KR20190036538A - 기체상 또는 액상 에피택시를 이용한 gan 후막화를 위한 시드 웨이퍼 - Google Patents
기체상 또는 액상 에피택시를 이용한 gan 후막화를 위한 시드 웨이퍼 Download PDFInfo
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Images
Classifications
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662370169P | 2016-08-02 | 2016-08-02 | |
| US62/370,169 | 2016-08-02 | ||
| US201662378126P | 2016-08-22 | 2016-08-22 | |
| US62/378,126 | 2016-08-22 | ||
| US15/662,201 | 2017-07-27 | ||
| US15/662,201 US10186630B2 (en) | 2016-08-02 | 2017-07-27 | Seed wafer for GaN thickening using gas- or liquid-phase epitaxy |
| PCT/IB2017/054668 WO2018025166A1 (en) | 2016-08-02 | 2017-07-31 | Seed wafer for gan thickening using gas- or liquid-phase epitaxy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20190036538A true KR20190036538A (ko) | 2019-04-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020197004750A Withdrawn KR20190036538A (ko) | 2016-08-02 | 2017-07-31 | 기체상 또는 액상 에피택시를 이용한 gan 후막화를 위한 시드 웨이퍼 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10186630B2 (enExample) |
| EP (1) | EP3494248A1 (enExample) |
| JP (1) | JP2019528225A (enExample) |
| KR (1) | KR20190036538A (enExample) |
| CN (1) | CN109790642A (enExample) |
| WO (1) | WO2018025166A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12476108B2 (en) | 2019-05-30 | 2025-11-18 | Mitsubishi Chemical Corporation | GaN substrate wafer and production method for same |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180019169A1 (en) * | 2016-07-12 | 2018-01-18 | QMAT, Inc. | Backing substrate stabilizing donor substrate for implant or reclamation |
| FR3063176A1 (fr) * | 2017-02-17 | 2018-08-24 | Soitec | Masquage d'une zone au bord d'un substrat donneur lors d'une etape d'implantation ionique |
| US10020212B1 (en) | 2017-10-09 | 2018-07-10 | Oculus Vr, Llc | Micro-LED pick and place using metallic gallium |
| US10510532B1 (en) * | 2018-05-29 | 2019-12-17 | Industry-University Cooperation Foundation Hanyang University | Method for manufacturing gallium nitride substrate using the multi ion implantation |
| CN108878266B (zh) * | 2018-07-03 | 2020-09-08 | 北京大学 | 一种在多晶或非晶衬底上生长单晶氮化镓薄膜的方法 |
| CN111785609B (zh) * | 2019-04-04 | 2023-06-23 | 世界先进积体电路股份有限公司 | 半导体结构及其制造方法 |
| EP3754731A1 (en) * | 2019-06-21 | 2020-12-23 | Aledia | Method for local removal of semiconductor wires |
| US11011391B2 (en) * | 2019-07-03 | 2021-05-18 | Vanguard International Semiconductor Corporation | Semiconductor structure and method for fabricating the same |
| CN110600435A (zh) * | 2019-09-05 | 2019-12-20 | 方天琦 | 多层复合基板结构及其制备方法 |
| US20230141370A1 (en) * | 2020-03-20 | 2023-05-11 | The Regents Of The University Of Michigan | Semiconductor growth-anneal cycling |
| TWI728846B (zh) | 2020-06-19 | 2021-05-21 | 錼創顯示科技股份有限公司 | 發光半導體結構及發光半導體基板 |
| CN111668353B (zh) * | 2020-06-19 | 2021-12-17 | 錼创显示科技股份有限公司 | 发光半导体结构及半导体基板 |
| CN116802790A (zh) * | 2021-04-23 | 2023-09-22 | 华为技术有限公司 | 一种hemt器件及其制作方法、电子设备 |
| TWI785763B (zh) * | 2021-08-27 | 2022-12-01 | 合晶科技股份有限公司 | 複合基板及其製造方法 |
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| US12476108B2 (en) | 2019-05-30 | 2025-11-18 | Mitsubishi Chemical Corporation | GaN substrate wafer and production method for same |
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| EP3494248A1 (en) | 2019-06-12 |
| US10186630B2 (en) | 2019-01-22 |
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| CN109790642A (zh) | 2019-05-21 |
| JP2019528225A (ja) | 2019-10-10 |
| WO2018025166A1 (en) | 2018-02-08 |
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