JP2019528225A - 気相または液相エピタキシーを使用したＧａＮ肥厚化用のシードウエハ - Google Patents

気相または液相エピタキシーを使用したＧａＮ肥厚化用のシードウエハ Download PDF

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JP2019528225A
JP2019528225A JP2019505361A JP2019505361A JP2019528225A JP 2019528225 A JP2019528225 A JP 2019528225A JP 2019505361 A JP2019505361 A JP 2019505361A JP 2019505361 A JP2019505361 A JP 2019505361A JP 2019528225 A JP2019528225 A JP 2019528225A
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substrate
layer
energy
cutting
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JP2019528225A5 (enExample
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ヘンリー，フランソワ・ジェイ
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キューエムエイティ・インコーポレーテッド
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    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate

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