
39 第2凸部
41 反応ガス供給路
42 ガス排出路
43 壁面
44 パージ孔
45 載置台
51 挟持部
52 供給側連通路
53 排出側連通路
54 反応ガス導入部
55 整流板
56 孔部
57 ガス排出部
61 装置底部
62 加熱手段
63 軸部
64 反応室下部
71 第1供給路
72 第2供給路
73 第3供給路
74 壁面
75 溝部
81、82、83 領域
91 段差部
92 離間部
W 基板
Claims (9)
- 基板を載置する基板載置部、光透過性を有する天井板、及び側壁部から画成される反応室と、
前記反応室外部に設置され、前記反応室内に載置された基板を前記天井板を介して加熱する加熱手段と、
前記反応室内に基板の水平方向に対して平行に反応ガスを導入する反応ガス導入手段と、を備え、
該天井板の中心と前記基板載置部に載置された基板との距離が、10mm未満となるように構成されたことを特徴とするエピタキシャル成長装置。 - 前記天井板は、上面視において貫通穴が形成された環状の支持部に固定され、
該支持部の貫通穴は、該基板側に向かってその径が徐々に小さくなり、この基板側の端部に前記天井板が固定されていることを特徴とする請求項1記載のエピタキシャル成長装置。 - 前記側壁部には、前記反応室内に反応ガスを供給する供給路が形成され、
前記供給路は、前記反応ガス導入手段から導入された反応ガスが衝突する壁部を有し、
該壁部の少なくとも両端部には、反応ガスの流れ方向に沿った整流溝が設けられていることを特徴とする請求項1又は2に記載のエピタキシャル成長装置。 - 前記整流溝は、前記供給路に対し前記壁部とは逆側の面で対向する整流板の長手方向に一列に列設された孔部に対し、それぞれ対向するように設けられていることを特徴とする請求項3に記載のエピタキシャル成長装置。
- 前記整流板は、列設された孔部が複数の領域毎に形成されており、該領域のうち、両端に位置する領域の孔部に対応して前記整流溝が設けられていることを特徴とする請求項4記載のエピタキシャル成長装置。
- 前記整流溝は、溝の中心が円環状の側壁部の中心を向くように設けられていることを特徴とする請求項3〜5のいずれか一項に記載のエピタキシャル成長装置。
- 前記基板載置部の外周には、サセプタリングが設けられ、
サセプタリングは、サセプタの外周に離間して設けられる第1リング部と、該第1リング部の内周側に設けられ、開放された凹部に設置される第2リング部とからなることを特徴とする請求項1〜6のいずれか一項に記載のエピタキシャル成長装置。 - 前記第2リング部は、前記サセプタと前記第1リング部との離間部に臨んで設けられていることを特徴とする請求項7記載のエピタキシャル成長装置。
- 前記第2リング部は、前記サセプタと前記第1リング部との離間部を覆って設けられていることを特徴とする請求項8記載のエピタキシャル成長装置。
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012237109A JP5343162B1 (ja) | 2012-10-26 | 2012-10-26 | エピタキシャル成長装置 |
US13/762,176 US10443129B2 (en) | 2012-10-26 | 2013-02-07 | Epitaxial growth device |
SG10201703435SA SG10201703435SA (en) | 2012-10-26 | 2013-10-28 | Epitaxial growth apparatus |
CN201380054803.9A CN105103276B (zh) | 2012-10-26 | 2013-10-28 | 外延生长装置 |
SG11201502959PA SG11201502959PA (en) | 2012-10-26 | 2013-10-28 | Epitaxial growth apparatus |
EP13848894.5A EP2913844B1 (en) | 2012-10-26 | 2013-10-28 | Epitaxial growth apparatus |
KR1020207025651A KR102300579B1 (ko) | 2012-10-26 | 2013-10-28 | 에피택셜 성장장치 |
PCT/JP2013/079126 WO2014065428A1 (ja) | 2012-10-26 | 2013-10-28 | エピタキシャル成長装置 |
KR1020157012864A KR102155162B1 (ko) | 2012-10-26 | 2013-10-28 | 에피택셜 성장장치 |
KR1020217028138A KR102457101B1 (ko) | 2012-10-26 | 2013-10-28 | 에피택셜 성장장치 |
EP18196541.9A EP3456860A3 (en) | 2012-10-26 | 2013-10-28 | Epitaxial growth apparatus |
CN201810343931.XA CN108728823B (zh) | 2012-10-26 | 2013-10-28 | 外延生长装置 |
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JP2012237109A JP5343162B1 (ja) | 2012-10-26 | 2012-10-26 | エピタキシャル成長装置 |
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JP5343162B1 JP5343162B1 (ja) | 2013-11-13 |
JP2014086688A true JP2014086688A (ja) | 2014-05-12 |
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US (1) | US10443129B2 (ja) |
EP (2) | EP2913844B1 (ja) |
JP (1) | JP5343162B1 (ja) |
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CN (2) | CN105103276B (ja) |
SG (2) | SG10201703435SA (ja) |
WO (1) | WO2014065428A1 (ja) |
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Cited By (12)
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US20160281261A1 (en) * | 2015-03-25 | 2016-09-29 | Applied Materials, Inc. | Chamber components for epitaxial growth apparatus |
US10544518B2 (en) * | 2015-03-25 | 2020-01-28 | Applied Materials, Inc. | Chamber components for epitaxial growth apparatus |
JP2018518592A (ja) * | 2015-05-27 | 2018-07-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高成長率のepiチャンバのための遮熱リング |
JP7008509B2 (ja) | 2015-05-27 | 2022-02-10 | アプライド マテリアルズ インコーポレイテッド | 高成長率のepiチャンバのための遮熱リング |
WO2020261789A1 (ja) * | 2019-06-27 | 2020-12-30 | 株式会社Sumco | エピタキシャル成長装置およびエピタキシャルウェーハの製造方法 |
JP2021005680A (ja) * | 2019-06-27 | 2021-01-14 | 株式会社Sumco | エピタキシャル成長装置およびエピタキシャルウェーハの製造方法 |
KR20220011718A (ko) * | 2019-06-27 | 2022-01-28 | 가부시키가이샤 사무코 | 에피택셜 성장 장치 및 에피택셜 웨이퍼의 제조 방법 |
CN114026273A (zh) * | 2019-06-27 | 2022-02-08 | 胜高股份有限公司 | 外延生长装置及外延晶片的制造方法 |
JP7159986B2 (ja) | 2019-06-27 | 2022-10-25 | 株式会社Sumco | エピタキシャル成長装置およびエピタキシャルウェーハの製造方法 |
CN114026273B (zh) * | 2019-06-27 | 2024-01-09 | 胜高股份有限公司 | 外延生长装置及外延晶片的制造方法 |
KR102644060B1 (ko) * | 2019-06-27 | 2024-03-05 | 가부시키가이샤 사무코 | 에피택셜 성장 장치 및 에피택셜 웨이퍼의 제조 방법 |
JP2021068871A (ja) * | 2019-10-28 | 2021-04-30 | 株式会社Sumco | エピタキシャル成長装置およびエピタキシャルウェーハの製造方法 |
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EP3456860A3 (en) | 2019-05-08 |
US20140116340A1 (en) | 2014-05-01 |
KR20200106564A (ko) | 2020-09-14 |
WO2014065428A1 (ja) | 2014-05-01 |
EP2913844B1 (en) | 2018-09-26 |
CN108728823A (zh) | 2018-11-02 |
CN108728823B (zh) | 2020-09-15 |
SG10201703435SA (en) | 2017-05-30 |
US10443129B2 (en) | 2019-10-15 |
KR102457101B1 (ko) | 2022-10-19 |
KR20150074072A (ko) | 2015-07-01 |
CN105103276A (zh) | 2015-11-25 |
CN105103276B (zh) | 2018-05-18 |
EP2913844A4 (en) | 2016-07-13 |
EP3456860A2 (en) | 2019-03-20 |
JP5343162B1 (ja) | 2013-11-13 |
KR102300579B1 (ko) | 2021-09-08 |
EP2913844A1 (en) | 2015-09-02 |
SG11201502959PA (en) | 2015-05-28 |
KR102155162B1 (ko) | 2020-09-21 |
KR20210111361A (ko) | 2021-09-10 |
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