TWI456795B - 半導體發光元件 - Google Patents

半導體發光元件 Download PDF

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Publication number
TWI456795B
TWI456795B TW099129501A TW99129501A TWI456795B TW I456795 B TWI456795 B TW I456795B TW 099129501 A TW099129501 A TW 099129501A TW 99129501 A TW99129501 A TW 99129501A TW I456795 B TWI456795 B TW I456795B
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TW
Taiwan
Prior art keywords
layer
semiconductor light
emitting device
iton
ito
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TW099129501A
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English (en)
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TW201131813A (en
Inventor
Toshihide Ito
Koichi Tachibana
Shinya Nunoue
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Toshiba Kk
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Publication of TW201131813A publication Critical patent/TW201131813A/zh
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Publication of TWI456795B publication Critical patent/TWI456795B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)

Claims (14)

  1. 一種半導體發光元件，其特徵為具有：基板；形成在前述基板上的n型半導體層；形成在前述n型半導體層上的活性層；形成在前述活性層上，且最上部為p型GaN層的p型半導體層；形成在前述p型GaN層上的ITON(氧氮化銦錫)層；形成在前述ITON層上的ITO(氧化銦錫)層；形成在前述ITO層上的一部分的第一金屬電極；和連接到前述n型半導體層所形成的第二金屬電極，前述ITO層的膜厚為130nm以上、170nm以下，前述ITON層與前述ITO層的總膜厚為240nm以上、310nm以下。
  2. 如申請專利範圍第1項所記載的半導體發光元件，其中，前述p型GaN層與前述ITON層的肖特基障壁高度為2.0eV以上、3.2eV以下。
  3. 如申請專利範圍第1項所記載的半導體發光元件，其中，前述ITON層的折射率為2.11以上、2.34以下。
  4. 如申請專利範圍第1項所記載的半導體發光元件，其中，前述ITON層內的氮濃度，是從與前述p型GaN層的界面，向著與前述ITO層的界面下降。
  5. 如申請專利範圍第1項所記載的半導體發光元件，其中，前述基板為藍寶石基板。
  6. 如申請專利範圍第1項所記載的半導體發光元件，其中，前述n型半導體層具有n型GaN層。
  7. 如申請專利範圍第1項所記載的半導體發光元件 ，其中，前述活性層，是InAlGaN的障壁層、和InGaN的量子井層的層積構造。
  8. 一種半導體發光元件，其特徵為具有：n型半導體層；形成在前述n型半導體層上的活性層；形成在前述活性層上，且最上部為p型GaN層的p型半導體層；形成在前述p型GaN層上的ITON(氧氮化銦錫)層；形成在前述ITON層上的ITO(氧化銦錫)層；形成在前述ITO層上的一部分的第一金屬電極；和連接到前述n型半導體層所形成的第二金屬電極，前述ITO層的膜厚為130nm以上、170nm以下，前述ITON層與前述ITO層的總膜厚為240nm以上、310nm以下。
  9. 如申請專利範圍第8項所記載的半導體發光元件，其中，前述p型GaN層與前述ITON層的肖特基障壁高度為2.0eV以上、3.2eV以下。
  10. 如申請專利範圍第8項所記載的半導體發光元件，其中，前述ITON層的折射率為2.11以上、2.34以下。
  11. 如申請專利範圍第8項所記載的半導體發光元件，其中，前述ITON層內的氮濃度，是從與前述p型GaN層的界面，向著與前述ITO層的界面下降。
  12. 如申請專利範圍第8項所記載的半導體發光元件，其中，前述基板為藍寶石基板。
  13. 如申請專利範圍第8項所記載的半導體發光元件，其中，前述n型半導體層具有n型GaN層。
  14. 如申請專利範圍第8項所記載的半導體發光元件 ，其中，前述活性層，是InAlGaN的障壁層、和InGaN的量子井層的層積構造。
TW099129501A 2010-03-08 2010-09-01 半導體發光元件 TWI456795B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010050673A JP4881451B2 (ja) 2010-03-08 2010-03-08 半導体発光素子

Publications (2)

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TW201131813A TW201131813A (en) 2011-09-16
TWI456795B true TWI456795B (zh) 2014-10-11

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US (1) US8455911B2 (zh)
JP (1) JP4881451B2 (zh)
KR (2) KR101195663B1 (zh)
CN (1) CN102194955B (zh)
TW (1) TWI456795B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5417307B2 (ja) * 2010-12-02 2014-02-12 株式会社東芝 半導体発光素子
JP2012044231A (ja) * 2011-11-30 2012-03-01 Toshiba Corp 半導体発光素子
JP2014011333A (ja) * 2012-06-29 2014-01-20 Daiichi Jitsugyo Kk 光半導体素子およびその製造方法
JP2014053458A (ja) * 2012-09-07 2014-03-20 Sharp Corp 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
CN103280501A (zh) * 2013-05-22 2013-09-04 上海蓝光科技有限公司 Led芯片及其制造方法
JP2016062924A (ja) * 2014-09-12 2016-04-25 株式会社東芝 半導体発光素子
KR102656859B1 (ko) * 2016-10-21 2024-04-12 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 및 이를 포함하는 반도체 소자 패키지
CN108574027B (zh) * 2018-05-07 2020-02-07 福建兆元光电有限公司 氮化镓基led芯片及制造方法

Citations (1)

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Publication number Priority date Publication date Assignee Title
US20080303055A1 (en) * 2005-12-27 2008-12-11 Seong Tae-Yeon Group-III Nitride-Based Light Emitting Device

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Publication number Priority date Publication date Assignee Title
JP2001007379A (ja) 1999-06-24 2001-01-12 Sharp Corp 窒化ガリウム系化合物半導体受光素子
KR100590532B1 (ko) 2003-12-22 2006-06-15 삼성전자주식회사 플립칩형 질화물계 발광소자 및 그 제조방법
JP2004172649A (ja) 2004-03-23 2004-06-17 Sumitomo Chem Co Ltd ３−５族化合物半導体発光素子の輝度向上方法
KR100794304B1 (ko) 2005-12-16 2008-01-11 삼성전자주식회사 광학 소자 및 그 제조 방법
JP5385614B2 (ja) 2005-12-16 2014-01-08 三星ディスプレイ株式會社 光学素子およびその製造方法
KR100794306B1 (ko) 2005-12-27 2008-01-11 삼성전자주식회사 발광 소자 및 그 제조 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080303055A1 (en) * 2005-12-27 2008-12-11 Seong Tae-Yeon Group-III Nitride-Based Light Emitting Device

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Publication number Publication date
US20110215291A1 (en) 2011-09-08
JP4881451B2 (ja) 2012-02-22
JP2011187639A (ja) 2011-09-22
US8455911B2 (en) 2013-06-04
CN102194955A (zh) 2011-09-21
CN102194955B (zh) 2014-01-08
TW201131813A (en) 2011-09-16
KR20120114200A (ko) 2012-10-16
KR101195663B1 (ko) 2012-10-30
KR20110102116A (ko) 2011-09-16

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