JP6169809B2 - エピタキシャルウェハ成長装置 - Google Patents
エピタキシャルウェハ成長装置 Download PDFInfo
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- JP6169809B2 JP6169809B2 JP2016555424A JP2016555424A JP6169809B2 JP 6169809 B2 JP6169809 B2 JP 6169809B2 JP 2016555424 A JP2016555424 A JP 2016555424A JP 2016555424 A JP2016555424 A JP 2016555424A JP 6169809 B2 JP6169809 B2 JP 6169809B2
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Description
工程ガスを流してエピタキシャル層を成長させるエピタキシャルウェハ成長装置であって、
前記工程ガスが流れる領域を提供する反応チャンバと、
前記反応チャンバの側面部を取り囲む上部ライナー及び下部ライナーと、
前記反応チャンバの中心部に配置され、ウェハが安着されるサセプタと、
前記サセプタと同一平面上に配置され、前記下部ライナーの上面に安着され、前記サセプタと離隔する予熱リングと、
前記予熱リングの下部に形成され、前記下部ライナーの側面に接触する固定部材と、
を含み、
前記固定部材は、前記下部ライナーの側面と円周方向の接触面を有する突出部から構成され、
前記突出部は、前記予熱リングと前記サセプタが一定間隔を持つように固定される、
ことを特徴とするエピタキシャル成長装置。
前記固定部材は、前記下部ライナーの側面と連続的な接触面を有する円形リング状である、
ことを特徴とする付記1に記載のエピタキシャル成長装置。
前記固定部材は、少なくとも3つ以上形成され、前記下部ライナーの側面と少なくとも3つ以上の接触面を有する、
ことを特徴とする付記1に記載のエピタキシャル成長装置。
前記固定部材は、45度の間隔で前記予熱リングの下部の円周方向に沿って8つが形成され、前記下部ライナーの側面と8つの接触面を有する、
ことを特徴とする付記3に記載のエピタキシャル成長装置。
前記固定部材は、前記サセプタを中心に相互対称する位置に形成される、
ことを特徴とする付記1に記載のエピタキシャル成長装置。
前記固定部材は、前記サセプタを中心に周期的な位置に形成される、
ことを特徴とする付記1に記載のエピタキシャル成長装置。
前記接触面は、前記下部ライナーの側面形状と一致する曲面形状である、
ことを特徴とする付記1に記載のエピタキシャル成長装置。
前記固定部材は、前記予熱リングと一体型である、
ことを特徴とする付記1に記載のエピタキシャル成長装置。
前記固定部材は、前記予熱リングと脱着が可能な分離型である、
ことを特徴とする付記1に記載のエピタキシャル成長装置。
前記予熱リングの前記下部ライナーの上面と接触する領域には、前記予熱リングの内部が所定深さ切削された溝部が形成される、
ことを特徴とする付記1に記載のエピタキシャル成長装置。
前記溝部は、前記下部ライナーの上面と非接触の状態で、前記予熱リングの内部で円周方向に沿って連続的に形成される、
ことを特徴とする付記10に記載のエピタキシャル成長装置。
前記溝部は、円形帯状を有する連続的な空間である、
ことを特徴とする付記11に記載のエピタキシャル成長装置。
前記溝部は、前記下部ライナーの上面と非接触の状態で、前記予熱リングの内部で円周方向に沿って周期的に形成される、
ことを特徴とする付記10に記載のエピタキシャル成長装置。
Claims (13)
- 工程ガスを流してエピタキシャル層を成長させるエピタキシャルウェハ成長装置であって、
前記工程ガスが流れる領域を提供する反応チャンバと、
前記反応チャンバの側面部を取り囲む上部ライナーと、
前記反応チャンバの側面部を取り囲んで配置されたリング状の下部ライナーであって、上面に外周部から所定の間隔を隔てて形成された段部を備える下部ライナーと、
前記反応チャンバの中心部に配置され、ウェハが安着されるサセプタと、
前記サセプタと同一平面上に配置され、前記下部ライナーの上面に安着され、前記サセプタと離隔する予熱リングと、
前記予熱リングの下部に形成され、前記予熱リングの外周部が前記下部ライナーの前記段部の内周壁から所定の間隔を隔てて配置された状態で、前記下部ライナーのリングの内周壁に接触する固定部材と、
を含み、
前記固定部材は、前記下部ライナーのリングの内周壁と円周方向の接触面を有する突出部から構成され、
前記突出部は、前記予熱リングと前記サセプタが一定間隔を持つように固定される、
ことを特徴とするエピタキシャル成長装置。 - 前記固定部材は、前記下部ライナーのリングの内周壁と連続的な接触面を有する円形リング状である、
ことを特徴とする請求項1に記載のエピタキシャル成長装置。 - 前記固定部材は、少なくとも3つ以上形成され、前記下部ライナーのリングの内周壁と少なくとも3つ以上の接触面を有する、
ことを特徴とする請求項1に記載のエピタキシャル成長装置。 - 前記固定部材は、45度の間隔で前記予熱リングの下部の円周方向に沿って8つが形成され、前記下部ライナーのリングの内周壁と8つの接触面を有する、
ことを特徴とする請求項3に記載のエピタキシャル成長装置。 - 前記固定部材は、前記サセプタを中心に相互対称する位置に形成される、
ことを特徴とする請求項1に記載のエピタキシャル成長装置。 - 前記固定部材は、前記サセプタを中心に周期的な位置に形成される、
ことを特徴とする請求項1に記載のエピタキシャル成長装置。 - 前記接触面は、前記下部ライナーのリングの内周壁の形状と一致する曲面形状である、
ことを特徴とする請求項1に記載のエピタキシャル成長装置。 - 工程ガスを流してエピタキシャル層を成長させるエピタキシャルウェハ成長装置であって、
前記工程ガスが流れる領域を提供する反応チャンバと、
前記反応チャンバの側面部を取り囲む上部ライナー及び下部ライナーと、
前記反応チャンバの中心部に配置され、ウェハが安着されるサセプタと、
前記サセプタと同一平面上に配置され、前記下部ライナーの上面に安着され、前記サセプタと離隔する予熱リングと、
前記予熱リングの下部に形成され、前記下部ライナーの側面に接触する固定部材と、
を含み、
前記固定部材は、前記下部ライナーの側面と円周方向の接触面を有する突出部から構成され、
前記突出部は、前記予熱リングと前記サセプタが一定間隔を持つように固定され、
前記固定部材は、前記予熱リングと一体型である、
ことを特徴とするエピタキシャル成長装置。 - 前記固定部材は、前記予熱リングと脱着が可能な分離型である、
ことを特徴とする請求項1に記載のエピタキシャル成長装置。 - 前記予熱リングの前記下部ライナーの上面と接触する領域には、前記予熱リングの内部が所定深さ切削された溝部が形成される、
ことを特徴とする請求項1に記載のエピタキシャル成長装置。 - 前記溝部は、前記下部ライナーの上面と非接触の状態で、前記予熱リングの内部で円周方向に沿って連続的に形成される、
ことを特徴とする請求項10に記載のエピタキシャル成長装置。 - 前記溝部は、円形帯状を有する連続的な空間である、
ことを特徴とする請求項11に記載のエピタキシャル成長装置。 - 工程ガスを流してエピタキシャル層を成長させるエピタキシャルウェハ成長装置であって、
前記工程ガスが流れる領域を提供する反応チャンバと、
前記反応チャンバの側面部を取り囲む上部ライナー及び下部ライナーと、
前記反応チャンバの中心部に配置され、ウェハが安着されるサセプタと、
前記サセプタと同一平面上に配置され、前記下部ライナーの上面に安着され、前記サセプタと離隔する予熱リングと、
前記予熱リングの下部に形成され、前記下部ライナーの側面に接触する固定部材と、
を含み、
前記固定部材は、前記下部ライナーの側面と円周方向の接触面を有する突出部から構成され、
前記突出部は、前記予熱リングと前記サセプタが一定間隔を持つように固定され、
前記予熱リングの前記下部ライナーの上面と接触する領域には、前記予熱リングの内部が所定深さ切削された溝部が形成され、
前記溝部は、前記下部ライナーの上面と非接触の状態で、前記予熱リングの内部で円周方向に沿って周期的に形成される、
ことを特徴とするエピタキシャル成長装置。
Applications Claiming Priority (3)
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KR1020130143993A KR101539298B1 (ko) | 2013-11-25 | 2013-11-25 | 에피택셜 웨이퍼 성장 장치 |
KR10-2013-0143993 | 2013-11-25 | ||
PCT/KR2014/008282 WO2015076487A1 (ko) | 2013-11-25 | 2014-09-03 | 에피택셜 웨이퍼 성장 장치 |
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JP2016541127A JP2016541127A (ja) | 2016-12-28 |
JP6169809B2 true JP6169809B2 (ja) | 2017-07-26 |
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US (1) | US20160273128A1 (ja) |
JP (1) | JP6169809B2 (ja) |
KR (1) | KR101539298B1 (ja) |
CN (1) | CN105765113A (ja) |
DE (1) | DE112014005368T5 (ja) |
WO (1) | WO2015076487A1 (ja) |
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KR101125738B1 (ko) * | 2010-03-17 | 2012-03-27 | 주식회사 엘지실트론 | 서셉터 및 이를 사용하는 에피텍셜 반응기 |
DE102011007632B3 (de) * | 2011-04-18 | 2012-02-16 | Siltronic Ag | Verfahren und Vorrichtung zum Abscheiden einer von Prozessgas stammenden Materialschicht auf einer Substratscheibe |
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KR20150061104A (ko) | 2015-06-04 |
KR101539298B1 (ko) | 2015-07-29 |
DE112014005368T5 (de) | 2016-08-04 |
WO2015076487A1 (ko) | 2015-05-28 |
JP2016541127A (ja) | 2016-12-28 |
US20160273128A1 (en) | 2016-09-22 |
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