KR101296192B1 - 반도체 수광소자 및 광 모듈 - Google Patents

반도체 수광소자 및 광 모듈 Download PDF

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Publication number
KR101296192B1
KR101296192B1 KR1020110052557A KR20110052557A KR101296192B1 KR 101296192 B1 KR101296192 B1 KR 101296192B1 KR 1020110052557 A KR1020110052557 A KR 1020110052557A KR 20110052557 A KR20110052557 A KR 20110052557A KR 101296192 B1 KR101296192 B1 KR 101296192B1
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KR
South Korea
Prior art keywords
semiconductor
main surface
receiving element
type
semiconductor light
Prior art date
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Expired - Fee Related
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KR1020110052557A
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English (en)
Korean (ko)
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KR20110132990A (ko
Inventor
마토부 키쿠치
Original Assignee
미쓰비시덴키 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
KR1020110052557A 2010-06-03 2011-06-01 반도체 수광소자 및 광 모듈 Expired - Fee Related KR101296192B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010127802A JP2011253987A (ja) 2010-06-03 2010-06-03 半導体受光素子及び光モジュール
JPJP-P-2010-127802 2010-06-03

Publications (2)

Publication Number Publication Date
KR20110132990A KR20110132990A (ko) 2011-12-09
KR101296192B1 true KR101296192B1 (ko) 2013-08-13

Family

ID=44974027

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110052557A Expired - Fee Related KR101296192B1 (ko) 2010-06-03 2011-06-01 반도체 수광소자 및 광 모듈

Country Status (6)

Country Link
US (1) US8330243B2 (enExample)
JP (1) JP2011253987A (enExample)
KR (1) KR101296192B1 (enExample)
CN (1) CN102270666A (enExample)
DE (1) DE102011076887A1 (enExample)
TW (1) TW201145502A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015176904A (ja) * 2014-03-13 2015-10-05 三菱電機株式会社 半導体受光素子
JP6518076B2 (ja) * 2015-02-16 2019-05-22 エイブリック株式会社 受光素子を有する光検出半導体装置
JP2018066888A (ja) * 2016-10-20 2018-04-26 住友電気工業株式会社 光モジュール
US10365448B2 (en) 2017-12-15 2019-07-30 Sumitomo Electric Industries, Ltd. Optical module having two lens system and monitor photodiode between two lenses
DE102020117238B4 (de) * 2020-06-30 2025-03-27 First Sensor AG Anordnung für ein optoelektronisches Bauelement, Verfahren zum Herstellen und optoelektronisches Bauelement
JP7674083B2 (ja) * 2020-08-26 2025-05-09 浜松ホトニクス株式会社 光検出装置
WO2022074780A1 (ja) * 2020-10-08 2022-04-14 日本電信電話株式会社 半導体受光素子

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012889A (ja) * 1998-06-22 2000-01-14 Sumitomo Electric Ind Ltd 受光素子と受光装置
JP2005072130A (ja) 2003-08-21 2005-03-17 Mitsubishi Electric Corp 半導体レーザ装置
KR20090050756A (ko) * 2007-11-16 2009-05-20 주성엔지니어링(주) 기판형 태양전지 및 그 제조방법
US20100129955A1 (en) 2007-05-17 2010-05-27 Hsin-Chiao Luan Protection layer for fabricating a solar cell

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2847561B2 (ja) 1990-04-16 1999-01-20 富士通株式会社 半導体受光素子
EP0452801B1 (en) 1990-04-16 1996-11-27 Fujitsu Limited Semiconductor device having light receiving element and method of producing the same
JP2945438B2 (ja) * 1990-04-23 1999-09-06 株式会社日立製作所 光半導体装置及びそれを用いた受光器
US5345074A (en) * 1990-11-13 1994-09-06 Sumitomo Electric Industries, Ltd. Semiconductor light source
JP2765321B2 (ja) * 1991-11-29 1998-06-11 日本電気株式会社 半導体受光素子
JPH0653538A (ja) * 1992-07-28 1994-02-25 Toshiba Corp 半導体受光素子
JP3115148B2 (ja) 1993-03-31 2000-12-04 株式会社東芝 半導体装置の製造方法
JPH1117211A (ja) 1997-06-26 1999-01-22 Hitachi Ltd 半導体面型受光素子及び装置
JP3419312B2 (ja) * 1998-07-21 2003-06-23 住友電気工業株式会社 受光素子及び受光素子モジュール
US6043550A (en) 1997-09-03 2000-03-28 Sumitomo Electric Industries, Ltd. Photodiode and photodiode module
JP3931545B2 (ja) * 2000-03-22 2007-06-20 住友電気工業株式会社 発光モジュール
JPWO2002063730A1 (ja) * 2001-02-05 2004-06-10 住友電気工業株式会社 光送信器
JP2002289904A (ja) * 2001-03-23 2002-10-04 Sumitomo Electric Ind Ltd 半導体受光素子とその製造方法
US6888857B2 (en) * 2001-09-21 2005-05-03 Sumitomo Electric Industries, Ltd. Optical module
EP1396913A1 (en) * 2002-09-03 2004-03-10 Agilent Technologies, Inc. - a Delaware corporation - Single mode distributed feedback lasers
WO2005053124A1 (ja) * 2003-11-28 2005-06-09 Nec Corporation 分布帰還型半導体レーザ、分布帰還型半導体レーザアレイ及び光モジュール
JP2006147991A (ja) 2004-11-24 2006-06-08 Canon Inc 固体撮像素子及びそれを有する光学機器
JP2007013015A (ja) * 2005-07-04 2007-01-18 Sumitomo Electric Ind Ltd 半導体受光素子
JP2008010710A (ja) * 2006-06-30 2008-01-17 Oki Electric Ind Co Ltd 半導体レーザ装置
JP2008047580A (ja) * 2006-08-11 2008-02-28 Sumitomo Electric Ind Ltd 半導体受光素子
JP5303962B2 (ja) * 2008-02-28 2013-10-02 三菱電機株式会社 半導体受光素子
US8476681B2 (en) * 2009-09-17 2013-07-02 Sionyx, Inc. Photosensitive imaging devices and associated methods

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012889A (ja) * 1998-06-22 2000-01-14 Sumitomo Electric Ind Ltd 受光素子と受光装置
JP2005072130A (ja) 2003-08-21 2005-03-17 Mitsubishi Electric Corp 半導体レーザ装置
US20100129955A1 (en) 2007-05-17 2010-05-27 Hsin-Chiao Luan Protection layer for fabricating a solar cell
KR20090050756A (ko) * 2007-11-16 2009-05-20 주성엔지니어링(주) 기판형 태양전지 및 그 제조방법

Also Published As

Publication number Publication date
TW201145502A (en) 2011-12-16
US20110297967A1 (en) 2011-12-08
JP2011253987A (ja) 2011-12-15
KR20110132990A (ko) 2011-12-09
CN102270666A (zh) 2011-12-07
DE102011076887A1 (de) 2011-12-08
US8330243B2 (en) 2012-12-11

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