JP2011253987A5 - - Google Patents

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Publication number
JP2011253987A5
JP2011253987A5 JP2010127802A JP2010127802A JP2011253987A5 JP 2011253987 A5 JP2011253987 A5 JP 2011253987A5 JP 2010127802 A JP2010127802 A JP 2010127802A JP 2010127802 A JP2010127802 A JP 2010127802A JP 2011253987 A5 JP2011253987 A5 JP 2011253987A5
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JP
Japan
Prior art keywords
type inp
inp substrate
back surface
reflected
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010127802A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011253987A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010127802A priority Critical patent/JP2011253987A/ja
Priority claimed from JP2010127802A external-priority patent/JP2011253987A/ja
Priority to US13/017,072 priority patent/US8330243B2/en
Priority to TW100103612A priority patent/TW201145502A/zh
Priority to DE102011076887A priority patent/DE102011076887A1/de
Priority to KR1020110052557A priority patent/KR101296192B1/ko
Priority to CN2011101473865A priority patent/CN102270666A/zh
Publication of JP2011253987A publication Critical patent/JP2011253987A/ja
Publication of JP2011253987A5 publication Critical patent/JP2011253987A5/ja
Pending legal-status Critical Current

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JP2010127802A 2010-06-03 2010-06-03 半導体受光素子及び光モジュール Pending JP2011253987A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010127802A JP2011253987A (ja) 2010-06-03 2010-06-03 半導体受光素子及び光モジュール
US13/017,072 US8330243B2 (en) 2010-06-03 2011-01-31 Semiconductor light-receiving element and optical module
TW100103612A TW201145502A (en) 2010-06-03 2011-01-31 Semiconductor light-receiving element and optical module
DE102011076887A DE102011076887A1 (de) 2010-06-03 2011-06-01 Licht empfangendes Halbleiterelement und optisches Modul
KR1020110052557A KR101296192B1 (ko) 2010-06-03 2011-06-01 반도체 수광소자 및 광 모듈
CN2011101473865A CN102270666A (zh) 2010-06-03 2011-06-02 半导体受光元件以及光模块

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010127802A JP2011253987A (ja) 2010-06-03 2010-06-03 半導体受光素子及び光モジュール

Publications (2)

Publication Number Publication Date
JP2011253987A JP2011253987A (ja) 2011-12-15
JP2011253987A5 true JP2011253987A5 (enExample) 2013-05-30

Family

ID=44974027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010127802A Pending JP2011253987A (ja) 2010-06-03 2010-06-03 半導体受光素子及び光モジュール

Country Status (6)

Country Link
US (1) US8330243B2 (enExample)
JP (1) JP2011253987A (enExample)
KR (1) KR101296192B1 (enExample)
CN (1) CN102270666A (enExample)
DE (1) DE102011076887A1 (enExample)
TW (1) TW201145502A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015176904A (ja) * 2014-03-13 2015-10-05 三菱電機株式会社 半導体受光素子
JP6518076B2 (ja) * 2015-02-16 2019-05-22 エイブリック株式会社 受光素子を有する光検出半導体装置
JP2018066888A (ja) * 2016-10-20 2018-04-26 住友電気工業株式会社 光モジュール
US10365448B2 (en) 2017-12-15 2019-07-30 Sumitomo Electric Industries, Ltd. Optical module having two lens system and monitor photodiode between two lenses
DE102020117238B4 (de) * 2020-06-30 2025-03-27 First Sensor AG Anordnung für ein optoelektronisches Bauelement, Verfahren zum Herstellen und optoelektronisches Bauelement
JP7674083B2 (ja) * 2020-08-26 2025-05-09 浜松ホトニクス株式会社 光検出装置
WO2022074780A1 (ja) * 2020-10-08 2022-04-14 日本電信電話株式会社 半導体受光素子

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Publication number Priority date Publication date Assignee Title
JP2847561B2 (ja) 1990-04-16 1999-01-20 富士通株式会社 半導体受光素子
EP0452801B1 (en) 1990-04-16 1996-11-27 Fujitsu Limited Semiconductor device having light receiving element and method of producing the same
JP2945438B2 (ja) * 1990-04-23 1999-09-06 株式会社日立製作所 光半導体装置及びそれを用いた受光器
US5345074A (en) * 1990-11-13 1994-09-06 Sumitomo Electric Industries, Ltd. Semiconductor light source
JP2765321B2 (ja) * 1991-11-29 1998-06-11 日本電気株式会社 半導体受光素子
JPH0653538A (ja) * 1992-07-28 1994-02-25 Toshiba Corp 半導体受光素子
JP3115148B2 (ja) 1993-03-31 2000-12-04 株式会社東芝 半導体装置の製造方法
JPH1117211A (ja) 1997-06-26 1999-01-22 Hitachi Ltd 半導体面型受光素子及び装置
JP3419312B2 (ja) * 1998-07-21 2003-06-23 住友電気工業株式会社 受光素子及び受光素子モジュール
US6043550A (en) 1997-09-03 2000-03-28 Sumitomo Electric Industries, Ltd. Photodiode and photodiode module
JP3221402B2 (ja) 1998-06-22 2001-10-22 住友電気工業株式会社 受光素子と受光装置
JP3931545B2 (ja) * 2000-03-22 2007-06-20 住友電気工業株式会社 発光モジュール
JPWO2002063730A1 (ja) * 2001-02-05 2004-06-10 住友電気工業株式会社 光送信器
JP2002289904A (ja) * 2001-03-23 2002-10-04 Sumitomo Electric Ind Ltd 半導体受光素子とその製造方法
US6888857B2 (en) * 2001-09-21 2005-05-03 Sumitomo Electric Industries, Ltd. Optical module
EP1396913A1 (en) * 2002-09-03 2004-03-10 Agilent Technologies, Inc. - a Delaware corporation - Single mode distributed feedback lasers
JP2005072130A (ja) 2003-08-21 2005-03-17 Mitsubishi Electric Corp 半導体レーザ装置
US20070104242A1 (en) * 2003-11-28 2007-05-10 Nec Corporation Distributed-feedback semiconductor laser, distributed-feedback semiconductor laser array, and optical module
JP2006147991A (ja) 2004-11-24 2006-06-08 Canon Inc 固体撮像素子及びそれを有する光学機器
JP2007013015A (ja) * 2005-07-04 2007-01-18 Sumitomo Electric Ind Ltd 半導体受光素子
JP2008010710A (ja) * 2006-06-30 2008-01-17 Oki Electric Ind Co Ltd 半導体レーザ装置
JP2008047580A (ja) * 2006-08-11 2008-02-28 Sumitomo Electric Ind Ltd 半導体受光素子
US7670638B2 (en) 2007-05-17 2010-03-02 Sunpower Corporation Protection layer for fabricating a solar cell
KR101444709B1 (ko) 2007-11-16 2014-09-30 주성엔지니어링(주) 기판형 태양전지 및 그 제조방법
JP5303962B2 (ja) * 2008-02-28 2013-10-02 三菱電機株式会社 半導体受光素子
US8476681B2 (en) * 2009-09-17 2013-07-02 Sionyx, Inc. Photosensitive imaging devices and associated methods

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