JP5394717B2 - 窒化物半導体光素子の製造方法 - Google Patents
窒化物半導体光素子の製造方法 Download PDFInfo
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- JP5394717B2 JP5394717B2 JP2008318274A JP2008318274A JP5394717B2 JP 5394717 B2 JP5394717 B2 JP 5394717B2 JP 2008318274 A JP2008318274 A JP 2008318274A JP 2008318274 A JP2008318274 A JP 2008318274A JP 5394717 B2 JP5394717 B2 JP 5394717B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3215—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities graded composition cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
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- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Description
本発明の第1の実施例について、断面図(図11)およびバンド構造図(図12)を用いて説明する。有機金属気相成長法により、(0001)n型GaN基板1上にSiドープn型GaNバッファ層2(膜厚1000nm、Si濃度:1x1018cm−3)、Siドープn型AlGaNクラッド層3(Al組成比:0.04、膜厚:2500nm、Si濃度:1x1018cm−3)、Siドープn型GaNガイド層4(膜厚:100nm、Si濃度:5x1017cm−3))、アンドープInGaNガイド層5(In組成比:0.01、膜厚:60nm)、アンドープInGaN多重量子井戸活性層6(周期数:3、アンドープInGaN井戸層8のIn組成比:0.20、膜厚:3.0nm、GaN層9/アンドープInGaN障壁層7のIn組成比:0.02、膜厚:4nm/10nm)を形成した。図12は、この時のアンドープInGaN多重量子井戸活性層6の詳細をバンド構造図で示したものである。
図13は、本発明の第2の実施例であり、本発明をアンドープInGaNガイド層5に適用した時の活性層近傍のバンド構造図である。
図14は、本発明の第3の実施例であり、本発明をアンドープInGaNガイド層5とアンドープInGaN障壁層7との間に適用した時の活性層近傍のバンド構造図である。
図15は、本発明の第4の実施例であり、活性層内側の障壁層をGaN層に変えた時のバンド構造図である。
図16は、本発明の第5の実施例であり、前記実施例4に対し、中央部の障壁層をAlGaN/GaN構造とした時のバンド構造図である。
図17は、本発明の第6の実施例であり、水素添加によるIn偏析層低減の効果をアンドープInGaN井戸層8へ適用した時のバンド構造図である。
2 Siドープn型GaNバッファ層
3 Siドープn型AlGaNクラッド層
4 Siドープn型GaNガイド層
5 アンドープInGaNガイド層
6 アンドープInGaN多重量子井戸活性層
7 アンドープInGaN障壁層
8 アンドープInGaN井戸層
9 GaN層
10 InGaN障壁層
11 アンドープInGaNガイド層
12 Mgドープp型AlGaN電子ストッパー層
13 Mgドープp型AlGaNクラッド層
14 Mgドープp型GaNコンタクト層
15 メサストライプ
16 p型電極
17 n型電極
18 InGaNガイド層
19 GaN層
20 InGaNガイド層
21 InGaNガイド層
22、23 GaN層
24 AlGaN障壁層
25 GaN障壁層
26 アンドープInGaN井戸層
27 GaN井戸層
Claims (6)
- 半導体基板上に第1導電型クラッド層、ガイド層、InGaN系量子井戸活性層、第2導電型クラッド層および第2導電型コンタクト層を順次成長させる工程を有する窒化物半導体光素子の製造方法であって、
前記InGaN系量子井戸活性層を成長させる工程は、InGaN井戸層を成長させる工程と、InGaN障壁層を成長させる工程とを含み、
前記InGaN障壁層を成長させる工程は、
前記InGaN井戸層の上部に窒素およびアンモニアからなるガス雰囲気に水素を添加してGaN層膜を成長させる第1工程と、前記第1工程の後、窒素およびアンモニアからなるガス雰囲気でInを必ず含むInGaN層膜を成長させる第2工程とを含み、
前記第1工程の水素濃度は、前記第2工程の水素濃度よりも高いことを特徴とする窒化物半導体光素子の製造方法。 - 前記第1工程における前記水素の添加濃度は、前記ガス雰囲気の1%〜10%であることを特徴とする請求項1記載の窒化物半導体光素子の製造方法。
- 前記第1工程で成長させる前記GaN層膜の厚さは、1nm〜5nmであることを特徴とする請求項1記載の窒化物半導体光素子の製造方法。
- 前記第2工程で成長させる前記InGaN層膜の厚さは、4nm以上であることを特徴とする請求項1記載の窒化物半導体光素子の製造方法。
- 前記InGaN系量子井戸活性層を有機金属気相成長法で成長させることを特徴とする請求項1記載の窒化物半導体光素子の製造方法。
- 前記InGaN井戸層を成長させる工程は、
窒素およびアンモニアからなるガス雰囲気にパルス状に水素を添加して膜を成長させる第3工程と、窒素およびアンモニアからなるガス雰囲気で膜を成長させる第4工程とをさらに含むことを特徴とする請求項1記載の窒化物半導体光素子の製造方法。
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JP2008318274A JP5394717B2 (ja) | 2008-12-15 | 2008-12-15 | 窒化物半導体光素子の製造方法 |
US12/630,008 US8124432B2 (en) | 2008-12-15 | 2009-12-03 | Nitride semiconductor optical element and manufacturing method thereof |
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JP2010141242A JP2010141242A (ja) | 2010-06-24 |
JP2010141242A5 JP2010141242A5 (ja) | 2011-12-01 |
JP5394717B2 true JP5394717B2 (ja) | 2014-01-22 |
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JP (1) | JP5394717B2 (ja) |
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JP2010141242A (ja) | 2010-06-24 |
US20100150194A1 (en) | 2010-06-17 |
US8124432B2 (en) | 2012-02-28 |
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