TW201029049A - Process for modifying a substrate - Google Patents

Abstract

The invention relates to a process for modifying a substrate (10) comprising: (a) providing an initial substrate (10) having a face (10b) for bonding and an opposing face (10r); (b) providing a support substrate (25); wherein either the bonding face (10b) of the initial substrate (10), and/or a face of the support substrate (25), is provided with an electromagnetic radiation absorbing layer (24), wherein the support substrate (25) is substantially transparent to a wavelength of electromagnetic radiation (c) performing bonding to join the bonding face (10b) of the initial substrate (10) to the support substrate (25) via the electromagnetic radiation absorbing layer (24); (e) carrying out irradiation of the electromagnetic radiation absorbing layer (24) through the substantially transparent support substrate (25) to induce separation of the support substrate (25).

Description

201029049 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a method for modifying a substrate. In particular, the present invention provides several methods for connecting and separating semiconductor layers and substrates, for example, for forming a three-dimensional stacked "on-wafer system" device, or for transmitting photoelectrons and (optical) voltaic components. The layer material may be selected, for example, from the group lv material (Si, Ge...), the lli/ν family material (GaN, InGaN, 111(}仏) and the materials may be polar, non-polar or semi-polar, depending on the application. In a particular embodiment, the present invention provides a method of facilitating the removal of an intermediate substrate that is necessary for the fabrication of a particular semiconductor electronic device. The present invention further provides for "progress" and ubiquitous importance for facilitating proximity to a semiconductor layer, and The device of the III-N material layer in a specific embodiment. The method of the "back" surface has a general application, and the present invention can be applied to manufacturing. [Prior Art] In the field of semiconductor manufacturing, it is often necessary to connect and/or remove in practice. Films and/or layers of semiconductors and/or insulating materials. On the one hand, it may be necessary to prepare a final stack structure containing three-dimensional designs of electronic, photovoltaic and/or optoelectronic components. On the other hand, films of high purity materials and high crystalline quality It can be properly processed on the support substrate and must be configured to transport the active substrate from the initial support substrate to the final support substrate. Despite the occurrence of lattice mismatch and / Or the problem of increased coefficient of thermal expansion, some types of half-V body materials cannot be provided in a bulk or free-standing substrate and must be processed on a support substrate. A method is needed to remove the functionalized semiconductor material layer from its support. 141918.doc -4- 201029049 In the field of functionalized semiconductor layers (eg layers), layer transfer methods can be used. (4) The functionalization of such semiconductor layers can involve electronic circuits, photovoltaic devices (eg, containing Ge seed layer and three-contact active layer) and/or optoelectronic component. When the processed semiconductor layer is on a support-specific type of functionally modified-support substrate, it can be relatively easily exposed, operated and Bonding the "front" & "back" side of the semiconductor layer allows functional elements to be introduced, and such functional elements will be incorporated and subsequently re-exposed as needed. Because & Steps on one of the thin layers on the initial support substrate may introduce a t sub-circuit, and then the exposed and functional "front" surface may be bonded to an intermediate substrate. Supporting the substrate such that other circuitry can be fabricated on the "back" side of the functional thin layer. The exposed "back" side can be further transferred to a support such as a functionalized center adapted to operate the generation In addition, for example, for heat dissipation. In addition, the Group III to Group V materials such as inGaAs 'InP or InAlAs are extremely effective for solar cell applications, and hi-nitride materials such as GaN, AlGaN or InGaN in the semiconductor industry. It is of great interest for use in illuminating devices such as light-emitting diodes, laser diodes and related devices. GaN is a useful material for optoelectronic applications as well as high-frequency, high-power electronic devices. It is important to provide a low display quantity. A GaN or InGaN layer with crystalline defects and high quality surface. Of interest in these fields of technology are several methods of providing III-V and III-N materials on a variety of surface and support materials. In the technique in which the III-V group is grown on the surface of a substrate, the high crystal quality of the grown substrate and the appropriate lattice parameters are necessary for growing a sufficient quality III-V group, 141918.doc 201029049 which limits The choice of the underlying seed crystal support substrate for the bismuth-V material. In systems where etching techniques are approached to the family of layers, this can prove problematic and result in degradation of the 111-¥ family of materials. The particular surface that can expose the III-N substrate is also of interest. In fact, for a polar c-plane III-N material, there is usually a specific atom-terminated surface, such that one surface is terminated by a component from the III group, and the other The surface is terminated by a nitrogen atom. SUMMARY OF THE INVENTION In order to solve the above problems, the present invention provides a method for modifying a substrate (10), comprising: providing an initial substrate (1〇), the initial substrate (1〇) Having a surface for bonding (1〇b) and an opposite surface (1〇Γ); (b) providing a supporting substrate (25); wherein the bonding surface (1〇b) of the initial substrate (10) or the The surface of the support substrate (25) is provided with an electromagnetic radiation absorbing layer (24), wherein the support substrate (25) is substantially transparent to the wavelength of the electromagnetic radiation (10); (c) bonding to pass the electromagnetic radiation absorbing layer (24) connecting the bonding surface (10b) of the initial substrate (1) to the supporting substrate (25); and (e) transmitting the electromagnetic radiation absorbing layer through the substantially transparent supporting substrate (25) (24) Irradiation is performed to cause separation of the support substrate (25). The invention provides a method for modifying a substrate (1), comprising: (a) providing a substrate comprising: a • a branch substrate (25), the substrate substrate (25) for electromagnetic radiation The wavelength is substantially transparent; 141918.doc -6 · 201029049 b•-layer (aa), the layer (aa) is bonded to the support substrate (25); and c. electromagnetic radiation absorbing layer (24), the electromagnetic radiation An absorbing layer (24) is located between the support substrate and the layer (aa); (b) illuminating the electromagnetic radiation absorbing layer (24) through the substantially transparent supporting substrate (25) to cause the support Separation of the substrate (25). Embodiments Fig. 1 is a schematic view showing a general method of the present invention. As shown in Fig. 1, the present invention combines the bonding step (S1 in Fig. 1) with the irradiation step (S2) of the bonding entity having electromagnetic radiation (e.g., visible light and ultraviolet radiation). Bonding of layers such as hai may involve molecular, eutectic, thermal, pressurized or anodic interfaces. For example, bonding may be achieved using one or more oxide bonding layers (not shown in the figure), which may be added to the substrate to be bonded One or both sides of the faces. A suitable example of a material for the oxide bonding layer is cerium oxide (si 〇 2). The cerium oxide material for bonding purposes may be provided in layers by heat or by chemical vapor phase chemical φ deposition techniques such as LPCVD or PECVD. The electromagnetic radiation absorbing layer (24) is characterized in that it is selected to absorb electromagnetic radiation emitted by a laser source of a selected wavelength, for example, and to allow separation of the bonded body under the effect of the absorbed energy. Therefore, in general, in the method for modifying a substrate (1) of the present invention, the separation of the crucible supporting substrate (25) of step e) is attributed to the electromagnetic radiation attracting layer ( 24) Chemical and/or physical changes. "Separation of the joined body" means that the bonding energy of the elements forming the 戎-joining entity after application of the electromagnetic radiation is weaker than before the application of electromagnetic radiation 141918.doc 201029049. If the result of the fact that the elements are indeed detached from each other is indeed required, additional energy such as mechanical force is required. Depending on the nature of the absorbing layer, the absorbed energy will cause different effects, such as atomic vibration, sublimation, specific diffusion or formation of a gas, as described above, which itself causes separation or chemical reaction. Therefore, mechanisms involving pure thermal effects and photochemistry can follow this separation mechanism. In the method of the present invention, the absorbing layer (24) may suitably comprise at least one material selected from the group consisting of: SixNy: H, called team,

GaN, AlN, InN, or 匕Ga and one or more mixed nitrides, or polycrystalline germanium, amorphous germanium (hydrogen-rich) or crystalline germanium. In the variant, a plurality of absorber layers (24) can be introduced and embedded in the tie layer such that multiple passes for several subsequent separations can be performed. The laser radiation is preferably implemented throughout the framework of the present invention throughout the support substrate (25). Thus, the support substrate (25) must be substantially wavelength dependent for the visible and/or ultraviolet radiation to be used to perform the separation mechanism. Transparent, that is, the material of the support substrate has a weak spectral absorption coefficient of, for example, less than about i〇1 cm· at the wavelength used, or a forbidden optical tape having a larger material than the absorption layer (24). The absorbing layer (24) may suitably be of the type NixN material of the SixNy:H, amorphous form, Si or, for example, deposited in a polycrystalline form (the latter being less expensive than the single crystal form in the industry). These materials allow the radiation to be performed at a wavelength that is still above the absorption wavelength of a typical support material. In the present invention, it is also appropriate to use 111 masses as the layer (24) for absorbing electromagnetic radiation such as visible light and/or ultraviolet light (four). If the substrate, for example, the initial substrate (1〇) itself is a m_N material to be treated for inductive function, I419l8.doc 201029049 preferably uses the same III-N material layer as the absorption layer p4) and the two III-N layers (The functionalized layer and the sacrificial electromagnetic radiation absorbing layer) are separated by a bonding scrap (for example, a ceria bonding layer). In the ΠΙ_Ν material that can be used as an absorbing layer, one can quote GaN (the absorption band below 360 nm due to the forbidden band of 3.4 eV), A1N (because of the forbidden band of 6 2 eV, lower than 198 nm) ), InN (because of the banned band of 〇·7 eV, below 230 nm).

Nd/YAG or excimer lasers can be used to cause decomposition or other effects of this electromagnetic radiation absorbing layer (24) which can result in separation. A ternary or quaternary nitride material of the combination of gallium and indium may also be used as the material of an electromagnetic radiation absorbing layer (24), such as AlGaN or InGaN. Nitride materials are particularly useful because they appear to be decomposable to produce gaseous gas. The forbidden band defines a clear threshold for one of the absorption wavelengths at which point the material exhibits a transition from almost completely transparent to almost complete absorption. In addition, its glare is much higher than its decomposition temperature, and when it is melted, etc.? Pick up the minimum incidental damage to the surrounding substrate. In order for the separation mechanism to be operable, the support substrate (25) must be substantially transparent or have a high transmission for the electromagnetic radiation, such as ultraviolet and/or visible light, in the wavelength region that will be used to irradiate the absorbing layer (24). . The preferred minimum thickness of the absorbent layer (24) is 1 nanometer. When depositing the absorbing layer, care is taken to avoid forming (several) layers on both sides of the support substrate. Even an absorbing layer formed on the rear side of the d-support substrate can completely absorb the radiation' to interfere with the absorption of the embedded absorbing layer (24) and can hinder the separation step. For the support substrate (25), the use of sapphire (Al2〇3) is appropriately selected 141918.doc 201029049, because high transmittance can be observed at a wavelength higher than 350 nm corresponding to the usual use of a laser source. . Sapphire is also suitable for shorter wavelengths. Other suitable options for the support substrate (25) include materials made of at least one of the following types: LiTa〇3 (substantially transparent at wavelengths above 270 nm), L!Nb〇3 (above It is substantially transparent at a wavelength of 28 〇 nm and is substantially transparent at wavelengths above 200 nm) or glass. Other materials are also suitable for knowing that the knife is away from ' even if it does not exhibit the same high transmission value as listed above, but then requires higher electromagnetic radiation energy, which is undesirable in an industrial environment. In the present invention, the electromagnetic radiation absorbing layer (24) may be connected to the support substrate (25) via a bonding layer, such as an oxide bonding layer. However, in an advantageous embodiment, the electromagnetic radiation absorbing layer (24) is in direct contact with the support substrate (25) without the need for an oxide bonding layer as an intermediate medium. In a preferred embodiment of the invention, in the method of the invention for modifying a substrate (10), after step a) and before step e), a portion of the initial substrate is removed to form One layer (aa). An example of this method is schematically illustrated in Figure 2, wherein after the bonding step s 1 in this example, the initial substrate (1 〇) is by, for example, grinding, polishing, SMART CUT®, by laser stripping technique. Or partially thinned or ablated by etching to produce a modified layer (aa) derived from the initial substrate (10). More preferably, in the present invention, the method for modifying a substrate comprises the step of removing a portion of the initial substrate to form a layer (aa), and then, in the step (d) after the method step c) above In the middle: - functionalize the layer (aa); and / or 1419I8.doc 201029049 - join the other layers to the layer (aa). These two preferred embodiments are schematically illustrated in Figures 3 and 4. In Fig. 3, '(aa), a functional layer (aa) (derived from the initial substrate (1 〇)). In the example illustrated in step S3 of FIG. 3 after step S1 and step S2 shown in FIG. 2, the step shown in the step (the function of the layer may be included in or formed on the layer (aa) with photovoltaic Areas of optics, optoelectronics, electronics and/or mechanical functions. It should also be understood that the functionalization step may comprise any technical step of altering the properties of the layer, such as forming a layer of material, a thin layer or a sufficiently thick layer of free standing, or forming an active In Fig. 4, in step S3, e.g., from step S1 and step S2 as shown in Fig. 2, other substrates (3〇) are bonded to the entity, the entity comprising a layer (aa), an electromagnetic radiation absorbing layer. (24) and the supporting substrate (25). In Fig. 4, the possibility that the layer (aa) can be functionalized is represented by the symbol (aa) / (aa). It is also possible to replace the layer (aa) or divide The support substrate (25) other than the layer (aa) contains regions having photovoltaic, optical, optoelectronic, electronic, and/or mechanical functions. The bonding can be performed to expose the exposed layer of the layer (aa) from the initial substrate Connect to the final substrate (3 〇) that has also been machined. Bonding can be performed, for example, by laminating the ceria bonding layer via the methods discussed above. If desired, the joint may also contain an electromagnetic radiation absorbing layer for subsequently separating the support substrate (30). According to an embodiment of the method of the present invention, the initial substrate (丨0) may be a bulk self-standing substrate. In an embodiment, the initial substrate (10) may include a surface layer (12) having a surface (10b) for bonding to the support substrate (25), and a bottom support substrate (U) as a template, the surface layer (12) deposited on the bottom support substrate (u) 141918.doc 201029049. The initial substrate (10) may also include a surface layer (12), an intermediate layer, and a bottom support substrate (11). In such systems, with or without an intermediate layer, the surface layer (12) and the wash substrate (10) (layer (aa) formed on the bulk substrate (10)) may suitably comprise a group selected from the group consisting of At least one of the group materials: GaN, InGaN, SiC, Si, Si(000) 'Si(lll), GaAs, ZnO, 曰AIN, AlGaN, InGaAs, InP, Ge, InAlAs. The layer (aa) may also be formed from a semiconductor material from the Group IV material (e.g., Si, Ge), the Group III/V material (polar or non-polar or semi-polar material such as GaN, InGaN, InGaAs). The initial substrate (1〇) to be used in the method of the present invention may suitably contain selected for matching a reasonable expansion coefficient and/or matching lattice parameters between the support and the surface layer (12). - a bottom support substrate (1), the surface layer (12) comprising sapphire (Al2〇3), LiTa03, LiNb03, MgO, Si,

SiC or a metal alloy containing one or more of Cr, Ni, Mo, and W. In embodiments having such a final substrate, such materials can also be used in the final substrate (30). In the case where the initial substrate (10) includes a surface layer (10) grown on the underlying supporting substrate (1), it is better to ensure a reasonable lattice matching between the initial seed supporting substrate (9) and the surface layer (12), This forms the layer (aa) to be introduced. For example, 1 兮矣; a ^ 〆 八 甲 这 这 这 这 这 这 表面 表面 表面 ’ ’ ’ 适当 适当 适当 适当 适当 适当 适当 适当 适当 适当 适当 适当 适当 适当 适当

Tt J package 3 for example: sapphire (αι2ο3),

SiC, Si (lll), GaAs, Ζη〇, crystalline Am. In the preferred method according to the present invention, in the example of the gentry, the method of thinning the initial substrate (10) to form the layer (aa) is used as a functionalization step. 141918.doc 201029049 The telecrystals can be performed, for example, on a layer (four) to obtain a thickness sufficient for one of the layers to be subsequently formed to become a free standing substrate. In another preferred embodiment, the implant is implanted at the initial substrate to provide a region defining the upper portion of the substrate (10) prior to lamination to the support substrate (25) via the absorbing absorption in step (4). A weak section, and the upper region is removed by splitting in the weak section. Thus, as shown schematically in Figure 5, in accordance with the method of the present invention -

In a preferred embodiment, the III-N material layer is withdrawn from the initial donor substrate using the 8-(10) technique. That is, the m_N material ((7) in Fig. 5 may initially exist on the bulk donor substrate (U in Fig. 4). As shown in Fig.!, in this case, it is shown that the mN material can be attached to the "template" (for example) Sapphire)

GaN. An alternative embodiment may use a III-N material attached to the support substrate via an intermediate bonding layer 'this configuration may represent GaN 〇s (bonded GaN on sapphire) 〇 performing ion implantation (Fig. 5, step Si), and Subsequent bonding to a second substrate (step S2 in Fig. 5) is performed to connect the surface (12) to the electromagnetic radiation absorbing layer (9) on the supporting substrate (25) through a bonding material layer (23). This bonding can also be carried out without the bonding material layer (23), directly between the supporting substrate, the absorbing layer (24) and the ruthenium-iridium material layer (12). The splitting of the weak section produced by ion implantation can then be achieved (Fig. 5 - step S3). Hydrogen ion implantation, hydrogen and helium ion co-implantation, and more generally light ion implantation, may be performed in a manner known to those skilled in the art. For implant energies ranging from 1 ke keV to 210 keV, a typical suitable hydrogen ion implantation dose for GaN is between lxlO 7 and 6 x 1 017 atoms/cm 2 . Implantation is usually 141918.doc •13· 201029049 between 20 ° C and 400 ° C 'better 5 〇. (: is performed at a temperature between 150 ° C. It is known to those skilled in the art how to adjust the implant to obtain the weak cross-sectional depth between 5 〇 nm and 1000 nm, and depending on the implantation conditions' In particular, the implanted ion dose is known to vary the temperature and duration of the thermal process with respect to the separation and splitting of the weak section. In step S4 of Figure 5, the exposure is due to the weak section splitting. The surface is bonded to a final substrate (30), in which case a final support substrate (31) and a bonding layer (33) are selected. Subsequently, in step S5 of Figure 5, the inclusion is from each initial, The entity of the elements of the second and third substrates is guided through the transparent support substrate (25) for electromagnetic radiation having a selected wavelength for absorption by the electromagnetic radiation absorbing layer (24) and causing the substrate (25) to separate. In the method schematically shown in Fig. 5, telecrystal growth (not shown in Fig. 5) can be performed on the thin layer (12f) to produce a substrate having a sufficient thickness (e.g., 'greater than 100 micrometers) to make it The weak cut Before the surface breaks, it becomes self-standing. Therefore, epitaxial growth can be performed before step S2, where the second substrate is bonded to the initial substrate via the surface layer (12f). In this case, the heat treatment due to epitaxial growth It must be lower than the heating process that causes the weak section to split. It is also possible to perform the growth of the crystal on the exposed layer after the step S3 of the weak section separation or after the step S5 of being separated by radiation absorption. It is not shown in Fig. 5 that "functionalization" can be formed in the region (12f) corresponding to the layer (aa) in order to form an area having photovoltaic, optical, photoelectric, electronic and/or mechanical action therein or thereon. In the final step S6 of the exemplary method, the bonding layer (23) of the mN material layer (12f) which has been previously layered (24) by the suction 141918.doc 14-201029049 can be removed in a slope. The layer (23) comprises cerium oxide, which layer may be suitably removed by dry etching or synergistic chemical etching, for example mechanical polishing using a dilute aqueous solution of hydrofluoric acid (HF) (10% of the grain). III-N material , such as in a template such as blue a stone-grown material exhibiting a zero-plane wurtzite structure having a gallium and a nitrogen plane. The upper surface is usually the gallium surface, and the bottom surface (adjacent to the growth substrate), the initial donor support substrate ( 1) is a nitrogen surface. In accordance with the above first preferred embodiment of the present invention as a method of applying to a IIIN material, a dual transfer is performed to expose the gallium surface in the final product, that is, at the beginning of the initial product The exposure is the same. Therefore, in the case where the protection target starts to be epitaxial from the nitrogen surface, at this stage, due to the risk of limiting the misalignment and cracking, it is possible to start the epitaxy again on the ΠΙ_Ν material. In the present invention, it is operable Any wafer of a specific diameter without any specific restrictions. In an advantageous embodiment, in the method of the invention, after the step (e), the joint surface of the initial substrate (10) which can be released by the irradiation of the electromagnetic radiation absorbing layer (24) in the step (e) Perform epitaxial or further functionalization on (1〇b). In a second preferred embodiment of the present invention, the structure of the method of the present invention can be obtained by ion implantation rain in a substrate such as bulk GaN, followed by epitaxial germanium-germanium materials such as inGaN. , which is carried out in a manner that does not exceed the energy required to split the substrate along the weak section generated by ion implantation, and then joins the GaN/InGaN material to an absorber layer on an intermediate substrate, and then along The weak section (similar to the 141918.doc 15 201029049 S3 in Figure 5) performs the fracture. It is also possible to perform implantation after the In(}aN layer of worms and before being covered by a layer, so that the worm crystal thermal budget is not limited. To ensure successful fracture with respect to the weak section, as in the second implementation For example, in step S2 of Figure 5, it is preferred to first join the implanted III-N compound to an intermediate support which hardens and strengthens the stacked body. This second embodiment can continue with inGaN Epitaxy has received attention, for example, in LED applications. For example, an InGaN layer can be epitaxially grown on a GaN germanium substrate, and then ion implantation can be performed in the inGaN. In the InGaN layer The exposed upper surface (which has gallium polarity) is bonded to an intermediate substrate having a bonding layer (23) and an absorbing layer (24). After the weak region created by ion implantation is split, the sacrificial intermediate is included The structure supporting the UV and/or visible light absorbing layer, the bonding layer and the InGaN layer may be bonded to a final supporting substrate (see step S4 of FIG. 5), which may be, for example, a sapphire substrate. Radiation through the middle Separation is performed by the support substrate (25) of the board, and an InGaN(R) substrate obtains a desired polarity on the upper surface for beginning further epitaxy. In an advantageous embodiment of the invention, as previously mentioned The bonding between the initial substrate (10) and the second substrate (25) can be performed using one or more layers of the SiO2 bonding layer. In an advantageous embodiment, the electromagnetic radiation absorbing layer is provided therewith. In order to extend the fully distinct layer extending over the length and width of the stacking entity to be prepared (so that the entire section is as shown in the drawings), one or more of the (etc.) bonding layers, such as oxide bonding layers, may be electromagnetically contained. At least one of the radiation absorbing materials is 141918.doc 201029049, and the electromagnetic radiation absorbing material comprises: team 1, SixNy: H,

A mixed nitride of one or more of Si3N4, GaN, AIN, InN, or In, and... In an embodiment of the third advantageous embodiment of the invention, it is schematically illustrated in Figure 6 that the -InGaN layer is transferred using a molecular bonding method and released by the electromagnetic radiation absorbing layer of the present invention. Providing an initial substrate in which an InGaN layer (12t) to be transferred is formed by epitaxy on a template, showing a GaN seed layer (12s) grown by epitaxial growth on, for example, a sapphire support substrate (11) . This is shown in step S1 of Fig. 6, in which the InGaN layers are collectively represented as a layer (12), and the bottom support substrate (Im) is sapphire. In a suitable method for carrying out the invention, the thickness of the 111 <3&> layer will be about 100 nm and the indium content will be on the order of 5% to 15%. The dislocation density in this layer is preferably less than 5 x 1 〇 8 / cm 2 . A GaN-based one-polar material epitaxially grown on a c-plane sapphire and the upper free surface is a gallium (Ga) plane. This polarity is preserved by the 111 (?3?^) grown thereon. In the subsequent step S2, the oxide bonding layer (si〇2, layer (13) in the figure) is laid out by an LPCVD technique. On the InGaN layer, a suitable thickness is about 300 nm. In a subsequent step S3, implantation of ions such as hydrogen and/or germanium can be performed through the oxide layer (13) and through the InGaN to generate a weak region of about 500 nm in depth, the weak region being located in the QaN seed layer. For this implantation, a dose of 4χ1017 atoms/cm2 is appropriate. In the subsequent step S4, an intermediate substrate is provided, The sequence includes: a support substrate (such as sapphire (25)), an absorber layer such as SixNy having a thickness of 141918.doc 201029049 and about 100 nm and deposited by PECVD technology, and a ruthenium dioxide bonding layer (23) ( Has a thickness of about 500 nm). The molecular bonding system is used to connect the initial and intermediate substrate entities via the contacted oxide layers (13 and 23). In the step (S5), the heat treatment may then cause the solid to be broken, removing the initial underlying initial support substrate (11) and a portion of the GaN seed layer. The surviving technique known to those skilled in the art is then used to remove the residual

GaN (between steps S5 and S6, and not shown in Fig. 6), and this exposes the face of the inGaN layer (12t or aa) having an N polarity. In the subsequent step S6, a six Ny layer having a thickness of about 5 Å was deposited by PECVD. This further electromagnetic radiation absorbing layer and/or adhesion layer is represented in Figure 6 by layer (34). A cerium oxide bonding layer having a thickness of about 5 Å to 3 μm is then deposited by an LPCVD or PECVD technique (step S7_the cerium oxide layer is indicated by 33). After preparing the surfaces for bonding (planarization, CMp, brushing, and optional plasma activation), the structure obtained in step S7 is contacted with the final support substrate of sapphire labeled (31) (step S8) ). Bonding enhanced heat treatment can be performed, including heating from 3 ° C to 950 ° C over a period of hours. Subsequently, in step S9, the electromagnetic radiation absorbing layer (24) can be irradiated by, for example, scanning a laser beam having a wavelength of 193 nm on the surface of the substrate to cause the intermediate support (25 and 24 combination) Decomposition and separation, edible b requires additional mechanical energy. The possible absorber layer residue p4) and the oxide bonding layer (13+23) are then removed by mechanical polishing such as dry etching or synergistic contact with dilute hydrofluoric acid, followed by the InGaN surface having Ga polarity (12t or aa) exposed 141918.doc 201029049 out. This can then be used as a substrate for further epitaxy of InGaN and/or other active layers. If desired, the absorbent layer (34) can be used as a separate layer for separating the support substrate (31) in subsequent use of the final entity. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a general method of the present invention; FIG. 2 is a schematic view showing an exemplary method of the present invention, in which a portion of an initial substrate (1 〇) is removed to form a new layer (aa). 3 and 4 are schematic views of an exemplary method of the present invention, wherein the layer (aa) is functionalized to produce a layer (aa) 1, and/or further layer bonded to the layer (aa); A schematic of a method of the present invention in which ion implantation and bonding to a final substrate are used; and Figure 6 is a schematic illustration of another example method of the present invention in which ion implantation is used and bonded to a final substrate. [Main component symbol description] 10 Initial substrate 10b Joint surface 10r Opposite surface 12 Surface layer 12f Thin layer 12s GaN planting layer 12t InGaN layer 23 Bonding material layer 24 Electromagnetic radiation absorbing layer 141918.doc -19- 201029049 25 Support substrate 30 Final substrate 31 support substrate 33 bonding layer 34 absorption layer aa layer aa' layer 141918.doc

Claims (1)

201029049 VII. Patent Application Range: 1. A method for modifying a substrate, comprising: (a) providing an initial substrate (1〇) having a surface for bonding (1〇) 10b) and an opposite surface (l〇r); (b) providing a supporting substrate (25); wherein the bonding surface (1〇b) of the initial substrate (10) and/or one side of the supporting substrate (25) Provided with an electromagnetic radiation absorbing layer (24) 'where the support substrate (25) is substantially transparent to the wavelength of the electromagnetic radiation; (c) engaging to pass the initial substrate (10) via the electromagnetic radiation absorbing layer (24) The bonding surface (10b) is connected to the support substrate (25); (e) the electromagnetic radiation absorbing layer (24) is irradiated through the substantially transparent supporting substrate (25) to cause the supporting substrate ( 25) Separation. 2. The method of claim 1, wherein the separation of the support substrate (25) in steps e) lj3 is due to chemistry and/or in the electromagnetic radiation absorbing layer (24). Physical changes. 3. The method of claim 1 or 2 for modifying a substrate, wherein a portion of the initial substrate is removed after step a) and preferably before the step of the step to form a layer (aa). 4. The method of claim 3 for modifying a substrate (1〇), which progresses after step c) comprises the step (d) of functionalizing the layer (aa) and/or bonding other layers or substrates To this layer (aa). A method for modifying a substrate (1), wherein the step (4) is included in or on the layer (aa) to form a region having photovoltaic, optical, optoelectronic, electronic, and/or mechanical functions. 141918.doc 201029049 6. The method of claim 3, wherein the layer (aa) and/or the support substrate (25) comprises photovoltaic, optical, optoelectronic, electronic, and/or mechanical functions. The area. 7. The method for modifying a substrate (1) according to any one of claims 4 to 6, wherein the step (4) comprises performing bonding to connect the exposed face of the substrate (1()) to a final substrate ( 30). 8. The method for modifying a substrate (1) according to any one of claims 1 to 7, wherein the initial substrate (10) is a large free-standing substrate. 9. The method for modifying a substrate (1) according to any one of claims 1 to 7, wherein the initial substrate (10) comprises a surface layer (12) and a bottom substrate (11) 'the surface layer U2) has a face (1〇b) for bonding to the branch substrate (9), and the bottom support substrate (1) is deposited as a template on which a surface layer (12) is deposited. 10. The method for modifying a substrate (10) according to any one of claims 1 to 7, wherein the initial substrate (10) comprises a surface layer 2), an intermediate layer and a bottom support substrate (11). 11. The method for modifying the substrate (10) of claim 4 to 1 () is used to perform a sufficient thickness on the layer (4) to be a self-standing reading. 12. The method for modifying a substrate (10) according to any one of the claims, wherein the surface (10)1 ion is penetrated in the initial substrate (10) before the two substrates (9) are joined via the electromagnetic radiation absorbing layer (9) in the step (4). Planting a person to provide a thin face, the thin (four) face with the (10)-upper region' and by splitting in the weak section (4) 141918.doc 201029049 the upper region. The method for modifying a substrate (10) according to any one of claims 1 to 12, wherein the initial substrate (10) comprises at least one material selected from the group consisting of: GaN, InGaN, SiC, Si , Si (000), Si (lll), GaAs, ZnO, crystalline AIN, AlGaN, InGaAs, InP, Ge, lnAIAs. The method for modifying a substrate (1) according to any one of claims 1 to 13, wherein the substantially transparent support substrate (25) is sapphire (Al2〇3), LiTa03, LiNb03, MgO or glass. The method for modifying a substrate (10) according to any one of claims 1 to 14, wherein the bottom support substrate (11) and/or the final substrate (3) comprises a support substrate 'the support The substrate includes sapphire (Al2〇3), LiTa03, LiNb03, MgO, Si, SiC, or a metal alloy containing one or more of Cr, Ni, Mo, and W. The method for modifying a substrate (1) according to any one of claims 1 to 15, wherein the electromagnetic radiation absorbing layer (24) and/or the layer (34) comprises: ritual, • SixNy: H, Si3N4, GaN 'AIN, InN or a mixed nitride or polycrystalline germanium of one or more of In, Ga and A1, amorphous germanium (hydrogen-rich) or single crystal. The method for modifying a substrate (1) according to any one of claims 1 to 16, wherein the bonding between the initial substrate (10) and the supporting substrate (25) is performed using one or The plurality of cerium oxide bonding layers are carried out. 18. The method of claim 17, wherein the one or more oxide bonding layers comprise at least one embedding region of the electromagnetic radiation absorbing material, the electromagnetic radiation absorbing material comprising :SixNy:H, SixNy, 141918.doc 201029049 Si3N4, GaN, AIN, InN, or a mixed nitride of one or more of In, Ga, and A1, or polycrystalline germanium, amorphous germanium (hydrogen-rich), or single crystal. The method for modifying a substrate (1) according to any one of claims 1 to 18, wherein the electromagnetic radiation absorbing layer (24) is in direct contact with the support substrate (25) without an oxide bonding The layer acts as an intermediate medium. 20. The method for modifying a substrate (10) according to any one of claims 4 to 18, wherein after the step (e), on the bonding surface (1〇b) of the initial substrate (1〇) Epitaxial or further functionalization is performed. In step (e), the initial substrate (1) is released by irradiation of the electromagnetic radiation absorbing layer (24). 21. A method for modifying a substrate, comprising: (A) providing a substrate comprising: a. a support substrate (25), the wavelength of the wavelength of the electromagnetic radiation Upper layer is transparent; b. layer (aa) 'this layer (aa) is bonded to the support substrate (25); and c. an electromagnetic radiation absorbing layer (24) on which the electromagnetic radiation absorbing layer (24) is Between the layer (aa); (B) illuminating the electromagnetic radiation absorbing layer (24) through the substantially transparent support substrate (25) to cause separation of the support substrate (25). 141918.doc